TWI314759B - Rf grounding of cathode in process chamber - Google Patents
Rf grounding of cathode in process chamber Download PDFInfo
- Publication number
- TWI314759B TWI314759B TW094125453A TW94125453A TWI314759B TW I314759 B TWI314759 B TW I314759B TW 094125453 A TW094125453 A TW 094125453A TW 94125453 A TW94125453 A TW 94125453A TW I314759 B TWI314759 B TW I314759B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate support
- chamber wall
- process chamber
- substrate
- bendable
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 222
- 239000000758 substrate Substances 0.000 claims description 314
- 238000012545 processing Methods 0.000 claims description 68
- 239000000523 sample Substances 0.000 claims description 55
- 239000000463 material Substances 0.000 claims description 52
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 229910052782 aluminium Inorganic materials 0.000 claims description 29
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 29
- 239000011248 coating agent Substances 0.000 claims description 29
- 238000000576 coating method Methods 0.000 claims description 29
- 238000009826 distribution Methods 0.000 claims description 26
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 24
- 239000010936 titanium Substances 0.000 claims description 24
- 229910052719 titanium Inorganic materials 0.000 claims description 24
- 238000012546 transfer Methods 0.000 claims description 22
- 229910001220 stainless steel Inorganic materials 0.000 claims description 19
- 239000010935 stainless steel Substances 0.000 claims description 19
- 238000005476 soldering Methods 0.000 claims description 15
- 238000003466 welding Methods 0.000 claims description 15
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 11
- 239000011343 solid material Substances 0.000 claims description 10
- 229910000831 Steel Inorganic materials 0.000 claims description 7
- 239000010959 steel Substances 0.000 claims description 7
- 230000000873 masking effect Effects 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 4
- 238000010168 coupling process Methods 0.000 claims description 4
- 238000005859 coupling reaction Methods 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims 4
- 239000007787 solid Substances 0.000 claims 4
- 239000000470 constituent Substances 0.000 claims 2
- 239000000654 additive Substances 0.000 claims 1
- 230000000996 additive effect Effects 0.000 claims 1
- 239000008247 solid mixture Substances 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 32
- 238000000151 deposition Methods 0.000 description 23
- 230000008021 deposition Effects 0.000 description 22
- 238000004140 cleaning Methods 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 239000000725 suspension Substances 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 241000544061 Cuculus canorus Species 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000012773 agricultural material Substances 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/946,403 US7534301B2 (en) | 2004-09-21 | 2004-09-21 | RF grounding of cathode in process chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200611333A TW200611333A (en) | 2006-04-01 |
| TWI314759B true TWI314759B (en) | 2009-09-11 |
Family
ID=36072681
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094125453A TWI314759B (en) | 2004-09-21 | 2005-07-27 | Rf grounding of cathode in process chamber |
| TW098113783A TWI392017B (zh) | 2004-09-21 | 2005-07-27 | 製程處理室中陰極之rf接地 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098113783A TWI392017B (zh) | 2004-09-21 | 2005-07-27 | 製程處理室中陰極之rf接地 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7534301B2 (enExample) |
| JP (2) | JP5033319B2 (enExample) |
| KR (2) | KR101441892B1 (enExample) |
| CN (2) | CN102324367B (enExample) |
| TW (2) | TWI314759B (enExample) |
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-
2004
- 2004-09-21 US US10/946,403 patent/US7534301B2/en not_active Expired - Lifetime
-
2005
- 2005-07-27 TW TW094125453A patent/TWI314759B/zh not_active IP Right Cessation
- 2005-07-27 TW TW098113783A patent/TWI392017B/zh not_active IP Right Cessation
- 2005-09-09 CN CN201110192596.6A patent/CN102324367B/zh not_active Expired - Fee Related
- 2005-09-09 CN CN2005101036957A patent/CN1752281B/zh not_active Expired - Fee Related
- 2005-09-20 KR KR1020050087388A patent/KR101441892B1/ko not_active Expired - Fee Related
- 2005-09-21 JP JP2005274384A patent/JP5033319B2/ja not_active Expired - Fee Related
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2009
- 2009-03-18 US US12/406,407 patent/US20090178617A1/en not_active Abandoned
- 2009-05-01 JP JP2009112186A patent/JP5037560B2/ja not_active Expired - Fee Related
- 2009-05-06 KR KR1020090039228A patent/KR101185908B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006104575A (ja) | 2006-04-20 |
| KR101441892B1 (ko) | 2014-09-19 |
| KR20060051437A (ko) | 2006-05-19 |
| JP5033319B2 (ja) | 2012-09-26 |
| US7534301B2 (en) | 2009-05-19 |
| CN1752281A (zh) | 2006-03-29 |
| TWI392017B (zh) | 2013-04-01 |
| KR101185908B1 (ko) | 2012-09-25 |
| JP5037560B2 (ja) | 2012-09-26 |
| US20090178617A1 (en) | 2009-07-16 |
| CN1752281B (zh) | 2011-08-24 |
| JP2009280913A (ja) | 2009-12-03 |
| KR20090057202A (ko) | 2009-06-04 |
| US20060060302A1 (en) | 2006-03-23 |
| CN102324367A (zh) | 2012-01-18 |
| TW200611333A (en) | 2006-04-01 |
| CN102324367B (zh) | 2016-02-03 |
| TW201001533A (en) | 2010-01-01 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |