JP5027605B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5027605B2
JP5027605B2 JP2007246576A JP2007246576A JP5027605B2 JP 5027605 B2 JP5027605 B2 JP 5027605B2 JP 2007246576 A JP2007246576 A JP 2007246576A JP 2007246576 A JP2007246576 A JP 2007246576A JP 5027605 B2 JP5027605 B2 JP 5027605B2
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JP
Japan
Prior art keywords
semiconductor device
electrode pad
probe
probe region
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2007246576A
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English (en)
Japanese (ja)
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JP2009076808A5 (https=
JP2009076808A (ja
Inventor
昌男 高橋
康司 竹村
俊彦 阪下
忠昭 三村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP2007246576A priority Critical patent/JP5027605B2/ja
Priority to US12/208,595 priority patent/US7999256B2/en
Priority to CN2008101663001A priority patent/CN101399254B/zh
Publication of JP2009076808A publication Critical patent/JP2009076808A/ja
Publication of JP2009076808A5 publication Critical patent/JP2009076808A5/ja
Priority to US13/179,331 priority patent/US8338829B2/en
Application granted granted Critical
Publication of JP5027605B2 publication Critical patent/JP5027605B2/ja
Priority to US13/684,369 priority patent/US8669555B2/en
Active legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
JP2007246576A 2007-09-25 2007-09-25 半導体装置 Active JP5027605B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007246576A JP5027605B2 (ja) 2007-09-25 2007-09-25 半導体装置
US12/208,595 US7999256B2 (en) 2007-09-25 2008-09-11 Semiconductor device
CN2008101663001A CN101399254B (zh) 2007-09-25 2008-09-25 半导体装置
US13/179,331 US8338829B2 (en) 2007-09-25 2011-07-08 Semiconductor device
US13/684,369 US8669555B2 (en) 2007-09-25 2012-11-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007246576A JP5027605B2 (ja) 2007-09-25 2007-09-25 半導体装置

Publications (3)

Publication Number Publication Date
JP2009076808A JP2009076808A (ja) 2009-04-09
JP2009076808A5 JP2009076808A5 (https=) 2010-03-18
JP5027605B2 true JP5027605B2 (ja) 2012-09-19

Family

ID=40470671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007246576A Active JP5027605B2 (ja) 2007-09-25 2007-09-25 半導体装置

Country Status (3)

Country Link
US (3) US7999256B2 (https=)
JP (1) JP5027605B2 (https=)
CN (1) CN101399254B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003578A (ja) * 2009-06-16 2011-01-06 Renesas Electronics Corp 半導体装置
WO2020098623A1 (en) * 2018-11-12 2020-05-22 Changxin Memory Technologies, Inc. Semiconductor device, pad structure and fabrication method thereof
US11837623B2 (en) * 2020-10-12 2023-12-05 Raytheon Company Integrated circuit having vertical routing to bond pads

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3504421B2 (ja) * 1996-03-12 2004-03-08 株式会社ルネサステクノロジ 半導体装置
JP2781787B2 (ja) 1996-08-29 1998-07-30 日本電気アイシーマイコンシステム株式会社 半導体チップのボンディングパッド配置構成及びその最適化方法
KR100295637B1 (ko) * 1997-12-29 2001-10-24 김영환 반도체웨이퍼의구조및반도체칩의제조방법
JP2002016069A (ja) * 2000-06-29 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JP2002110751A (ja) * 2000-10-03 2002-04-12 Hitachi Ltd 半導体集積回路装置の検査装置および製造方法
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US7629689B2 (en) * 2004-01-22 2009-12-08 Kawasaki Microelectronics, Inc. Semiconductor integrated circuit having connection pads over active elements
JP4242336B2 (ja) 2004-02-05 2009-03-25 パナソニック株式会社 半導体装置
JP2005243907A (ja) * 2004-02-26 2005-09-08 Renesas Technology Corp 半導体装置
JP4803966B2 (ja) 2004-03-31 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
US7115985B2 (en) * 2004-09-30 2006-10-03 Agere Systems, Inc. Reinforced bond pad for a semiconductor device
US7241636B2 (en) * 2005-01-11 2007-07-10 Freescale Semiconductor, Inc. Method and apparatus for providing structural support for interconnect pad while allowing signal conductance
JP2006202866A (ja) 2005-01-19 2006-08-03 Nec Electronics Corp 半導体装置
JP2006210631A (ja) 2005-01-28 2006-08-10 Nec Electronics Corp 半導体装置
JP4585327B2 (ja) * 2005-02-08 2010-11-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5148825B2 (ja) * 2005-10-14 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP4951276B2 (ja) * 2006-05-29 2012-06-13 ルネサスエレクトロニクス株式会社 半導体チップおよび半導体装置
US7622364B2 (en) * 2006-08-18 2009-11-24 International Business Machines Corporation Bond pad for wafer and package for CMOS imager
US7397127B2 (en) * 2006-10-06 2008-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding and probing pad structures
US20080303177A1 (en) * 2007-06-06 2008-12-11 United Microelectronics Corp. Bonding pad structure

Also Published As

Publication number Publication date
US8338829B2 (en) 2012-12-25
CN101399254B (zh) 2013-03-20
CN101399254A (zh) 2009-04-01
US20090078935A1 (en) 2009-03-26
US7999256B2 (en) 2011-08-16
US20110266540A1 (en) 2011-11-03
JP2009076808A (ja) 2009-04-09
US8669555B2 (en) 2014-03-11
US20130075727A1 (en) 2013-03-28

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