CN100461475C - 形成低温生长缓冲层的方法、以及制造发光元件的方法 - Google Patents

形成低温生长缓冲层的方法、以及制造发光元件的方法 Download PDF

Info

Publication number
CN100461475C
CN100461475C CNB2006100670051A CN200610067005A CN100461475C CN 100461475 C CN100461475 C CN 100461475C CN B2006100670051 A CNB2006100670051 A CN B2006100670051A CN 200610067005 A CN200610067005 A CN 200610067005A CN 100461475 C CN100461475 C CN 100461475C
Authority
CN
China
Prior art keywords
buffer layer
substrate
temperature
low
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100670051A
Other languages
English (en)
Chinese (zh)
Other versions
CN1841800A (zh
Inventor
牛田泰久
筱田大辅
山崎大辅
平田宏治
池本由平
柴田直树
青木和夫
恩卡纳西翁·安东尼亚·加西亚·比略拉
岛村清史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koha Co Ltd
Original Assignee
Toyoda Gosei Co Ltd
Koha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd, Koha Co Ltd filed Critical Toyoda Gosei Co Ltd
Publication of CN1841800A publication Critical patent/CN1841800A/zh
Application granted granted Critical
Publication of CN100461475C publication Critical patent/CN100461475C/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K63/00—Receptacles for live fish, e.g. aquaria; Terraria
    • A01K63/06—Arrangements for heating or lighting in, or attached to, receptacles for live fish
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02414—Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • A—HUMAN NECESSITIES
    • A01—AGRICULTURE; FORESTRY; ANIMAL HUSBANDRY; HUNTING; TRAPPING; FISHING
    • A01K—ANIMAL HUSBANDRY; AVICULTURE; APICULTURE; PISCICULTURE; FISHING; REARING OR BREEDING ANIMALS, NOT OTHERWISE PROVIDED FOR; NEW BREEDS OF ANIMALS
    • A01K63/00—Receptacles for live fish, e.g. aquaria; Terraria
    • A01K63/003—Aquaria; Terraria
    • A01K63/006—Accessories for aquaria or terraria
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Environmental Sciences (AREA)
  • Biodiversity & Conservation Biology (AREA)
  • Marine Sciences & Fisheries (AREA)
  • Animal Husbandry (AREA)
  • Led Devices (AREA)
  • Led Device Packages (AREA)
CNB2006100670051A 2005-03-31 2006-03-31 形成低温生长缓冲层的方法、以及制造发光元件的方法 Expired - Fee Related CN100461475C (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2005101603 2005-03-31
JP2005101603 2005-03-31
JP2006016988A JP5159040B2 (ja) 2005-03-31 2006-01-25 低温成長バッファ層の形成方法および発光素子の製造方法
JP2006016988 2006-01-25

Publications (2)

Publication Number Publication Date
CN1841800A CN1841800A (zh) 2006-10-04
CN100461475C true CN100461475C (zh) 2009-02-11

Family

ID=37071111

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100670051A Expired - Fee Related CN100461475C (zh) 2005-03-31 2006-03-31 形成低温生长缓冲层的方法、以及制造发光元件的方法

Country Status (6)

