DE102006000150B4 - Verfahren zur Ausbildung einer bei einer niedrigen Temperatur gewachsenen Pufferschicht - Google Patents

Verfahren zur Ausbildung einer bei einer niedrigen Temperatur gewachsenen Pufferschicht Download PDF

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Publication number
DE102006000150B4
DE102006000150B4 DE102006000150.8A DE102006000150A DE102006000150B4 DE 102006000150 B4 DE102006000150 B4 DE 102006000150B4 DE 102006000150 A DE102006000150 A DE 102006000150A DE 102006000150 B4 DE102006000150 B4 DE 102006000150B4
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Prior art keywords
buffer layer
substrate
low temperature
forming
gallium nitride
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Expired - Fee Related
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DE102006000150.8A
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German (de)
English (en)
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DE102006000150A1 (de
Inventor
Yasuhisa Ushida
Daisuke Shinoda
Daisuke Yamazaki
Koji Hirata
Yuhei Ikemoto
Naoki Shibata
Kazuo Aoki
Encarnacion Antonia Garcia Villora
Kiyoshi Shimamura
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Koha Co Ltd
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Koha Co Ltd
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    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K63/00—Receptacles for live fish, e.g. aquaria; Terraria
    • A01K63/06—Arrangements for heating or lighting in, or attached to, receptacles for live fish
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K63/00—Receptacles for live fish, e.g. aquaria; Terraria
    • A01K63/003—Aquaria; Terraria
    • A01K63/006—Accessories for aquaria or terraria
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental Sciences (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Marine Sciences & Fisheries (AREA)
  • Animal Husbandry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE102006000150.8A 2005-03-31 2006-03-30 Verfahren zur Ausbildung einer bei einer niedrigen Temperatur gewachsenen Pufferschicht Expired - Fee Related DE102006000150B4 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005-101603 2005-03-31
JP2005101603 2005-03-31
JP2006-016988 2006-01-25
JP2006016988A JP5159040B2 (ja) 2005-03-31 2006-01-25 低温成長バッファ層の形成方法および発光素子の製造方法

Publications (2)

Publication Number Publication Date
DE102006000150A1 DE102006000150A1 (de) 2006-11-30
DE102006000150B4 true DE102006000150B4 (de) 2018-02-08

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DE102006000150.8A Expired - Fee Related DE102006000150B4 (de) 2005-03-31 2006-03-30 Verfahren zur Ausbildung einer bei einer niedrigen Temperatur gewachsenen Pufferschicht

Country Status (6)

Country Link
US (1) US7524741B2 (enExample)
JP (1) JP5159040B2 (enExample)
KR (1) KR100887470B1 (enExample)
CN (1) CN100461475C (enExample)
DE (1) DE102006000150B4 (enExample)
TW (1) TWI317178B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100102341A1 (en) * 2007-06-15 2010-04-29 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
CN100546058C (zh) * 2007-10-15 2009-09-30 佛山市国星光电股份有限公司 功率发光二极管封装结构
US9048100B2 (en) * 2007-11-21 2015-06-02 Mitsubishi Chemical Corporation Nitride semiconductor and nitride semiconductor crystal growth method
JP2009227545A (ja) * 2008-03-25 2009-10-08 Nippon Light Metal Co Ltd 光デバイス用基板及びその製造方法
KR101020958B1 (ko) 2008-11-17 2011-03-09 엘지이노텍 주식회사 산화갈륨기판 제조방법, 발광소자 및 발광소자 제조방법
JP5529420B2 (ja) * 2009-02-09 2014-06-25 住友電気工業株式会社 エピタキシャルウエハ、窒化ガリウム系半導体デバイスを作製する方法、窒化ガリウム系半導体デバイス、及び酸化ガリウムウエハ
JP5378829B2 (ja) 2009-02-19 2013-12-25 住友電気工業株式会社 エピタキシャルウエハを形成する方法、及び半導体素子を作製する方法
KR101047652B1 (ko) * 2009-12-18 2011-07-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100969127B1 (ko) * 2010-02-18 2010-07-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5706696B2 (ja) * 2011-01-06 2015-04-22 株式会社タムラ製作所 発光素子の製造方法及び発光素子
CN103503148A (zh) * 2011-04-08 2014-01-08 株式会社田村制作所 半导体层叠体及其制造方法以及半导体元件
CN103518008A (zh) * 2011-04-08 2014-01-15 株式会社田村制作所 半导体层叠体及其制造方法和半导体元件
JP2013089616A (ja) * 2011-10-13 2013-05-13 Tamura Seisakusho Co Ltd 結晶積層構造体及びその製造方法
KR20140085508A (ko) * 2011-10-13 2014-07-07 가부시키가이샤 다무라 세이사쿠쇼 결정 적층 구조체 및 그 제조 방법 및 반도체 소자
JP5777479B2 (ja) * 2011-10-14 2015-09-09 株式会社タムラ製作所 β−Ｇａ２Ｏ３系基板の製造方法、及び結晶積層構造体の製造方法
CN103173738A (zh) * 2013-03-22 2013-06-26 新疆大学 一种Ga空位可调的GaN纳米结构的制备方法
JP5734362B2 (ja) * 2013-07-12 2015-06-17 株式会社タムラ製作所 半導体積層構造体及び半導体素子
CN105261683B (zh) * 2015-11-03 2017-10-10 湘能华磊光电股份有限公司 一种提高led外延晶体质量的外延生长方法
JP6934473B2 (ja) * 2016-06-24 2021-09-15 スタンレー電気株式会社 Ｉｉｉ族窒化物半導体発光素子
CN109378371B (zh) * 2018-10-17 2020-10-09 湘能华磊光电股份有限公司 Led外延片生长方法
CN109378377B (zh) * 2018-10-17 2020-06-23 湘能华磊光电股份有限公司 Led外延生长方法
WO2020194763A1 (ja) * 2019-03-28 2020-10-01 日本碍子株式会社 半導体膜
UA124713C2 (uk) * 2019-10-03 2021-11-03 Юрій Юрійович Синиця Акваріум з підсвічуванням
JP7549322B2 (ja) * 2020-04-01 2024-09-11 株式会社ノベルクリスタルテクノロジー 半導体基板及びその製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19905517A1 (de) * 1998-06-05 1999-12-09 Hewlett Packard Co Mehrschichtige Indium-enthaltende Nitridpufferschicht für die Nitrid-Epitaxie
DE19856245A1 (de) * 1998-12-07 2000-06-15 Deutsche Telekom Ag Verfahren zur Herstellung von mehrschichtigen Halbleiterstrukturen
EP1367657A2 (en) * 2002-05-31 2003-12-03 Koha Co., Ltd. Light emitting element and method of making same
WO2005015617A1 (ja) * 2003-08-08 2005-02-17 Koha Co., Ltd. 半導体層

