JP5046529B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5046529B2
JP5046529B2 JP2006045181A JP2006045181A JP5046529B2 JP 5046529 B2 JP5046529 B2 JP 5046529B2 JP 2006045181 A JP2006045181 A JP 2006045181A JP 2006045181 A JP2006045181 A JP 2006045181A JP 5046529 B2 JP5046529 B2 JP 5046529B2
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JP
Japan
Prior art keywords
film
semiconductor device
substrate
insulating film
transistor
Prior art date
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Expired - Fee Related
Application number
JP2006045181A
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English (en)
Japanese (ja)
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JP2006270077A (ja
JP2006270077A5 (enExample
Inventor
潤 小山
浩二 大力
奨 岡崎
芳隆 守屋
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006045181A priority Critical patent/JP5046529B2/ja
Publication of JP2006270077A publication Critical patent/JP2006270077A/ja
Publication of JP2006270077A5 publication Critical patent/JP2006270077A5/ja
Application granted granted Critical
Publication of JP5046529B2 publication Critical patent/JP5046529B2/ja
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode

Landscapes

  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
JP2006045181A 2005-02-25 2006-02-22 半導体装置 Expired - Fee Related JP5046529B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006045181A JP5046529B2 (ja) 2005-02-25 2006-02-22 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005051867 2005-02-25
JP2005051867 2005-02-25
JP2006045181A JP5046529B2 (ja) 2005-02-25 2006-02-22 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2012122742A Division JP5509259B2 (ja) 2005-02-25 2012-05-30 電子機器

Publications (3)

Publication Number Publication Date
JP2006270077A JP2006270077A (ja) 2006-10-05
JP2006270077A5 JP2006270077A5 (enExample) 2009-04-02
JP5046529B2 true JP5046529B2 (ja) 2012-10-10

Family

ID=37205635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006045181A Expired - Fee Related JP5046529B2 (ja) 2005-02-25 2006-02-22 半導体装置

Country Status (1)

