TWI314759B - Rf grounding of cathode in process chamber - Google Patents

Rf grounding of cathode in process chamber Download PDF

Info

Publication number
TWI314759B
TWI314759B TW094125453A TW94125453A TWI314759B TW I314759 B TWI314759 B TW I314759B TW 094125453 A TW094125453 A TW 094125453A TW 94125453 A TW94125453 A TW 94125453A TW I314759 B TWI314759 B TW I314759B
Authority
TW
Taiwan
Prior art keywords
substrate support
chamber wall
process chamber
substrate
bendable
Prior art date
Application number
TW094125453A
Other languages
English (en)
Chinese (zh)
Other versions
TW200611333A (en
Inventor
John M White
Robin L Tiner
Beom Soo Park
Wendell T Blonigan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200611333A publication Critical patent/TW200611333A/zh
Application granted granted Critical
Publication of TWI314759B publication Critical patent/TWI314759B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
TW094125453A 2004-09-21 2005-07-27 Rf grounding of cathode in process chamber TWI314759B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/946,403 US7534301B2 (en) 2004-09-21 2004-09-21 RF grounding of cathode in process chamber

Publications (2)

Publication Number Publication Date
TW200611333A TW200611333A (en) 2006-04-01
TWI314759B true TWI314759B (en) 2009-09-11

Family

ID=36072681

Family Applications (2)

Application Number Title Priority Date Filing Date
TW094125453A TWI314759B (en) 2004-09-21 2005-07-27 Rf grounding of cathode in process chamber
TW098113783A TWI392017B (zh) 2004-09-21 2005-07-27 製程處理室中陰極之rf接地

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW098113783A TWI392017B (zh) 2004-09-21 2005-07-27 製程處理室中陰極之rf接地

Country Status (5)

