JP5122059B2 - 金属ゲートパターンを有する半導体素子の製造方法 - Google Patents
金属ゲートパターンを有する半導体素子の製造方法 Download PDFInfo
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- JP5122059B2 JP5122059B2 JP2003313274A JP2003313274A JP5122059B2 JP 5122059 B2 JP5122059 B2 JP 5122059B2 JP 2003313274 A JP2003313274 A JP 2003313274A JP 2003313274 A JP2003313274 A JP 2003313274A JP 5122059 B2 JP5122059 B2 JP 5122059B2
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- 229910052751 metal Inorganic materials 0.000 title claims description 170
- 239000002184 metal Substances 0.000 title claims description 170
- 238000000034 method Methods 0.000 title claims description 117
- 239000004065 semiconductor Substances 0.000 title claims description 47
- 238000004519 manufacturing process Methods 0.000 title claims description 35
- 239000007789 gas Substances 0.000 claims description 76
- 238000007254 oxidation reaction Methods 0.000 claims description 74
- 230000003647 oxidation Effects 0.000 claims description 72
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 56
- 229910052710 silicon Inorganic materials 0.000 claims description 56
- 239000010703 silicon Substances 0.000 claims description 56
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 39
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 37
- 229920005591 polysilicon Polymers 0.000 claims description 37
- 229910052760 oxygen Inorganic materials 0.000 claims description 34
- 238000006243 chemical reaction Methods 0.000 claims description 28
- 229910052721 tungsten Inorganic materials 0.000 claims description 28
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 27
- 239000001301 oxygen Substances 0.000 claims description 27
- 239000010937 tungsten Substances 0.000 claims description 26
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 22
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 18
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 13
- 239000000463 material Substances 0.000 claims description 13
- 230000001590 oxidative effect Effects 0.000 claims description 12
- -1 tungsten nitride Chemical class 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 7
- 238000009279 wet oxidation reaction Methods 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 4
- 229910052715 tantalum Inorganic materials 0.000 claims description 4
- 229910018509 Al—N Inorganic materials 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- KHYBPSFKEHXSLX-UHFFFAOYSA-N iminotitanium Chemical compound [Ti]=N KHYBPSFKEHXSLX-UHFFFAOYSA-N 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 150000002500 ions Chemical class 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- 229910052914 metal silicate Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910001000 nickel titanium Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910015345 MOn Inorganic materials 0.000 claims description 2
- 229910021529 ammonia Inorganic materials 0.000 claims description 2
- 239000011810 insulating material Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 238000005137 deposition process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 245
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 8
- 229910001882 dioxygen Inorganic materials 0.000 description 8
- 238000001312 dry etching Methods 0.000 description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 5
- 229910000077 silane Inorganic materials 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000010405 reoxidation reaction Methods 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007800 oxidant agent Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005019 vapor deposition process Methods 0.000 description 2
- 241000293849 Cordylanthus Species 0.000 description 1
- 229910003134 ZrOx Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000001878 scanning electron micrograph Methods 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28247—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon passivation or protection of the electrode, e.g. using re-oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4941—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a barrier layer between the silicon and the metal or metal silicide upper layer, e.g. Silicide/TiN/Polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Description
12 ゲート絶縁層
14 第1ゲート導電層
16 第2ゲート導電層
18 第3ゲート導電層
20 ゲートマスク層
22 第1キャッピング層
24 第2キャッピング層
22a 第1キャッピング層スペーサ
24a 第2キャッピング層スペーサ
Claims (22)
- シリコン基板上にゲート絶縁層を形成する段階と、
前記ゲート絶縁層が形成されたシリコン基板上に少なくとも金属層とポリシリコンとを含む金属ゲート物質層を蒸着する段階と、
前記金属ゲート物質層をエッチングして金属ゲートパターンを形成する段階と、
前記金属ゲートパターン上にキャッピング層を形成する段階と、
前記金属ゲートパターンを形成するためのエッチング時に発生したダメージをキュアリングするために前記金属ゲートパターンに含まれている前記金属層の酸化を抑制しつつ、前記金属ゲートパターンのエッジにある前記ポリシリコンを選択的に酸化させる選択的酸化工程を行う段階と、を順次遂行し、
前記キャッピング層を形成する段階は、前記金属ゲートパターン内に含まれている前記金属層の酸化が起らないように前記金属ゲートパターンが形成された前記半導体基板の全面にシリコンオキサイド層を形成する段階を含み、
