JP5033319B2 - プラズマ強化化学気相成長装置 - Google Patents

プラズマ強化化学気相成長装置 Download PDF

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Publication number
JP5033319B2
JP5033319B2 JP2005274384A JP2005274384A JP5033319B2 JP 5033319 B2 JP5033319 B2 JP 5033319B2 JP 2005274384 A JP2005274384 A JP 2005274384A JP 2005274384 A JP2005274384 A JP 2005274384A JP 5033319 B2 JP5033319 B2 JP 5033319B2
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Japan
Prior art keywords
substrate support
high frequency
substrate
assembly
vapor deposition
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Expired - Fee Related
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JP2005274384A
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English (en)
Japanese (ja)
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JP2006104575A (ja
JP2006104575A5 (enExample
Inventor
エム． ホワイト ジョン
エル． タイナー ロビン
スー パク ビョン
ティー． ブロニガン ウェンデル
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2006104575A5 publication Critical patent/JP2006104575A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
JP2005274384A 2004-09-21 2005-09-21 プラズマ強化化学気相成長装置 Expired - Fee Related JP5033319B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/946403 2004-09-21
US10/946,403 US7534301B2 (en) 2004-09-21 2004-09-21 RF grounding of cathode in process chamber

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009112186A Division JP5037560B2 (ja) 2004-09-21 2009-05-01 プロセスチャンバのカソードの高周波接地

Publications (3)

Publication Number Publication Date
JP2006104575A JP2006104575A (ja) 2006-04-20
JP2006104575A5 JP2006104575A5 (enExample) 2009-05-14
JP5033319B2 true JP5033319B2 (ja) 2012-09-26

Family

ID=36072681

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2005274384A Expired - Fee Related JP5033319B2 (ja) 2004-09-21 2005-09-21 プラズマ強化化学気相成長装置
JP2009112186A Expired - Fee Related JP5037560B2 (ja) 2004-09-21 2009-05-01 プロセスチャンバのカソードの高周波接地

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009112186A Expired - Fee Related JP5037560B2 (ja) 2004-09-21 2009-05-01 プロセスチャンバのカソードの高周波接地

Country Status (5)

Country Link
US (2) US7534301B2 (enExample)
JP (2) JP5033319B2 (enExample)
KR (2) KR101441892B1 (enExample)
CN (2) CN102324367B (enExample)
TW (2) TWI314759B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10242429B2 (en) 2005-04-06 2019-03-26 Sony Corporation Reproducing device, setting changing method, and setting changing device

