KR100562195B1 - 리소그래피용 마스크, 마스크 제조방법, 리소그래피장치및 디바이스제조방법 - Google Patents
리소그래피용 마스크, 마스크 제조방법, 리소그래피장치및 디바이스제조방법 Download PDFInfo
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- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
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- G—PHYSICS
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- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
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- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
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Abstract
Description
Claims (17)
- 삭제
- 최소 프린팅 피처크기를 갖는 마스크패턴을 형성하는(defining) 65% 보다 높은 반사율의 영역 및 0.5% 보다 낮은 반사율의 영역을 구비한 리소그래피장치용 반사마스크에 있어서,상기 낮은 반사율의 영역은, 상기 낮은 반사율의 영역으로부터의 정반사가 감소되도록 상기 최소 프린팅 피처크기보다 작은 스케일의 텍스처(texture)를 갖는 층을 포함하며,상기 텍스처는 위상회절격자를 포함하는 것을 특징으로 하는 반사마스크.
- 제2항에 있어서,상기 회절격자는 돌출부 및 후퇴부를 포함하고, 상기 돌출부로부터 반사된 노광방사선과 상기 후퇴부로부터 반사된 노광방사선간에 실질적으로 π 라디안의 위상시프트가 있도록 하는 것을 특징으로 하는 반사마스크.
- 제3항에 있어서,상기 돌출부의 전체면적 대 상기 후퇴부의 전체면적비는 2/3 내지 3/2의 범위에 있는 것을 특징으로 하는 반사마스크.
- 제2항 내지 제4항 중 어느 한 항에 있어서,상기 위상회절격자는 제1차수 회절빔이 리소그래피장치의 투영시스템의 퓨필외부에 있도록 하는 피치를 갖는 것을 특징으로 하는 반사마스크.
- 삭제
- 삭제
- 삭제
- 삭제
- 제2항에 있어서,상기 텍스처는 큰 입체각안으로 반사된 빔을 산광시키는 산광기(diffuser)를 형성하고,상기 텍스처는 내부에 복수의 경계부로 구성되며,상기 층은 과립형 재료로 형성되는 것을 특징으로 하는 반사마스크.
- 제2항 내지 제4항 중 어느 한 항에 있어서,상기 층은 탄탈륨(Ta) 및/또는 질화탄탈륨(TaN)으로 구성되는 것을 특징으로 하는 반사마스크.
- 제10항에 있어서,상기 텍스처는 1㎚이상의 rms 거칠기를 갖는 것을 특징으로 하는 반사마스크.
- 삭제
- - 전체적으로 또는 부분적으로는 방사선감응재층으로 덮인 기판을 제공하는 단계;- 방사선시스템을 사용하여 방사선의 투영빔을 제공하는 단계;- 투영빔의 단면에 패턴을 부여하기 위하여 패터닝수단을 사용하는 단계;- 투영시스템을 사용하여 방사선감응재층의 타겟부상에 방사선의 패터닝된 빔을 투영하는 단계를 포함하는 디바이스제조방법에 있어서,상기 패터닝수단을 사용하는 단계는, 상기 패턴을 형성하는 0.5% 보다 낮은 반사율을 갖는 영역 및 65% 보다 높은 반사율을 갖는 영역을 구비한 마스크를 위치설정하는 단계를 포함하며,상기 낮은 반사율의 영역은 상기 투영시스템에 의하여 상기 기판상에서 분해가능한 상기 패턴내의 최소 프린팅피처보다 작은 스케일의 표면텍스처를 갖는 층을 포함하며,상기 텍스처는 돌출부 및 후퇴부를 포함하는 위상회절격자를 포함하며, 상기 돌출부로부터 반사된 투영빔의 방사선과 상기 후퇴부로부터 반사된 투영빔의 방사사선간에 실질적으로 π 라디안의 위상시프트가 있게 하는 것을 특징으로 하는 디바이스제조방법.
- - 방사선의 투영빔을 공급하는 방사선시스템;- 소정패턴에 따라 투영빔을 패터닝하는 역할을 하는 패터닝수단을 지지하는 지지구조체;- 기판을 잡아주는 기판테이블;- 기판의 타겟부상에 패터닝된 빔을 투영하는 투영시스템을 포함하는 리소그래피투영장치에 있어서,상기 방사선시스템 또는 상기 투영시스템내에 포함된 광학요소 중 전부 또는 일부에 흡수층이 마련되고,상기 광학요소의 상기 흡수층에는, 상기 흡수층으로부터의 정반사가 감소되도록 상기 투영시스템에 의하여 분해가능한 최소 피처크기보다 작은 스케일의 텍스처가 제공되며,상기 텍스처는 위상회절격자를 포함하는 것을 특징으로 하는 리소그래피투영장치.
