JP2008500736A5 - - Google Patents

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Publication number
JP2008500736A5
JP2008500736A5 JP2007515303A JP2007515303A JP2008500736A5 JP 2008500736 A5 JP2008500736 A5 JP 2008500736A5 JP 2007515303 A JP2007515303 A JP 2007515303A JP 2007515303 A JP2007515303 A JP 2007515303A JP 2008500736 A5 JP2008500736 A5 JP 2008500736A5
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JP
Japan
Prior art keywords
mask
semiconductor wafer
scattering region
prevent
prevent printing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2007515303A
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English (en)
Japanese (ja)
Other versions
JP2008500736A (ja
JP5132306B2 (ja
Filing date
Publication date
Priority claimed from US10/709,733 external-priority patent/US7198872B2/en
Application filed filed Critical
Publication of JP2008500736A publication Critical patent/JP2008500736A/ja
Publication of JP2008500736A5 publication Critical patent/JP2008500736A5/ja
Application granted granted Critical
Publication of JP5132306B2 publication Critical patent/JP5132306B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2007515303A 2004-05-25 2005-05-25 光散乱ｅｕｖｌマスク Expired - Fee Related JP5132306B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/709,733 US7198872B2 (en) 2004-05-25 2004-05-25 Light scattering EUVL mask
US10/709,733 2004-05-25
PCT/US2005/018380 WO2005115743A2 (en) 2004-05-25 2005-05-25 Light scattering euvl mask

Publications (3)

Publication Number Publication Date
JP2008500736A JP2008500736A (ja) 2008-01-10
JP2008500736A5 true JP2008500736A5 (enExample) 2008-05-22
JP5132306B2 JP5132306B2 (ja) 2013-01-30

Family

ID=35425712

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007515303A Expired - Fee Related JP5132306B2 (ja) 2004-05-25 2005-05-25 光散乱ｅｕｖｌマスク

Country Status (7)

Country Link
US (1) US7198872B2 (enExample)
EP (1) EP1753609A4 (enExample)
JP (1) JP5132306B2 (enExample)
KR (1) KR20070013313A (enExample)
CN (1) CN100416232C (enExample)
TW (1) TWI341549B (enExample)
WO (1) WO2005115743A2 (enExample)

Families Citing this family (23)

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TWI278903B (en) * 2005-09-09 2007-04-11 Delta Electronics Inc Microstructure and manufacturing method thereof
US7960701B2 (en) * 2007-12-20 2011-06-14 Cymer, Inc. EUV light source components and methods for producing, using and refurbishing same
KR20110065439A (ko) * 2008-09-05 2011-06-15 아사히 가라스 가부시키가이샤 Ｅｕｖ 리소그래피용 반사형 마스크 블랭크 및 그 제조 방법
KR101576205B1 (ko) * 2008-12-11 2015-12-10 삼성전자주식회사 극자외선 포토마스크, 이를 제조하기 위한 방법 및 장치
WO2010105266A2 (en) 2009-03-13 2010-09-16 University Of Utah Research Foundation Fluid-sparged helical channel reactor and associated methods
CN103034047B (zh) * 2011-09-29 2014-10-29 上海微电子装备有限公司 一种提高分辨率的光刻工艺
JP6079110B2 (ja) * 2012-10-04 2017-02-15 凸版印刷株式会社 反射型フォトマスク
US9612521B2 (en) 2013-03-12 2017-04-04 Applied Materials, Inc. Amorphous layer extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
US9632411B2 (en) 2013-03-14 2017-04-25 Applied Materials, Inc. Vapor deposition deposited photoresist, and manufacturing and lithography systems therefor
US9417515B2 (en) 2013-03-14 2016-08-16 Applied Materials, Inc. Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
US20140272684A1 (en) 2013-03-12 2014-09-18 Applied Materials, Inc. Extreme ultraviolet lithography mask blank manufacturing system and method of operation therefor
US9354508B2 (en) 2013-03-12 2016-05-31 Applied Materials, Inc. Planarized extreme ultraviolet lithography blank, and manufacturing and lithography systems therefor
CN104749871B (zh) * 2013-12-30 2019-09-03 中芯国际集成电路制造(上海)有限公司 用于反射式光刻技术的掩模版、制作方法及其使用方法
KR20160070897A (ko) * 2014-12-10 2016-06-21 삼성전자주식회사 펠리클 맴브레인 및 그의 제조방법
US9946152B2 (en) * 2016-04-27 2018-04-17 Globalfoundries Inc. Extreme ultraviolet lithography photomasks
NL2018989A (en) * 2016-06-03 2017-12-05 Asml Netherlands Bv Patterning device
CN110546573B (zh) 2017-04-11 2022-10-04 Asml荷兰有限公司 光刻设备
SG11202103911SA (en) * 2018-10-17 2021-05-28 Astrileux Corp Photomask having reflective layer with non-reflective regions
EP3671342B1 (en) * 2018-12-20 2021-03-17 IMEC vzw Induced stress for euv pellicle tensioning
EP3764163B1 (en) * 2019-07-11 2023-04-12 IMEC vzw An extreme ultraviolet lithography device
DE102020208185B4 (de) 2020-06-30 2025-01-30 Carl Zeiss Smt Gmbh Verfahren und Vorrichtungen zum Einstellen eines Seitenwandwinkels eines Pattern-Elements und zum Untersuchen eines Defekts einer fotolithographischen Maske
US11287746B1 (en) * 2020-09-30 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for overlay error reduction
CN115537766B (zh) * 2022-10-20 2024-07-19 江西乾照光电有限公司 掩膜组件及led芯片的制备方法

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US6392792B1 (en) * 2000-12-05 2002-05-21 The Regents Of The University Of California Method of fabricating reflection-mode EUV diffraction elements
US6861273B2 (en) * 2001-04-30 2005-03-01 Euv Llc Method of fabricating reflection-mode EUV diffusers
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US20050250019A1 (en) * 2004-05-04 2005-11-10 United Microelectronics Corp. Mask device for photolithography and application thereof

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