Families Citing this family (66)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
WO2008079742A2 (en) * 2006-12-20 2008-07-03 Applied Materials, Inc. Prevention of film deposition on pecvd process chamber wall
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
US7968469B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
US7959735B2 (en) * 2007-02-08 2011-06-14 Applied Materials, Inc. Susceptor with insulative inserts
KR101374583B1 (ko) * 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ 셔터
JP4887202B2 (ja) * 2007-04-17 2012-02-29 東京エレクトロン株式会社 プラズマ処理装置及び高周波電流の短絡回路
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US8597428B2 (en) * 2007-12-12 2013-12-03 Lam Research Corporation Vacuum sealing radio frequency (RF) and low frequency conducting actuator
KR100929153B1 (ko) * 2007-12-27 2009-12-01 세메스 주식회사 전원 전송부재 및 이의 제조 방법
US20090255798A1 (en) * 2008-04-12 2009-10-15 Gaku Furuta Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber
WO2010042860A2 (en) * 2008-10-09 2010-04-15 Applied Materials, Inc. Rf return path for large plasma processing chamber
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8627783B2 (en) * 2008-12-19 2014-01-14 Lam Research Corporation Combined wafer area pressure control and plasma confinement assembly
JP2010161316A (ja) * 2009-01-09 2010-07-22 Ulvac Japan Ltd プラズマ処理装置
CN102308675B (zh) * 2009-02-04 2016-01-13 应用材料公司 用于等离子体工艺的接地回流路径
US9758869B2 (en) * 2009-05-13 2017-09-12 Applied Materials, Inc. Anodized showerhead
KR101081744B1 (ko) * 2009-08-17 2011-11-09 주성엔지니어링(주) 기판처리장치
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Ｒｆ­전력공급 샤워헤드를 위한 편심 접지 복귀
KR101127757B1 (ko) * 2009-12-02 2012-03-23 주식회사 테스 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버
KR101039524B1 (ko) 2010-02-19 2011-06-09 주성엔지니어링(주) 플라즈마 처리 장치
TW201145440A (en) * 2010-06-09 2011-12-16 Global Material Science Co Ltd Shadow frame and manufacturing method thereof
KR101103450B1 (ko) * 2010-07-27 2012-01-09 주식회사 케이씨텍 기판 도금 장치
TW201324818A (zh) * 2011-10-21 2013-06-16 Applied Materials Inc 製造矽異質接面太陽能電池之方法與設備
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
CN104024477B (zh) * 2011-11-23 2016-05-18 朗姆研究公司 多区域气体注入上电极系统
WO2013078434A1 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap
US20130160948A1 (en) * 2011-12-23 2013-06-27 Lam Research Corporation Plasma Processing Devices With Corrosion Resistant Components
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9340866B2 (en) 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9633823B2 (en) * 2013-03-14 2017-04-25 Cardinal Cg Company Plasma emission monitor and process gas delivery system
WO2015116245A1 (en) * 2014-01-30 2015-08-06 Applied Materials, Inc. Gas confiner assembly for eliminating shadow frame
CN104294206B (zh) * 2014-10-09 2016-05-04 沈阳富创精密设备有限公司 一种半导体装备用抗高温蠕变接地基片的制备方法
US10134615B2 (en) * 2015-02-13 2018-11-20 Applied Materials, Inc. Substrate support with improved RF return
US20160348233A1 (en) * 2015-05-29 2016-12-01 Applied Materials, Inc. Grounding of conductive mask for deposition processes
US20170365449A1 (en) * 2016-06-21 2017-12-21 Applied Materials, Inc. Rf return strap shielding cover
KR102173212B1 (ko) * 2016-06-24 2020-11-03 주식회사 원익아이피에스 기판처리장치
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
KR102399343B1 (ko) * 2017-05-29 2022-05-19 삼성디스플레이 주식회사 화학기상 증착장치
WO2019023636A1 (en) 2017-07-28 2019-01-31 Tokyo Electron Limited SYSTEM AND METHOD FOR DEPOSITING THE BACK OF A SUBSTRATE
TWI704252B (zh) * 2017-09-04 2020-09-11 台灣積體電路製造股份有限公司 升舉裝置、化學氣相沉積裝置及方法
CN108103473B (zh) * 2017-12-18 2020-04-24 沈阳拓荆科技有限公司 用于半导体处理腔体的遮蔽装置及其使用方法
KR102523798B1 (ko) 2018-02-09 2023-04-21 주성엔지니어링(주) 마스크 홀더 및 이를 포함하는 기판처리장치
US11434569B2 (en) * 2018-05-25 2022-09-06 Applied Materials, Inc. Ground path systems for providing a shorter and symmetrical ground path
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326382B (zh) * 2018-12-17 2023-07-18 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
US11270870B2 (en) * 2019-04-02 2022-03-08 Applied Materials, Inc. Processing equipment component plating
US20220236007A1 (en) * 2019-06-07 2022-07-28 Pyrogenesis Canada Inc. Non-water cooled consumable electrode vacuum arc furnace for continuous process
JP7733638B2 (ja) * 2019-08-02 2025-09-03 アプライド マテリアルズ インコーポレイテッド 高周波電力リターン経路
CN112447475B (zh) * 2019-09-05 2023-09-29 中微半导体设备(上海)股份有限公司 一种具有柔性电介质薄片的等离子体处理装置
US12354847B2 (en) * 2020-03-12 2025-07-08 Applied Materials, Inc. Methods and apparatus for conductance liners in semiconductor process chambers
JP7407645B2 (ja) * 2020-04-03 2024-01-04 東京エレクトロン株式会社 プラズマ処理装置
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
US11887884B2 (en) * 2020-10-16 2024-01-30 Applied Materials, Inc. Pre-loaded bowl mechanism for providing a symmetric radio frequency return path
US11664247B2 (en) * 2020-10-16 2023-05-30 Applied Materials, Inc. Dynamic interface for providing a symmetric radio frequency return path
JP7610034B2 (ja) * 2021-04-01 2025-01-07 アプライド マテリアルズ インコーポレイテッド プラズマを使用した薄膜形成のグランドリターン
US12378669B2 (en) 2022-01-28 2025-08-05 Applied Materials, Inc. Ground return for thin film formation using plasma

