JP5328930B2 - 電流シフト領域を有する半導体デバイスおよび関連方法 - Google Patents
電流シフト領域を有する半導体デバイスおよび関連方法 Download PDFInfo
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Description
本発明は、電子デバイスに関するものであって、さらに詳細には半導体メサ構造を含む電子デバイスとそれに関連する方法に関する。
本発明は、米国陸軍研究所によって与えられた契約W911NF−04−2−0022号のもとで政府の支援によって行われた。米国政府は本発明に対してある一定の権利を有する。
本出願は、「Stable Power Devices On Low−Angle Off−Cut Silicon Carbide Crystals(小角度だけ軸から外して切断された炭化珪素結晶の上の安定なパワー・デバイス)」と題する2008年12月1日付けの米国特許仮出願第61/118,825号の優先権を主張する。この開示は、ここに参照によってその全体が取り込まれ援用される。
本発明のいくつかの実施の形態に従えば、バイポーラ半導体デバイスは、第1の伝導形を有する半導体バッファ層と、バッファ層の表面にあって第1の伝導形を有する半導体メサとを含む。半導体メサと半導体バッファ層との間の隅に隣接して第2の伝導形を有する電流シフト領域が設けられる。さらに、第1と第2の伝導形は、互いに異なっており、また電流シフト領域は、半導体バッファ層部分と半導体メサ部分との間にあって第1の伝導形を有する。
ここからは、発明の実施の形態を示している添付図面を参照しながら本発明の実施の形態についてより詳しく説明する。ただし、本発明は、多くの異なる形態として実現でき、ここに提示する実施の形態に限定すべきではない。むしろ、これらの実施の形態は、この開示が完全なものとなるように与えられるものであって、当業者に対して発明の範囲を完全に伝えるものである。全体を通して、同様な要素に対して同じ参照符号が用いられる。
(<ワン、ワン、ツーバー、ゼロ>)方向に向かって角度α(アルファ)だけ外して切断された一般に炭化珪素結晶のC面に対応する表面を有する結晶多形4HのSiC基板(4H−polytype SiC)である。約4度よりも大きくない角度だけ軸から外して切断された表面には、軸に沿って切断された表面(すなわち、角度0だけ軸から外して切断された表面)も含まれる。小角度だけ軸から外して切断されたSiC基板については、例えば、その開示がここに参照によってその全体を取り込まれ援用される「Stable Power Devices On Low−Angle Off−Cut Silicon Carbide Crystals(小角度だけ軸から外して切断された炭化珪素結晶上の安定したパワー・デバイス)」と題する2008年12月1日付けの米国特許仮出願第61/118,825号に述べられている。基板219’上の半導体層/領域の各々(例えば、ドリフト層217’、ベース層215’、バッファ層209’、メサ203’、ベース・コンタクト領域207’および電流シフト領域211’)は、エピタキシャル堆積、注入/拡散および/又はエッチングを用いて形成されるSiC層/領域である。従って、基板219’上の半導体層/領域の各々(例えば、ドリフト層217’、ベース層215’、バッファ層209’、メサ203’、ベース・コンタクト領域207’および電流シフト領域211’)は、基板219’の結晶構造に揃った単結晶構造を有する。
