KR101441892B1 - 프로세스 챔버 내에서 캐소드의 rf 접지 - Google Patents

프로세스 챔버 내에서 캐소드의 rf 접지 Download PDF

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Publication number
KR101441892B1
KR101441892B1 KR1020050087388A KR20050087388A KR101441892B1 KR 101441892 B1 KR101441892 B1 KR 101441892B1 KR 1020050087388 A KR1020050087388 A KR 1020050087388A KR 20050087388 A KR20050087388 A KR 20050087388A KR 101441892 B1 KR101441892 B1 KR 101441892B1
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South Korea
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delete delete
substrate support
substrate
vapor deposition
ground
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Expired - Fee Related
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KR1020050087388A
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English (en)
Korean (ko)
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KR20060051437A (ko
Inventor
존 엠. 화이트
로빈 엘. 티너
범수 박
웬델 티. 브로니겐
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20060051437A publication Critical patent/KR20060051437A/ko
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32715Workpiece holder
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020050087388A 2004-09-21 2005-09-20 프로세스 챔버 내에서 캐소드의 rf 접지 Expired - Fee Related KR101441892B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/946,403 US7534301B2 (en) 2004-09-21 2004-09-21 RF grounding of cathode in process chamber
US10/946,403 2004-09-21

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020090039228A Division KR101185908B1 (ko) 2004-09-21 2009-05-06 프로세스 챔버 내에서 캐소드의 rf 접지

Publications (2)

Publication Number Publication Date
KR20060051437A KR20060051437A (ko) 2006-05-19
KR101441892B1 true KR101441892B1 (ko) 2014-09-19

Family

ID=36072681

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020050087388A Expired - Fee Related KR101441892B1 (ko) 2004-09-21 2005-09-20 프로세스 챔버 내에서 캐소드의 rf 접지
KR1020090039228A Expired - Fee Related KR101185908B1 (ko) 2004-09-21 2009-05-06 프로세스 챔버 내에서 캐소드의 rf 접지

Family Applications After (1)

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KR1020090039228A Expired - Fee Related KR101185908B1 (ko) 2004-09-21 2009-05-06 프로세스 챔버 내에서 캐소드의 rf 접지

Country Status (5)

Country Link
US (2) US7534301B2 (enExample)
JP (2) JP5033319B2 (enExample)
KR (2) KR101441892B1 (enExample)
CN (2) CN102324367B (enExample)
TW (2) TWI314759B (enExample)

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US11214870B2 (en) 2017-05-29 2022-01-04 Samsung Display Co., Ltd. Chemical vapor deposition system including ground strap bar

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Also Published As

Publication number Publication date
JP2006104575A (ja) 2006-04-20
KR20060051437A (ko) 2006-05-19
JP5033319B2 (ja) 2012-09-26
TWI314759B (en) 2009-09-11
US7534301B2 (en) 2009-05-19
CN1752281A (zh) 2006-03-29
TWI392017B (zh) 2013-04-01
KR101185908B1 (ko) 2012-09-25
JP5037560B2 (ja) 2012-09-26
US20090178617A1 (en) 2009-07-16
CN1752281B (zh) 2011-08-24
JP2009280913A (ja) 2009-12-03
KR20090057202A (ko) 2009-06-04
US20060060302A1 (en) 2006-03-23
CN102324367A (zh) 2012-01-18
TW200611333A (en) 2006-04-01
CN102324367B (zh) 2016-02-03
TW201001533A (en) 2010-01-01

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