JP5165572B2 - トリミング可能膜抵抗器および膜抵抗器を形成しトリミングする方法 - Google Patents

トリミング可能膜抵抗器および膜抵抗器を形成しトリミングする方法 Download PDF

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JP5165572B2
JP5165572B2 JP2008530743A JP2008530743A JP5165572B2 JP 5165572 B2 JP5165572 B2 JP 5165572B2 JP 2008530743 A JP2008530743 A JP 2008530743A JP 2008530743 A JP2008530743 A JP 2008530743A JP 5165572 B2 JP5165572 B2 JP 5165572B2
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Prior art keywords
trimming
trimmable
low impedance
impedance element
resistive film
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Japanese (ja)
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JP2009509327A (ja
JP2009509327A5 (https=
Inventor
パトリック・エム・マクギネス
ベルナード・ピー・ステンソン
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アナログ ディヴァイスィズ インク
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2008530743A 2005-09-20 2006-09-14 トリミング可能膜抵抗器および膜抵抗器を形成しトリミングする方法 Active JP5165572B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/231,054 US7598841B2 (en) 2005-09-20 2005-09-20 Film resistor and a method for forming and trimming a film resistor
US11/231,054 2005-09-20
PCT/IE2006/000100 WO2007034463A1 (en) 2005-09-20 2006-09-14 A trimmable film resistor and a method for forming and trimming a film resistor

Publications (3)

Publication Number Publication Date
JP2009509327A JP2009509327A (ja) 2009-03-05
JP2009509327A5 JP2009509327A5 (https=) 2009-11-05
JP5165572B2 true JP5165572B2 (ja) 2013-03-21

Family

ID=37420985

Family Applications (1)

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JP2008530743A Active JP5165572B2 (ja) 2005-09-20 2006-09-14 トリミング可能膜抵抗器および膜抵抗器を形成しトリミングする方法

Country Status (6)

Country Link
US (2) US7598841B2 (https=)
EP (1) EP1927117B1 (https=)
JP (1) JP5165572B2 (https=)
CN (1) CN101223611B (https=)
AT (1) ATE556416T1 (https=)
WO (1) WO2007034463A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5601566B2 (ja) * 2010-01-28 2014-10-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101141401B1 (ko) 2010-05-06 2012-05-03 삼성전기주식회사 병렬 구조의 저항기와 그 제조 방법
US8441335B2 (en) * 2010-10-21 2013-05-14 Analog Devices, Inc. Method of trimming a thin film resistor, and an integrated circuit including trimmable thin film resistors
JP2018037693A (ja) * 2012-02-03 2018-03-08 ローム株式会社 チップ抵抗器
US8723637B2 (en) 2012-04-10 2014-05-13 Analog Devices, Inc. Method for altering electrical and thermal properties of resistive materials
US9963777B2 (en) 2012-10-08 2018-05-08 Analog Devices, Inc. Methods of forming a thin film resistor
US9887687B2 (en) * 2015-01-28 2018-02-06 Analog Devices Global Method of trimming a component and a component trimmed by such a method
US11476045B2 (en) 2020-05-29 2022-10-18 Analog Devices International Unlimited Company Electric field grading protection design surrounding a galvanic or capacitive isolator
CN118969423B (zh) * 2024-10-17 2025-02-11 东莞市爱伦电子科技有限公司 一种树脂封装金属膜贴片电阻器