- - 전체적 또는 부분적으로는 방사선감응재층으로 덮인 기판을 제공하는 단계;- 방사선시스템을 사용하여 방사선의 투영빔을 제공하는 단계;- 패터닝수단을 사용하여 투영빔의 단면에 패턴을 부여하는 단계;- 투영시스템을 사용하여 방사선감응재층의 타겟부상에 방사선의 패터닝된 빔을 투영하는 단계를 포함하는 디바이스제조방법에 있어서,흡수층으로부터의 정반사가 감소되도록 상기 투영시스템에 의하여 분해가능한 최소 피처크기보다 작은 스케일의 텍스처가 상기 광학요소의 상기 흡수층에 제공되어, 상기 광학요소상에 제공된 상기 흡수층내에 상기 투염빔의 일부를 흡수하는 단계를 포함하며,상기 텍스처는 위상회절격자를 포함하는 것을 특징으로 하는 디바이스제조방법.
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US (1) | US6927004B2 (ko) |
JP (1) | JP3727317B2 (ko) |
KR (1) | KR100562195B1 (ko) |
CN (1) | CN1302337C (ko) |
DE (1) | DE60309238T2 (ko) |
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US6972843B2 (en) * | 2003-08-25 | 2005-12-06 | Intel Corporation | Lithography alignment |
SG112034A1 (en) * | 2003-11-06 | 2005-06-29 | Asml Netherlands Bv | Optical element, lithographic apparatus comprising such optical element and device manufacturing method |
DE102004017131B4 (de) * | 2004-03-31 | 2005-12-15 | Infineon Technologies Ag | Lithographiemaske für die Herstellung von Halbleiterbauelementen |
US20050250019A1 (en) * | 2004-05-04 | 2005-11-10 | United Microelectronics Corp. | Mask device for photolithography and application thereof |
US7198872B2 (en) * | 2004-05-25 | 2007-04-03 | International Business Machines Corporation | Light scattering EUVL mask |
US7433016B2 (en) | 2005-05-03 | 2008-10-07 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US20070181253A1 (en) * | 2006-02-03 | 2007-08-09 | Ming Xu | Image receiver media and printing process |
US20070292771A1 (en) * | 2006-06-20 | 2007-12-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and system for optimizing intra-field critical dimension uniformity using a sacrificial twin mask |
US7599064B2 (en) * | 2007-03-07 | 2009-10-06 | Asml Netherlands B.V. | Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods |
US7838178B2 (en) * | 2007-08-13 | 2010-11-23 | Micron Technology, Inc. | Masks for microlithography and methods of making and using such masks |
NL1036305A1 (nl) * | 2007-12-21 | 2009-06-23 | Asml Netherlands Bv | Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system. |
NL1036702A1 (nl) | 2008-04-15 | 2009-10-19 | Asml Holding Nv | Diffraction elements for alignment targets. |
EP2333816A4 (en) * | 2008-09-05 | 2014-01-22 | Asahi Glass Co Ltd | REFLECTING MASK ROLLING FOR EUV LITHOGRAPHY AND METHOD OF MANUFACTURING THEREOF |
JP2011108942A (ja) * | 2009-11-19 | 2011-06-02 | Renesas Electronics Corp | 反射型露光用マスク、反射型露光用マスクの製造方法、および、半導体装置の製造方法 |
JP5648392B2 (ja) * | 2010-09-22 | 2015-01-07 | 凸版印刷株式会社 | 反射型フォトマスクブランクおよびその製造方法 |
CN102096318B (zh) * | 2011-01-17 | 2012-05-23 | 南京航空航天大学 | 激光直写技术制备多级结构微阵列的方法 |
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- 2003-03-06 US US10/379,999 patent/US6927004B2/en not_active Expired - Lifetime
- 2003-03-06 CN CNB031107699A patent/CN1302337C/zh not_active Expired - Lifetime
- 2003-03-06 TW TW92104810A patent/TW574597B/zh not_active IP Right Cessation
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US6927004B2 (en) | 2005-08-09 |
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TW574597B (en) | 2004-02-01 |
DE60309238D1 (de) | 2006-12-07 |
CN1302337C (zh) | 2007-02-28 |
JP2003273013A (ja) | 2003-09-26 |
JP3727317B2 (ja) | 2005-12-14 |
TW200307851A (en) | 2003-12-16 |
KR20040002458A (ko) | 2004-01-07 |
DE60309238T2 (de) | 2007-06-06 |
SG106672A1 (en) | 2004-10-29 |
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