JP5044146B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5044146B2 JP5044146B2 JP2006153203A JP2006153203A JP5044146B2 JP 5044146 B2 JP5044146 B2 JP 5044146B2 JP 2006153203 A JP2006153203 A JP 2006153203A JP 2006153203 A JP2006153203 A JP 2006153203A JP 5044146 B2 JP5044146 B2 JP 5044146B2
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- 239000004065 semiconductor Substances 0.000 title claims description 47
- 239000000758 substrate Substances 0.000 claims description 21
- 238000002955 isolation Methods 0.000 claims description 18
- 239000012535 impurity Substances 0.000 claims description 13
- 238000000605 extraction Methods 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 9
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 85
- 230000015556 catabolic process Effects 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
- H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out
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- Engineering & Computer Science (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
Description
すなわち、本発明の半導体装置は、第1導電型の半導体基板上にMOSトランジスタ及び抵抗を備える半導体装置であって、前記MOSトランジスタは前記半導体基板の表面に形成された第2導電型のウェル層内に形成された第1導電型の低濃度のドレイン領域と、この低濃度のドレイン領域上に形成された高濃度のドレイン領域と、前記ウェル層上であって前記低濃度のドレイン領域を囲むようにして環状に形成されたゲート電極と、前記ゲート電極を囲うように形成された第1導電型のソース領域とを備え、前記抵抗は、前記MOSトランジスタが形成されたウェル層と同一のウェル層内に形成され、前記ウェル層の表面に形成された第1導電型の抵抗層と、前記ウェル層上であって前記抵抗層を囲むようにして環状に形成された導電層と、前記抵抗層の表面に形成された第1導電型の一対の電極取り出し層と、該一対の電極取り出し層の間に形成された第1導電型の不純物層とを備え、前記ウェル層上に形成された素子分離絶縁膜で囲まれた一つの領域内に前記MOSトランジスタと前記抵抗の両者が形成されており、前記低濃度のドレイン領域及び前記抵抗層は、同一のイオン注入工程で形成されたことを特徴とする。
11 ウェル領域 12 ゲート電極 13 低濃度ドレイン領域
14 高濃度ドレイン領域 15 高濃度ソース領域 16 コンタクト部
17 配線層 18 配線層 20 抵抗層 21 電極取出し層
22 不純物層 23 コンタクト部 24 コンタクト部 25 配線層
26 配線層 30 導電層 31 層間絶縁膜 32 素子分離絶縁膜
100 Pチャネル型MOSトランジスタ 101 負電圧供給端子
102 プルダウン抵抗 105 半導体基板 106 ウェル領域
107 素子分離絶縁膜 108 ゲート電極 109 低濃度ドレイン領域
110 高濃度ドレイン領域 111 高濃度ソース領域 112 層間絶縁膜
113 コンタクト部 114 配線層 115 配線層
120 ウェル領域 121 素子分離絶縁膜 122 抵抗層
123 電極取出し層 124 不純物層 125 コンタクト部
126 コンタクト部 127 配線層 128 配線層 VDD 電源電圧
DRV ドライバ信号 Out 出力端子
Claims (2)
- 第1導電型の半導体基板上にMOSトランジスタ及び抵抗を備える半導体装置であって、前記MOSトランジスタは前記半導体基板の表面に形成された第2導電型のウェル層内に形成された第1導電型の低濃度ドレイン領域と、この低濃度ドレイン領域の表面に形成された高濃度ドレイン領域と、前記ウェル層上であって前記低濃度ドレイン領域を囲むようにして環状に形成されたゲート電極と、前記ゲート電極を囲うように形成された第1導電型のソース領域とを備え、
前記抵抗は、前記MOSトランジスタが形成されたウェル層と同一のウェル層内に形成され、前記ウェル層の表面に形成された第1導電型の抵抗層と、前記ウェル層上であって前記抵抗層を囲むようにして環状に形成された導電層と、前記抵抗層の表面に形成された第1導電型の一対の電極取り出し層と、該一対の電極取り出し層の間に形成された第1導電型の不純物層とを備え、
前記ウェル層上に形成された素子分離絶縁膜で囲まれた一つの領域内に前記MOSトランジスタと前記抵抗の両者が形成されており、
前記低濃度ドレイン領域及び前記抵抗層は、同一のイオン注入工程で形成されたことを特徴とする半導体装置。 - 前記MOSトランジスタは、互い離間された複数の低濃度ドレイン領域と、各低濃度ドレイン領域をそれぞれ囲むようにして環状に形成された複数のゲート電極を備え、前記抵抗層と隣り合う低濃度ドレイン層のスペースは、互いに隣り合う複数の低濃度ドレイン領域間のスペースと同じであることを特徴とする請求項1に記載の半導体装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006153203A JP5044146B2 (ja) | 2006-06-01 | 2006-06-01 | 半導体装置 |
CNA2007101266426A CN101083266A (zh) | 2006-06-01 | 2007-05-29 | 半导体装置 |
US11/806,462 US7655992B2 (en) | 2006-06-01 | 2007-05-31 | Semiconductor device |