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2348589C2 (de) 1973-09-27 1982-04-01 Robert Bosch Gmbh, 7000 Stuttgart Oxidkeramischer Widerstand
GB1477007A (en) 1974-07-09 1977-06-22 Welwyn Electric Ltd Resistors
US4286249A (en) 1978-03-31 1981-08-25 Vishay Intertechnology, Inc. Attachment of leads to precision resistors
US4196411A (en) 1978-06-26 1980-04-01 Gentron Corporation Dual resistor element
US4298856A (en) 1979-09-04 1981-11-03 Western Electric Company, Incorporated Metallized resistor and methods of manufacturing and adjusting the resistance of same
US4862136A (en) 1983-04-13 1989-08-29 Birkner John M Programmable resistance network
JPS59161601U (ja) * 1983-04-14 1984-10-29 三洋電機株式会社 厚膜トリミング用抵抗体パタ−ン
US4505032A (en) 1983-06-27 1985-03-19 Analogic Corporation Method of making a voltage divider
US4682143A (en) 1985-10-30 1987-07-21 Advanced Micro Devices, Inc. Thin film chromium-silicon-carbon resistor
US4999731A (en) 1986-08-22 1991-03-12 Northern Telecom Limited Surge protector for telecommunications systems
US5015989A (en) 1989-07-28 1991-05-14 Pacific Hybrid Microelectronics, Inc. Film resistor with enhanced trimming characteristics
JPH0366103A (ja) * 1989-08-04 1991-03-20 Fujitsu Ltd 膜抵抗体の形成方法
JPH0497501A (ja) * 1990-08-14 1992-03-30 Matsushita Electric Ind Co Ltd 抵抗器及びその製造方法
FR2679662B1 (fr) 1991-07-26 1994-08-05 Schlumberger Services Petrol Circuit electrique tel qu'un pont de wheatstone pourvu d'une partie d'ajustage de resistance.
US5268651A (en) 1991-09-23 1993-12-07 Crystal Semiconductor Corporation Low drift resistor structure
JPH0684621A (ja) 1992-08-31 1994-03-25 Murata Mfg Co Ltd 抵抗体のトリミング方法
JP2545740B2 (ja) 1994-03-18 1996-10-23 工業技術院長 温度センサ
US5640137A (en) 1995-01-24 1997-06-17 Zilog, Inc. Polysilicon resistor cooling
US5929746A (en) 1995-10-13 1999-07-27 International Resistive Company, Inc. Surface mounted thin film voltage divider
DE19601135C1 (de) 1996-01-13 1997-05-28 Itt Ind Gmbh Deutsche Halbleiterstruktur
TW340944B (en) 1996-03-11 1998-09-21 Matsushita Electric Industrial Co Ltd Resistor and method of making the same
JPH1032110A (ja) 1996-07-16 1998-02-03 Matsushita Refrig Co Ltd 厚膜抵抗体のレーザトリミング方法
JPH1126204A (ja) * 1997-07-09 1999-01-29 Matsushita Electric Ind Co Ltd 抵抗器およびその製造方法
US6307495B1 (en) 1998-04-24 2001-10-23 Texas Instruments Incorporated Resistor elements in a resistor divider digital-to-analog converter
JP2000357601A (ja) * 1999-06-17 2000-12-26 Rohm Co Ltd チップ抵抗器、およびその製造方法
DE19949607A1 (de) 1999-10-15 2001-04-19 Bosch Gmbh Robert Planarer Abgleichwiderstand, Anwendungen und Verfahren zu seiner Herstellung
US6369740B1 (en) 1999-10-22 2002-04-09 Eric J. Swanson Programmable gain preamplifier coupled to an analog to digital converter
US6489881B1 (en) 1999-10-28 2002-12-03 International Rectifier Corporation High current sense resistor and process for its manufacture
US7057491B2 (en) 2002-09-23 2006-06-06 Analog Devices, Inc. Impedance network with minimum contact impedance

Also Published As

Publication number Publication date
CN101223611B (zh) 2011-04-06
EP1927117A1 (en) 2008-06-04
US7598841B2 (en) 2009-10-06
US7719403B2 (en) 2010-05-18
EP1927117B1 (en) 2012-05-02
US20090322466A1 (en) 2009-12-31
JP2009509327A (ja) 2009-03-05
US20070063813A1 (en) 2007-03-22
WO2007034463A1 (en) 2007-03-29
ATE556416T1 (de) 2012-05-15
CN101223611A (zh) 2008-07-16

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