ATE556416T1 - Abgleichbarer folienwiderstand und verfahren zum bilden und abgleichen eines folienwiderstands - Google Patents

Abgleichbarer folienwiderstand und verfahren zum bilden und abgleichen eines folienwiderstands

Info

Publication number
ATE556416T1
ATE556416T1 AT06780364T AT06780364T ATE556416T1 AT E556416 T1 ATE556416 T1 AT E556416T1 AT 06780364 T AT06780364 T AT 06780364T AT 06780364 T AT06780364 T AT 06780364T AT E556416 T1 ATE556416 T1 AT E556416T1
Authority
AT
Austria
Prior art keywords
film resistor
resistive film
intermediate portion
trimming
extending
Prior art date
Application number
AT06780364T
Other languages
German (de)
English (en)
Inventor
Patrick Mcguinness
Bernard Stenson
Original Assignee
Analog Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Analog Devices Inc filed Critical Analog Devices Inc
Application granted granted Critical
Publication of ATE556416T1 publication Critical patent/ATE556416T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/006—Thin film resistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/22—Apparatus or processes specially adapted for manufacturing resistors adapted for trimming
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/40—Resistors
    • H10D1/47—Resistors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/80—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors
    • H10D86/85—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple passive components, e.g. resistors, capacitors or inductors characterised by only passive components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/498—Resistive arrangements or effects of, or between, wiring layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
AT06780364T 2005-09-20 2006-09-14 Abgleichbarer folienwiderstand und verfahren zum bilden und abgleichen eines folienwiderstands ATE556416T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/231,054 US7598841B2 (en) 2005-09-20 2005-09-20 Film resistor and a method for forming and trimming a film resistor
PCT/IE2006/000100 WO2007034463A1 (en) 2005-09-20 2006-09-14 A trimmable film resistor and a method for forming and trimming a film resistor

Publications (1)

Publication Number Publication Date
ATE556416T1 true ATE556416T1 (de) 2012-05-15

Family

ID=37420985

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06780364T ATE556416T1 (de) 2005-09-20 2006-09-14 Abgleichbarer folienwiderstand und verfahren zum bilden und abgleichen eines folienwiderstands

Country Status (6)

Country Link
US (2) US7598841B2 (https=)
EP (1) EP1927117B1 (https=)
JP (1) JP5165572B2 (https=)
CN (1) CN101223611B (https=)
AT (1) ATE556416T1 (https=)
WO (1) WO2007034463A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5601566B2 (ja) * 2010-01-28 2014-10-08 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR101141401B1 (ko) 2010-05-06 2012-05-03 삼성전기주식회사 병렬 구조의 저항기와 그 제조 방법
US8441335B2 (en) * 2010-10-21 2013-05-14 Analog Devices, Inc. Method of trimming a thin film resistor, and an integrated circuit including trimmable thin film resistors
JP2018037693A (ja) * 2012-02-03 2018-03-08 ローム株式会社 チップ抵抗器
US8723637B2 (en) 2012-04-10 2014-05-13 Analog Devices, Inc. Method for altering electrical and thermal properties of resistive materials
US9963777B2 (en) 2012-10-08 2018-05-08 Analog Devices, Inc. Methods of forming a thin film resistor
US9887687B2 (en) * 2015-01-28 2018-02-06 Analog Devices Global Method of trimming a component and a component trimmed by such a method
US11476045B2 (en) 2020-05-29 2022-10-18 Analog Devices International Unlimited Company Electric field grading protection design surrounding a galvanic or capacitive isolator
CN118969423B (zh) * 2024-10-17 2025-02-11 东莞市爱伦电子科技有限公司 一种树脂封装金属膜贴片电阻器

