TW201030854A - Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation - Google Patents
Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation Download PDFInfo
- Publication number
- TW201030854A TW201030854A TW098135821A TW98135821A TW201030854A TW 201030854 A TW201030854 A TW 201030854A TW 098135821 A TW098135821 A TW 098135821A TW 98135821 A TW98135821 A TW 98135821A TW 201030854 A TW201030854 A TW 201030854A
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor
- layer
- substrate
- compound
- semiconductor substrate
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08167461A EP2180531A1 (en) | 2008-10-23 | 2008-10-23 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
US12/257,233 US8124502B2 (en) | 2008-10-23 | 2008-10-23 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
Publications (1)
Publication Number | Publication Date |
---|---|
TW201030854A true TW201030854A (en) | 2010-08-16 |
Family
ID=41809150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW098135821A TW201030854A (en) | 2008-10-23 | 2009-10-22 | Semiconductor device manufacturing method, semiconductor device and semiconductor device manufacturing installation |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP2012506629A (enrdf_load_stackoverflow) |
KR (1) | KR20110086833A (enrdf_load_stackoverflow) |
CN (1) | CN102197497A (enrdf_load_stackoverflow) |
TW (1) | TW201030854A (enrdf_load_stackoverflow) |
WO (1) | WO2010046284A1 (enrdf_load_stackoverflow) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FI126401B (fi) * | 2011-09-30 | 2016-11-15 | Aalto-Korkeakoulusäätiö | Menetelmä valon indusoiman degradaation vähentämiseksi piisubstraatissa sekä piisubstraattirakenne ja laite, jotka käsittävät piisubstraatin |
JP2015519729A (ja) * | 2012-04-02 | 2015-07-09 | ヌソラ インコーポレイテッドnusola Inc. | 光電変換素子及びその製造方法 |
CN104425633B (zh) * | 2013-08-30 | 2016-11-16 | 中国科学院宁波材料技术与工程研究所 | 一种介质钝化膜和太阳能电池及其制备方法 |
JP6072129B2 (ja) * | 2014-04-30 | 2017-02-01 | ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア | ドーパント含有ポリマー膜を用いた基体のドーピング |
CN107735866B (zh) * | 2015-05-29 | 2021-05-14 | 松下知识产权经营株式会社 | 太阳能电池 |
JPWO2018003036A1 (ja) * | 2016-06-29 | 2018-10-04 | 三菱電機株式会社 | 太陽電池の製造方法および太陽電池製造装置 |
JP2020113580A (ja) * | 2019-01-08 | 2020-07-27 | 株式会社ディスコ | ゲッタリング層形成方法 |
CN110707160B (zh) * | 2019-10-11 | 2021-07-16 | 湖南红太阳光电科技有限公司 | 一种管式直接PECVD制备太阳电池SiC减反射膜的方法 |
CN113782638B (zh) * | 2021-09-09 | 2024-10-22 | 正泰新能科技股份有限公司 | 一种电池背钝化结构及其制作方法、太阳能电池 |
CN114551606B (zh) | 2021-09-16 | 2024-10-15 | 晶科能源股份有限公司 | 一种太阳能电池、光伏组件 |
CN114335249A (zh) * | 2021-12-31 | 2022-04-12 | 东方日升新能源股份有限公司 | N-TOPCon电池及其制作工艺 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5467778A (en) * | 1977-11-10 | 1979-05-31 | Toshiba Corp | Production of semiconductor device |
JPS59205758A (ja) * | 1983-05-09 | 1984-11-21 | Sanyo Electric Co Ltd | トランジスタの製造方法 |
JPS63136568A (ja) * | 1986-11-27 | 1988-06-08 | Fujitsu Ltd | 半導体装置 |
JPH01304737A (ja) * | 1988-06-01 | 1989-12-08 | Sony Corp | Pnpバイポーラトランジスタの製造方法 |
JPH05218400A (ja) * | 1992-01-31 | 1993-08-27 | Toyo Electric Mfg Co Ltd | 半導体素子 |
JP3557158B2 (ja) * | 2000-07-27 | 2004-08-25 | 三洋電機株式会社 | 高耐圧半導体装置の製造方法 |
US20070137692A1 (en) * | 2005-12-16 | 2007-06-21 | Bp Corporation North America Inc. | Back-Contact Photovoltaic Cells |
DE102006041424A1 (de) * | 2006-09-04 | 2008-03-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur simultanen Dotierung und Oxidation von Halbleitersubstraten und dessen Verwendung |
CN100536177C (zh) * | 2008-01-29 | 2009-09-02 | 江阴浚鑫科技有限公司 | 晶体硅太阳能电池的热处理方法 |
-
2009
- 2009-10-13 KR KR1020117011733A patent/KR20110086833A/ko not_active Ceased
- 2009-10-13 WO PCT/EP2009/063370 patent/WO2010046284A1/en active Application Filing
- 2009-10-13 JP JP2011532591A patent/JP2012506629A/ja not_active Ceased
- 2009-10-13 CN CN2009801422559A patent/CN102197497A/zh active Pending
- 2009-10-22 TW TW098135821A patent/TW201030854A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
WO2010046284A1 (en) | 2010-04-29 |
JP2012506629A (ja) | 2012-03-15 |
CN102197497A (zh) | 2011-09-21 |
KR20110086833A (ko) | 2011-08-01 |
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