JP2008138283A - 表面テクスチャリングを組み込んだプラズマリアクタ基板 - Google Patents
表面テクスチャリングを組み込んだプラズマリアクタ基板 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 167
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000010438 heat treatment Methods 0.000 claims description 12
- 230000003014 reinforcing effect Effects 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 7
- 238000003486 chemical etching Methods 0.000 claims description 5
- 230000036961 partial effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 238000000227 grinding Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 27
- 238000009826 distribution Methods 0.000 description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 229920002120 photoresistant polymer Polymers 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 4
- 238000010924 continuous production Methods 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
- 239000000835 fiber Substances 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003068 static effect Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000010891 electric arc Methods 0.000 description 2
- 230000005484 gravity Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 230000002787 reinforcement Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 description 1
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010285 flame spraying Methods 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007750 plasma spraying Methods 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000011253 protective coating Substances 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 238000007751 thermal spraying Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
Abstract
【解決課題】本発明の一実施形態は、プラズマリアクタにおいて用いるための基板サポートを提供する。プラズマリアクタは、大面積基板の裏面と接触するための複数の隆起領域のある上面を備えた導電性本体を有している。複数の隆起領域は、上面の表面積の約50%未満を占める。
【選択図】図2
Description
本発明の実施形態は、概して、大面積基板を処理する装置及び方法に関する。特に、本発明の実施形態は、半導体処理において大面積基板をサポートするための基板サポート、及びその製造方法に関する。
大面積基板の処理用機器は、液晶ディスプレイ(LCD)及びプラズマディスプレイパネル(PDP)をはじめとするフラットパネルディスプレイ、有機発光ダイオード(OLED)並びにソーラーパネルの製造においてかなりの投資となってきている。LCD、PDP、OLED又はソーラーパネルを製造するための大面積基板は、ガラス又はポリマーワークピースであってよい。
本発明の一実施形態は、プラズマリアクタに用いるための基板サポートであって、プラズマリアクタの電極となるよう構成された導電性本体を含み、導電性本体が、大面積基板をサポートし、大面積基板に熱エネルギーを提供するために構成された上面を有し、上面が、大面積基板の裏面と接触するために構成された複数の隆起領域を有し、複数の隆起領域が、上面の表面積の約50%未満を占めている基板サポートを提供する。
隆起領域201は、上面134全体に均一に分配されていてもよい。一実施形態において、隆起領域201は、上面134に形成されたアイランドの配列であってよい。一実施形態において、隆起領域201は、図4に示すような、六方稠密配列の複数のアイランドであってもよい。図4を参照すると、導電性本体124の上面134の一実施形態は、そこに形成された丸いアイランド203の配列を有していてよい。各アイランド203は、基板との接触領域となるように構成された平坦な領域204を有している。一実施形態において、平坦な領域204の直径は0.5mm未満である。各アイランド203は、基板のスクラッチを排除するために、平滑な表面を有していてよい。
導電性本体124の上面134は、例えば、化学エッチング、電解研磨、テクスチャリング、研削、吹き付け加工及びローレット切り等による様々なやり方で作製してよい。
次に、パターン化されたフォトレジスト210を備えた導電性本体124を、化学エッチング溶液に浸漬して、図5Cに示すような、導電性本体124の露光部分に複数の低部領域212を形成する。
前記は本発明の実施形態を対象としているが、本発明の他の更なる実施形態はその基本的な範囲から逸脱することなく創作することができ、その範囲は特許請求の範囲に基づいて定められる。
Claims (20)
- プラズマリアクタに用いるための基板サポートであって、
前記プラズマリアクタの電極となるよう構成された導電性本体を含み、前記導電性本体が、大面積基板をサポートし、前記大面積基板に熱エネルギーを提供するために構成された上面を有し、前記上面が前記大面積基板の裏面と接触するために構成された複数の隆起領域を有し、前記複数の隆起領域が前記上面の表面積の約50%未満を占めている基板サポート。 - 前記複数の隆起領域が十分に平滑で、前記大面積基板の前記裏面がスクラッチによる損傷を受けないようなものである請求項1記載の基板サポート。
- 前記複数の隆起領域の高さが、約0.001インチ〜約0.002インチである請求項1記載の基板サポート。
- 前記複数の隆起領域が、前記上面に均一に分配された隆起アイランドの配列である請求項1記載の基板サポート。
- 隣接する隆起アイランド間の距離が約0.5mm〜約3mmである請求項4記載の基板サポート。
- 隣接する隆起アイランド間の距離が約1mm〜約2mmである請求項4記載の基板サポート。
- 前記複数の隆起アイランドが夫々0.5mm未満の直径の円形接触領域を有する請求項4記載の基板サポート。
- 前記複数の隆起アイランドが化学エッチングにより形成される請求項1記載の基板サポート。
- 前記導電性本体に封入された発熱体を含む請求項1記載の基板サポート。
- 前記導電性本体の前記上面をカバーする絶縁皮膜を含む請求項1記載の基板サポート。
- 前記導電性本体がアルミニウムから作製されている請求項1記載の基板サポート。
- 大面積基板を処理するための基板サポートであって、