(<ワン、ワン、ツーバー、ゼロ>)方向に向かって角度α(アルファ)だけ外して切断された一般に炭化珪素結晶のC面に対応する表面を有する4H結晶多形のSiC基板である。小角度だけ軸から外して切断されたSiC基板については、例えば、その開示がここに参照によってその全体を取り込まれ援用される「Stable Power Devices On Low−Angle Off−Cut Silicon Carbide Crystals(小角度だけ軸から外して切断された炭化珪素結晶上の安定したパワー・デバイス)」と題する2008年12月1日付けの米国特許仮出願第61/118,825号に述べられている。基板219’’上の半導体層/領域の各々(例えば、ドリフト層217’’と218’’、ゲート層215’’、バッファ層209’’、メサ203’’、ゲート・コンタクト領域207’’および電流シフト領域211’’)は、エピタキシャル堆積、注入/拡散および/又はエッチングを用いて形成されたSiC層/領域である。従って、基板219’’上の半導体層/領域の各々(例えば、ドリフト層217’’、ゲート層215’’、バッファ層209’’、メサ203’’、ゲート・コンタクト領域207’’および電流シフト領域211’’)は、基板219’’の結晶構造に揃った単結晶構造を有する。
Claims (11)
- 半導体デバイスであって、
第1の伝導形を有する半導体バッファ層と、
前記半導体バッファ層の上にあって前記第1の伝導形を有する半導体メサと、
前記半導体メサの基部に隣接し、前記半導体バッファ層中にあって第2の伝導形を有する電流シフト領域であって、前記第1と第2の伝導形が互いに異なる伝導形である前記電流シフト領域と、
前記第2の伝導形を有する半導体制御層であって、前記半導体バッファ層は、前記半導体制御層の上にあり、そのため前記半導体バッファ層が前記半導体制御層と前記半導体メサとの間に位置し、前記半導体バッファ層が前記電流シフト領域と前記半導体制御層との間に位置する前記半導体制御層と、
前記第2の伝導形を有する制御コンタクト領域であって、前記制御コンタクト領域が前記半導体制御層に電気的に結合するように前記半導体バッファ層を貫通して延びており、前記制御コンタクト領域が前記電流シフト領域から分離されるため、前記電流シフト領域が前記制御コンタクト領域から電気的に分離される前記制御コンタクト領域と、
を含む前記半導体デバイス。 - 請求項1に記載の半導体デバイスであって、前記電流シフト領域が、前記半導体バッファ層と前記半導体メサとの間で少なくとも約0.5マイクロメートルの距離だけ広がっており、前記半導体メサが、前記第1の伝導形の第1のドーパント濃度を有するオーミック・コンタクト領域および前記第1の伝導形の第2のドーパント濃度を有するベース領域を含んでおり、前記第1のドーパント濃度が前記第2のドーパント濃度よりも大きくなっており、前記オーミック・コンタクト領域が、前記電流シフト領域から分離されている、
前記半導体デバイス。 - 請求項2に記載の半導体デバイスであって、さらに
前記半導体メサに隣接する半導体ステップであって、前記半導体バッファ層の表面に対して垂直な方向での前記半導体ステップの厚さが前記半導体バッファ層の表面に対して垂直な方向での前記半導体メサの厚さよりも小さい前記半導体ステップ、
を含む前記半導体デバイス。 - 請求項1に記載の半導体デバイスであって、さらに
前記半導体メサの表面上に位置する金属電極であって、前記半導体メサが前記金属電極と前記半導体バッファ層との間に位置し、また前記半導体バッファ層に隣接する前記半導体メサの中央部分は、前記金属電極から前記半導体メサに対向する前記半導体バッファ層の表面への第1の伝導形の電流経路を提供し、および/又は前記半導体メサに対向する前記半導体バッファ層の表面から前記金属電極への第1の伝導形の電流経路を提供する電流シフト領域を含まない金属電極、
を含む前記半導体デバイス。 - 請求項1に記載の半導体デバイスであって、前記電流シフト領域が、前記半導体メサと前記半導体バッファ層との間の1つの隅から電流を遠ざけるようにシフトするように構成されている前記半導体デバイス。
- 請求項1に記載の半導体デバイスであって、前記電流シフト領域が、前記半導体メサを含まない前記半導体バッファ層部分へ広がっている前記半導体デバイス。
- 請求項1に記載の半導体デバイスであって、さらに
前記第1の伝導形を有する半導体ドリフト層であって、前記半導体制御層が前記半導体ドリフト層の上に位置し、そのために前記半導体制御層が前記半導体ドリフト層と前記半導体バッファ層との間に位置する前記半導体ドリフト層と、
