TWI354349B - Plasma reactor substrate mounting surface texturin - Google Patents

Plasma reactor substrate mounting surface texturin Download PDF

Info

Publication number
TWI354349B
TWI354349B TW096140130A TW96140130A TWI354349B TW I354349 B TWI354349 B TW I354349B TW 096140130 A TW096140130 A TW 096140130A TW 96140130 A TW96140130 A TW 96140130A TW I354349 B TWI354349 B TW I354349B
Authority
TW
Taiwan
Prior art keywords
rti
top surface
substrate
substrate support
conductive body
Prior art date
Application number
TW096140130A
Other languages
English (en)
Other versions
TW200828493A (en
Inventor
John M White
Zhifei Ye
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200828493A publication Critical patent/TW200828493A/zh
Application granted granted Critical
Publication of TWI354349B publication Critical patent/TWI354349B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/6875—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Description

1354349
撐件，其包括用於支撐大面積基板並且爲大面積基 電容去耦的導電主體，其中該導電主體具有多個 域，該等突起區域均勻分佈在頂面上並且與頂面上 下陷區域連績連接，該等突起區域用於實質接觸大 板的背面，且該等突起區域佔據小於約50%的頂 積’以及在該導電主體中包埋有一加熱元件。 本發明的另一實施例提供在電漿室中處理大面 的方法’該方法包括：提供具有導電主體的基板支 其中導電主體具有用於支撐大面積基板並且爲大面 提供熱能的頂面，該頂面具有用於接觸大面積基板 多個突起區域，並且該等突起區域佔據小於約50% 表面積；將大面積基板放置在基板支撐件的頂面上 驅物氣體5丨入電漿室；在導電主體和與該導電主體 電極之間施加RF功率以産生前驅物氣體的電漿。 【實施方式】 本發明涉及爲處理基板提供必要電容去耦的基 件和製備該基板支撐件的方法。特別是，本發明的 撐件減少基板和基板支撐件之間的靜電，並使通常 板受損的電楽困（plasmoid)減至最小。雖然不希望 限制，可以認爲，在大面積基板之金屬線上方的強 加熱大面積基板，因而在大面積基板中引起不均 力。大面積基板中的熱應力可能積累到夠大以致使 基板破裂。一旦不導電的大面積基板破裂’將使導 板提供 突起區 的多個 面積基 面表面 積基板 撐件， 積基板 背面的 的頂面 ;將前 平行的 板支撐 基板支 會讓基 受理論 電漿會 勻熱應 大面積 電基板 (S ) 8 1354349 嵌入至少一第一加固件116β 熱元件132側邊且在第-加固件 電主體124中在加 叶116相反位置虐吟署_馇 二加固件166。加固件116和166可 β置一第 他加固材料構成》在一實施例中， '陶瓷或其 化銘織維構成。或者，加固件"件116和166由氧 維结合氧化铭顆粒、碳切纖維166可以由氧化銘纖 址卞 "氧化矽纖維或相似材料 構成。加固件U…“可以包括鬆散材料或可以…
如平板等預製形狀。或者，加固件U6和166可以… 他形狀和幾何結構。-般而言，&固件"…“具有少 許孔隙，以允許鋁在下述的鑄造製程期間能夠滲入構件 116' 166 »
將設置在支撐件组件138中的諸如電極等加熱元件 132連接到電源130，加熱元件132可以將支撐件組件138 和放置其上的基板140可控制地加熱到預期溫度。典型 地，加熱元件132將基板140保持在大約15〇<^到至少大 约460 °C之間的均勻溫度》加熱元件132通常與導電主鱧 124電性絕緣。 導電主禮124具有一下方面126和用於支撐基板14〇 且爲基板14〇提供熱能的一頂面〗34。可以粗糙化該頂面 134’以在頂面134和基板140之間形成多個間隔坑205(如 第3圖所示）°間隔坑205減少導電主體丨24和基板14〇 之間的電容柄合。在一實施例中，頂面134可以是用於在 處理期間與基板140部分接觸的非平坦表面。 下方面126具有連接到下方面的杆端蓋ι44。杆端蓋
12 1241354349 第5A圖描述將一層光阳森丨_ 疋阻劑210塗覆在導電主體 上。然後透過一光罩將光随劑210遇敦· 阳ζιυ嗓蕗於uv光下以 阻劑210中形成圖案211。 第5Β圖描述在已經顯影光阻劑21〇之後，具有 劑210的導電主體124。
然後將具有圖案化光阻 學蝕刻溶液尹，以在導電主 多個下陷區域212，如第5C 劑210的導電主體124浸 趙124曝露出來的部分上 圖所示。 第5D圖描述在已經去除本畑农丨〇 艾除光阻劑21〇之後的導電 124»多個島狀物213保持從吝柄 打代夕個下陷區域212突起
態。在一實施例令，每個島 214,該接觸區域214是導電 到蝕刻溶液的部分。接觸區 由於每個島狀物213上的接 趙1 24之原始頂面的特徵， 個接觸區域214可如同導電 板的方式來均勻支撐基板。 第6Α-Β圖示意性缯示 禮件組件138中製造出導電 光方法。在電解拋光槽222 在導電主逋124鄰近處。陰 成有陰極圖案。在導電主體 狀物213可以具有接觸 主趙124之原始頂面沒有 域214在處理期間接觸基 觸區域214可以保留了導 例如平坦度和粗糙度，因 主趙124之非蝕刻頂面支 出用於利用電解拋光在基 主體124之頂面134的電 内以平行方式將陰極220 極220在圏案化表面221 124和陰極220之間施加 224 ’以提供電能進行電解抛光反應。第6Β圖繪示由 化學反應中電場在突出表面處比凹陷表面處具有更高 在光 光阻 入化 形成 主體 的狀 區域 接觸 板。 電主 此每 撐基 板支 解抛 設置 上形 電源 於電 的強 16 < S ) 1354349
150 舉 升銷 160 第 - 末 端 164 第 二末 端 166 第 二 加 固 件 182 尚 臺 184 接 地 回 路 構件 201 突 起區 域 202 下 陷 區 域 203 圓 形島 狀 物 204 平 坦 區 域 205 間 隔坑 210 光 阻 211 圖 案 212 下 陷 區 域 213 島 狀物 214 接 觸 區 域 220 陰 極 221 陰 極 圖 案 222 電 解拋 光 槽 223 互 補 圖 案 224 電 源
19