Country Link
US (1) US7524741B2 (enExample)
JP (1) JP5159040B2 (enExample)
KR (1) KR100887470B1 (enExample)
CN (1) CN100461475C (enExample)
DE (1) DE102006000150B4 (enExample)
TW (1) TWI317178B (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100102341A1 (en) * 2007-06-15 2010-04-29 Rohm Co., Ltd. Semiconductor light emitting device and method for manufacturing the same
CN100546058C (zh) * 2007-10-15 2009-09-30 佛山市国星光电股份有限公司 功率发光二极管封装结构
US9048100B2 (en) * 2007-11-21 2015-06-02 Mitsubishi Chemical Corporation Nitride semiconductor and nitride semiconductor crystal growth method
JP2009227545A (ja) * 2008-03-25 2009-10-08 Nippon Light Metal Co Ltd 光デバイス用基板及びその製造方法
KR101020958B1 (ko) 2008-11-17 2011-03-09 엘지이노텍 주식회사 산화갈륨기판 제조방법, 발광소자 및 발광소자 제조방법
JP5529420B2 (ja) * 2009-02-09 2014-06-25 住友電気工業株式会社 エピタキシャルウエハ、窒化ガリウム系半導体デバイスを作製する方法、窒化ガリウム系半導体デバイス、及び酸化ガリウムウエハ
JP5378829B2 (ja) 2009-02-19 2013-12-25 住友電気工業株式会社 エピタキシャルウエハを形成する方法、及び半導体素子を作製する方法
KR101047652B1 (ko) * 2009-12-18 2011-07-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR100969127B1 (ko) * 2010-02-18 2010-07-09 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
JP5706696B2 (ja) * 2011-01-06 2015-04-22 株式会社タムラ製作所 発光素子の製造方法及び発光素子
CN103503148A (zh) * 2011-04-08 2014-01-08 株式会社田村制作所 半导体层叠体及其制造方法以及半导体元件
CN103518008A (zh) * 2011-04-08 2014-01-15 株式会社田村制作所 半导体层叠体及其制造方法和半导体元件
JP2013089616A (ja) * 2011-10-13 2013-05-13 Tamura Seisakusho Co Ltd 結晶積層構造体及びその製造方法
KR20140085508A (ko) * 2011-10-13 2014-07-07 가부시키가이샤 다무라 세이사쿠쇼 결정 적층 구조체 및 그 제조 방법 및 반도체 소자
JP5777479B2 (ja) * 2011-10-14 2015-09-09 株式会社タムラ製作所 β−Ｇａ２Ｏ３系基板の製造方法、及び結晶積層構造体の製造方法
CN103173738A (zh) * 2013-03-22 2013-06-26 新疆大学 一种Ga空位可调的GaN纳米结构的制备方法
JP5734362B2 (ja) * 2013-07-12 2015-06-17 株式会社タムラ製作所 半導体積層構造体及び半導体素子
CN105261683B (zh) * 2015-11-03 2017-10-10 湘能华磊光电股份有限公司 一种提高led外延晶体质量的外延生长方法
JP6934473B2 (ja) * 2016-06-24 2021-09-15 スタンレー電気株式会社 Ｉｉｉ族窒化物半導体発光素子
CN109378371B (zh) * 2018-10-17 2020-10-09 湘能华磊光电股份有限公司 Led外延片生长方法
CN109378377B (zh) * 2018-10-17 2020-06-23 湘能华磊光电股份有限公司 Led外延生长方法
WO2020194763A1 (ja) * 2019-03-28 2020-10-01 日本碍子株式会社 半導体膜
UA124713C2 (uk) * 2019-10-03 2021-11-03 Юрій Юрійович Синиця Акваріум з підсвічуванням
JP7549322B2 (ja) * 2020-04-01 2024-09-11 株式会社ノベルクリスタルテクノロジー 半導体基板及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249796A (ja) * 1994-03-09 1995-09-26 Toshiba Corp 半導体発光素子
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
CN2386534Y (zh) * 1999-07-23 2000-07-05 亿光电子工业股份有限公司 发光二极管封装装置
CN1460300A (zh) * 2001-02-21 2003-12-03 索尼公司 半导体发光器件及其制造方法、以及电极层连接结构
CN1461060A (zh) * 2003-04-16 2003-12-10 方大集团股份有限公司 复合量子阱结构高亮度GaN基蓝光LED外延片
JP2005064153A (ja) * 2003-08-08 2005-03-10 Koha Co Ltd 半導体層

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03203388A (ja) * 1989-12-29 1991-09-05 Matsushita Electric Ind Co Ltd 半導体発光素子およびその製造方法
JPH088217B2 (ja) * 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
JP3147316B2 (ja) * 1991-08-05 2001-03-19 日本電信電話株式会社 半導体発光素子の作製方法
JPH07235692A (ja) * 1993-12-30 1995-09-05 Sony Corp 化合物半導体装置及びその形成方法
JP3239622B2 (ja) * 1994-08-12 2001-12-17 松下電器産業株式会社 半導体薄膜の形成方法
US6159834A (en) * 1998-02-12 2000-12-12 Motorola, Inc. Method of forming a gate quality oxide-compound semiconductor structure
US6078064A (en) * 1998-05-04 2000-06-20 Epistar Co. Indium gallium nitride light emitting diode
TW398084B (en) * 1998-06-05 2000-07-11 Hewlett Packard Co Multilayered indium-containing nitride buffer layer for nitride epitaxy
US6423984B1 (en) 1998-09-10 2002-07-23 Toyoda Gosei Co., Ltd. Light-emitting semiconductor device using gallium nitride compound semiconductor
DE19856245A1 (de) * 1998-12-07 2000-06-15 Deutsche Telekom Ag Verfahren zur Herstellung von mehrschichtigen Halbleiterstrukturen
JP3470054B2 (ja) * 1998-12-28 2003-11-25 シャープ株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体装置
US6852161B2 (en) * 2000-08-18 2005-02-08 Showa Denko K.K. Method of fabricating group-iii nitride semiconductor crystal, method of fabricating gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor, gallium nitride-based compound semiconductor light-emitting device, and light source using the semiconductor light-emitting device
JP2002314203A (ja) * 2001-04-12 2002-10-25 Pioneer Electronic Corp ３族窒化物半導体レーザ及びその製造方法
KR100419611B1 (ko) 2001-05-24 2004-02-25 삼성전기주식회사 발광다이오드 및 이를 이용한 발광장치와 그 제조방법
JP3679097B2 (ja) * 2002-05-31 2005-08-03 株式会社光波 発光素子
KR20040044701A (ko) * 2002-11-21 2004-05-31 삼성전기주식회사 발광소자 패키지 및 그 제조방법
JP4565062B2 (ja) * 2003-03-12 2010-10-20 学校法人早稲田大学 薄膜単結晶の成長方法
JP4020314B2 (ja) * 2003-05-15 2007-12-12 学校法人早稲田大学 Ｇａ２Ｏ３系発光素子およびその製造方法
FR2853141A1 (fr) * 2003-03-26 2004-10-01 Kyocera Corp Appareil a semi-conducteur, procede pour faire croitre un semi-conducteur a nitrure et procede de production d'un appareil a semi-conducteur