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998178A (en) 1990-06-18 1991-03-05 Minnesota Mining And Manufacturing Company Adjustable, conductive body strap
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
KR100276093B1 (ko) * 1992-10-19 2000-12-15 히가시 데쓰로 플라스마 에칭방법
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5522937A (en) 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5790365A (en) * 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
US6024044A (en) 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
JP3710081B2 (ja) * 1997-11-30 2005-10-26 アルプス電気株式会社 プラズマ処理装置
US6063441A (en) 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US6773562B1 (en) 1998-02-20 2004-08-10 Applied Materials, Inc. Shadow frame for substrate processing
US6197438B1 (en) * 1998-03-11 2001-03-06 Roger Faulkner Foodware with ceramic food contacting surface
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6162332A (en) * 1998-05-07 2000-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for preventing arcing in sputter chamber
US6183564B1 (en) * 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6558504B1 (en) 1998-12-21 2003-05-06 Research Triangle Institute Plasma processing system and method
US6779481B2 (en) * 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
TW570856B (en) * 2001-01-18 2004-01-11 Fujitsu Ltd Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system
KR100738837B1 (ko) * 2001-02-13 2007-07-12 엘지.필립스 엘시디 주식회사 플라즈마화학증착 장치
US6417626B1 (en) * 2001-03-01 2002-07-09 Tokyo Electron Limited Immersed inductively—coupled plasma source
US20050189074A1 (en) * 2002-11-08 2005-09-01 Tokyo Electron Limited Gas processing apparatus and method and computer storage medium storing program for controlling same
US6527912B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Stacked RF excitation coil for inductive plasma processor
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US7100532B2 (en) 2001-10-09 2006-09-05 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US7060545B1 (en) 2002-10-31 2006-06-13 Micrel, Inc. Method of making truncated power enhanced drift lateral DMOS device with ground strap
US6933442B2 (en) 2003-02-12 2005-08-23 Senior Industries, Inc. Methods and apparatus to secure a ground strap assembly to an electrically conductive member
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7083702B2 (en) 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10242429B2 (en) 2005-04-06 2019-03-26 Sony Corporation Reproducing device, setting changing method, and setting changing device

Also Published As

Publication number Publication date
JP2006104575A (ja) 2006-04-20
KR101441892B1 (ko) 2014-09-19
KR20060051437A (ko) 2006-05-19
TWI314759B (en) 2009-09-11
US7534301B2 (en) 2009-05-19
CN1752281A (zh) 2006-03-29
TWI392017B (zh) 2013-04-01
KR101185908B1 (ko) 2012-09-25
JP5037560B2 (ja) 2012-09-26
US20090178617A1 (en) 2009-07-16
CN1752281B (zh) 2011-08-24
JP2009280913A (ja) 2009-12-03
KR20090057202A (ko) 2009-06-04
US20060060302A1 (en) 2006-03-23
CN102324367A (zh) 2012-01-18
TW200611333A (en) 2006-04-01
CN102324367B (zh) 2016-02-03
TW201001533A (en) 2010-01-01

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