Claims (1)

1354349 辦· 4. 2 9 年月曰修正替換f Ιψν j 十、申請專利範圍 1. 一種在一電漿反應器中使用的基板支撐件，包括： 一配置以作爲該電漿反應器之一電極的導電主體，其 中該導電主體具有一配置以支撐一大面積基板且爲該大面 積基板提供熱能的頂面，該頂面具有配置以接觸該大面積 基板之一背面的多個突起區域，該多個突起區域係跨越該 頂面而均勻地分佈，並且該多個突起區域佔據小於約5 0 % 的頂面表面積。 2. 如申請專利範圍第1項所述的基板支撐件，其中該多個 突起區域足夠光滑，使得該大面積基板的該背面不會因受 到刮擦而損傷。 3. 如申請專利範圍第1項所述的基板支撐件，其中該多個 突起區域的高度介於約0.001英吋至約0.002英吋之間。 4. 如申請專利範圍第1項所述的基板支撐件，其中該多個 突起區域是跨越該頂面而均勻地分佈的一突起島狀物陣 列。 5.如申請專利範圍第4項所述的基板支撐件，其中相鄰突 起島狀物之間的距離為約0 · 5毫米至約3毫米之間。 20 1354349 100. 4. 2 9_ 年月日修正替換頁 6. 如申請專利範圍第4項所述的基板支撐件，其中相鄰突 起島狀物之間的距離為約1毫米至約2毫米之間。 7. 如申請專利範圍第4項所述的基板支撐件，其中該多個 突起島狀物各自為具有直徑小於0.5毫米的一圓形接觸區 域。 8. 如申請專利範圍第1項所述的基板支撐件，其中該多個 突起區域由化學蝕刻形成。 9. 如申請專利範圍第1項所述的基板支撐件，更包括一包 埋在該導電主體中的加熱元件。 10. 如申請專利範圍第1項所述的基板支撐件，更包括一 覆蓋該導電主體之該頂面的絕緣塗層。 11. 如申請專利範圍第1項所述的基板支撐件，其中該導 電主體由鋁製成。 12. —種用於處理一大面積基板的基板支撐件，包括： 一導電主體，配置以支撐該大面積基板並且爲該大面 積基板提供電容去耦，其中該導電主體具有在一頂面上均 勻地分佈且與該頂面上多個下陷區域連續連接的多個突起 21 1354349 辦 A. 2 9_ 年月日修正替換頁 區域，該多個突起區域係配置以實質接觸該大面積基板的 一背面，且該多個突起區域佔據該頂面小於約5 0 %的總表 面積；以及 一加熱元件，其包埋在該導電主體内。 13. 如申請專利範圍第12項所述的基板支撐件，更包括一 個或多個加固件。 14. 如申請專利範圍第12項所述的基板支撐件，更包括一 覆蓋該頂面的絕緣塗層。 15. 如申請專利範圍第12項所述的基板支撐件，其中該多 個突起區域和該多個下陷區域是由化學蝕刻、電解抛光、 研磨、紋理化和壓花其中一種所形成。 16. 如申請專利範圍第12項所述的基板支撐件，其中該多 個突起區域相對該多個下陷區域的一高度係介於約 0.001 英吋至約0.002英吋之間。 17. 如申請專利範圍第12項所述的基板支撐件，其中該多 個突起區域每一者具有直徑小於0.5毫米的圓形形狀。 18. —種用於在一電漿室中處理一大面積基板的方法，包 22 1354349 » m ^ 9_ 年月日修正替換頁 括： 提供一具有一導電主體的基板支撐件，其t該導電主 體具有一配置以支撐一大面積基板並且爲該大面積基板提 供熱能的頂面，該頂面具有配置以接觸該大面積基板之一 背面的多個突起區域，該多個突起區域係跨越該頂面而均 勻地分佈，且該多個突起區域佔據小於約50%的該頂面之 表面積； 將該大面積基板放置在該基板支撐件的該頂面上； 將一前驅物氣體引入到該電漿室中；以及 在該導電主體和與該導電主體平行的一電極之間施加 一 RF功率，以産生該前驅物氣體的一電漿。 19. 如申請專利範圍第18項所述的方法，更包括使用嵌入 該導電主體中的一加熱元件來加熱該大面積基板。 20. 如申請專利範圍第18項所述的方法，其中提供該基板 支撐件的步驟包括蝕刻該導電主體的該頂面，以産生該多 個突起區域。 23