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203388A (ja) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JPH088217B2 (ja) * 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
JP3147316B2 (ja) * 1991-08-05 2001-03-19 日本電信電話株式会社 半導体発光素子の作製方法
JPH07235692A (ja) * 1993-12-30 1995-09-05 Sony Corp 化合物半導体装置及びその形成方法
JP3274271B2 (ja) * 1994-03-09 2002-04-15 株式会社東芝 半導体発光素子
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
US6159834A (en) * 1998-02-12 2000-12-12 Motorola, Inc. Method of forming a gate quality oxide-compound semiconductor structure
US6078064A (en) * 1998-05-04 2000-06-20 Epistar Co. Indium gallium nitride light emitting diode
US6423984B1 (en) 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
JP3470054B2 (ja) * 1998-12-28 2003-11-25 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
CN2386534Y (zh) 1999-07-23 2000-07-05 亿光电子工业股份有限公司 发光二极管封装装置
US6852161B2 (en) * 2000-08-18 2005-02-08 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
JP5283293B2 (ja) 2001-02-21 2013-09-04 ソニー株式会社 半導体発光素子
JP2002314203A (ja) * 2001-04-12 2002-10-25 Pioneer Electronic Corp ３族窒化物半導体レーザ及びその製造方法
KR100419611B1 (ko) 2001-05-24 2004-02-25 삼성전기주식회사 발광다이오드 및 이를 이용한 발광장치와 그 제조방법
KR20040044701A (ko) * 2002-11-21 2004-05-31 삼성전기주식회사 발광소자 패키지 및 그 제조방법
JP4565062B2 (ja) * 2003-03-12 2010-10-20 学校法人早稲田大学 薄膜単結晶の成長方法
JP4020314B2 (ja) * 2003-05-15 2007-12-12 学校法人早稲田大学 Ｇａ２Ｏ３系発光素子およびその製造方法
FR2853141A1 (fr) * 2003-03-26 2004-10-01 Kyocera Corp Appareil a semi-conducteur, procede pour faire croitre un semi-conducteur a nitrure et procede de production d'un appareil a semi-conducteur
CN1198340C (zh) 2003-04-16 2005-04-20 方大集团股份有限公司 复合量子阱结构GaN基蓝光LED外延片生长方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19905517A1 (de) * 1998-06-05 1999-12-09 Hewlett Packard Co Mehrschichtige Indium-enthaltende Nitridpufferschicht für die Nitrid-Epitaxie
DE19856245A1 (de) * 1998-12-07 2000-06-15 Deutsche Telekom Ag Verfahren zur Herstellung von mehrschichtigen Halbleiterstrukturen
EP1367657A2 (en) * 2002-05-31 2003-12-03 Koha Co., Ltd. Light emitting element and method of making same
WO2005015617A1 (ja) * 2003-08-08 2005-02-17 Koha Co., Ltd. 半導体層
EP1653502A1 (en) * 2003-08-08 2006-05-03 Koha Co., Ltd. Semiconductor layer

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