前記選択的酸化工程を行う段階は、H2OとH2との分圧比を利用した湿式酸化工程であり、
前記選択的酸化工程によって前記金属ゲートパターンの中央における前記ゲート絶縁層の厚さ増加が10Å以内になり、
前記シリコンオキサイド層を形成する段階は、
前記金属ゲートパターンが形成された前記シリコン基板を蒸着工程が行われる反応チャンバ内にローディングする段階と、
前記反応チャンバ内に低温で分解できる窒素元素を含む窒素雰囲気ガスを投入して前記反応チャンバ内を窒素雰囲気に形成する段階と、
前記反応チャンバ内にシリコンソースガス及び酸素ソースガスを投入して前記金属ゲートパターンが形成された前記半導体基板の全面に前記シリコンオキサイド層を蒸着する段階と、を含み、
前記窒素雰囲気ガスとして、酸素元素を含まないガスを使用する
ことを特徴とする金属ゲートパターンを有する半導体素子の製造方法。 - 前記ゲート絶縁層は、シリコンオキサイド(SiO2)、シリコンオキシナイトライド(SiON)、シリコンナイトライド(SiN)、金属酸化物、金属シリケートのいずれかの絶縁性物質層を少なくとも一層以上含む
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記金属層は、W、Ni、Co、TaN、Ru−Ta、TiN、Ni−Ti、Ti−Al−N、Zr、Hf、Ti、Ta、Mo、MoN、WN、Ta−Pt、Ta−Tiのうちの何れか一つである
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記金属ゲートパターンは、金属層/バリヤ金属層/ポリシリコン層/ゲート絶縁層または金属層/ポリシリコン層/ゲート絶縁層を含んでなる
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記金属ゲートパターンは、ゲートマスク層/タングステン層/タングステンナイトライド層/ポリシリコン層/ゲート絶縁層よりなる
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記キャッピング層の前記シリコンオキサイド層は500Å以下に形成する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記窒素雰囲気ガスとして、アンモニア(NH3)ガスを使用する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記シリコンソースガスとして、SiH4、Si2H6、DCS、TCS、HCDのうちの何れか一つを使用する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記酸素ソースガスとして、N2O、NOまたはO2を使用する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記シリコンソースガスを前記酸素ソースガスよりも少なくとも先に投入する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記シリコンソースガス及び前記酸素ソースガスを同時に投入する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記窒素雰囲気ガスは、前記酸素ソースガスの投入後にその投入を中断する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記窒素雰囲気ガスは、前記酸素ソースガスの投入と同時にその投入を中断する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記窒素雰囲気ガスは、前記シリコンソースガスまたは酸素ソースガスの投入前にその投入を中断する
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記シリコンオキサイド層を蒸着する段階は、熱的化学気相蒸着法によって行う
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記シリコンオキサイド層を蒸着する段階は、リモートプラズマを利用したプラズマ強化化学気相蒸着(PECVD)法によって行う
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記シリコンオキサイド層を蒸着した以後、前記シリコンオキサイド層を異方性エッチングして前記金属ゲートパターンの側壁にシリコンオキサイドスペーサを形成する段階をさらに含む
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記シリコンオキサイド層を蒸着した以後、前記シリコンオキサイド層の全面にシリコンナイトライド層を蒸着する段階をさらに含む
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記シリコンナイトライド層を蒸着した以後、前記シリコンナイトライド層を異方性エッチングして前記金属ゲートパターンの側壁に形成された前記シリコンオキサイド層上にシリコンナイトライドスペーサを形成する段階をさらに含む
ことを特徴とする請求項18に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記選択的酸化工程を行う段階以後に、前記金属ゲートパターンをイオン注入マスクとして前記シリコン基板内に不純物イオンを注入する段階をさらに含む
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記金属ゲートパターンの長さは100nm以下である
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。 - 前記キャッピング層はシリコンオキサイド層であり、前記選択的酸化工程を行った段階以後に前記ポリシリコンの側壁に形成された前記シリコンオキサイド層の厚さが、前記金属層の側壁に形成された前記シリコンオキサイド層の厚さより厚い
ことを特徴とする請求項1に記載の金属ゲートパターンを有する半導体素子の製造方法。
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Application Number | Priority Date | Filing Date | Title |
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KR2002-057456 | 2002-09-19 | ||
KR10-2002-0057456A KR100459725B1 (ko) | 2002-09-19 | 2002-09-19 | 금속 게이트 패턴을 갖는 반도체소자의 제조방법 |
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JP2011179112A Division JP5492842B2 (ja) | 2002-09-19 | 2011-08-18 | 半導体素子 |
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JP5122059B2 true JP5122059B2 (ja) | 2013-01-16 |
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US7666746B2 (en) * | 2008-01-14 | 2010-02-23 | International Business Machines Corporation | Semiconductor transistors having high-K gate dielectric layers, metal gate electrode regions, and low fringing capacitances |
US20100062592A1 (en) * | 2008-09-09 | 2010-03-11 | Tokyo Electron Limited | Method for forming gate spacers for semiconductor devices |
US8148249B2 (en) * | 2008-09-12 | 2012-04-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of fabricating high-k metal gate devices |
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KR100541701B1 (ko) * | 1999-12-15 | 2006-01-12 | 주식회사 하이닉스반도체 | 반도체소자 제조방법 |
KR100344841B1 (ko) * | 2000-08-19 | 2002-07-20 | 주식회사 하이닉스반도체 | 반도체 소자의 듀얼 게이트 산화막 형성 방법 |
KR20030005603A (ko) * | 2001-07-09 | 2003-01-23 | 주식회사 하이닉스반도체 | 반도체 장치의 게이트 및 그의 제조방법 |
KR20030093445A (ko) * | 2002-06-03 | 2003-12-11 | 주식회사 하이닉스반도체 | 반도체소자의 게이트전극 형성방법 |
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KR100459725B1 (ko) | 2004-12-03 |
US20060270204A1 (en) | 2006-11-30 |
KR20040025479A (ko) | 2004-03-24 |
US7306996B2 (en) | 2007-12-11 |
US7544996B2 (en) | 2009-06-09 |
US7772643B2 (en) | 2010-08-10 |
US7109104B2 (en) | 2006-09-19 |
US20060270205A1 (en) | 2006-11-30 |
JP2011258977A (ja) | 2011-12-22 |
CN1490845A (zh) | 2004-04-21 |
US20040132272A1 (en) | 2004-07-08 |
JP2004111962A (ja) | 2004-04-08 |
US20090250752A1 (en) | 2009-10-08 |
JP5492842B2 (ja) | 2014-05-14 |
CN100452301C (zh) | 2009-01-14 |
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