JP5047704B2 - 光集積素子 - Google Patents
光集積素子 Download PDFInfo
- Publication number
- JP5047704B2 JP5047704B2 JP2007162514A JP2007162514A JP5047704B2 JP 5047704 B2 JP5047704 B2 JP 5047704B2 JP 2007162514 A JP2007162514 A JP 2007162514A JP 2007162514 A JP2007162514 A JP 2007162514A JP 5047704 B2 JP5047704 B2 JP 5047704B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- optical waveguide
- inp
- optical
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000003287 optical effect Effects 0.000 title claims description 72
- 239000004065 semiconductor Substances 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 31
- 239000000758 substrate Substances 0.000 claims description 30
- 238000005253 cladding Methods 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 16
- 230000001681 protective effect Effects 0.000 claims description 14
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 229910052785 arsenic Inorganic materials 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- 229910052738 indium Inorganic materials 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 230000001902 propagating effect Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 206
- 238000005530 etching Methods 0.000 description 44
- 239000011241 protective layer Substances 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 24
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 20
- 230000015572 biosynthetic process Effects 0.000 description 15
- 239000013078 crystal Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 9
- 239000012212 insulator Substances 0.000 description 8
- 240000004050 Pentaglottis sempervirens Species 0.000 description 7
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 230000007547 defect Effects 0.000 description 6
- 210000001503 joint Anatomy 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 5
- 238000002161 passivation Methods 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 239000000969 carrier Substances 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 230000010355 oscillation Effects 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000004871 chemical beam epitaxy Methods 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
- G02B6/136—Integrated optical circuits characterised by the manufacturing method by etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12035—Materials
- G02B2006/12078—Gallium arsenide or alloys (GaAs, GaAlAs, GaAsP, GaInAs)
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12097—Ridge, rib or the like
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12121—Laser
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12083—Constructional arrangements
- G02B2006/12128—Multiple Quantum Well [MQW]
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12133—Functions
- G02B2006/12142—Modulator
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007162514A JP5047704B2 (ja) | 2007-06-20 | 2007-06-20 | 光集積素子 |
| US11/843,682 US7711229B2 (en) | 2007-06-20 | 2007-08-23 | Optical integrated device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007162514A JP5047704B2 (ja) | 2007-06-20 | 2007-06-20 | 光集積素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009004488A JP2009004488A (ja) | 2009-01-08 |
| JP2009004488A5 JP2009004488A5 (enExample) | 2010-04-30 |
| JP5047704B2 true JP5047704B2 (ja) | 2012-10-10 |
Family
ID=40136586
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007162514A Expired - Fee Related JP5047704B2 (ja) | 2007-06-20 | 2007-06-20 | 光集積素子 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7711229B2 (enExample) |
| JP (1) | JP5047704B2 (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013016648A (ja) * | 2011-07-04 | 2013-01-24 | Sumitomo Electric Ind Ltd | 半導体光集積素子の製造方法 |
| JP5957856B2 (ja) * | 2011-11-21 | 2016-07-27 | 住友電気工業株式会社 | 半導体集積素子 |
| JP5957855B2 (ja) * | 2011-11-21 | 2016-07-27 | 住友電気工業株式会社 | 半導体集積素子 |
| JP6487195B2 (ja) | 2014-12-09 | 2019-03-20 | 日本オクラロ株式会社 | 半導体光集積素子、半導体光集積素子の製造方法及び光モジュール |
| US10784648B2 (en) * | 2017-05-29 | 2020-09-22 | Mitsubishi Electric Corporation | Semiconductor laser with waveguide flanked by conductive layers |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62194691A (ja) * | 1986-02-21 | 1987-08-27 | Kokusai Denshin Denwa Co Ltd <Kdd> | 光導波路領域を有する半導体光集積装置の製造方法 |
| JP2842292B2 (ja) * | 1994-09-16 | 1998-12-24 | 日本電気株式会社 | 半導体光集積装置および製造方法 |
| JPH11103130A (ja) * | 1997-09-29 | 1999-04-13 | Mitsubishi Electric Corp | 半導体光素子，及びその製造方法 |
| JP3941296B2 (ja) * | 1999-09-20 | 2007-07-04 | 三菱電機株式会社 | 変調器と変調器付き半導体レーザ装置並びにその製造方法 |
| JP4058245B2 (ja) | 2001-02-22 | 2008-03-05 | 日本オプネクスト株式会社 | 半導体光集積素子の製造方法 |
| US6503768B2 (en) * | 2001-03-29 | 2003-01-07 | Agere Systems Inc. | Method for monolithic integration of multiple devices on an optoelectronic substrate |
| JP2002324948A (ja) * | 2001-04-25 | 2002-11-08 | Furukawa Electric Co Ltd:The | 半導体レーザ及びレーザモジュール |
| JP2002329921A (ja) | 2001-05-01 | 2002-11-15 | Sumitomo Electric Ind Ltd | 光集積素子の製造方法および光集積素子 |
| SE0200751D0 (sv) * | 2002-03-13 | 2002-03-13 | Optillion Ab | Method for manufacturing a photonic device and photonic device |
| JP4457578B2 (ja) | 2003-05-21 | 2010-04-28 | 住友電気工業株式会社 | 半導体光素子を製造する方法、及び半導体光素子 |
-
2007
- 2007-06-20 JP JP2007162514A patent/JP5047704B2/ja not_active Expired - Fee Related
- 2007-08-23 US US11/843,682 patent/US7711229B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20080317422A1 (en) | 2008-12-25 |
| US7711229B2 (en) | 2010-05-04 |
| JP2009004488A (ja) | 2009-01-08 |
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