CN102324367B - 制程处理室中阴极的射频接地 - Google Patents

制程处理室中阴极的射频接地 Download PDF

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Publication number
CN102324367B
CN102324367B CN201110192596.6A CN201110192596A CN102324367B CN 102324367 B CN102324367 B CN 102324367B CN 201110192596 A CN201110192596 A CN 201110192596A CN 102324367 B CN102324367 B CN 102324367B
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CN
China
Prior art keywords
substrate support
equipment
assembly
fabrication process
locular wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN201110192596.6A
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English (en)
Chinese (zh)
Other versions
CN102324367A (zh
Inventor
约翰·M·怀特
罗宾·L·蒂纳
朴范珠
温德尔·T·布伦尼格
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Applied Materials Inc
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Applied Materials Inc
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
CN201110192596.6A 2004-09-21 2005-09-09 制程处理室中阴极的射频接地 Expired - Fee Related CN102324367B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/946,403 US7534301B2 (en) 2004-09-21 2004-09-21 RF grounding of cathode in process chamber
US10/946,403 2004-09-21
CN2005101036957A CN1752281B (zh) 2004-09-21 2005-09-09 制程处理室中阴极的射频接地

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN2005101036957A Division CN1752281B (zh) 2004-09-21 2005-09-09 制程处理室中阴极的射频接地

Publications (2)

Publication Number Publication Date
CN102324367A CN102324367A (zh) 2012-01-18
CN102324367B true CN102324367B (zh) 2016-02-03

Family

ID=36072681

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201110192596.6A Expired - Fee Related CN102324367B (zh) 2004-09-21 2005-09-09 制程处理室中阴极的射频接地
CN2005101036957A Expired - Fee Related CN1752281B (zh) 2004-09-21 2005-09-09 制程处理室中阴极的射频接地

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN2005101036957A Expired - Fee Related CN1752281B (zh) 2004-09-21 2005-09-09 制程处理室中阴极的射频接地

Country Status (5)

Country Link
US (2) US7534301B2 (enExample)
JP (2) JP5033319B2 (enExample)
KR (2) KR101441892B1 (enExample)
CN (2) CN102324367B (enExample)
TW (2) TWI314759B (enExample)

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Also Published As

Publication number Publication date
JP2006104575A (ja) 2006-04-20
KR101441892B1 (ko) 2014-09-19
KR20060051437A (ko) 2006-05-19
JP5033319B2 (ja) 2012-09-26
TWI314759B (en) 2009-09-11
US7534301B2 (en) 2009-05-19
CN1752281A (zh) 2006-03-29
TWI392017B (zh) 2013-04-01
KR101185908B1 (ko) 2012-09-25
JP5037560B2 (ja) 2012-09-26
US20090178617A1 (en) 2009-07-16
CN1752281B (zh) 2011-08-24
JP2009280913A (ja) 2009-12-03
KR20090057202A (ko) 2009-06-04
US20060060302A1 (en) 2006-03-23
CN102324367A (zh) 2012-01-18
TW200611333A (en) 2006-04-01
TW201001533A (en) 2010-01-01

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