前記大面積基板をサポートし、前記大面積基板に容量性デカップリングを提供するように構成された導電性本体を含み、前記導電性本体が、上面に均一に分配され、前記上面の複数の低部領域に連続して接続された複数の隆起領域を有し、前記複数の隆起領域が前記大面積基板の裏面と実質的に接触するために構成されていて、前記複数の隆起領域が、前記上面の合計表面積の約50%未満を占めており、
前記導電性本体に封入された発熱体とを含む基板サポート。 - 1つ以上の強化要素を含む請求項12記載の基板サポート。
- 前記上面をカバーする絶縁皮膜を含む請求項12記載の基板サポート。
- 前記複数の隆起領域及び前記複数の低部領域が、化学エッチング、電解研磨、研削、テクスチャリング及びローレット切りのうち1つから形成される請求項12記載の基板サポート。
- 前記複数の低部領域に対して前記複数の隆起領域の高さが、約0.001インチ〜約0.002インチの間である請求項12記載の基板サポート。
- 前記複数の隆起領域が夫々、0.5mm未満の直径の円形である請求項12記載の基板サポート。
- プラズマチャンバにおいて大面積基板を処理する方法であって、
導電性本体を有する基板サポートを提供する工程を含み、前記導電性本体が大面積基板をサポートし、前記大面積基板に熱エネルギーを提供するために構成された上面を有し、前記上面が前記大面積基板の裏面と接触するために構成された複数の隆起領域を有し、前記複数の隆起領域が前記上面の表面積の約50%未満を占めており、
前記基板サポートの上面に前記大面積基板を配置する工程と、
前記プラズマチャンバに前駆体ガスを導入する工程と、
前記導電性本体と前記導電性本体に平行な電極の間でRF電力を印加することにより前記前駆体ガスのプラズマを生成する工程とを含む方法。 - 前記導電性本体に埋め込まれた発熱体を用いて前記大面積基板を加熱する工程を含む請求項18記載の方法。
- 前記基板を提供する工程が、前記導電性本体の前記上面をエッチングして、前記複数の隆起領域を形成する工程を含む請求項18記載の方法。
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US11/566,113 US20080131622A1 (en) | 2006-12-01 | 2006-12-01 | Plasma reactor substrate mounting surface texturing |
US11/566113 | 2006-12-01 |
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JP2008138283A5 JP2008138283A5 (ja) | 2010-12-09 |
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EP (1) | EP1928017B1 (ja) |
JP (1) | JP5578762B2 (ja) |
KR (1) | KR100939588B1 (ja) |
CN (1) | CN101191203B (ja) |
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US20080131622A1 (en) * | 2006-12-01 | 2008-06-05 | White John M | Plasma reactor substrate mounting surface texturing |
US7964430B2 (en) * | 2007-05-23 | 2011-06-21 | Applied Materials, Inc. | Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications |
US20080289686A1 (en) * | 2007-05-23 | 2008-11-27 | Tae Kyung Won | Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications |
KR101588566B1 (ko) * | 2008-03-20 | 2016-01-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 롤-성형 표면을 갖는 서셉터 및 이를 제조하기 위한 방법 |
US20100059182A1 (en) * | 2008-09-05 | 2010-03-11 | Jusung Engineering Co., Ltd. | Substrate processing apparatus |
US20100180426A1 (en) * | 2009-01-21 | 2010-07-22 | Applied Materials, Inc. | Particle reduction treatment for gas delivery system |
US20120154974A1 (en) * | 2010-12-16 | 2012-06-21 | Applied Materials, Inc. | High efficiency electrostatic chuck assembly for semiconductor wafer processing |
CN103908934A (zh) * | 2013-11-28 | 2014-07-09 | 大连隆星新材料有限公司 | 聚乙烯蜡微粉制备装置 |
CN111801624A (zh) * | 2018-04-17 | 2020-10-20 | 应用材料公司 | 将表面纹理化而不使用喷砂 |
CN110349828B (zh) * | 2019-06-20 | 2021-12-03 | Tcl华星光电技术有限公司 | 干蚀刻设备 |
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- 2007-10-25 KR KR1020070107664A patent/KR100939588B1/ko active IP Right Grant
- 2007-10-25 TW TW096140130A patent/TWI354349B/zh not_active IP Right Cessation
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- 2007-10-26 CN CN2007101653541A patent/CN101191203B/zh not_active Expired - Fee Related
- 2007-10-26 DE DE602007006397T patent/DE602007006397D1/de active Active
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Publication number | Publication date |
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TW200828493A (en) | 2008-07-01 |
TWI354349B (en) | 2011-12-11 |
US20100144160A1 (en) | 2010-06-10 |
KR100939588B1 (ko) | 2010-02-01 |
DE602007006397D1 (de) | 2010-06-24 |
CN101191203A (zh) | 2008-06-04 |
CN101191203B (zh) | 2010-12-01 |
KR20080050304A (ko) | 2008-06-05 |
US20080131622A1 (en) | 2008-06-05 |
EP1928017B1 (en) | 2010-05-12 |
JP5578762B2 (ja) | 2014-08-27 |
EP1928017A1 (en) | 2008-06-04 |
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