Country Link
US (2) US7534301B2 (enExample)
JP (2) JP5033319B2 (enExample)
KR (2) KR101441892B1 (enExample)
CN (2) CN102324367B (enExample)
TW (2) TWI314759B (enExample)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8083853B2 (en) * 2004-05-12 2011-12-27 Applied Materials, Inc. Plasma uniformity control by gas diffuser hole design
JP2006313313A (ja) 2005-04-06 2006-11-16 Sony Corp 再生装置、設定切替方法および設定切替装置
US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
US8004293B2 (en) * 2006-11-20 2011-08-23 Applied Materials, Inc. Plasma processing chamber with ground member integrity indicator and method for using the same
WO2008079742A2 (en) * 2006-12-20 2008-07-03 Applied Materials, Inc. Prevention of film deposition on pecvd process chamber wall
US8381677B2 (en) * 2006-12-20 2013-02-26 Applied Materials, Inc. Prevention of film deposition on PECVD process chamber wall
US7968469B2 (en) * 2007-01-30 2011-06-28 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity
US7959735B2 (en) * 2007-02-08 2011-06-14 Applied Materials, Inc. Susceptor with insulative inserts
KR101374583B1 (ko) * 2007-03-01 2014-03-17 어플라이드 머티어리얼스, 인코포레이티드 Rf 셔터
JP4887202B2 (ja) * 2007-04-17 2012-02-29 東京エレクトロン株式会社 プラズマ処理装置及び高周波電流の短絡回路
US7972470B2 (en) * 2007-05-03 2011-07-05 Applied Materials, Inc. Asymmetric grounding of rectangular susceptor
US8597428B2 (en) * 2007-12-12 2013-12-03 Lam Research Corporation Vacuum sealing radio frequency (RF) and low frequency conducting actuator
KR100929153B1 (ko) * 2007-12-27 2009-12-01 세메스 주식회사 전원 전송부재 및 이의 제조 방법
US20090255798A1 (en) * 2008-04-12 2009-10-15 Gaku Furuta Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber
WO2010042860A2 (en) * 2008-10-09 2010-04-15 Applied Materials, Inc. Rf return path for large plasma processing chamber
US20100136261A1 (en) * 2008-12-03 2010-06-03 Applied Materials, Inc. Modulation of rf returning straps for uniformity control
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8627783B2 (en) * 2008-12-19 2014-01-14 Lam Research Corporation Combined wafer area pressure control and plasma confinement assembly
JP2010161316A (ja) * 2009-01-09 2010-07-22 Ulvac Japan Ltd プラズマ処理装置
CN102308675B (zh) * 2009-02-04 2016-01-13 应用材料公司 用于等离子体工艺的接地回流路径
US9758869B2 (en) * 2009-05-13 2017-09-12 Applied Materials, Inc. Anodized showerhead
KR101081744B1 (ko) * 2009-08-17 2011-11-09 주성엔지니어링(주) 기판처리장치
KR200476124Y1 (ko) * 2009-09-29 2015-01-30 어플라이드 머티어리얼스, 인코포레이티드 Rf­전력공급 샤워헤드를 위한 편심 접지 복귀
KR101127757B1 (ko) * 2009-12-02 2012-03-23 주식회사 테스 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버
KR101039524B1 (ko) 2010-02-19 2011-06-09 주성엔지니어링(주) 플라즈마 처리 장치
TW201145440A (en) * 2010-06-09 2011-12-16 Global Material Science Co Ltd Shadow frame and manufacturing method thereof
KR101103450B1 (ko) * 2010-07-27 2012-01-09 주식회사 케이씨텍 기판 도금 장치
TW201324818A (zh) * 2011-10-21 2013-06-16 Applied Materials Inc 製造矽異質接面太陽能電池之方法與設備
US9083182B2 (en) 2011-11-21 2015-07-14 Lam Research Corporation Bypass capacitors for high voltage bias power in the mid frequency RF range
US8898889B2 (en) 2011-11-22 2014-12-02 Lam Research Corporation Chuck assembly for plasma processing
US10586686B2 (en) 2011-11-22 2020-03-10 Law Research Corporation Peripheral RF feed and symmetric RF return for symmetric RF delivery
US9263240B2 (en) * 2011-11-22 2016-02-16 Lam Research Corporation Dual zone temperature control of upper electrodes
US9396908B2 (en) 2011-11-22 2016-07-19 Lam Research Corporation Systems and methods for controlling a plasma edge region
CN104024477B (zh) * 2011-11-23 2016-05-18 朗姆研究公司 多区域气体注入上电极系统
WO2013078434A1 (en) * 2011-11-24 2013-05-30 Lam Research Corporation Plasma processing chamber with flexible symmetric rf return strap
US20130160948A1 (en) * 2011-12-23 2013-06-27 Lam Research Corporation Plasma Processing Devices With Corrosion Resistant Components
US9230779B2 (en) * 2012-03-19 2016-01-05 Lam Research Corporation Methods and apparatus for correcting for non-uniformity in a plasma processing system
US8911588B2 (en) * 2012-03-19 2014-12-16 Lam Research Corporation Methods and apparatus for selectively modifying RF current paths in a plasma processing system
US9340866B2 (en) 2012-03-30 2016-05-17 Applied Materials, Inc. Substrate support with radio frequency (RF) return path
US9633823B2 (en) * 2013-03-14 2017-04-25 Cardinal Cg Company Plasma emission monitor and process gas delivery system
WO2015116245A1 (en) * 2014-01-30 2015-08-06 Applied Materials, Inc. Gas confiner assembly for eliminating shadow frame
CN104294206B (zh) * 2014-10-09 2016-05-04 沈阳富创精密设备有限公司 一种半导体装备用抗高温蠕变接地基片的制备方法
US10134615B2 (en) * 2015-02-13 2018-11-20 Applied Materials, Inc. Substrate support with improved RF return
US20160348233A1 (en) * 2015-05-29 2016-12-01 Applied Materials, Inc. Grounding of conductive mask for deposition processes
US20170365449A1 (en) * 2016-06-21 2017-12-21 Applied Materials, Inc. Rf return strap shielding cover
KR102173212B1 (ko) * 2016-06-24 2020-11-03 주식회사 원익아이피에스 기판처리장치
JP6683575B2 (ja) * 2016-09-01 2020-04-22 東京エレクトロン株式会社 プラズマ処理装置
KR102399343B1 (ko) * 2017-05-29 2022-05-19 삼성디스플레이 주식회사 화학기상 증착장치
WO2019023636A1 (en) 2017-07-28 2019-01-31 Tokyo Electron Limited SYSTEM AND METHOD FOR DEPOSITING THE BACK OF A SUBSTRATE
TWI704252B (zh) * 2017-09-04 2020-09-11 台灣積體電路製造股份有限公司 升舉裝置、化學氣相沉積裝置及方法
CN108103473B (zh) * 2017-12-18 2020-04-24 沈阳拓荆科技有限公司 用于半导体处理腔体的遮蔽装置及其使用方法
KR102523798B1 (ko) 2018-02-09 2023-04-21 주성엔지니어링(주) 마스크 홀더 및 이를 포함하는 기판처리장치
US11434569B2 (en) * 2018-05-25 2022-09-06 Applied Materials, Inc. Ground path systems for providing a shorter and symmetrical ground path
CN111326389B (zh) * 2018-12-17 2023-06-16 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326387B (zh) * 2018-12-17 2023-04-21 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
CN111326382B (zh) * 2018-12-17 2023-07-18 中微半导体设备(上海)股份有限公司 一种电容耦合等离子体刻蚀设备
US11270870B2 (en) * 2019-04-02 2022-03-08 Applied Materials, Inc. Processing equipment component plating
US20220236007A1 (en) * 2019-06-07 2022-07-28 Pyrogenesis Canada Inc. Non-water cooled consumable electrode vacuum arc furnace for continuous process
JP7733638B2 (ja) * 2019-08-02 2025-09-03 アプライド マテリアルズ インコーポレイテッド 高周波電力リターン経路
CN112447475B (zh) * 2019-09-05 2023-09-29 中微半导体设备(上海)股份有限公司 一种具有柔性电介质薄片的等离子体处理装置
US12354847B2 (en) * 2020-03-12 2025-07-08 Applied Materials, Inc. Methods and apparatus for conductance liners in semiconductor process chambers
JP7407645B2 (ja) * 2020-04-03 2024-01-04 東京エレクトロン株式会社 プラズマ処理装置
US11443921B2 (en) * 2020-06-11 2022-09-13 Applied Materials, Inc. Radio frequency ground system and method
US11887884B2 (en) * 2020-10-16 2024-01-30 Applied Materials, Inc. Pre-loaded bowl mechanism for providing a symmetric radio frequency return path
US11664247B2 (en) * 2020-10-16 2023-05-30 Applied Materials, Inc. Dynamic interface for providing a symmetric radio frequency return path
JP7610034B2 (ja) * 2021-04-01 2025-01-07 アプライド マテリアルズ インコーポレイテッド プラズマを使用した薄膜形成のグランドリターン
US12378669B2 (en) 2022-01-28 2025-08-05 Applied Materials, Inc. Ground return for thin film formation using plasma

