TW201030854A - Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation - Google Patents

Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation Download PDF

Info

Publication number
TW201030854A
TW201030854A TW098135821A TW98135821A TW201030854A TW 201030854 A TW201030854 A TW 201030854A TW 098135821 A TW098135821 A TW 098135821A TW 98135821 A TW98135821 A TW 98135821A TW 201030854 A TW201030854 A TW 201030854A
Authority
TW
Taiwan
Prior art keywords
semiconductor
layer
substrate
compound
semiconductor substrate
Prior art date
Application number
TW098135821A
Other languages
English (en)
Chinese (zh)
Inventor
I Tomas Rafel Ferre
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP08167461A external-priority patent/EP2180531A1/en
Priority claimed from US12/257,233 external-priority patent/US8124502B2/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW201030854A publication Critical patent/TW201030854A/zh

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/225Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
    • H01L21/2251Diffusion into or out of group IV semiconductors
    • H01L21/2254Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/128Annealing
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
TW098135821A 2008-10-23 2009-10-22 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation TW201030854A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08167461A EP2180531A1 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
US12/257,233 US8124502B2 (en) 2008-10-23 2008-10-23 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation

Publications (1)

Publication Number Publication Date
TW201030854A true TW201030854A (en) 2010-08-16

Family

ID=41809150

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098135821A TW201030854A (en) 2008-10-23 2009-10-22 Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation

Country Status (5)

Country Link
JP (1) JP2012506629A (enrdf_load_stackoverflow)
KR (1) KR20110086833A (enrdf_load_stackoverflow)
CN (1) CN102197497A (enrdf_load_stackoverflow)
TW (1) TW201030854A (enrdf_load_stackoverflow)
WO (1) WO2010046284A1 (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI126401B (fi) * 2011-09-30 2016-11-15 Aalto-Korkeakoulusäätiö Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin
JP2015519729A (ja) * 2012-04-02 2015-07-09 ヌソラ インコーポレイテッドnusola Inc. 光電変換素子及びその製造方法
CN104425633B (zh) * 2013-08-30 2016-11-16 中国科学院宁波材料技术与工程研究所 一种介质钝化膜和太阳能电池及其制备方法
JP6072129B2 (ja) * 2014-04-30 2017-02-01 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア ドーパント含有ポリマー膜を用いた基体のドーピング
CN107735866B (zh) * 2015-05-29 2021-05-14 松下知识产权经营株式会社 太阳能电池
JPWO2018003036A1 (ja) * 2016-06-29 2018-10-04 三菱電機株式会社 太陽電池の製造方法および太陽電池製造装置
JP2020113580A (ja) * 2019-01-08 2020-07-27 株式会社ディスコ ゲッタリング層形成方法
CN110707160B (zh) * 2019-10-11 2021-07-16 湖南红太阳光电科技有限公司 一种管式直接PECVD制备太阳电池SiC减反射膜的方法
CN113782638B (zh) * 2021-09-09 2024-10-22 正泰新能科技股份有限公司 一种电池背钝化结构及其制作方法、太阳能电池
CN114551606B (zh) 2021-09-16 2024-10-15 晶科能源股份有限公司 一种太阳能电池、光伏组件
CN114335249A (zh) * 2021-12-31 2022-04-12 东方日升新能源股份有限公司 N-TOPCon电池及其制作工艺

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5467778A (en) * 1977-11-10 1979-05-31 Toshiba Corp Production of semiconductor device
JPS59205758A (ja) * 1983-05-09 1984-11-21 Sanyo Electric Co Ltd トランジスタの製造方法
JPS63136568A (ja) * 1986-11-27 1988-06-08 Fujitsu Ltd 半導体装置
JPH01304737A (ja) * 1988-06-01 1989-12-08 Sony Corp Pnpバイポーラトランジスタの製造方法
JPH05218400A (ja) * 1992-01-31 1993-08-27 Toyo Electric Mfg Co Ltd 半導体素子
JP3557158B2 (ja) * 2000-07-27 2004-08-25 三洋電機株式会社 高耐圧半導体装置の製造方法
US20070137692A1 (en) * 2005-12-16 2007-06-21 Bp Corporation North America Inc. Back-Contact Photovoltaic Cells
DE102006041424A1 (de) * 2006-09-04 2008-03-20 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung
CN100536177C (zh) * 2008-01-29 2009-09-02 江阴浚鑫科技有限公司 晶体硅太阳能电池的热处理方法

Also Published As

Publication number Publication date
WO2010046284A1 (en) 2010-04-29
JP2012506629A (ja) 2012-03-15
CN102197497A (zh) 2011-09-21
KR20110086833A (ko) 2011-08-01

Similar Documents

Publication Publication Date Title
TW201030854A (en) Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
US8124502B2 (en) Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
CN111769179B (zh) 制造太阳能电池的发射极区域的方法
US9018516B2 (en) Solar cell with silicon oxynitride dielectric layer
TW201007956A (en) Nitrided barrier layers for solar cells
Tao et al. 730 mV implied Voc enabled by tunnel oxide passivated contact with PECVD grown and crystallized n+ polycrystalline Si
WO2021128831A1 (zh) 太阳能电池及其制备方法、n型掺杂硅膜的处理方法以及半导体器件
Hong et al. Fully Bottom‐Up Waste‐Free Growth of Ultrathin Silicon Wafer via Self‐Releasing Seed Layer
US9911873B2 (en) Hydrogenation of passivated contacts
Slaoui et al. Passivation and etching of fine-grained polycrystalline silicon films by hydrogen treatment
WO2015130672A1 (en) Silicon solar cells with epitaxial emitters
WO2015130334A1 (en) Silicon solar cells with epitaxial emitters
JP2007227692A (ja) 光起電力装置
WO2025156827A1 (zh) 一种纵向传输截止横向传输导通的表面复合膜结构及其制备方法和应用
CN119836039A (zh) 一种异质结电池及其制备方法
JP5398772B2 (ja) 光起電力装置およびその製造方法、光起電力モジュール
CN117457777A (zh) 一种太阳能电池及其制备方法与应用
CN101809750A (zh) 渗滤非晶硅太阳能电池
US9559236B2 (en) Solar cell fabricated by simplified deposition process
TW201222639A (en) Method for producing a semiconductor device and a semiconductor device
CN117153950B (zh) 一种低温硼激活方法
EP2180531A1 (en) Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation
Kohlhase et al. Selective CVD of germanium on silicon and its applications
KR101554565B1 (ko) ZnO:Al:Ag 패시베이션 층의 제조방법 및 이에 따라 제조되는 ZnO:Al:Ag 패시베이션 층
HK40023494B (en) Solar cell and manufacturing method thereof, treatment method of n-type doped silicon film