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JP (1) JP5046529B2 (enExample)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5350616B2 (ja) * 2006-09-22 2013-11-27 株式会社半導体エネルギー研究所 半導体装置
US7968382B2 (en) * 2007-02-02 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
US7973316B2 (en) 2007-03-26 2011-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
TWI423519B (zh) 2007-09-04 2014-01-11 Mitsubishi Electric Corp Radio frequency identification tag
US8047442B2 (en) * 2007-12-03 2011-11-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
EP2963675A1 (en) * 2008-03-05 2016-01-06 The Board of Trustees of The University of Illinois Stretchable and foldable electronic devices
CN102067281B (zh) * 2008-04-25 2013-06-12 株式会社半导体能源研究所 半导体器件及其制造方法
JP5679626B2 (ja) * 2008-07-07 2015-03-04 セイコーインスツル株式会社 半導体装置
TW202404099A (zh) * 2008-11-07 2024-01-16 日商半導體能源研究所股份有限公司 半導體裝置和其製造方法
US8796700B2 (en) * 2008-11-17 2014-08-05 Global Oled Technology Llc Emissive device with chiplets
CN104597651B (zh) 2009-05-02 2017-12-05 株式会社半导体能源研究所 显示设备
US8766269B2 (en) 2009-07-02 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device, lighting device, and electronic device
KR100978387B1 (ko) 2010-03-23 2010-08-26 한국기계연구원 박막 트랜지스터 패널 및 그 제조 방법
WO2012164882A1 (ja) * 2011-05-31 2012-12-06 シャープ株式会社 表示装置用基板およびそれを備えた表示装置
KR101174834B1 (ko) 2012-04-05 2012-08-17 주식회사 다보씨앤엠 공정필름을 이용한 필름형 디스플레이 기판의 제조방법 및 이에 사용되는 필름형 디스플레이 기판 제조용 공정필름
KR102257119B1 (ko) * 2013-06-17 2021-05-31 삼성디스플레이 주식회사 어레이 기판 및 이를 포함하는 유기 발광 표시 장치
US9472507B2 (en) 2013-06-17 2016-10-18 Samsung Display Co., Ltd. Array substrate and organic light-emitting display including the same
TWI713943B (zh) 2013-09-12 2020-12-21 日商新力股份有限公司 顯示裝置及電子機器
TWI654736B (zh) * 2014-02-14 2019-03-21 日商半導體能源研究所股份有限公司 發光裝置
KR102799986B1 (ko) * 2014-11-28 2025-04-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 모듈, 및 전자 기기
JP6683503B2 (ja) * 2015-03-03 2020-04-22 株式会社半導体エネルギー研究所 半導体装置
WO2016204121A1 (ja) * 2015-06-18 2016-12-22 シャープ株式会社 フレキシブル電子デバイス及びフレキシブル電子デバイスの製造方法
JP6624917B2 (ja) * 2015-12-14 2019-12-25 株式会社ジャパンディスプレイ 表示装置
CN107808892B (zh) * 2016-09-08 2020-06-26 群创光电股份有限公司 显示设备
US10217957B2 (en) 2016-10-13 2019-02-26 Sharp Kabushiki Kaisha Organic EL display device and method of manufacturing organic EL display device
CN110402497B (zh) * 2017-03-29 2024-08-06 株式会社半导体能源研究所 半导体装置、半导体装置的制造方法
CN111788697B (zh) * 2018-03-06 2024-06-28 株式会社半导体能源研究所 半导体装置
JP2020035952A (ja) * 2018-08-31 2020-03-05 国立大学法人名古屋大学 電子デバイス
JP7467976B2 (ja) * 2019-03-04 2024-04-16 東レ株式会社 薄膜トランジスタ、その製造方法、ならびにそれを備えた半導体装置
WO2021084369A1 (ja) * 2019-11-01 2021-05-06 株式会社半導体エネルギー研究所 半導体装置
US20240397770A1 (en) * 2021-09-30 2024-11-28 Semiconductor Energy Laboratory Co., Ltd. Display apparatus

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02263465A (ja) * 1988-11-05 1990-10-26 Mitsubishi Electric Corp 積層型半導体装置およびその製造方法
JP3662909B2 (ja) * 1990-12-25 2005-06-22 日本碍子株式会社 ウエハー吸着加熱装置及びウエハー吸着装置
JPH08222732A (ja) * 1995-02-15 1996-08-30 Hitachi Ltd 絶縁ゲート型半導体装置
JP3248388B2 (ja) * 1995-03-30 2002-01-21 富士電機株式会社 半導体装置およびその製造方法
JP2000183149A (ja) * 1998-12-10 2000-06-30 Sanyo Electric Co Ltd 半導体装置
JP4651777B2 (ja) * 1999-06-02 2011-03-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4748859B2 (ja) * 2000-01-17 2011-08-17 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2001320057A (ja) * 2000-05-11 2001-11-16 Toshiba Corp 薄膜トランジスタ及び薄膜トランジスタの製造方法
ATE430377T1 (de) * 2001-02-16 2009-05-15 Ignis Innovation Inc Flexible anzeigevorrichtung
GB0108309D0 (en) * 2001-04-03 2001-05-23 Koninkl Philips Electronics Nv Matrix array devices with flexible substrates
JP3648466B2 (ja) * 2001-06-29 2005-05-18 株式会社東芝 電界効果トランジスタ、半導体基板、電界効果トランジスタの製造方法及び半導体基板の製造方法
JP2003197364A (ja) * 2001-12-27 2003-07-11 Goyo Paper Working Co Ltd 発光効率の高いｅｌ発光装置
JP4566578B2 (ja) * 2003-02-24 2010-10-20 株式会社半導体エネルギー研究所 薄膜集積回路の作製方法
JP2004342960A (ja) * 2003-05-19 2004-12-02 Sony Corp 半導体装置および半導体装置の製造方法

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Publication number Publication date
JP2006270077A (ja) 2006-10-05

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