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4998178A (en) 1990-06-18 1991-03-05 Minnesota Mining And Manufacturing Company Adjustable, conductive body strap
US5275683A (en) * 1991-10-24 1994-01-04 Tokyo Electron Limited Mount for supporting substrates and plasma processing apparatus using the same
KR100276093B1 (ko) * 1992-10-19 2000-12-15 히가시 데쓰로 플라스마 에칭방법
US5542559A (en) * 1993-02-16 1996-08-06 Tokyo Electron Kabushiki Kaisha Plasma treatment apparatus
US5522937A (en) 1994-05-03 1996-06-04 Applied Materials, Inc. Welded susceptor assembly
US5558717A (en) * 1994-11-30 1996-09-24 Applied Materials CVD Processing chamber
US6264812B1 (en) 1995-11-15 2001-07-24 Applied Materials, Inc. Method and apparatus for generating a plasma
US5846332A (en) 1996-07-12 1998-12-08 Applied Materials, Inc. Thermally floating pedestal collar in a chemical vapor deposition chamber
US5790365A (en) * 1996-07-31 1998-08-04 Applied Materials, Inc. Method and apparatus for releasing a workpiece from and electrostatic chuck
US6024044A (en) 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
JP3710081B2 (ja) * 1997-11-30 2005-10-26 アルプス電気株式会社 プラズマ処理装置
US6063441A (en) 1997-12-02 2000-05-16 Applied Materials, Inc. Processing chamber and method for confining plasma
US6773562B1 (en) 1998-02-20 2004-08-10 Applied Materials, Inc. Shadow frame for substrate processing
US6197438B1 (en) * 1998-03-11 2001-03-06 Roger Faulkner Foodware with ceramic food contacting surface
US6129808A (en) * 1998-03-31 2000-10-10 Lam Research Corporation Low contamination high density plasma etch chambers and methods for making the same
US6287435B1 (en) * 1998-05-06 2001-09-11 Tokyo Electron Limited Method and apparatus for ionized physical vapor deposition
US6162332A (en) * 1998-05-07 2000-12-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for preventing arcing in sputter chamber
US6183564B1 (en) * 1998-11-12 2001-02-06 Tokyo Electron Limited Buffer chamber for integrating physical and chemical vapor deposition chambers together in a processing system
US6221221B1 (en) * 1998-11-16 2001-04-24 Applied Materials, Inc. Apparatus for providing RF return current path control in a semiconductor wafer processing system
US6558504B1 (en) 1998-12-21 2003-05-06 Research Triangle Institute Plasma processing system and method
US6779481B2 (en) * 2000-04-27 2004-08-24 Tokyo Electron Limited Electrical coupling between chamber parts in electronic device processing equipment
TW570856B (en) * 2001-01-18 2004-01-11 Fujitsu Ltd Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system
KR100738837B1 (ko) * 2001-02-13 2007-07-12 엘지.필립스 엘시디 주식회사 플라즈마화학증착 장치
US6417626B1 (en) * 2001-03-01 2002-07-09 Tokyo Electron Limited Immersed inductively—coupled plasma source
US20050189074A1 (en) * 2002-11-08 2005-09-01 Tokyo Electron Limited Gas processing apparatus and method and computer storage medium storing program for controlling same
US6527912B2 (en) * 2001-03-30 2003-03-04 Lam Research Corporation Stacked RF excitation coil for inductive plasma processor
US6652713B2 (en) 2001-08-09 2003-11-25 Applied Materials, Inc. Pedestal with integral shield
US7100532B2 (en) 2001-10-09 2006-09-05 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
US7060545B1 (en) 2002-10-31 2006-06-13 Micrel, Inc. Method of making truncated power enhanced drift lateral DMOS device with ground strap
US6933442B2 (en) 2003-02-12 2005-08-23 Senior Industries, Inc. Methods and apparatus to secure a ground strap assembly to an electrically conductive member
US6830624B2 (en) 2003-05-02 2004-12-14 Applied Materials, Inc. Blocker plate by-pass for remote plasma clean
US7083702B2 (en) 2003-06-12 2006-08-01 Applied Materials, Inc. RF current return path for a large area substrate plasma reactor
US7785672B2 (en) 2004-04-20 2010-08-31 Applied Materials, Inc. Method of controlling the film properties of PECVD-deposited thin films
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7429410B2 (en) 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support

