JP5159040B2 - 低温成長バッファ層の形成方法および発光素子の製造方法 - Google Patents

低温成長バッファ層の形成方法および発光素子の製造方法 Download PDF

Info

Publication number
JP5159040B2
JP5159040B2 JP2006016988A JP2006016988A JP5159040B2 JP 5159040 B2 JP5159040 B2 JP 5159040B2 JP 2006016988 A JP2006016988 A JP 2006016988A JP 2006016988 A JP2006016988 A JP 2006016988A JP 5159040 B2 JP5159040 B2 JP 5159040B2
Authority
JP
Japan
Prior art keywords
substrate
buffer layer
forming
setting
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006016988A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006310765A (ja
JP2006310765A5 (enExample
Inventor
泰久 牛田
大輔 篠田
大輔 山崎
宏治 平田
由平 池本
直樹 柴田
和夫 青木
ビヨラ エンカルナシオン アントニア ガルシア
清史 島村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koha Co Ltd
Original Assignee
Koha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koha Co Ltd filed Critical Koha Co Ltd
Priority to JP2006016988A priority Critical patent/JP5159040B2/ja
Priority to KR1020060028774A priority patent/KR100887470B1/ko
Priority to DE102006000150.8A priority patent/DE102006000150B4/de
Priority to US11/393,808 priority patent/US7524741B2/en
Priority to TW095111414A priority patent/TWI317178B/zh
Priority to CNB2006100670051A priority patent/CN100461475C/zh
Publication of JP2006310765A publication Critical patent/JP2006310765A/ja
Publication of JP2006310765A5 publication Critical patent/JP2006310765A5/ja
Application granted granted Critical
Publication of JP5159040B2 publication Critical patent/JP5159040B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K63/00—Receptacles for live fish, e.g. aquaria; Terraria
    • A01K63/06—Arrangements for heating or lighting in, or attached to, receptacles for live fish
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K63/00—Receptacles for live fish, e.g. aquaria; Terraria
    • A01K63/003—Aquaria; Terraria
    • A01K63/006—Accessories for aquaria or terraria
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental Sciences (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Marine Sciences & Fisheries (AREA)
  • Animal Husbandry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
JP2006016988A 2005-03-31 2006-01-25 低温成長バッファ層の形成方法および発光素子の製造方法 Expired - Fee Related JP5159040B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2006016988A JP5159040B2 (ja) 2005-03-31 2006-01-25 低温成長バッファ層の形成方法および発光素子の製造方法
DE102006000150.8A DE102006000150B4 (de) 2005-03-31 2006-03-30 Verfahren zur Ausbildung einer bei einer niedrigen Temperatur gewachsenen Pufferschicht
KR1020060028774A KR100887470B1 (ko) 2005-03-31 2006-03-30 저온 성장 버퍼층을 형성하는 방법, 발광 소자, 발광소자를 제조하는 방법 및 발광 장치
TW095111414A TWI317178B (en) 2005-03-31 2006-03-31 Method of forming a low temperature-grown buffer layer, light emitting element, method of making same, and light emitting device
US11/393,808 US7524741B2 (en) 2005-03-31 2006-03-31 Method of forming a low temperature-grown buffer layer, a light emitting element and method of making same, and light emitting device
CNB2006100670051A CN100461475C (zh) 2005-03-31 2006-03-31 形成低温生长缓冲层的方法、以及制造发光元件的方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005101603 2005-03-31
JP2005101603 2005-03-31
JP2006016988A JP5159040B2 (ja) 2005-03-31 2006-01-25 低温成長バッファ層の形成方法および発光素子の製造方法

Publications (3)

Publication Number Publication Date
JP2006310765A JP2006310765A (ja) 2006-11-09
JP2006310765A5 JP2006310765A5 (enExample) 2008-08-21
JP5159040B2 true JP5159040B2 (ja) 2013-03-06

Family

ID=37071111

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006016988A Expired - Fee Related JP5159040B2 (ja) 2005-03-31 2006-01-25 低温成長バッファ層の形成方法および発光素子の製造方法

Country Status (6)

