JP5090740B2 - ブール成長された炭化ケイ素ドリフト層を使用してパワー半導体デバイスを形成する方法 - Google Patents
ブール成長された炭化ケイ素ドリフト層を使用してパワー半導体デバイスを形成する方法 Download PDFInfo
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 140
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 138
- 238000000034 method Methods 0.000 title claims description 38
- 239000004065 semiconductor Substances 0.000 title description 8
- 239000002019 doping agent Substances 0.000 claims description 23
- 238000000137 annealing Methods 0.000 claims description 10
- 125000004437 phosphorous atom Chemical group 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 6
- 229910052698 phosphorus Inorganic materials 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 4
- 239000011574 phosphorus Substances 0.000 claims description 4
- 238000005092 sublimation method Methods 0.000 claims description 4
- 238000003949 trap density measurement Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000005130 seeded sublimation method Methods 0.000 claims 2
- 108091006146 Channels Proteins 0.000 description 18
- 235000012431 wafers Nutrition 0.000 description 17
- 239000000463 material Substances 0.000 description 12
- 239000000758 substrate Substances 0.000 description 7
- 238000000859 sublimation Methods 0.000 description 5
- 230000008022 sublimation Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000009377 nuclear transmutation Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/772—Field effect transistors
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- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
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- C30—CRYSTAL GROWTH
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Description
Claims (11)
- 10kV以上の定格ブロッキング電圧を有する炭化ケイ素MOSFETデバイスを形成する方法であって、
種結晶を用いた昇華成長技法または高温CVD成長技法を使用して炭化ケイ素ブールを形成するステップと、
十分なフルエンスの熱中性子を前記炭化ケイ素ブールに照射して、それによって前記炭化ケイ素ブール内において一部のシリコン原子をリン原子に変えるステップと、
前記照射済みの炭化ケイ素ブールから炭化ケイ素ウエハを形成するステップと、
その中のトラップ密度を低下させるのに十分な温度で前記炭化ケイ素ウエハをアニールすることにより、その中に約2×1015cm−3未満である正味n型ドーパント濃度を有するブール成長炭化ケイ素ドリフト層を形成するステップと、
前記炭化ケイ素ドリフト層上にp型炭化ケイ素ベース領域を形成するステップと、
前記p型炭化ケイ素ベース領域と共にp−n整流接合を画成するn型炭化ケイ素ソース領域を形成するステップと、
前記p型炭化ケイ素ベース領域上にゲート電極を形成するステップと
を含むことを特徴とする方法。 - 前記炭化ケイ素ドリフト層は、約100μmから約400μmの範囲の厚みを有することを特徴とする請求項1に記載の方法。
- 高電圧炭化ケイ素デバイスを形成する方法であって、
種結晶を用いた昇華成長技法または高温CVD成長技法を使用して炭化ケイ素ブールを形成するステップと、
十分なフルエンスの熱中性子を前記炭化ケイ素ブールに照射して、それによって前記炭化ケイ素ブール内において一部のシリコン原子をリン原子に変えるステップと、
前記照射済みの炭化ケイ素ブールから炭化ケイ素ウエハを形成するステップと、
その中の50ナノ秒を超過する固有少数キャリア寿命を実現するのに十分な温度で前記炭化ケイ素ウエハをアニールすることにより、その中に約2×1015cm−3未満である正味n型ドーパント濃度を有するブール成長炭化ケイ素ドリフト層を形成するステップと、
前記炭化ケイ素ドリフト層上にn型炭化ケイ素層およびp型炭化ケイ素層を形成するステップと
を含むことを特徴とする方法。 - 前記炭化ケイ素ドリフト層は、約100μmから約400μmの範囲の厚みを有することを特徴とする請求項3に記載の方法。
- 10kV以上の定格ブロッキング電圧を有する炭化ケイ素JFETを形成する方法であって、
その中に約2×1015cm−3未満である正味リン濃度を有するブール成長炭化ケイ素ドリフト層を形成するステップと、
その中のトラップ密度を低下させるのに十分に高い温度で前記ブール成長炭化ケイ素層をアニールするステップと、
前記炭化ケイ素ドリフト層上にn型炭化ケイ素エピ層を形成するステップと、
前記n型炭化ケイ素エピ層中にn型炭化ケイ素ソース領域を形成するステップと、
前記n型炭化ケイ素エピ層上にp型炭化ケイ素ゲート電極を形成するステップと
を含むことを特徴とする方法。 - n型炭化ケイ素エピ層を形成する前記ステップは、前記炭化ケイ素ドリフト層中にp型炭化ケイ素埋込み領域を形成するステップによって先行され、n型炭化ケイ素エピ層を形成する前記ステップは、前記p型炭化ケイ素埋込み領域と共にp−n整流接合を画成し、前記炭化ケイ素ドリフト層と共に非整流接合を画成するn型炭化ケイ素エピ層を形成するステップを含み、p型炭化ケイ素ゲート電極を形成する前記ステップは、前記p型炭化ケイ素埋込み領域の一部分に対向して延びるp型炭化ケイ素ゲート電極を形成するステップを含むことを特徴とする請求項5に記載の方法。
- 前記n型炭化ケイ素ソース領域および前記p型炭化ケイ素埋込み領域と抵抗接触するソース電極を形成するステップをさらに含むことを特徴とする請求項6に記載の方法。
- ブール成長炭化ケイ素ドリフト層を形成する前記ステップは、その中のトラップ密度を低下させるのに十分に高い温度でブール成長炭化ケイ素ウエハをアニールするステップを含むことを特徴とする請求項6に記載の方法。
- 前記ブール成長炭化ケイ素ドリフト層を形成するステップは、
種結晶を用いた昇華成長技法を使用して炭化ケイ素ブールを形成するステップと、
十分なフルエンスの熱中性子を前記炭化ケイ素ブールに照射して、それによって前記炭化ケイ素ブール内においてシリコン原子をリン原子に変えるステップと
を含むことを特徴とする請求項5に記載の方法。 - 前記炭化ケイ素ドリフト層は、約100μmから約400μmの範囲の厚みを有することを特徴とする請求項9に記載の方法。
- 炭化ケイ素ドリフト層を形成する前記ステップは、前記炭化ケイ素ウエハを平坦化するステップをさらに含むことを特徴とする請求項1に記載の方法。
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US10/686,795 US6974720B2 (en) | 2003-10-16 | 2003-10-16 | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
US10/686,795 | 2003-10-16 | ||
PCT/US2004/031883 WO2005041305A1 (en) | 2003-10-16 | 2004-09-29 | Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby |
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JP2012020732A Active JP5829934B2 (ja) | 2003-10-16 | 2012-02-02 | ブール成長された炭化ケイ素ドリフト層を使用してパワー半導体デバイスを形成する方法、およびそれによって形成されるパワー半導体デバイス |
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EP (1) | EP1683201B1 (ja) |
JP (2) | JP5090740B2 (ja) |
KR (1) | KR20070029633A (ja) |
CN (1) | CN100474612C (ja) |
CA (1) | CA2542704A1 (ja) |
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KR20070029633A (ko) | 2007-03-14 |
TW200518356A (en) | 2005-06-01 |
EP1683201B1 (en) | 2013-01-09 |
CN1868066A (zh) | 2006-11-22 |
CN100474612C (zh) | 2009-04-01 |
JP5829934B2 (ja) | 2015-12-09 |
JP2012134513A (ja) | 2012-07-12 |
WO2005041305A1 (en) | 2005-05-06 |
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