Also Published As

Publication number Publication date
JP2006104575A (ja) 2006-04-20
KR101441892B1 (ko) 2014-09-19
KR20060051437A (ko) 2006-05-19
JP5033319B2 (ja) 2012-09-26
US7534301B2 (en) 2009-05-19
CN1752281A (zh) 2006-03-29
TWI392017B (zh) 2013-04-01
KR101185908B1 (ko) 2012-09-25
JP5037560B2 (ja) 2012-09-26
US20090178617A1 (en) 2009-07-16
CN1752281B (zh) 2011-08-24
JP2009280913A (ja) 2009-12-03
KR20090057202A (ko) 2009-06-04
US20060060302A1 (en) 2006-03-23
CN102324367A (zh) 2012-01-18
TW200611333A (en) 2006-04-01
CN102324367B (zh) 2016-02-03
TW201001533A (en) 2010-01-01

Similar Documents

Publication Publication Date Title
TWI314759B (en) Rf grounding of cathode in process chamber
TWI313574B (en) Rf current return path for a large area substrate plasma reactor
JP3457477B2 (ja) 静電チャック
US6676761B2 (en) Method and apparatus for dechucking a substrate
TWI301311B (en) Method and apparatus for dechucking a substrate
TW201031284A (en) RF return path for large plasma processing chamber
US20060005770A1 (en) Independently moving substrate supports
JP3098286U (ja) 基板支持用アセンブリ
KR20040096785A (ko) 양극처리된 기판 지지부
TW200811983A (en) Transporting machine
JP2008138283A (ja) 表面テクスチャリングを組み込んだプラズマリアクタ基板
JP2007311823A (ja) 吸着装置、搬送装置
TWI455192B (zh) 避免在pecvd製程腔壁上沉積薄膜的設備及方法
CN111433903A (zh) 晶圆支撑装置
JP2004047912A (ja) 吸着装置及び真空処理装置
JP4676098B2 (ja) 吸着装置
JP2003133400A (ja) 吸着装置、真空処理装置及び吸着装置の製造方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees