KR20110086833A - 반도체 소자 제조 방법, 반도체 소자 및 반도체 소자 제조 설비 - Google Patents

반도체 소자 제조 방법, 반도체 소자 및 반도체 소자 제조 설비 Download PDF

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Publication number
KR20110086833A
KR20110086833A KR1020117011733A KR20117011733A KR20110086833A KR 20110086833 A KR20110086833 A KR 20110086833A KR 1020117011733 A KR1020117011733 A KR 1020117011733A KR 20117011733 A KR20117011733 A KR 20117011733A KR 20110086833 A KR20110086833 A KR 20110086833A
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KR
South Korea
Prior art keywords
semiconductor
semiconductor device
layer
substrate
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020117011733A
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English (en)
Korean (ko)
Inventor
라펠 퍼레 아이 토마스
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication date
Priority claimed from EP08167461A external-priority patent/EP2180531A1/en
Priority claimed from US12/257,233 external-priority patent/US8124502B2/en
Application filed by 어플라이드 머티어리얼스, 인코포레이티드 filed Critical 어플라이드 머티어리얼스, 인코포레이티드
Publication of KR20110086833A publication Critical patent/KR20110086833A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251—Diffusion into or out of group IV semiconductors
    • H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
KR1020117011733A 2008-10-23 2009-10-13 반도체 소자 제조 방법, 반도체 소자 및 반도체 소자 제조 설비 Ceased KR20110086833A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US12/257,233 2008-10-23
EP08167461A EP2180531A1 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
EP08167461.6 2008-10-23
US12/257,233 US8124502B2 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation

Publications (1)

Publication Number Publication Date
KR20110086833A true KR20110086833A (ko) 2011-08-01

Family

ID=41809150

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020117011733A Ceased KR20110086833A (ko) 2008-10-23 2009-10-13 반도체 소자 제조 방법, 반도체 소자 및 반도체 소자 제조 설비

Country Status (5)

Country Link
JP (1) JP2012506629A (enrdf_load_stackoverflow)
KR (1) KR20110086833A (enrdf_load_stackoverflow)
CN (1) CN102197497A (enrdf_load_stackoverflow)
TW (1) TW201030854A (enrdf_load_stackoverflow)
WO (1) WO2010046284A1 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI126401B (fi) * 2011-09-30 2016-11-15 Aalto-Korkeakoulusäätiö Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin
JP2015519729A (ja) * 2012-04-02 2015-07-09 ヌソラ インコーポレイテッドｎｕｓｏｌａ Ｉｎｃ． 光電変換素子及びその製造方法
CN104425633B (zh) * 2013-08-30 2016-11-16 中国科学院宁波材料技术与工程研究所 一种介质钝化膜和太阳能电池及其制备方法
JP6072129B2 (ja) * 2014-04-30 2017-02-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ドーパント含有ポリマー膜を用いた基体のドーピング
CN107735866B (zh) * 2015-05-29 2021-05-14 松下知识产权经营株式会社 太阳能电池
JPWO2018003036A1 (ja) * 2016-06-29 2018-10-04 三菱電機株式会社 太陽電池の製造方法および太陽電池製造装置
JP2020113580A (ja) * 2019-01-08 2020-07-27 株式会社ディスコ ゲッタリング層形成方法
CN110707160B (zh) * 2019-10-11 2021-07-16 湖南红太阳光电科技有限公司 一种管式直接PECVD制备太阳电池SiC减反射膜的方法
CN113782638B (zh) * 2021-09-09 2024-10-22 正泰新能科技股份有限公司 一种电池背钝化结构及其制作方法、太阳能电池
CN114551606B (zh) 2021-09-16 2024-10-15 晶科能源股份有限公司 一种太阳能电池、光伏组件
CN114335249A (zh) * 2021-12-31 2022-04-12 东方日升新能源股份有限公司 N-TOPCon电池及其制作工艺

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467778A (en) * 1977-11-10 1979-05-31 Toshiba Corp Production of semiconductor device
JPS59205758A (ja) * 1983-05-09 1984-11-21 Sanyo Electric Co Ltd トランジスタの製造方法
JPS63136568A (ja) * 1986-11-27 1988-06-08 Fujitsu Ltd 半導体装置
JPH01304737A (ja) * 1988-06-01 1989-12-08 Sony Corp Ｐｎｐバイポーラトランジスタの製造方法
JPH05218400A (ja) * 1992-01-31 1993-08-27 Toyo Electric Mfg Co Ltd 半導体素子
JP3557158B2 (ja) * 2000-07-27 2004-08-25 三洋電機株式会社 高耐圧半導体装置の製造方法
US20070137692A1 (en) * 2005-12-16 2007-06-21 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells
DE102006041424A1 (de) * 2006-09-04 2008-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung
CN100536177C (zh) * 2008-01-29 2009-09-02 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法

Also Published As

Publication number Publication date
WO2010046284A1 (en) 2010-04-29
JP2012506629A (ja) 2012-03-15
CN102197497A (zh) 2011-09-21
TW201030854A (en) 2010-08-16

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