TW096140130A 2006-12-01 2007-10-25 Plasma reactor substrate mounting surface texturin TWI354349B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/566,113 US20080131622A1 (en) 2006-12-01 2006-12-01 Plasma reactor substrate mounting surface texturing

Publications (2)

Publication Number Publication Date
TW200828493A TW200828493A (en) 2008-07-01
TWI354349B true TWI354349B (en) 2011-12-11

Family

ID=39232835

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096140130A TWI354349B (en) 2006-12-01 2007-10-25 Plasma reactor substrate mounting surface texturin

Country Status (7)

Country Link
US (2) US20080131622A1 (zh)
EP (1) EP1928017B1 (zh)
JP (1) JP5578762B2 (zh)
KR (1) KR100939588B1 (zh)
CN (1) CN101191203B (zh)
DE (1) DE602007006397D1 (zh)
TW (1) TWI354349B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing
US20080289686A1 (en) * 2007-05-23 2008-11-27 Tae Kyung Won Method and apparatus for depositing a silicon layer on a transmitting conductive oxide layer suitable for use in solar cell applications
US7964430B2 (en) * 2007-05-23 2011-06-21 Applied Materials, Inc. Silicon layer on a laser transparent conductive oxide layer suitable for use in solar cell applications
KR101588566B1 (ko) * 2008-03-20 2016-01-26 어플라이드 머티어리얼스, 인코포레이티드 롤-성형 표면을 갖는 서셉터 및 이를 제조하기 위한 방법
US20100059182A1 (en) * 2008-09-05 2010-03-11 Jusung Engineering Co., Ltd. Substrate processing apparatus
US20100180426A1 (en) * 2009-01-21 2010-07-22 Applied Materials, Inc. Particle reduction treatment for gas delivery system
US20120154974A1 (en) * 2010-12-16 2012-06-21 Applied Materials, Inc. High efficiency electrostatic chuck assembly for semiconductor wafer processing
CN103908934A (zh) * 2013-11-28 2014-07-09 大连隆星新材料有限公司 聚乙烯蜡微粉制备装置
KR20230046324A (ko) * 2018-04-17 2023-04-05 어플라이드 머티어리얼스, 인코포레이티드 비드 블라스팅을 이용하지 않는 표면의 텍스처라이징
CN110349828B (zh) * 2019-06-20 2021-12-03 Tcl华星光电技术有限公司 干蚀刻设备