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Publication number Priority date Publication date Assignee Title
DE2348589C2 (de) 1973-09-27 1982-04-01 Robert Bosch Gmbh, 7000 Stuttgart Oxidkeramischer Widerstand
GB1477007A (en) 1974-07-09 1977-06-22 Welwyn Electric Ltd Resistors
US4286249A (en) 1978-03-31 1981-08-25 Vishay Intertechnology, Inc. Attachment of leads to precision resistors
US4196411A (en) 1978-06-26 1980-04-01 Gentron Corporation Dual resistor element
US4298856A (en) 1979-09-04 1981-11-03 Western Electric Company, Incorporated Metallized resistor and methods of manufacturing and adjusting the resistance of same
US4862136A (en) 1983-04-13 1989-08-29 Birkner John M Programmable resistance network
JPS59161601U (ja) * 1983-04-14 1984-10-29 三洋電機株式会社 厚膜トリミング用抵抗体パタ−ン
US4505032A (en) 1983-06-27 1985-03-19 Analogic Corporation Method of making a voltage divider
US4682143A (en) 1985-10-30 1987-07-21 Advanced Micro Devices, Inc. Thin film chromium-silicon-carbon resistor
US4999731A (en) 1986-08-22 1991-03-12 Northern Telecom Limited Surge protector for telecommunications systems
US5015989A (en) 1989-07-28 1991-05-14 Pacific Hybrid Microelectronics, Inc. Film resistor with enhanced trimming characteristics
JPH0366103A (ja) * 1989-08-04 1991-03-20 Fujitsu Ltd 膜抵抗体の形成方法
JPH0497501A (ja) * 1990-08-14 1992-03-30 Matsushita Electric Ind Co Ltd 抵抗器及びその製造方法
FR2679662B1 (fr) 1991-07-26 1994-08-05 Schlumberger Services Petrol Circuit electrique tel qu'un pont de wheatstone pourvu d'une partie d'ajustage de resistance.
US5268651A (en) 1991-09-23 1993-12-07 Crystal Semiconductor Corporation Low drift resistor structure
JPH0684621A (ja) 1992-08-31 1994-03-25 Murata Mfg Co Ltd 抵抗体のトリミング方法
JP2545740B2 (ja) 1994-03-18 1996-10-23 工業技術院長 温度センサ
US5640137A (en) 1995-01-24 1997-06-17 Zilog, Inc. Polysilicon resistor cooling
US5929746A (en) 1995-10-13 1999-07-27 International Resistive Company, Inc. Surface mounted thin film voltage divider
DE19601135C1 (de) 1996-01-13 1997-05-28 Itt Ind Gmbh Deutsche Halbleiterstruktur
TW340944B (en) 1996-03-11 1998-09-21 Matsushita Electric Industrial Co Ltd Resistor and method of making the same
JPH1032110A (ja) 1996-07-16 1998-02-03 Matsushita Refrig Co Ltd 厚膜抵抗体のレーザトリミング方法
JPH1126204A (ja) * 1997-07-09 1999-01-29 Matsushita Electric Ind Co Ltd 抵抗器およびその製造方法
US6307495B1 (en) 1998-04-24 2001-10-23 Texas Instruments Incorporated Resistor elements in a resistor divider digital-to-analog converter
JP2000357601A (ja) * 1999-06-17 2000-12-26 Rohm Co Ltd チップ抵抗器、およびその製造方法
DE19949607A1 (de) 1999-10-15 2001-04-19 Bosch Gmbh Robert Planarer Abgleichwiderstand, Anwendungen und Verfahren zu seiner Herstellung
US6369740B1 (en) 1999-10-22 2002-04-09 Eric J. Swanson Programmable gain preamplifier coupled to an analog to digital converter
US6489881B1 (en) 1999-10-28 2002-12-03 International Rectifier Corporation High current sense resistor and process for its manufacture
US7057491B2 (en) 2002-09-23 2006-06-06 Analog Devices, Inc. Impedance network with minimum contact impedance

Also Published As

Publication number Publication date
CN101223611B (zh) 2011-04-06
EP1927117A1 (en) 2008-06-04
US7598841B2 (en) 2009-10-06
JP5165572B2 (ja) 2013-03-21
US7719403B2 (en) 2010-05-18
EP1927117B1 (en) 2012-05-02
US20090322466A1 (en) 2009-12-31
JP2009509327A (ja) 2009-03-05
US20070063813A1 (en) 2007-03-22
WO2007034463A1 (en) 2007-03-29
CN101223611A (zh) 2008-07-16

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