Country Link
US (1) US7524741B2 (enExample)
JP (1) JP5159040B2 (enExample)
KR (1) KR100887470B1 (enExample)
CN (1) CN100461475C (enExample)
DE (1) DE102006000150B4 (enExample)
TW (1) TWI317178B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100102341A1 (en) * 2007-06-15 2010-04-29 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
CN100546058C (zh) * 2007-10-15 2009-09-30 佛山市国星光电股份有限公司 功率发光二极管封装结构
TWI431669B (zh) * 2007-11-21 2014-03-21 Mitsubishi Chem Corp Crystallization Growth of Nitride Semiconductor and Nitride Semiconductor
JP2009227545A (ja) * 2008-03-25 2009-10-08 Nippon Light Metal Co Ltd 光デバイス用基板及びその製造方法
KR101020958B1 (ko) * 2008-11-17 2011-03-09 엘지이노텍 주식회사 산화갈륨기판 제조방법, 발광소자 및 발광소자 제조방법
JP5529420B2 (ja) * 2009-02-09 2014-06-25 住友電気工業株式会社 エピタキシャルウエハ、窒化ガリウム系半導体デバイスを作製する方法、窒化ガリウム系半導体デバイス、及び酸化ガリウムウエハ
JP5378829B2 (ja) * 2009-02-19 2013-12-25 住友電気工業株式会社 エピタキシャルウエハを形成する方法、及び半導体素子を作製する方法
KR101047652B1 (ko) * 2009-12-18 2011-07-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100969127B1 (ko) * 2010-02-18 2010-07-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5706696B2 (ja) * 2011-01-06 2015-04-22 株式会社タムラ製作所 発光素子の製造方法及び発光素子
DE112012001613T5 (de) * 2011-04-08 2014-01-16 Koha Co., Ltd. Halbleiterlaminat und Prozess für seine Herstellung und Halbleiterelement
KR20140030180A (ko) * 2011-04-08 2014-03-11 가부시키가이샤 다무라 세이사쿠쇼 반도체 적층체 및 그 제조 방법과 반도체 소자
JP2013089616A (ja) * 2011-10-13 2013-05-13 Tamura Seisakusho Co Ltd 結晶積層構造体及びその製造方法
EP2768013A4 (en) 2011-10-13 2015-05-20 Tamura Seisakusho Kk CRYSTAL SHIELD STRUCTURE AND METHOD FOR THE PRODUCTION THEREOF AND SEMICONDUCTOR COMPONENT
JP5777479B2 (ja) * 2011-10-14 2015-09-09 株式会社タムラ製作所 β−Ｇａ２Ｏ３系基板の製造方法、及び結晶積層構造体の製造方法
CN103173738A (zh) * 2013-03-22 2013-06-26 新疆大学 一种Ga空位可调的GaN纳米结构的制备方法
JP5734362B2 (ja) * 2013-07-12 2015-06-17 株式会社タムラ製作所 半導体積層構造体及び半導体素子
CN105261683B (zh) * 2015-11-03 2017-10-10 湘能华磊光电股份有限公司 一种提高led外延晶体质量的外延生长方法
US10731274B2 (en) * 2016-06-24 2020-08-04 Stanley Electric Co., Ltd. Group III nitride laminate and vertical semiconductor device having the laminate
CN109378377B (zh) * 2018-10-17 2020-06-23 湘能华磊光电股份有限公司 Led外延生长方法
CN109378371B (zh) * 2018-10-17 2020-10-09 湘能华磊光电股份有限公司 Led外延片生长方法
CN113614292B (zh) * 2019-03-28 2024-08-23 日本碍子株式会社 半导体膜
UA124713C2 (uk) * 2019-10-03 2021-11-03 Юрій Юрійович Синиця Акваріум з підсвічуванням
JP7549322B2 (ja) * 2020-04-01 2024-09-11 株式会社ノベルクリスタルテクノロジー 半導体基板及びその製造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203388A (ja) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JPH088217B2 (ja) * 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
JP3147316B2 (ja) * 1991-08-05 2001-03-19 日本電信電話株式会社 半導体発光素子の作製方法
JPH07235692A (ja) * 1993-12-30 1995-09-05 Sony Corp 化合物半導体装置及びその形成方法
JP3274271B2 (ja) * 1994-03-09 2002-04-15 株式会社東芝 半導体発光素子
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
US6159834A (en) * 1998-02-12 2000-12-12 Motorola, Inc. Method of forming a gate quality oxide-compound semiconductor structure
US6078064A (en) * 1998-05-04 2000-06-20 Epistar Co. Indium gallium nitride light emitting diode
TW398084B (en) 1998-06-05 2000-07-11 Hewlett Packard Co Multilayered indium-containing nitride buffer layer for nitride epitaxy
US6423984B1 (en) * 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
DE19856245A1 (de) * 1998-12-07 2000-06-15 Deutsche Telekom Ag Verfahren zur Herstellung von mehrschichtigen Halbleiterstrukturen
JP3470054B2 (ja) * 1998-12-28 2003-11-25 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
CN2386534Y (zh) * 1999-07-23 2000-07-05 亿光电子工业股份有限公司 发光二极管封装装置
US6852161B2 (en) * 2000-08-18 2005-02-08 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
JP5283293B2 (ja) * 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
JP2002314203A (ja) * 2001-04-12 2002-10-25 Pioneer Electronic Corp ３族窒化物半導体レーザ及びその製造方法
KR100419611B1 (ko) * 2001-05-24 2004-02-25 삼성전기주식회사 발광다이오드 및 이를 이용한 발광장치와 그 제조방법
JP3679097B2 (ja) * 2002-05-31 2005-08-03 株式会社光波 発光素子
KR20040044701A (ko) * 2002-11-21 2004-05-31 삼성전기주식회사 발광소자 패키지 및 그 제조방법
JP4565062B2 (ja) * 2003-03-12 2010-10-20 学校法人早稲田大学 薄膜単結晶の成長方法
JP4020314B2 (ja) * 2003-05-15 2007-12-12 学校法人早稲田大学 Ｇａ２Ｏ３系発光素子およびその製造方法
FR2853141A1 (fr) * 2003-03-26 2004-10-01 Kyocera Corp Appareil a semi-conducteur, procede pour faire croitre un semi-conducteur a nitrure et procede de production d'un appareil a semi-conducteur
CN1198340C (zh) * 2003-04-16 2005-04-20 方大集团股份有限公司 复合量子阱结构GaN基蓝光LED外延片生长方法
JP4754164B2 (ja) * 2003-08-08 2011-08-24 株式会社光波 半導体層