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4801785A (en) * 1986-01-14 1989-01-31 Raychem Corporation Electrical devices
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
US5096536A (en) * 1990-06-12 1992-03-17 Micron Technology, Inc. Method and apparatus useful in the plasma etching of semiconductor materials
US4974369A (en) * 1990-06-28 1990-12-04 William Dixon Two-dimensionally grooved sanding pad
US5104514A (en) * 1991-05-16 1992-04-14 The United States Of America As Represented By The Secretary Of The Navy Protective coating system for aluminum
US5384682A (en) * 1993-03-22 1995-01-24 Toto Ltd. Electrostatic chuck
US5581874A (en) * 1994-03-28 1996-12-10 Tokyo Electron Limited Method of forming a bonding portion
US5531835A (en) * 1994-05-18 1996-07-02 Applied Materials, Inc. Patterned susceptor to reduce electrostatic force in a CVD chamber
US5548470A (en) * 1994-07-19 1996-08-20 International Business Machines Corporation Characterization, modeling, and design of an electrostatic chuck with improved wafer temperature uniformity
US5583736A (en) * 1994-11-17 1996-12-10 The United States Of America As Represented By The Department Of Energy Micromachined silicon electrostatic chuck
US5844205A (en) * 1996-04-19 1998-12-01 Applied Komatsu Technology, Inc. Heated substrate support structure
US6055927A (en) * 1997-01-14 2000-05-02 Applied Komatsu Technology, Inc. Apparatus and method for white powder reduction in silicon nitride deposition using remote plasma source cleaning technology
CH692520A5 (de) * 1997-04-24 2002-07-15 Mettler Toledo Gmbh Verfahren zur Herstellung einer umlaufenden mediumsdichten Verbindung zwischen koaxialen Glasrohren unter Einschluss einer elektrischen Leiterbahn und elektrochemischer Sensor damit.
JP3160229B2 (ja) * 1997-06-06 2001-04-25 日本エー・エス・エム株式会社 プラズマｃｖｄ装置用サセプタ及びその製造方法
US6024044A (en) * 1997-10-09 2000-02-15 Applied Komatsu Technology, Inc. Dual frequency excitation of plasma for film deposition
JP3283459B2 (ja) * 1997-12-17 2002-05-20 日本エー・エス・エム株式会社 半導体処理用の基板保持装置
US6064031A (en) * 1998-03-20 2000-05-16 Mcdonnell Douglas Corporation Selective metal matrix composite reinforcement by laser deposition
FR2783970B1 (fr) * 1998-09-25 2000-11-03 Commissariat Energie Atomique Dispositif autorisant le traitement d'un substrat dans une machine prevue pour traiter de plus grands substrats et systeme de montage d'un substrat dans ce dispositif
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
JP3911902B2 (ja) * 1999-04-16 2007-05-09 東京エレクトロン株式会社 処理装置及び金属部品の表面処理方法
JP3293801B2 (ja) * 1999-06-22 2002-06-17 九州日本電気株式会社 枚葉式プラズマアッシング装置
US6423175B1 (en) * 1999-10-06 2002-07-23 Taiwan Semiconductor Manufacturing Co., Ltd Apparatus and method for reducing particle contamination in an etcher
US6196001B1 (en) * 1999-10-12 2001-03-06 Alliedsignal Inc. Environment controlled WIP cart
TW473792B (en) * 2000-01-20 2002-01-21 Ngk Insulators Ltd Electrostatic chuck
DE50104178D1 (de) * 2000-06-22 2004-11-25 Unaxis Balzers Ag Beschichtungsanlage für scheibenförmige Werkstücke
US7094670B2 (en) * 2000-08-11 2006-08-22 Applied Materials, Inc. Plasma immersion ion implantation process
SG106588A1 (en) * 2000-10-10 2004-10-29 Inst Data Storage Method for producing thin film magnetic devices having increased orientation ratio
JP2002134487A (ja) * 2000-10-25 2002-05-10 Hitachi Ltd 半導体装置の製造方法
JP3758979B2 (ja) * 2001-02-27 2006-03-22 京セラ株式会社 静電チャック及び処理装置
JP2002334921A (ja) * 2001-05-10 2002-11-22 Matsushita Electric Ind Co Ltd プラズマ処理装置
US6510888B1 (en) * 2001-08-01 2003-01-28 Applied Materials, Inc. Substrate support and method of fabricating the same
JP4040423B2 (ja) * 2002-10-16 2008-01-30 キヤノン株式会社 基板保持装置
KR20040036984A (ko) 2002-10-25 2004-05-04 엘지.필립스 엘시디 주식회사 플라즈마 에칭챔버의 아크발생 방지구조
US8372205B2 (en) * 2003-05-09 2013-02-12 Applied Materials, Inc. Reducing electrostatic charge by roughening the susceptor
US20040221959A1 (en) * 2003-05-09 2004-11-11 Applied Materials, Inc. Anodized substrate support
JP2005018992A (ja) 2003-06-23 2005-01-20 Ibiden Co Ltd プラズマ発生装置用電極埋設部材
US7375946B2 (en) * 2004-08-16 2008-05-20 Applied Materials, Inc. Method and apparatus for dechucking a substrate
US7429410B2 (en) * 2004-09-20 2008-09-30 Applied Materials, Inc. Diffuser gravity support
US8173228B2 (en) * 2006-01-27 2012-05-08 Applied Materials, Inc. Particle reduction on surfaces of chemical vapor deposition processing apparatus
US20080131622A1 (en) * 2006-12-01 2008-06-05 White John M Plasma reactor substrate mounting surface texturing

