JP5076407B2 - 半導体装置及びその製造方法 - Google Patents

半導体装置及びその製造方法 Download PDF

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Publication number
JP5076407B2
JP5076407B2 JP2006240324A JP2006240324A JP5076407B2 JP 5076407 B2 JP5076407 B2 JP 5076407B2 JP 2006240324 A JP2006240324 A JP 2006240324A JP 2006240324 A JP2006240324 A JP 2006240324A JP 5076407 B2 JP5076407 B2 JP 5076407B2
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JP
Japan
Prior art keywords
integrated circuit
semiconductor integrated
pattern
alignment
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006240324A
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English (en)
Japanese (ja)
Other versions
JP2008066381A (ja
JP2008066381A5 (enExample
Inventor
之宏 種村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsumi Electric Co Ltd
Original Assignee
Mitsumi Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsumi Electric Co Ltd filed Critical Mitsumi Electric Co Ltd
Priority to JP2006240324A priority Critical patent/JP5076407B2/ja
Priority to TW096128851A priority patent/TW200818292A/zh
Priority to US11/839,078 priority patent/US7781901B2/en
Priority to KR1020070085468A priority patent/KR100904197B1/ko
Publication of JP2008066381A publication Critical patent/JP2008066381A/ja
Publication of JP2008066381A5 publication Critical patent/JP2008066381A5/ja
Application granted granted Critical
Publication of JP5076407B2 publication Critical patent/JP5076407B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/5446—Located in scribe lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laser Beam Processing (AREA)
JP2006240324A 2006-09-05 2006-09-05 半導体装置及びその製造方法 Expired - Fee Related JP5076407B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2006240324A JP5076407B2 (ja) 2006-09-05 2006-09-05 半導体装置及びその製造方法
TW096128851A TW200818292A (en) 2006-09-05 2007-08-06 Semiconductor device and method for manufacturing the same
US11/839,078 US7781901B2 (en) 2006-09-05 2007-08-15 Semiconductor device and processing method of the same
KR1020070085468A KR100904197B1 (ko) 2006-09-05 2007-08-24 반도체 장치 및 그 제조 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006240324A JP5076407B2 (ja) 2006-09-05 2006-09-05 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2008066381A JP2008066381A (ja) 2008-03-21
JP2008066381A5 JP2008066381A5 (enExample) 2009-04-30
JP5076407B2 true JP5076407B2 (ja) 2012-11-21

Family

ID=39288840

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006240324A Expired - Fee Related JP5076407B2 (ja) 2006-09-05 2006-09-05 半導体装置及びその製造方法

Country Status (4)

Country Link
US (1) US7781901B2 (enExample)
JP (1) JP5076407B2 (enExample)
KR (1) KR100904197B1 (enExample)
TW (1) TW200818292A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622312B2 (en) 2018-01-22 2020-04-14 Samsung Electronics Co., Ltd. Semiconductor chips and semiconductor packages including the same

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019911A1 (en) * 2004-07-26 2006-02-23 Sun Microsystems, Inc. Multi-chip module and single-chip module for chips and proximity connectors
JP5263918B2 (ja) * 2007-07-24 2013-08-14 日本電気株式会社 半導体装置及びその製造方法
JP5353035B2 (ja) * 2008-03-17 2013-11-27 富士電機株式会社 半導体装置およびその製造方法
JP5266857B2 (ja) * 2008-04-24 2013-08-21 ミツミ電機株式会社 チップのアライメント方法
JP2010074106A (ja) * 2008-09-22 2010-04-02 Nec Electronics Corp 半導体チップ、半導体ウェーハおよびそのダイシング方法
JP2013157385A (ja) * 2012-01-27 2013-08-15 Semiconductor Components Industries Llc 半導体装置及びその自動外観検査方法
TWI707153B (zh) * 2015-08-10 2020-10-11 美商三角設計公司 具有有角度安裝雷射及一攝影機的積體電路裝置袋中檢測
CN113394193B (zh) * 2020-03-13 2022-03-22 长鑫存储技术有限公司 半导体结构及其形成方法、激光熔丝的熔断方法
KR102507592B1 (ko) * 2021-05-24 2023-03-09 한국과학기술원 Mems 소자의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01243419A (ja) * 1988-03-25 1989-09-28 Hitachi Ltd 位置合わせ方法
JPH1012527A (ja) * 1996-06-26 1998-01-16 Hitachi Ltd 半導体チップおよび半導体製造用レチクル
KR100298193B1 (ko) * 1998-06-16 2001-11-15 박종섭 웨이퍼의수평정렬을위한레티클
KR20000026310A (ko) * 1998-10-20 2000-05-15 김영환 반도체장치
JP3566133B2 (ja) 1999-05-11 2004-09-15 セイコーインスツルメンツ株式会社 半導体装置の製造方法
US6441504B1 (en) * 2000-04-25 2002-08-27 Amkor Technology, Inc. Precision aligned and marked structure
US7053495B2 (en) * 2001-09-17 2006-05-30 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device and method for fabricating the same
US6815838B2 (en) * 2002-02-20 2004-11-09 International Business Machines Corporation Laser alignment target and method
KR100463047B1 (ko) 2002-03-11 2004-12-23 삼성전자주식회사 반도체 장치의 퓨즈 박스 및 그 제조방법
JP2005109145A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 半導体装置
JP4753170B2 (ja) 2004-03-05 2011-08-24 三洋電機株式会社 半導体装置及びその製造方法
JP4673569B2 (ja) * 2004-03-31 2011-04-20 株式会社リコー 半導体装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622312B2 (en) 2018-01-22 2020-04-14 Samsung Electronics Co., Ltd. Semiconductor chips and semiconductor packages including the same

Also Published As

Publication number Publication date
JP2008066381A (ja) 2008-03-21
KR100904197B1 (ko) 2009-06-23
TW200818292A (en) 2008-04-16
US20080251950A1 (en) 2008-10-16
US7781901B2 (en) 2010-08-24
KR20080022041A (ko) 2008-03-10
TWI344175B (enExample) 2011-06-21

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