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07249796A (ja) * 1994-03-09 1995-09-26 Toshiba Corp 半導体発光素子
US5930656A (en) * 1996-10-21 1999-07-27 Kabushiki Kaisha Toshiba Method of fabricating a compound semiconductor device
CN2386534Y (zh) * 1999-07-23 2000-07-05 亿光电子工业股份有限公司 发光二极管封装装置
CN1460300A (zh) * 2001-02-21 2003-12-03 索尼公司 半导体发光器件及其制造方法、以及电极层连接结构
CN1461060A (zh) * 2003-04-16 2003-12-10 方大集团股份有限公司 复合量子阱结构高亮度GaN基蓝光LED外延片
JP2005064153A (ja) * 2003-08-08 2005-03-10 Koha Co Ltd 半導体層

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MOCVD生长的GaN单晶膜的蓝带发光研究. 李述体，王立，辛勇，彭学新，熊传兵，姚冬敏，江风益.发光学报，第21卷第1期. 2000 *

Also Published As

Publication number Publication date
JP2006310765A (ja) 2006-11-09
TW200735410A (en) 2007-09-16
US7524741B2 (en) 2009-04-28
KR100887470B1 (ko) 2009-03-10
KR20060105546A (ko) 2006-10-11
JP5159040B2 (ja) 2013-03-06
US20060223287A1 (en) 2006-10-05
DE102006000150B4 (de) 2018-02-08
DE102006000150A1 (de) 2006-11-30
CN1841800A (zh) 2006-10-04
TWI317178B (en) 2009-11-11

Similar Documents

Publication Publication Date Title
CN100461475C (zh) 形成低温生长缓冲层的方法、以及制造发光元件的方法
US8309982B2 (en) Group-III nitride semiconductor light-emitting device, method for manufacturing the same, and lamp
JP5272390B2 (ja) Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
KR101316492B1 (ko) 질화물 반도체 발광소자 및 그 제조 방법
TW200838000A (en) Group-III nitride compound semiconductor device and production method thereof, group-III nitride compound semiconductor light-emitting device and production method thereof, and lamp
CN101506946B (zh) Ⅲ族氮化物化合物半导体发光元件的制造方法、ⅲ族氮化物化合物半导体发光元件和灯
CN101874306A (zh) Ⅲ族氮化物半导体发光元件及其制造方法以及灯
JP2009277882A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2008205267A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ
CN102113140A (zh) Ⅲ族氮化物半导体发光元件的制造方法、ⅲ族氮化物半导体发光元件和灯
CN101405876B (zh) Ⅲ族氮化物半导体发光元件和其制造方法、以及灯
EP2270879A1 (en) Nitride semiconductor light emitting element
CN1864277A (zh) 氮化物半导体；使用该半导体的发光器件,发光二极管,激光器件和灯；及其制造方法
CN106328771A (zh) 一种在金属氮化镓复合衬底上外延无裂纹高晶体质量led外延层的方法
US8278129B2 (en) Manufacturing method of nitride semi-conductor layer, and a nitride semi-conductor light emitting device with its manufacturing method
JP5041883B2 (ja) Ｉｉｉ族窒化物半導体層の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法
JP4882351B2 (ja) 半導体積層基板、その製造方法及び発光素子
JP4806993B2 (ja) Ｉｉｉ−ｖ族化合物半導体膜の形成方法
JP6738455B2 (ja) 電子部品
JP2008053372A (ja) 半導体デバイスの製造方法
JP2008294449A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ
JP2008135463A (ja) Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
CN101542756A (zh) Ⅲ族氮化物半导体发光元件的制造方法、ⅲ族氮化物半导体发光元件和灯
CN114188449A (zh) 一种电子阻挡层生长方法、外延层及led芯片
JP2007194289A (ja) 半導体発光デバイス及びその製造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Free format text: FORMER OWNER: KOHA CO., LTD.

Owner name: KOHA CO., LTD.

Free format text: FORMER OWNER: TOYODA GOSEI CO., LTD.

Effective date: 20110311

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: AICHI, JAPAN TO: TOKYO METROPOLITAN, JAPAN

TR01 Transfer of patent right

Effective date of registration: 20110311

Address after: Tokyo, Japan, Japan

Patentee after: Koha Co., Ltd.

Address before: Aichi

Co-patentee before: Koha Co., Ltd.

Patentee before: Toyoda Gosei Co., Ltd.

CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20090211

Termination date: 20180331

CF01 Termination of patent right due to non-payment of annual fee