KR101441892B1 - 프로세스 챔버 내에서 캐소드의 rf 접지 - Google Patents
프로세스 챔버 내에서 캐소드의 rf 접지 Download PDFInfo
- Publication number
- KR101441892B1 KR101441892B1 KR1020050087388A KR20050087388A KR101441892B1 KR 101441892 B1 KR101441892 B1 KR 101441892B1 KR 1020050087388 A KR1020050087388 A KR 1020050087388A KR 20050087388 A KR20050087388 A KR 20050087388A KR 101441892 B1 KR101441892 B1 KR 101441892B1
- Authority
- KR
- South Korea
- Prior art keywords
- delete delete
- substrate support
- substrate
- vapor deposition
- ground
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/946,403 US7534301B2 (en) | 2004-09-21 | 2004-09-21 | RF grounding of cathode in process chamber |
| US10/946,403 | 2004-09-21 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090039228A Division KR101185908B1 (ko) | 2004-09-21 | 2009-05-06 | 프로세스 챔버 내에서 캐소드의 rf 접지 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20060051437A KR20060051437A (ko) | 2006-05-19 |
| KR101441892B1 true KR101441892B1 (ko) | 2014-09-19 |
Family
ID=36072681
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020050087388A Expired - Fee Related KR101441892B1 (ko) | 2004-09-21 | 2005-09-20 | 프로세스 챔버 내에서 캐소드의 rf 접지 |
| KR1020090039228A Expired - Fee Related KR101185908B1 (ko) | 2004-09-21 | 2009-05-06 | 프로세스 챔버 내에서 캐소드의 rf 접지 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020090039228A Expired - Fee Related KR101185908B1 (ko) | 2004-09-21 | 2009-05-06 | 프로세스 챔버 내에서 캐소드의 rf 접지 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7534301B2 (enExample) |
| JP (2) | JP5033319B2 (enExample) |
| KR (2) | KR101441892B1 (enExample) |
| CN (2) | CN102324367B (enExample) |
| TW (2) | TWI314759B (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190096648A (ko) | 2018-02-09 | 2019-08-20 | 주성엔지니어링(주) | 마스크 홀더 및 이를 포함하는 기판처리장치 |
| US11214870B2 (en) | 2017-05-29 | 2022-01-04 | Samsung Display Co., Ltd. | Chemical vapor deposition system including ground strap bar |
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| US8083853B2 (en) * | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| JP2006313313A (ja) | 2005-04-06 | 2006-11-16 | Sony Corp | 再生装置、設定切替方法および設定切替装置 |
| US7722778B2 (en) * | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
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| KR101374583B1 (ko) * | 2007-03-01 | 2014-03-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf 셔터 |
| JP4887202B2 (ja) * | 2007-04-17 | 2012-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置及び高周波電流の短絡回路 |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| US8597428B2 (en) * | 2007-12-12 | 2013-12-03 | Lam Research Corporation | Vacuum sealing radio frequency (RF) and low frequency conducting actuator |
| KR100929153B1 (ko) * | 2007-12-27 | 2009-12-01 | 세메스 주식회사 | 전원 전송부재 및 이의 제조 방법 |
| US20090255798A1 (en) * | 2008-04-12 | 2009-10-15 | Gaku Furuta | Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber |
| WO2010042860A2 (en) * | 2008-10-09 | 2010-04-15 | Applied Materials, Inc. | Rf return path for large plasma processing chamber |
| US20100136261A1 (en) * | 2008-12-03 | 2010-06-03 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
| US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
| US8627783B2 (en) * | 2008-12-19 | 2014-01-14 | Lam Research Corporation | Combined wafer area pressure control and plasma confinement assembly |
| JP2010161316A (ja) * | 2009-01-09 | 2010-07-22 | Ulvac Japan Ltd | プラズマ処理装置 |
| CN102308675B (zh) * | 2009-02-04 | 2016-01-13 | 应用材料公司 | 用于等离子体工艺的接地回流路径 |
| US9758869B2 (en) * | 2009-05-13 | 2017-09-12 | Applied Materials, Inc. | Anodized showerhead |
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| KR200476124Y1 (ko) * | 2009-09-29 | 2015-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf전력공급 샤워헤드를 위한 편심 접지 복귀 |
| KR101127757B1 (ko) * | 2009-12-02 | 2012-03-23 | 주식회사 테스 | 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버 |
| KR101039524B1 (ko) | 2010-02-19 | 2011-06-09 | 주성엔지니어링(주) | 플라즈마 처리 장치 |
| TW201145440A (en) * | 2010-06-09 | 2011-12-16 | Global Material Science Co Ltd | Shadow frame and manufacturing method thereof |
| KR101103450B1 (ko) * | 2010-07-27 | 2012-01-09 | 주식회사 케이씨텍 | 기판 도금 장치 |
| TW201324818A (zh) * | 2011-10-21 | 2013-06-16 | Applied Materials Inc | 製造矽異質接面太陽能電池之方法與設備 |
| US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
| US8898889B2 (en) | 2011-11-22 | 2014-12-02 | Lam Research Corporation | Chuck assembly for plasma processing |
| US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
| US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
| CN104024477B (zh) * | 2011-11-23 | 2016-05-18 | 朗姆研究公司 | 多区域气体注入上电极系统 |
