JP2006104575A5 - - Google Patents
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- Publication number
- JP2006104575A5 JP2006104575A5 JP2005274384A JP2005274384A JP2006104575A5 JP 2006104575 A5 JP2006104575 A5 JP 2006104575A5 JP 2005274384 A JP2005274384 A JP 2005274384A JP 2005274384 A JP2005274384 A JP 2005274384A JP 2006104575 A5 JP2006104575 A5 JP 2006104575A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate support
- high frequency
- chamber wall
- process chamber
- coupled
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims 19
- 238000000034 method Methods 0.000 claims 11
- 239000000463 material Substances 0.000 claims 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 229910052782 aluminium Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 239000011248 coating agent Substances 0.000 claims 4
- 238000000576 coating method Methods 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910001220 stainless steel Inorganic materials 0.000 claims 4
- 239000010935 stainless steel Substances 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- 238000009826 distribution Methods 0.000 claims 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims 2
- 239000011343 solid material Substances 0.000 claims 2
- 238000005219 brazing Methods 0.000 claims 1
- 238000005476 soldering Methods 0.000 claims 1
- 238000003466 welding Methods 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/946403 | 2004-09-21 | ||
| US10/946,403 US7534301B2 (en) | 2004-09-21 | 2004-09-21 | RF grounding of cathode in process chamber |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009112186A Division JP5037560B2 (ja) | 2004-09-21 | 2009-05-01 | プロセスチャンバのカソードの高周波接地 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2006104575A JP2006104575A (ja) | 2006-04-20 |
| JP2006104575A5 true JP2006104575A5 (enExample) | 2009-05-14 |
| JP5033319B2 JP5033319B2 (ja) | 2012-09-26 |
Family
ID=36072681
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2005274384A Expired - Fee Related JP5033319B2 (ja) | 2004-09-21 | 2005-09-21 | プラズマ強化化学気相成長装置 |
| JP2009112186A Expired - Fee Related JP5037560B2 (ja) | 2004-09-21 | 2009-05-01 | プロセスチャンバのカソードの高周波接地 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009112186A Expired - Fee Related JP5037560B2 (ja) | 2004-09-21 | 2009-05-01 | プロセスチャンバのカソードの高周波接地 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US7534301B2 (enExample) |
| JP (2) | JP5033319B2 (enExample) |
| KR (2) | KR101441892B1 (enExample) |
| CN (2) | CN102324367B (enExample) |
| TW (2) | TWI314759B (enExample) |
Families Citing this family (67)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8083853B2 (en) * | 2004-05-12 | 2011-12-27 | Applied Materials, Inc. | Plasma uniformity control by gas diffuser hole design |
| JP2006313313A (ja) | 2005-04-06 | 2006-11-16 | Sony Corp | 再生装置、設定切替方法および設定切替装置 |
| US7722778B2 (en) * | 2006-06-28 | 2010-05-25 | Lam Research Corporation | Methods and apparatus for sensing unconfinement in a plasma processing chamber |
| US8004293B2 (en) * | 2006-11-20 | 2011-08-23 | Applied Materials, Inc. | Plasma processing chamber with ground member integrity indicator and method for using the same |
| WO2008079742A2 (en) * | 2006-12-20 | 2008-07-03 | Applied Materials, Inc. | Prevention of film deposition on pecvd process chamber wall |
| US8381677B2 (en) * | 2006-12-20 | 2013-02-26 | Applied Materials, Inc. | Prevention of film deposition on PECVD process chamber wall |
| US7968469B2 (en) * | 2007-01-30 | 2011-06-28 | Applied Materials, Inc. | Method of processing a workpiece in a plasma reactor with variable height ground return path to control plasma ion density uniformity |