Also Published As

Publication number Publication date
US7524741B2 (en) 2009-04-28
CN100461475C (zh) 2009-02-11
JP2006310765A (ja) 2006-11-09
KR20060105546A (ko) 2006-10-11
DE102006000150A1 (de) 2006-11-30
TW200735410A (en) 2007-09-16
KR100887470B1 (ko) 2009-03-10
US20060223287A1 (en) 2006-10-05
DE102006000150B4 (de) 2018-02-08
CN1841800A (zh) 2006-10-04
TWI317178B (en) 2009-11-11

Similar Documents

Publication Publication Date Title
JP5159040B2 (ja) 低温成長バッファ層の形成方法および発光素子の製造方法
CN103718312B (zh) 用于氮化物半导体发光元件的制造方法、晶圆以及氮化物半导体发光元件
JP2008078613A (ja) 窒化物半導体の製造方法及び窒化物半導体素子
CN103460409A (zh) 用于发光装置的p型掺杂层
JP2010003768A (ja) Ｉｉｉ族窒化物半導体発光素子及びその製造方法、並びにランプ
CN1996626B (zh) 氮化物基发光器件及其制造方法
JP2011517098A (ja) 半極性（Ａｌ，Ｉｎ，Ｇａ，Ｂ）Ｎベースの発光ダイオードの製造のための方法
JP2005064153A (ja) 半導体層
US10116120B2 (en) Semiconductor multilayer film mirror, vertical cavity type light-emitting element using the mirror, and methods for manufacturing the mirror and the element
CN1864277A (zh) 氮化物半导体；使用该半导体的发光器件,发光二极管,激光器件和灯；及其制造方法
JP2002252177A (ja) 半導体素子
JP2014187159A (ja) 半導体発光素子
JP5041883B2 (ja) Ｉｉｉ族窒化物半導体層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法
JP4882351B2 (ja) 半導体積層基板、その製造方法及び発光素子
JP2007227671A (ja) 発光素子
JP5706696B2 (ja) 発光素子の製造方法及び発光素子
JP4806993B2 (ja) Ｉｉｉ−ｖ族化合物半導体膜の形成方法
JP2006032739A (ja) 発光素子
JP2007200933A (ja) 窒化物系半導体素子の製造方法
JP4057473B2 (ja) 化合物半導体発光素子及びその製造方法
JP2006128653A (ja) ３−５族化合物半導体、その製造方法及びその用途
JP2009272316A (ja) 窒化物系半導体素子及びその製造方法
CN101542756A (zh) Ⅲ族氮化物半导体发光元件的制造方法、ⅲ族氮化物半导体发光元件和灯
JP2004172649A (ja) ３−５族化合物半導体発光素子の輝度向上方法
JP2004153287A (ja) ３−５族化合物半導体

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080708

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20080708

A711 Notification of change in applicant

Free format text: JAPANESE INTERMEDIATE CODE: A711

Effective date: 20110126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20110126

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20110307

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110414

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110510

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20110708

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20110817

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111014

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20111220

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120918

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20120920

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121211

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151221

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees