JP5132306B2 - 光散乱ｅｕｖｌマスク - Google Patents

光散乱ｅｕｖｌマスク Download PDF

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Publication number
JP5132306B2
JP5132306B2 JP2007515303A JP2007515303A JP5132306B2 JP 5132306 B2 JP5132306 B2 JP 5132306B2 JP 2007515303 A JP2007515303 A JP 2007515303A JP 2007515303 A JP2007515303 A JP 2007515303A JP 5132306 B2 JP5132306 B2 JP 5132306B2
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JP
Japan
Prior art keywords
crystalline silicon
silicon layer
ultraviolet
mask
multilayer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2007515303A
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English (en)
Japanese (ja)
Other versions
JP2008500736A (ja
JP2008500736A5 (enExample
Inventor
エミリー・イー・ギャラガー
ルイス・エム・キント
キャリー・ダブリュー・シール
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International Business Machines Corp
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International Business Machines Corp
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Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JP2008500736A publication Critical patent/JP2008500736A/ja
Publication of JP2008500736A5 publication Critical patent/JP2008500736A5/ja
Application granted granted Critical
Publication of JP5132306B2 publication Critical patent/JP5132306B2/ja
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/06—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating using diffraction, refraction or reflection, e.g. monochromators
    • G21K1/062—Devices having a multilayer structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Laminated Bodies (AREA)
JP2007515303A 2004-05-25 2005-05-25 光散乱ｅｕｖｌマスク Expired - Fee Related JP5132306B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/709,733 US7198872B2 (en) 2004-05-25 2004-05-25 Light scattering EUVL mask
US10/709,733 2004-05-25
PCT/US2005/018380 WO2005115743A2 (en) 2004-05-25 2005-05-25 Light scattering euvl mask

Publications (3)

Publication Number Publication Date
JP2008500736A JP2008500736A (ja) 2008-01-10
JP2008500736A5 JP2008500736A5 (enExample) 2008-05-22
JP5132306B2 true JP5132306B2 (ja) 2013-01-30

Family

ID=35425712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515303A Expired - Fee Related JP5132306B2 (ja) 2004-05-25 2005-05-25 光散乱ｅｕｖｌマスク

Country Status (7)

Country Link
US (1) US7198872B2 (enExample)
EP (1) EP1753609A4 (enExample)
JP (1) JP5132306B2 (enExample)
KR (1) KR20070013313A (enExample)
CN (1) CN100416232C (enExample)
TW (1) TWI341549B (enExample)
WO (1) WO2005115743A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980196B2 (en) 2009-03-13 2015-03-17 University Of Utah Research Foundation Fluid-sparged helical channel reactor and associated methods

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI278903B (en) * 2005-09-09 2007-04-11 Delta Electronics Inc Microstructure and manufacturing method thereof
US7960701B2 (en) * 2007-12-20 2011-06-14 Cymer, Inc. EUV light source components and methods for producing, using and refurbishing same
KR20110065439A (ko) * 2008-09-05 2011-06-15 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
KR101576205B1 (ko) * 2008-12-11 2015-12-10 삼성전자주식회사 극자외선 포토마스크, 이를 제조하기 위한 방법 및 장치
CN103034047B (zh) * 2011-09-29 2014-10-29 上海微电子装备有限公司 一种提高分辨率的光刻工艺
JP6079110B2 (ja) * 2012-10-04 2017-02-15 凸版印刷株式会社 反射型フォトマスク
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
CN104749871B (zh) * 2013-12-30 2019-09-03 中芯国际集成电路制造(上海)有限公司 用于反射式光刻技术的掩模版、制作方法及其使用方法
KR20160070897A (ko) * 2014-12-10 2016-06-21 삼성전자주식회사 펠리클 맴브레인 및 그의 제조방법
US9946152B2 (en) * 2016-04-27 2018-04-17 Globalfoundries Inc. Extreme ultraviolet lithography photomasks
NL2018989A (en) * 2016-06-03 2017-12-05 Asml Netherlands Bv Patterning device
CN110546573B (zh) 2017-04-11 2022-10-04 Asml荷兰有限公司 光刻设备
SG11202103911SA (en) * 2018-10-17 2021-05-28 Astrileux Corp Photomask having reflective layer with non-reflective regions
EP3671342B1 (en) * 2018-12-20 2021-03-17 IMEC vzw Induced stress for euv pellicle tensioning
EP3764163B1 (en) * 2019-07-11 2023-04-12 IMEC vzw An extreme ultraviolet lithography device
DE102020208185B4 (de) 2020-06-30 2025-01-30 Carl Zeiss Smt Gmbh Verfahren und Vorrichtungen zum Einstellen eines Seitenwandwinkels eines Pattern-Elements und zum Untersuchen eines Defekts einer fotolithographischen Maske
US11287746B1 (en) * 2020-09-30 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for overlay error reduction
CN115537766B (zh) * 2022-10-20 2024-07-19 江西乾照光电有限公司 掩膜组件及led芯片的制备方法