| US7959735B2 (en) * | 2007-02-08 | 2011-06-14 | Applied Materials, Inc. | Susceptor with insulative inserts |
| KR101374583B1 (ko) * | 2007-03-01 | 2014-03-17 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf 셔터 |
| JP4887202B2 (ja) * | 2007-04-17 | 2012-02-29 | 東京エレクトロン株式会社 | プラズマ処理装置及び高周波電流の短絡回路 |
| US7972470B2 (en) * | 2007-05-03 | 2011-07-05 | Applied Materials, Inc. | Asymmetric grounding of rectangular susceptor |
| US8597428B2 (en) * | 2007-12-12 | 2013-12-03 | Lam Research Corporation | Vacuum sealing radio frequency (RF) and low frequency conducting actuator |
| KR100929153B1 (ko) * | 2007-12-27 | 2009-12-01 | 세메스 주식회사 | 전원 전송부재 및 이의 제조 방법 |
| US20090255798A1 (en) * | 2008-04-12 | 2009-10-15 | Gaku Furuta | Method to prevent parasitic plasma generation in gas feedthru of large size pecvd chamber |
| WO2010042860A2 (en) * | 2008-10-09 | 2010-04-15 | Applied Materials, Inc. | Rf return path for large plasma processing chamber |
| US20100136261A1 (en) * | 2008-12-03 | 2010-06-03 | Applied Materials, Inc. | Modulation of rf returning straps for uniformity control |
| US8540844B2 (en) * | 2008-12-19 | 2013-09-24 | Lam Research Corporation | Plasma confinement structures in plasma processing systems |
| US8627783B2 (en) * | 2008-12-19 | 2014-01-14 | Lam Research Corporation | Combined wafer area pressure control and plasma confinement assembly |
| JP2010161316A (ja) * | 2009-01-09 | 2010-07-22 | Ulvac Japan Ltd | プラズマ処理装置 |
| CN102308675B (zh) * | 2009-02-04 | 2016-01-13 | 应用材料公司 | 用于等离子体工艺的接地回流路径 |
| US9758869B2 (en) * | 2009-05-13 | 2017-09-12 | Applied Materials, Inc. | Anodized showerhead |
| KR101081744B1 (ko) * | 2009-08-17 | 2011-11-09 | 주성엔지니어링(주) | 기판처리장치 |
| KR200476124Y1 (ko) * | 2009-09-29 | 2015-01-30 | 어플라이드 머티어리얼스, 인코포레이티드 | Rf전력공급 샤워헤드를 위한 편심 접지 복귀 |
| KR101127757B1 (ko) * | 2009-12-02 | 2012-03-23 | 주식회사 테스 | 서셉터 접지유닛, 이를 이용하여 서셉터 접지의 가변방법 및 이를 갖는 공정챔버 |
| KR101039524B1 (ko) | 2010-02-19 | 2011-06-09 | 주성엔지니어링(주) | 플라즈마 처리 장치 |
| TW201145440A (en) * | 2010-06-09 | 2011-12-16 | Global Material Science Co Ltd | Shadow frame and manufacturing method thereof |
| KR101103450B1 (ko) * | 2010-07-27 | 2012-01-09 | 주식회사 케이씨텍 | 기판 도금 장치 |
| TW201324818A (zh) * | 2011-10-21 | 2013-06-16 | Applied Materials Inc | 製造矽異質接面太陽能電池之方法與設備 |
| US9083182B2 (en) | 2011-11-21 | 2015-07-14 | Lam Research Corporation | Bypass capacitors for high voltage bias power in the mid frequency RF range |
| US8898889B2 (en) | 2011-11-22 | 2014-12-02 | Lam Research Corporation | Chuck assembly for plasma processing |
| US10586686B2 (en) | 2011-11-22 | 2020-03-10 | Law Research Corporation | Peripheral RF feed and symmetric RF return for symmetric RF delivery |
| US9263240B2 (en) * | 2011-11-22 | 2016-02-16 | Lam Research Corporation | Dual zone temperature control of upper electrodes |
| US9396908B2 (en) | 2011-11-22 | 2016-07-19 | Lam Research Corporation | Systems and methods for controlling a plasma edge region |
| CN104024477B (zh) * | 2011-11-23 | 2016-05-18 | 朗姆研究公司 | 多区域气体注入上电极系统 |
| WO2013078434A1 (en) * | 2011-11-24 | 2013-05-30 | Lam Research Corporation | Plasma processing chamber with flexible symmetric rf return strap |
| US20130160948A1 (en) * | 2011-12-23 | 2013-06-27 | Lam Research Corporation | Plasma Processing Devices With Corrosion Resistant Components |
| US9230779B2 (en) * | 2012-03-19 | 2016-01-05 | Lam Research Corporation | Methods and apparatus for correcting for non-uniformity in a plasma processing system |
| US8911588B2 (en) * | 2012-03-19 | 2014-12-16 | Lam Research Corporation | Methods and apparatus for selectively modifying RF current paths in a plasma processing system |
| US9340866B2 (en) | 2012-03-30 | 2016-05-17 | Applied Materials, Inc. | Substrate support with radio frequency (RF) return path |