Also Published As

Publication number Publication date
CN101191203B (zh) 2010-12-01
EP1928017B1 (en) 2010-05-12
JP5578762B2 (ja) 2014-08-27
KR100939588B1 (ko) 2010-02-01
US20100144160A1 (en) 2010-06-10
US20080131622A1 (en) 2008-06-05
DE602007006397D1 (de) 2010-06-24
KR20080050304A (ko) 2008-06-05
TW200828493A (en) 2008-07-01
EP1928017A1 (en) 2008-06-04
CN101191203A (zh) 2008-06-04
JP2008138283A (ja) 2008-06-19

Similar Documents

Publication Publication Date Title
TWI354349B (en) Plasma reactor substrate mounting surface texturin
JP6436089B2 (ja) 湾曲型格子の製造方法
JP2008138283A5 (zh)
TWI465123B (zh) 熱致發聲元件之製備方法
KR100976320B1 (ko) 정전척 및 정전척용 전극 시트
TWI375295B (en) Reducing electrostatic charge by roughening the susceptor
TW201139729A (en) Method and device for layer deposition
JP2003524304A (ja) 物体を均一加熱する装置
WO2019227940A1 (zh) 柔性显示装置的制作方法和柔性显示装置
TWI356453B (en) Plasma processing apparatus
TW201003815A (en) Apparatus for manufacturing semiconductor
JP4590764B2 (ja) ガスセンサ及びその製造方法
JP4961941B2 (ja) ワイヤグリッド偏光板およびその製造方法
CN113979402A (zh) 一种mems红外光源及其制备方法
TW200951244A (en) Susceptor with roll-formed surface and method for making same
US20080217819A1 (en) Micro/Nano-Pattern Film Contact Transfer Process
CN109343166A (zh) 基于多壁碳纳米管的微偏振片阵列及其制作方法
TW200528827A (en) Substrate supporting means having wire and apparatus using the same
KR100975637B1 (ko) 탄소나노튜브를 이용한 고효율 서셉터 및 그 제조방법
JP2011515854A5 (zh)
EA023966B1 (ru) Способ спекания
JP2010263124A (ja) Ｉｉｉ−ｖ族半導体光デバイスの製造方法
KR101403091B1 (ko) 나노 구조체를 구비한 소자의 제조방법
JP3616232B2 (ja) 加熱プレートとその製造方法
CN107385412A (zh) 一种复合薄膜的制备方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees