CN1198340C - 复合量子阱结构GaN基蓝光LED外延片生长方法 - Google Patents
复合量子阱结构GaN基蓝光LED外延片生长方法 Download PDFInfo
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- CN1198340C CN1198340C CNB031189563A CN03118956A CN1198340C CN 1198340 C CN1198340 C CN 1198340C CN B031189563 A CNB031189563 A CN B031189563A CN 03118956 A CN03118956 A CN 03118956A CN 1198340 C CN1198340 C CN 1198340C
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CNB031189563A CN1198340C (zh) | 2003-04-16 | 2003-04-16 | 复合量子阱结构GaN基蓝光LED外延片生长方法 |
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CNB031189563A CN1198340C (zh) | 2003-04-16 | 2003-04-16 | 复合量子阱结构GaN基蓝光LED外延片生长方法 |
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CN1461060A CN1461060A (zh) | 2003-12-10 |
CN1198340C true CN1198340C (zh) | 2005-04-20 |
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CNB031189563A Expired - Fee Related CN1198340C (zh) | 2003-04-16 | 2003-04-16 | 复合量子阱结构GaN基蓝光LED外延片生长方法 |
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Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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CN1333471C (zh) * | 2004-03-12 | 2007-08-22 | 广镓光电股份有限公司 | 发光半导体装置的缓冲层 |
JP5159040B2 (ja) * | 2005-03-31 | 2013-03-06 | 株式会社光波 | 低温成長バッファ層の形成方法および発光素子の製造方法 |
CN100485988C (zh) * | 2006-10-18 | 2009-05-06 | 武汉华灿光电有限公司 | 增加内量子效率的半导体发光二极管的量子阱结构 |
CN101937954B (zh) * | 2010-07-05 | 2013-03-20 | 扬州中科半导体照明有限公司 | 提高氮化镓基发光二极管内量子效率的外延生长方法 |
CN102306691B (zh) * | 2011-09-02 | 2014-04-30 | 华灿光电股份有限公司 | 一种提高发光二极管发光效率的方法 |
CN103715071B (zh) * | 2013-11-29 | 2016-08-17 | 南京大学扬州光电研究院 | 一种铝铟镓氮四元合金薄膜材料的mocvd外延加工方法 |
CN105679904B (zh) * | 2016-01-29 | 2022-04-01 | 姜全忠 | 光泵浦发光器件及单片集成光泵浦发光器件的制备方法 |
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Owner name: SHENZHEN CITY FANGDA GUOKE OPTOELECTRONICS TECHNO Free format text: FORMER OWNER: FANGDA GROUP CO LTD Effective date: 20080104 |
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Effective date of registration: 20080104 Address after: Guangdong province Shenzhen City Nanshan Xili, Longjing Fangda Patentee after: Shenzhen Fangda Guoke Optical Electronic Technology Co., Ltd. Address before: Guangdong province Shenzhen City Nanshan Xili, Longjing Fangda Patentee before: Fangda Group Co., Ltd. |
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