| US9633823B2 (en) * | 2013-03-14 | 2017-04-25 | Cardinal Cg Company | Plasma emission monitor and process gas delivery system |
| WO2015116245A1 (en) * | 2014-01-30 | 2015-08-06 | Applied Materials, Inc. | Gas confiner assembly for eliminating shadow frame |
| CN104294206B (zh) * | 2014-10-09 | 2016-05-04 | 沈阳富创精密设备有限公司 | 一种半导体装备用抗高温蠕变接地基片的制备方法 |
| US10134615B2 (en) * | 2015-02-13 | 2018-11-20 | Applied Materials, Inc. | Substrate support with improved RF return |
| US20160348233A1 (en) * | 2015-05-29 | 2016-12-01 | Applied Materials, Inc. | Grounding of conductive mask for deposition processes |
| US20170365449A1 (en) * | 2016-06-21 | 2017-12-21 | Applied Materials, Inc. | Rf return strap shielding cover |
| KR102173212B1 (ko) * | 2016-06-24 | 2020-11-03 | 주식회사 원익아이피에스 | 기판처리장치 |
| JP6683575B2 (ja) * | 2016-09-01 | 2020-04-22 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| KR102399343B1 (ko) * | 2017-05-29 | 2022-05-19 | 삼성디스플레이 주식회사 | 화학기상 증착장치 |
| WO2019023636A1 (en) | 2017-07-28 | 2019-01-31 | Tokyo Electron Limited | SYSTEM AND METHOD FOR DEPOSITING THE BACK OF A SUBSTRATE |
| TWI704252B (zh) * | 2017-09-04 | 2020-09-11 | 台灣積體電路製造股份有限公司 | 升舉裝置、化學氣相沉積裝置及方法 |
| CN108103473B (zh) * | 2017-12-18 | 2020-04-24 | 沈阳拓荆科技有限公司 | 用于半导体处理腔体的遮蔽装置及其使用方法 |
| KR102523798B1 (ko) | 2018-02-09 | 2023-04-21 | 주성엔지니어링(주) | 마스크 홀더 및 이를 포함하는 기판처리장치 |
| US11434569B2 (en) * | 2018-05-25 | 2022-09-06 | Applied Materials, Inc. | Ground path systems for providing a shorter and symmetrical ground path |
| CN111326389B (zh) * | 2018-12-17 | 2023-06-16 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
| CN111326387B (zh) * | 2018-12-17 | 2023-04-21 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
| CN111326382B (zh) * | 2018-12-17 | 2023-07-18 | 中微半导体设备(上海)股份有限公司 | 一种电容耦合等离子体刻蚀设备 |
| US11270870B2 (en) * | 2019-04-02 | 2022-03-08 | Applied Materials, Inc. | Processing equipment component plating |
| US20220236007A1 (en) * | 2019-06-07 | 2022-07-28 | Pyrogenesis Canada Inc. | Non-water cooled consumable electrode vacuum arc furnace for continuous process |
| JP7733638B2 (ja) * | 2019-08-02 | 2025-09-03 | アプライド マテリアルズ インコーポレイテッド | 高周波電力リターン経路 |
| CN112447475B (zh) * | 2019-09-05 | 2023-09-29 | 中微半导体设备(上海)股份有限公司 | 一种具有柔性电介质薄片的等离子体处理装置 |
| US12354847B2 (en) * | 2020-03-12 | 2025-07-08 | Applied Materials, Inc. | Methods and apparatus for conductance liners in semiconductor process chambers |
| JP7407645B2 (ja) * | 2020-04-03 | 2024-01-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US11443921B2 (en) * | 2020-06-11 | 2022-09-13 | Applied Materials, Inc. | Radio frequency ground system and method |
| US11887884B2 (en) * | 2020-10-16 | 2024-01-30 | Applied Materials, Inc. | Pre-loaded bowl mechanism for providing a symmetric radio frequency return path |
| US11664247B2 (en) * | 2020-10-16 | 2023-05-30 | Applied Materials, Inc. | Dynamic interface for providing a symmetric radio frequency return path |
| JP7610034B2 (ja) * | 2021-04-01 | 2025-01-07 | アプライド マテリアルズ インコーポレイテッド | プラズマを使用した薄膜形成のグランドリターン |
| US12378669B2 (en) | 2022-01-28 | 2025-08-05 | Applied Materials, Inc. | Ground return for thin film formation using plasma |
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|---|---|---|---|---|
| US4998178A (en) | 1990-06-18 | 1991-03-05 | Minnesota Mining And Manufacturing Company | Adjustable, conductive body strap |
| US5275683A (en) * | 1991-10-24 | 1994-01-04 | Tokyo Electron Limited | Mount for supporting substrates and plasma processing apparatus using the same |
| KR100276093B1 (ko) * | 1992-10-19 | 2000-12-15 | 히가시 데쓰로 | 플라스마 에칭방법 |