| WO2013078434A1 (en) * | 2011-11-24 | 2013-05-30 | Lam Research Corporation | Plasma processing chamber with flexible symmetric rf return strap |
| US20130160948A1 (en) * | 2011-12-23 | 2013-06-27 | Lam Research Corporation | Plasma Processing Devices With Corrosion Resistant Components |
| US9230779B2 (en) * | 2012-03-19 | 2016-01-05 | Lam Research Corporation | Methods and apparatus for correcting for non-uniformity in a plasma processing system |
| US8911588B2 (en) * | 2012-03-19 | 2014-12-16 | Lam Research Corporation | Methods and apparatus for selectively modifying RF current paths in a plasma processing system |
| US9340866B2 (en) | 2012-03-30 | 2016-05-17 | Applied Materials, Inc. | Substrate support with radio frequency (RF) return path |
| US9633823B2 (en) * | 2013-03-14 | 2017-04-25 | Cardinal Cg Company | Plasma emission monitor and process gas delivery system |
| WO2015116245A1 (en) * | 2014-01-30 | 2015-08-06 | Applied Materials, Inc. | Gas confiner assembly for eliminating shadow frame |
| CN104294206B (zh) * | 2014-10-09 | 2016-05-04 | 沈阳富创精密设备有限公司 | 一种半导体装备用抗高温蠕变接地基片的制备方法 |
| US10134615B2 (en) * | 2015-02-13 | 2018-11-20 | Applied Materials, Inc. | Substrate support with improved RF return |
| US20160348233A1 (en) * | 2015-05-29 | 2016-12-01 | Applied Materials, Inc. | Grounding of conductive mask for deposition processes |
| US20170365449A1 (en) * | 2016-06-21 | 2017-12-21 | Applied Materials, Inc. | Rf return strap shielding cover |
| KR102173212B1 (ko) * | 2016-06-24 | 2020-11-03 | 주식회사 원익아이피에스 | 기판처리장치 |
| JP6683575B2 (ja) * | 2016-09-01 | 2020-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| WO2019023636A1 (en) | 2017-07-28 | 2019-01-31 | Tokyo Electron Limited | SYSTEM AND METHOD FOR DEPOSITING THE BACK OF A SUBSTRATE |
| TWI704252B (zh) * | 2017-09-04 | 2020-09-11 | 台灣積體電路製造股份有限公司 | 升舉裝置、化學氣相沉積裝置及方法 |
| CN108103473B (zh) * | 2017-12-18 | 2020-04-24 | 沈阳拓荆科技有限公司 | 用于半导体处理腔体的遮蔽装置及其使用方法 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010080470A (ko) * | 1998-11-16 | 2001-08-22 | 조셉 제이. 스위니 | 반도체 웨이퍼 처리 시스템에서 고주파 복귀 전류 경로제어를 제공하는 장치 |
| US20010035132A1 (en) * | 2000-04-27 | 2001-11-01 | Tokyo Electron Limited | Electrical coupling between chamber parts in electronic device processing equipment |
| KR20020066707A (ko) * | 2001-02-13 | 2002-08-21 | 엘지.필립스 엘시디 주식회사 | 플라즈마화학증착 장치 |
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-
2004
- 2004-09-21 US US10/946,403 patent/US7534301B2/en not_active Expired - Lifetime
-
2005
- 2005-07-27 TW TW094125453A patent/TWI314759B/zh not_active IP Right Cessation
- 2005-07-27 TW TW098113783A patent/TWI392017B/zh not_active IP Right Cessation
- 2005-09-09 CN CN201110192596.6A patent/CN102324367B/zh not_active Expired - Fee Related
- 2005-09-09 CN CN2005101036957A patent/CN1752281B/zh not_active Expired - Fee Related
- 2005-09-20 KR KR1020050087388A patent/KR101441892B1/ko not_active Expired - Fee Related
- 2005-09-21 JP JP2005274384A patent/JP5033319B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-18 US US12/406,407 patent/US20090178617A1/en not_active Abandoned
- 2009-05-01 JP JP2009112186A patent/JP5037560B2/ja not_active Expired - Fee Related
- 2009-05-06 KR KR1020090039228A patent/KR101185908B1/ko not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010080470A (ko) * | 1998-11-16 | 2001-08-22 | 조셉 제이. 스위니 | 반도체 웨이퍼 처리 시스템에서 고주파 복귀 전류 경로제어를 제공하는 장치 |
| US20010035132A1 (en) * | 2000-04-27 | 2001-11-01 | Tokyo Electron Limited | Electrical coupling between chamber parts in electronic device processing equipment |
| KR20020066707A (ko) * | 2001-02-13 | 2002-08-21 | 엘지.필립스 엘시디 주식회사 | 플라즈마화학증착 장치 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11214870B2 (en) | 2017-05-29 | 2022-01-04 | Samsung Display Co., Ltd. | Chemical vapor deposition system including ground strap bar |
| KR20190096648A (ko) | 2018-02-09 | 2019-08-20 | 주성엔지니어링(주) | 마스크 홀더 및 이를 포함하는 기판처리장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2006104575A (ja) | 2006-04-20 |
| KR20060051437A (ko) | 2006-05-19 |
| JP5033319B2 (ja) | 2012-09-26 |
| TWI314759B (en) | 2009-09-11 |
| US7534301B2 (en) | 2009-05-19 |
| CN1752281A (zh) | 2006-03-29 |
| TWI392017B (zh) | 2013-04-01 |
| KR101185908B1 (ko) | 2012-09-25 |
| JP5037560B2 (ja) | 2012-09-26 |
| US20090178617A1 (en) | 2009-07-16 |
| CN1752281B (zh) | 2011-08-24 |
| JP2009280913A (ja) | 2009-12-03 |
| KR20090057202A (ko) | 2009-06-04 |
| US20060060302A1 (en) | 2006-03-23 |
| CN102324367A (zh) | 2012-01-18 |
| TW200611333A (en) | 2006-04-01 |
| CN102324367B (zh) | 2016-02-03 |
| TW201001533A (en) | 2010-01-01 |
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