SG106672A1 - Mask for use in lithography, method of making a mask, lithographic apparatus, and device manufacturing method - Google Patents

Mask for use in lithography, method of making a mask, lithographic apparatus, and device manufacturing method

Info

Publication number
SG106672A1
SG106672A1 SG200301188A SG200301188A SG106672A1 SG 106672 A1 SG106672 A1 SG 106672A1 SG 200301188 A SG200301188 A SG 200301188A SG 200301188 A SG200301188 A SG 200301188A SG 106672 A1 SG106672 A1 SG 106672A1
Authority
SG
Singapore
Prior art keywords
mask
lithographic apparatus
lithography
making
device manufacturing
Prior art date
Application number
SG200301188A
Other languages
English (en)
Inventor
Markus Franciscus Ant Eurlings
Dijsseldonk Antonius Johan Van
Marcel Mathijs Theodo Dierichs
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG106672A1 publication Critical patent/SG106672A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/52—Reflectors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200301188A 2002-03-08 2003-03-06 Mask for use in lithography, method of making a mask, lithographic apparatus, and device manufacturing method SG106672A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP02251652 2002-03-08

Publications (1)

Publication Number Publication Date
SG106672A1 true SG106672A1 (en) 2004-10-29

Family

ID=27838133

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200301188A SG106672A1 (en) 2002-03-08 2003-03-06 Mask for use in lithography, method of making a mask, lithographic apparatus, and device manufacturing method

Country Status (7)

Country Link
US (1) US6927004B2 (ko)
JP (1) JP3727317B2 (ko)
KR (1) KR100562195B1 (ko)
CN (1) CN1302337C (ko)
DE (1) DE60309238T2 (ko)
SG (1) SG106672A1 (ko)
TW (1) TW574597B (ko)

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DE102004017131B4 (de) * 2004-03-31 2005-12-15 Infineon Technologies Ag Lithographiemaske für die Herstellung von Halbleiterbauelementen
US20050250019A1 (en) * 2004-05-04 2005-11-10 United Microelectronics Corp. Mask device for photolithography and application thereof
US7198872B2 (en) * 2004-05-25 2007-04-03 International Business Machines Corporation Light scattering EUVL mask
US7433016B2 (en) 2005-05-03 2008-10-07 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20070181253A1 (en) * 2006-02-03 2007-08-09 Ming Xu Image receiver media and printing process
US20070292771A1 (en) * 2006-06-20 2007-12-20 Taiwan Semiconductor Manufacturing Company, Ltd. Method and system for optimizing intra-field critical dimension uniformity using a sacrificial twin mask
US7599064B2 (en) * 2007-03-07 2009-10-06 Asml Netherlands B.V. Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method, substrate for use in the methods
US7838178B2 (en) * 2007-08-13 2010-11-23 Micron Technology, Inc. Masks for microlithography and methods of making and using such masks
NL1036305A1 (nl) * 2007-12-21 2009-06-23 Asml Netherlands Bv Grating for EUV-radiation, method for manufacturing the grating and wavefront measurement system.
NL1036702A1 (nl) 2008-04-15 2009-10-19 Asml Holding Nv Diffraction elements for alignment targets.
KR20110065439A (ko) 2008-09-05 2011-06-15 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
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Also Published As

Publication number Publication date
JP2003273013A (ja) 2003-09-26
TW200307851A (en) 2003-12-16
DE60309238T2 (de) 2007-06-06
CN1302337C (zh) 2007-02-28
JP3727317B2 (ja) 2005-12-14
US6927004B2 (en) 2005-08-09
US20030180632A1 (en) 2003-09-25
DE60309238D1 (de) 2006-12-07
KR20040002458A (ko) 2004-01-07
CN1448784A (zh) 2003-10-15
KR100562195B1 (ko) 2006-03-20
TW574597B (en) 2004-02-01

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