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| US5790365A (en) * | 1996-07-31 | 1998-08-04 | Applied Materials, Inc. | Method and apparatus for releasing a workpiece from and electrostatic chuck |
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| JP3710081B2 (ja) * | 1997-11-30 | 2005-10-26 | アルプス電気株式会社 | プラズマ処理装置 |
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| US6773562B1 (en) | 1998-02-20 | 2004-08-10 | Applied Materials, Inc. | Shadow frame for substrate processing |
| US6197438B1 (en) * | 1998-03-11 | 2001-03-06 | Roger Faulkner | Foodware with ceramic food contacting surface |
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| US6221221B1 (en) * | 1998-11-16 | 2001-04-24 | Applied Materials, Inc. | Apparatus for providing RF return current path control in a semiconductor wafer processing system |
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| US6779481B2 (en) * | 2000-04-27 | 2004-08-24 | Tokyo Electron Limited | Electrical coupling between chamber parts in electronic device processing equipment |
| TW570856B (en) * | 2001-01-18 | 2004-01-11 | Fujitsu Ltd | Solder jointing system, solder jointing method, semiconductor device manufacturing method, and semiconductor device manufacturing system |
| KR100738837B1 (ko) * | 2001-02-13 | 2007-07-12 | 엘지.필립스 엘시디 주식회사 | 플라즈마화학증착 장치 |
| US6417626B1 (en) * | 2001-03-01 | 2002-07-09 | Tokyo Electron Limited | Immersed inductively—coupled plasma source |
| US20050189074A1 (en) * | 2002-11-08 | 2005-09-01 | Tokyo Electron Limited | Gas processing apparatus and method and computer storage medium storing program for controlling same |
| US6527912B2 (en) * | 2001-03-30 | 2003-03-04 | Lam Research Corporation | Stacked RF excitation coil for inductive plasma processor |
| US6652713B2 (en) | 2001-08-09 | 2003-11-25 | Applied Materials, Inc. | Pedestal with integral shield |
| US7100532B2 (en) | 2001-10-09 | 2006-09-05 | Plasma Control Systems, Llc | Plasma production device and method and RF driver circuit with adjustable duty cycle |
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| US6933442B2 (en) | 2003-02-12 | 2005-08-23 | Senior Industries, Inc. | Methods and apparatus to secure a ground strap assembly to an electrically conductive member |
| US6830624B2 (en) | 2003-05-02 | 2004-12-14 | Applied Materials, Inc. | Blocker plate by-pass for remote plasma clean |
| US7083702B2 (en) | 2003-06-12 | 2006-08-01 | Applied Materials, Inc. | RF current return path for a large area substrate plasma reactor |
| US7785672B2 (en) | 2004-04-20 | 2010-08-31 | Applied Materials, Inc. | Method of controlling the film properties of PECVD-deposited thin films |
| US7375946B2 (en) * | 2004-08-16 | 2008-05-20 | Applied Materials, Inc. | Method and apparatus for dechucking a substrate |
| US7429410B2 (en) | 2004-09-20 | 2008-09-30 | Applied Materials, Inc. | Diffuser gravity support |
-
2004
- 2004-09-21 US US10/946,403 patent/US7534301B2/en not_active Expired - Lifetime
-
2005
- 2005-07-27 TW TW094125453A patent/TWI314759B/zh not_active IP Right Cessation
- 2005-07-27 TW TW098113783A patent/TWI392017B/zh not_active IP Right Cessation
- 2005-09-09 CN CN201110192596.6A patent/CN102324367B/zh not_active Expired - Fee Related
- 2005-09-09 CN CN2005101036957A patent/CN1752281B/zh not_active Expired - Fee Related
- 2005-09-20 KR KR1020050087388A patent/KR101441892B1/ko not_active Expired - Fee Related
- 2005-09-21 JP JP2005274384A patent/JP5033319B2/ja not_active Expired - Fee Related
-
2009
- 2009-03-18 US US12/406,407 patent/US20090178617A1/en not_active Abandoned
- 2009-05-01 JP JP2009112186A patent/JP5037560B2/ja not_active Expired - Fee Related
- 2009-05-06 KR KR1020090039228A patent/KR101185908B1/ko not_active Expired - Fee Related
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