前記半導体メサの上にある第1の金属電極であって、そのため前記半導体メサが前記第1の金属電極と前記半導体バッファ層との間に位置する前記第1の金属電極と、
前記制御コンタクト領域の上に位置する第2の金属電極であって、そのため前記制御コンタクト領域が前記第2の金属電極と前記半導体制御層との間に位置する前記第2の金属電極と、
第3の金属電極であって、前記半導体ドリフト層は前記第3の金属電極の上に位置し、そのため前記半導体ドリフト層が前記第3の金属電極と前記半導体制御層との間にある、前記第3の金属電極と、
を含む前記半導体デバイス。 - 請求項1に記載の半導体デバイスであって、さらに
炭化珪素基板であって、前記半導体制御層は前記炭化珪素基板上にあり、そのため前記半導体制御層が前記炭化珪素基板と前記半導体バッファ層との間に位置する前記炭化珪素基板を含み、前記炭化珪素基板が、約4度よりも大きくない角度だけ[0001]軸から外して切断されるか、あるいは[0001]軸に平行に切断された表面を定義しており、また前記半導体制御層、前記半導体バッファ層および前記半導体メサの結晶構造が、前記炭化珪素基板の結晶構造と揃っている前記炭化珪素基板、
を含む前記半導体デバイス。 - 半導体デバイス作製方法であって、
第1の伝導形を有する半導体バッファ層を形成する工程と、
前記半導体バッファ層の上にあって前記第1の伝導形を有する半導体メサを形成する工程と、
前記半導体メサの基部に隣接して前記半導体バッファ層中で、第2の伝導形を有する電流シフト領域を形成する工程であって、前記第1と第2の伝導形が互いに異なる伝導形である前記電流シフト領域を形成する工程と、
第2の伝導形を有する半導体制御層であって、前記半導体バッファ層は、前記半導体制御層の上にあり、そのため前記半導体バッファ層が前記半導体制御層と前記半導体メサとの間に位置し、前記半導体バッファ層が前記電流シフト領域と前記半導体制御層との間に位置する前記半導体制御層を形成する工程と、
前記第2の伝導形を有する制御コンタクト領域であって、前記制御コンタクト領域が前記半導体制御層に電気的に結合するように前記半導体バッファ層を貫通して延びており、前記制御コンタクト領域が前記電流シフト領域から分離されるため、前記電流シフト領域が前記制御コンタクト領域から電気的に分離される前記制御コンタクト領域を形成する工程と、
を含む前記半導体デバイス作製方法。 - 半導体デバイスであって、
第1の伝導形を有する半導体バッファ層と、
前記半導体バッファ層の上にあって前記第1の伝導形を有する半導体メサであって、前記第1の伝導形の第1のドーパント濃度を有するオーミック・コンタクト領域および前記第1の伝導形の第2のドーパント濃度を有するベース領域を含み、前記第1のドーパント濃度が前記第2のドーパント濃度よりも大きくなっている前記半導体メサと、
前記半導体メサの基部に隣接して前記半導体バッファ層中で、第2の伝導形を有する電流シフト領域であって、前記第1と第2の伝導形が互いに異なる伝導形であり、また前記電流シフト領域が前記半導体バッファ層と前記半導体メサとの間で少なくとも約0.5マイクロメートルの距離だけ広がっている前記電流シフト領域と、
前記半導体メサの表面上の金属電極であって、前記半導体メサは前記金属電極と前記半導体バッファ層との間に位置し、また前記半導体バッファ層に隣接する前記半導体メサの中央部分は、前記金属電極と前記半導体メサに対向する前記半導体バッファ層との間で前記第1の伝導形の連続する電流経路を提供する前記電流シフト領域を含まない、前記金属電極、
を含む前記半導体デバイス。 - 請求項10に記載の半導体デバイスであって、さらに
前記半導体メサに隣接する半導体ステップであって、前記半導体バッファ層の表面に垂直な方向中の前記半導体ステップの厚さは、前記半導体バッファ層の前記表面に垂直な方向中の前記半導体メサの厚さよりも小さい、前記半導体ステップ、
を含む前記半導体デバイス。
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|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |