JP6624917B2 - 表示装置 - Google Patents
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- JP6624917B2 JP6624917B2 JP2015243151A JP2015243151A JP6624917B2 JP 6624917 B2 JP6624917 B2 JP 6624917B2 JP 2015243151 A JP2015243151 A JP 2015243151A JP 2015243151 A JP2015243151 A JP 2015243151A JP 6624917 B2 JP6624917 B2 JP 6624917B2
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- 239000000758 substrate Substances 0.000 claims description 54
- 239000011159 matrix material Substances 0.000 claims description 8
- 238000005192 partition Methods 0.000 claims description 7
- 238000007789 sealing Methods 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 238000009751 slip forming Methods 0.000 claims description 2
- 230000000149 penetrating effect Effects 0.000 claims 3
- 239000010410 layer Substances 0.000 description 127
- 239000011229 interlayer Substances 0.000 description 9
- 238000005452 bending Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229910017105 AlOxNy Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000565 sealant Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- -1 for example Polymers 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
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- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
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- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3266—Details of drivers for scan electrodes
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- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1216—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being capacitors
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
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- H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
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- H10K71/821—Patterning of a layer by embossing, e.g. stamping to form trenches in an insulating layer
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- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
- H10K77/111—Flexible substrates
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2300/00—Aspects of the constitution of display devices
- G09G2300/08—Active matrix structure, i.e. with use of active elements, inclusive of non-linear two terminal elements, in the pixels together with light emitting or modulating elements
- G09G2300/0809—Several active elements per pixel in active matrix panels
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2310/00—Command of the display device
- G09G2310/02—Addressing, scanning or driving the display screen or processing steps related thereto
- G09G2310/0202—Addressing of scan or signal lines
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K2102/301—Details of OLEDs
- H10K2102/311—Flexible OLED
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
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Description
[構成]
本実施形態に係る表示装置100の構成を、図1を参照して説明する。図1は、本実施形態に係る表示装置100の構成を示す斜視図である。本実施形態に係る表示装置100は、第1基板102と、第2基板104と、複数の画素108と、シール材110と、端子領域114と、接続端子116とを有している。
図4を参照し、本実施形態に係る表示装置200の構成について詳細に説明する。図4は、本実施形態に係る表示装置200の構成を示す断面図である。
図5を参照し、本実施形態に係る表示装置300の構成について詳細に説明する。図5は、本実施形態に係る表示装置300の構成を示す断面図である。
図6を参照し、本実施形態に係る表示装置400の構成について詳細に説明する。図6は、本実施形態に係る表示装置400の構成を示す断面図である。
図7を参照し、本実施形態に係る表示装置500の構成について詳細に説明する。図7は、本実施形態に係る表示装置500の構成を示す断面図である。
図8を参照し、本実施形態に係る表示装置600の構成について詳細に説明する。図8は、本実施形態に係る表示装置600の構成を示す断面図である。
図9を参照し、本実施形態に係る表示装置700の構成について詳細に説明する。図9は、本実施形態に係る表示装置700の構成を示す断面図である。
図10を参照し、本実施形態に係る表示装置800の構成について詳細に説明する。図10は、本実施形態に係る表示装置800の構成を示す断面図である。
図11を参照し、本実施形態に係る表示装置900の構成について詳細に説明する。図11は、本実施形態に係る表示装置900の構成を示す断面図である。
図12を参照し、本実施形態に係る表示装置1000の構成について詳細に説明する。図12は、本実施形態に係る表示装置1000の構成を示す断面図である。
図13を参照し、本実施形態に係る表示装置1100の構成について詳細に説明する。図13は、本実施形態に係る表示装置1100の構成を示す断面図である。
図14を参照し、本実施形態に係る表示装置1200の構成について説明する。図14(a)は、本実施形態に係る表示装置1200の概略構成を示す斜視図である。
図14(b)は、本実施形態の変形例に係る表示装置1250の概略構成を示す斜視図である。
Claims (11)
- 可撓性を有し、互いに交差する第1方向及び第2方向に、行列状に配列された複数の画素を有する第1基板と、
前記第1基板上に配置され、前記複数の画素の各々に、少なくとも一つのトランジスタが配置されたトランジスタ層と、
前記第1方向に延び、前記複数の画素の内、前記第1方向に配列された複数の画素毎に接続された複数の第1配線群と、
前記第2方向に延び、前記複数の画素の内、前記第2方向に配列された複数の画素毎に接続された複数の第2配線群とを備え、
前記トランジスタ層は、少なくとも前記第1方向に隣接する前記トランジスタを区画し、前記トランジスタ層の無機絶縁膜を貫通し、前記第2方向に延びる複数の開口部を有し、
前記トランジスタ層の前記無機絶縁膜は、前記第2方向に前記複数の画素にわたって連続的に形成され、
前記複数の第1配線群に含まれる第1配線の各々は、断面視において、前記第1方向に沿って波型状に設けられることを特徴とする表示装置。 - 可撓性を有し、互いに交差する第1方向及び第2方向に、行列状に配列された複数の画素を有する第1基板と、
前記第1基板上に配置され、前記複数の画素の各々に、少なくとも一つのトランジスタが配置されたトランジスタ層と、
前記第1方向に延び、前記複数の画素の内、前記第1方向に配列された複数の画素毎に接続された複数の第1配線群と、
前記第2方向に延び、前記複数の画素の内、前記第2方向に配列された複数の画素毎に接続された複数の第2配線群とを備え、
前記トランジスタ層は、少なくとも前記第1方向に隣接する前記トランジスタを区画し、前記トランジスタ層の無機絶縁膜を貫通し、前記第2方向に延びる複数の開口部を有し、
前記トランジスタ層の前記無機絶縁膜は、前記第2方向に前記複数の画素にわたって連続的に形成され、
前記複数の第1配線群は、前記複数の開口部を有するトランジスタ層の表面に沿って配置され、
前記トランジスタ層を覆い、前記トランジスタ層及び前記複数の第1配線群の間に配置され、無機絶縁層を含むカバー層を更に備えた表示装置。 - 可撓性を有し、互いに交差する第1方向及び第2方向に、行列状に配列された複数の画素を有する第1基板と、
前記第1基板上に配置され、前記複数の画素の各々に、少なくとも一つのトランジスタが配置されたトランジスタ層と、
前記第1方向に延び、前記複数の画素の内、前記第1方向に配列された複数の画素毎に接続された複数の第1配線群と、
前記第2方向に延び、前記複数の画素の内、前記第2方向に配列された複数の画素毎に接続された複数の第2配線群とを備え、
前記トランジスタ層は、少なくとも前記第1方向に隣接する前記トランジスタを区画し、前記トランジスタ層の無機絶縁膜を貫通し、前記第2方向に延びる複数の開口部を有し、
前記トランジスタ層の前記無機絶縁膜は、前記第2方向に前記複数の画素にわたって連続的に形成され、
前記複数の第1配線群は、前記複数の開口部を有するトランジスタ層の表面に沿って配置され、
前記トランジスタ層を覆い、前記複数の第1配線群の上に配置され、無機絶縁層を含むカバー層を更に備えた表示装置。 - 可撓性を有し、互いに交差する第1方向及び第2方向に、行列状に配列された複数の画素を有する第1基板と、
前記第1基板上に配置され、前記複数の画素の各々に、少なくとも一つのトランジスタが配置されたトランジスタ層と、
前記第1方向に延び、前記複数の画素の内、前記第1方向に配列された複数の画素毎に接続された複数の第1配線群と、
前記第2方向に延び、前記複数の画素の内、前記第2方向に配列された複数の画素毎に接続された複数の第2配線群とを備え、
前記トランジスタ層は、少なくとも前記第1方向に隣接する前記トランジスタを区画し、前記トランジスタ層の無機絶縁膜を貫通し、前記第2方向に延びる複数の開口部を有し、
前記トランジスタ層の前記無機絶縁膜は、前記第2方向に前記複数の画素にわたって連続的に形成され、
前記トランジスタ層を覆い、前記複数の第1配線群の下に配置され、表面に凹凸形状を有する凹凸層を更に備えた表示装置。 - 前記第1配線群は、映像信号線を含み、
前記第2配線群は、走査信号線を含むことを特徴とする請求項1乃至4の何れか一項に記載の表示装置。 - 前記第1配線群は、走査信号線を含み、
前記第2配線群は、映像信号線を含むことを特徴とする請求項1乃至4の何れか一項に記載の表示装置。 - 前記第1基板及び前記トランジスタ層の間に配置される下地層を更に備え、
前記複数の開口部それぞれは、少なくとも前記第1方向に前記下地層を区画し、
前記下地層は前記第2方向に前記複数の画素に渡って連続的に形成されていることを特徴とする請求項1乃至4の何れか一項に記載の表示装置。 - 前記複数の第1配線群は、前記複数の開口部を有するトランジスタ層の表面に沿って配置されることを特徴とする請求項1に記載の表示装置。
- 前記複数の画素を覆い、有機絶縁層及び無機絶縁層が交互に積層された封止層を更に備えた請求項1乃至4の何れか一項に記載の表示装置。
- 前記第1方向に延び、前記複数の画素の内、前記第1方向に配列された複数の画素毎に接続された複数の第1配線群と、
前記第2方向に延び、前記複数の画素の内、前記第2方向に配列された複数の画素毎に接続された複数の第2配線群とを有し、
前記第1基板の厚さ方向の起伏に関して、前記第1配線群の方が前記第2配線群よりも大きい請求項1乃至4の何れか一項に記載の表示装置。 - 表示領域をそれぞれ有する平坦部と折り曲げ部を有し、
前記折り曲げ部は前記第2方向よりも前記第1方向により折り曲げ可能となっている請求項1乃至4の何れか一項に記載の表示装置。
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