TW200818292A - Semiconductor device and method for manufacturing the same - Google Patents

Semiconductor device and method for manufacturing the same Download PDF

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Publication number
TW200818292A
TW200818292A TW096128851A TW96128851A TW200818292A TW 200818292 A TW200818292 A TW 200818292A TW 096128851 A TW096128851 A TW 096128851A TW 96128851 A TW96128851 A TW 96128851A TW 200818292 A TW200818292 A TW 200818292A
Authority
TW
Taiwan
Prior art keywords
pattern
semiconductor
integrated circuit
semiconductor integrated
semiconductor device
Prior art date
Application number
TW096128851A
Other languages
English (en)
Chinese (zh)
Other versions
TWI344175B (enExample
Inventor
Yukihiro Tanemura
Original Assignee
Mitsumi Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsumi Electric Co Ltd filed Critical Mitsumi Electric Co Ltd
Publication of TW200818292A publication Critical patent/TW200818292A/zh
Application granted granted Critical
Publication of TWI344175B publication Critical patent/TWI344175B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/04—Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light
    • B23K26/042—Automatically aligning the laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/351—Working by laser beam, e.g. welding, cutting or boring for trimming or tuning of electrical components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
    • H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/585—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries comprising conductive layers or plates or strips or rods or rings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54453—Marks applied to semiconductor devices or parts for use prior to dicing
    • H01L2223/5446—Located in scribe lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing & Machinery (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laser Beam Processing (AREA)
TW096128851A 2006-09-05 2007-08-06 Semiconductor device and method for manufacturing the same TW200818292A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006240324A JP5076407B2 (ja) 2006-09-05 2006-09-05 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
TW200818292A true TW200818292A (en) 2008-04-16
TWI344175B TWI344175B (enExample) 2011-06-21

Family

ID=39288840

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096128851A TW200818292A (en) 2006-09-05 2007-08-06 Semiconductor device and method for manufacturing the same

Country Status (4)

Country Link
US (1) US7781901B2 (enExample)
JP (1) JP5076407B2 (enExample)
KR (1) KR100904197B1 (enExample)
TW (1) TW200818292A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103227123A (zh) * 2012-01-27 2013-07-31 半导体元件工业有限责任公司 半导体装置及其自动外观检查方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006019911A1 (en) * 2004-07-26 2006-02-23 Sun Microsystems, Inc. Multi-chip module and single-chip module for chips and proximity connectors
JP5263918B2 (ja) * 2007-07-24 2013-08-14 日本電気株式会社 半導体装置及びその製造方法
JP5353035B2 (ja) * 2008-03-17 2013-11-27 富士電機株式会社 半導体装置およびその製造方法
JP5266857B2 (ja) * 2008-04-24 2013-08-21 ミツミ電機株式会社 チップのアライメント方法
JP2010074106A (ja) * 2008-09-22 2010-04-02 Nec Electronics Corp 半導体チップ、半導体ウェーハおよびそのダイシング方法
TWI707153B (zh) * 2015-08-10 2020-10-11 美商三角設計公司 具有有角度安裝雷射及一攝影機的積體電路裝置袋中檢測
KR102403730B1 (ko) 2018-01-22 2022-05-30 삼성전자주식회사 반도체 칩 및 이를 포함하는 반도체 패키지
CN113394193B (zh) * 2020-03-13 2022-03-22 长鑫存储技术有限公司 半导体结构及其形成方法、激光熔丝的熔断方法
KR102507592B1 (ko) * 2021-05-24 2023-03-09 한국과학기술원 Mems 소자의 제조 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01243419A (ja) * 1988-03-25 1989-09-28 Hitachi Ltd 位置合わせ方法
JPH1012527A (ja) * 1996-06-26 1998-01-16 Hitachi Ltd 半導体チップおよび半導体製造用レチクル
KR100298193B1 (ko) * 1998-06-16 2001-11-15 박종섭 웨이퍼의수평정렬을위한레티클
KR20000026310A (ko) * 1998-10-20 2000-05-15 김영환 반도체장치
JP3566133B2 (ja) 1999-05-11 2004-09-15 セイコーインスツルメンツ株式会社 半導体装置の製造方法
US6441504B1 (en) * 2000-04-25 2002-08-27 Amkor Technology, Inc. Precision aligned and marked structure
US7053495B2 (en) * 2001-09-17 2006-05-30 Matsushita Electric Industrial Co., Ltd. Semiconductor integrated circuit device and method for fabricating the same
US6815838B2 (en) * 2002-02-20 2004-11-09 International Business Machines Corporation Laser alignment target and method
KR100463047B1 (ko) 2002-03-11 2004-12-23 삼성전자주식회사 반도체 장치의 퓨즈 박스 및 그 제조방법
JP2005109145A (ja) * 2003-09-30 2005-04-21 Toshiba Corp 半導体装置
JP4753170B2 (ja) 2004-03-05 2011-08-24 三洋電機株式会社 半導体装置及びその製造方法
JP4673569B2 (ja) * 2004-03-31 2011-04-20 株式会社リコー 半導体装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103227123A (zh) * 2012-01-27 2013-07-31 半导体元件工业有限责任公司 半导体装置及其自动外观检查方法
CN103227123B (zh) * 2012-01-27 2016-01-20 半导体元件工业有限责任公司 半导体装置及其自动外观检查方法

Also Published As

Publication number Publication date
JP2008066381A (ja) 2008-03-21
JP5076407B2 (ja) 2012-11-21
KR100904197B1 (ko) 2009-06-23
US20080251950A1 (en) 2008-10-16
US7781901B2 (en) 2010-08-24
KR20080022041A (ko) 2008-03-10
TWI344175B (enExample) 2011-06-21

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