KR1020070053288A KR100901063B1 (ko) | 2006-06-01 | 2007-05-31 | 반도체 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006153203A JP5044146B2 (ja) | 2006-06-01 | 2006-06-01 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007324381A JP2007324381A (ja) | 2007-12-13 |
JP5044146B2 true JP5044146B2 (ja) | 2012-10-10 |
Family
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Application Number | Title | Priority Date | Filing Date |
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JP2006153203A Active JP5044146B2 (ja) | 2006-06-01 | 2006-06-01 | 半導体装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US7655992B2 (ja) |
JP (1) | JP5044146B2 (ja) |
KR (1) | KR100901063B1 (ja) |
CN (1) | CN101083266A (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004019345B4 (de) * | 2004-04-21 | 2007-02-08 | Austriamicrosystems Ag | Ausgangsstufenanordnung |
JP5239930B2 (ja) * | 2009-02-19 | 2013-07-17 | セイコーエプソン株式会社 | 圧力調整弁およびこれを備えた液滴吐出装置 |
WO2011161748A1 (ja) | 2010-06-21 | 2011-12-29 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
KR20180098900A (ko) | 2017-02-27 | 2018-09-05 | 연세대학교 산학협력단 | 전이금속 칼코게나이드 채널과 그래핀 전극을 이용한 다중 게이트 구조의 cmos 인버터 디바이스 |
US10796942B2 (en) | 2018-08-20 | 2020-10-06 | Stmicroelectronics S.R.L. | Semiconductor structure with partially embedded insulation region |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5452483A (en) * | 1977-10-03 | 1979-04-25 | Seiko Epson Corp | Semiconductor integrated circuit |
JPH061816B2 (ja) * | 1983-09-30 | 1994-01-05 | 日本電気株式会社 | 半導体装置の製造方法 |
JPS6195562A (ja) * | 1984-10-17 | 1986-05-14 | Hitachi Ltd | 半導体装置の製造方法 |
JP2907435B2 (ja) * | 1989-02-17 | 1999-06-21 | 松下電子工業株式会社 | Mis型トランジスタ |
JPH03132068A (ja) * | 1989-10-18 | 1991-06-05 | Sony Corp | 半導体装置 |
JPH05175228A (ja) * | 1991-12-24 | 1993-07-13 | Toshiba Corp | 半導体装置 |
JPH05259272A (ja) * | 1992-03-13 | 1993-10-08 | Mitsubishi Electric Corp | 半導体装置 |
JPH0926758A (ja) | 1995-07-11 | 1997-01-28 | Sanyo Electric Co Ltd | 蛍光表示管駆動回路 |
JPH10242459A (ja) * | 1997-02-25 | 1998-09-11 | Mitsubishi Electric Corp | 半導体集積回路装置用拡散抵抗 |
JPH11121631A (ja) * | 1997-10-14 | 1999-04-30 | Fuji Electric Co Ltd | 半導体装置およびその製造方法 |
JP3883699B2 (ja) * | 1997-11-20 | 2007-02-21 | エスアイアイ・ナノテクノロジー株式会社 | 自己検知型spmプローブ及びspm装置 |
JP2000196019A (ja) * | 1998-12-28 | 2000-07-14 | Toshiba Microelectronics Corp | 半導体装置及びその製造方法 |
JP2003224267A (ja) * | 2002-01-31 | 2003-08-08 | Sanyo Electric Co Ltd | 半導体装置 |
JP4409983B2 (ja) * | 2004-02-13 | 2010-02-03 | シャープ株式会社 | 半導体装置及びその製造方法 |
-
2006
- 2006-06-01 JP JP2006153203A patent/JP5044146B2/ja active Active
-
2007
- 2007-05-29 CN CNA2007101266426A patent/CN101083266A/zh active Pending
- 2007-05-31 KR KR1020070053288A patent/KR100901063B1/ko not_active IP Right Cessation
- 2007-05-31 US US11/806,462 patent/US7655992B2/en active Active
Also Published As
Publication number | Publication date |
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JP2007324381A (ja) | 2007-12-13 |
KR20070115746A (ko) | 2007-12-06 |
US20070278594A1 (en) | 2007-12-06 |
US7655992B2 (en) | 2010-02-02 |
CN101083266A (zh) | 2007-12-05 |
KR100901063B1 (ko) | 2009-06-04 |
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