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4548883A (en) * 1983-05-31 1985-10-22 At&T Bell Laboratories Correction of lithographic masks
JP2542652B2 (ja) * 1987-12-10 1996-10-09 株式会社東芝 Ｘ線露光用マスクの製造方法
JPH0396220A (ja) * 1989-09-08 1991-04-22 Seiko Epson Corp パターン形成用反射型ｘ線マスク
JP2979667B2 (ja) 1991-01-23 1999-11-15 株式会社ニコン 反射型のｘ線露光用マスク
JPH06120125A (ja) * 1991-11-12 1994-04-28 Hitachi Ltd 光学素子およびそれを用いた投影露光装置
JP3341403B2 (ja) * 1993-10-28 2002-11-05 住友電気工業株式会社 反射型マスクおよびその製造方法
JP3336514B2 (ja) * 1994-04-06 2002-10-21 株式会社ニコン Ｘ線反射型マスク及びｘ線投影露光装置
JPH08222497A (ja) * 1995-02-09 1996-08-30 Nikon Corp 反射型マスク
AU5597000A (en) * 1999-06-07 2000-12-28 Regents Of The University Of California, The Coatings on reflective mask substrates
US6229871B1 (en) 1999-07-20 2001-05-08 Euv Llc Projection lithography with distortion compensation using reticle chuck contouring
US6410193B1 (en) * 1999-12-30 2002-06-25 Intel Corporation Method and apparatus for a reflective mask that is inspected at a first wavelength and exposed during semiconductor manufacturing at a second wavelength
US6368942B1 (en) * 2000-03-31 2002-04-09 Euv Llc Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer
US6479195B1 (en) * 2000-09-15 2002-11-12 Intel Corporation Mask absorber for extreme ultraviolet lithography
US6392792B1 (en) * 2000-12-05 2002-05-21 The Regents Of The University Of California Method of fabricating reflection-mode EUV diffraction elements
US6861273B2 (en) * 2001-04-30 2005-03-01 Euv Llc Method of fabricating reflection-mode EUV diffusers
DE10123768C2 (de) 2001-05-16 2003-04-30 Infineon Technologies Ag Verfahren zur Herstellung einer lithographischen Reflexionsmaske insbesondere für die Strukturierung eines Halbleiterwafers sowie Reflexionsmaske
DE10134231B4 (de) * 2001-07-13 2006-06-14 Infineon Technologies Ag EUV-Reflektionsmaske
US6641959B2 (en) * 2001-08-09 2003-11-04 Intel Corporation Absorberless phase-shifting mask for EUV
US6607862B2 (en) * 2001-08-24 2003-08-19 Intel Corporation Damascene extreme ultraviolet lithography alternative phase shift photomask and method of making
DE60309238T2 (de) * 2002-03-08 2007-06-06 Asml Netherlands B.V. Lithographische Maske, lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
JP2004095924A (ja) * 2002-09-02 2004-03-25 Nikon Corp マスク、露光装置及び露光方法
US20050250019A1 (en) * 2004-05-04 2005-11-10 United Microelectronics Corp. Mask device for photolithography and application thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8980196B2 (en) 2009-03-13 2015-03-17 University Of Utah Research Foundation Fluid-sparged helical channel reactor and associated methods

Also Published As

Publication number Publication date
EP1753609A2 (en) 2007-02-21
JP2008500736A (ja) 2008-01-10
US20050266317A1 (en) 2005-12-01
WO2005115743A2 (en) 2005-12-08
WO2005115743A3 (en) 2006-04-27
KR20070013313A (ko) 2007-01-30
US7198872B2 (en) 2007-04-03
CN1950680A (zh) 2007-04-18
TW200539299A (en) 2005-12-01
EP1753609A4 (en) 2011-11-30
CN100416232C (zh) 2008-09-03
TWI341549B (en) 2011-05-01

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