CN101399254B - 半导体装置 - Google Patents

半导体装置 Download PDF

Info

Publication number
CN101399254B
CN101399254B CN2008101663001A CN200810166300A CN101399254B CN 101399254 B CN101399254 B CN 101399254B CN 2008101663001 A CN2008101663001 A CN 2008101663001A CN 200810166300 A CN200810166300 A CN 200810166300A CN 101399254 B CN101399254 B CN 101399254B
Authority
CN
China
Prior art keywords
mentioned
electrode pad
probe
semiconductor device
wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN2008101663001A
Other languages
English (en)
Chinese (zh)
Other versions
CN101399254A (zh
Inventor
高桥昌男
竹村康司
阪下俊彦
三村忠昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nuvoton Technology Corp Japan
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of CN101399254A publication Critical patent/CN101399254A/zh
Application granted granted Critical
Publication of CN101399254B publication Critical patent/CN101399254B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/27—Structural arrangements therefor
    • H10P74/273—Interconnections for measuring or testing, e.g. probe pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07553—Controlling the environment, e.g. atmosphere composition or temperature changes in shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07541—Controlling the environment, e.g. atmosphere composition or temperature
    • H10W72/07554—Controlling the environment, e.g. atmosphere composition or temperature changes in dispositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/547—Dispositions of multiple bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/921—Structures or relative sizes of bond pads
    • H10W72/923—Bond pads having multiple stacked layers
    • H10W72/9232—Bond pads having multiple stacked layers with additional elements interposed between layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Wire Bonding (AREA)
CN2008101663001A 2007-09-25 2008-09-25 半导体装置 Active CN101399254B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007246576 2007-09-25
JP2007246576A JP5027605B2 (ja) 2007-09-25 2007-09-25 半導体装置
JP2007-246576 2007-09-25

Publications (2)

Publication Number Publication Date
CN101399254A CN101399254A (zh) 2009-04-01
CN101399254B true CN101399254B (zh) 2013-03-20

Family

ID=40470671

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008101663001A Active CN101399254B (zh) 2007-09-25 2008-09-25 半导体装置

Country Status (3)

Country Link
US (3) US7999256B2 (https=)
JP (1) JP5027605B2 (https=)
CN (1) CN101399254B (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011003578A (ja) * 2009-06-16 2011-01-06 Renesas Electronics Corp 半導体装置
WO2020098623A1 (en) * 2018-11-12 2020-05-22 Changxin Memory Technologies, Inc. Semiconductor device, pad structure and fabrication method thereof
US11837623B2 (en) * 2020-10-12 2023-12-05 Raytheon Company Integrated circuit having vertical routing to bond pads

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1345086A (zh) * 2000-10-03 2002-04-17 株式会社日立制作所 半导体集成电路器件的制造方法及其测试设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3504421B2 (ja) * 1996-03-12 2004-03-08 株式会社ルネサステクノロジ 半導体装置
JP2781787B2 (ja) 1996-08-29 1998-07-30 日本電気アイシーマイコンシステム株式会社 半導体チップのボンディングパッド配置構成及びその最適化方法
KR100295637B1 (ko) * 1997-12-29 2001-10-24 김영환 반도체웨이퍼의구조및반도체칩의제조방법
JP2002016069A (ja) * 2000-06-29 2002-01-18 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6844631B2 (en) * 2002-03-13 2005-01-18 Freescale Semiconductor, Inc. Semiconductor device having a bond pad and method therefor
US7629689B2 (en) * 2004-01-22 2009-12-08 Kawasaki Microelectronics, Inc. Semiconductor integrated circuit having connection pads over active elements
JP4242336B2 (ja) 2004-02-05 2009-03-25 パナソニック株式会社 半導体装置
JP2005243907A (ja) * 2004-02-26 2005-09-08 Renesas Technology Corp 半導体装置
JP4803966B2 (ja) 2004-03-31 2011-10-26 ルネサスエレクトロニクス株式会社 半導体装置
US7115985B2 (en) * 2004-09-30 2006-10-03 Agere Systems, Inc. Reinforced bond pad for a semiconductor device
US7241636B2 (en) * 2005-01-11 2007-07-10 Freescale Semiconductor, Inc. Method and apparatus for providing structural support for interconnect pad while allowing signal conductance
JP2006202866A (ja) 2005-01-19 2006-08-03 Nec Electronics Corp 半導体装置
JP2006210631A (ja) 2005-01-28 2006-08-10 Nec Electronics Corp 半導体装置
JP4585327B2 (ja) * 2005-02-08 2010-11-24 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP5148825B2 (ja) * 2005-10-14 2013-02-20 ルネサスエレクトロニクス株式会社 半導体装置および半導体装置の製造方法
JP4951276B2 (ja) * 2006-05-29 2012-06-13 ルネサスエレクトロニクス株式会社 半導体チップおよび半導体装置
US7622364B2 (en) * 2006-08-18 2009-11-24 International Business Machines Corporation Bond pad for wafer and package for CMOS imager
US7397127B2 (en) * 2006-10-06 2008-07-08 Taiwan Semiconductor Manufacturing Co., Ltd. Bonding and probing pad structures
US20080303177A1 (en) * 2007-06-06 2008-12-11 United Microelectronics Corp. Bonding pad structure

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1345086A (zh) * 2000-10-03 2002-04-17 株式会社日立制作所 半导体集成电路器件的制造方法及其测试设备

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
JP特开平10-74790A 1998.03.17

Also Published As

Publication number Publication date
US8338829B2 (en) 2012-12-25
JP5027605B2 (ja) 2012-09-19
CN101399254A (zh) 2009-04-01
US20090078935A1 (en) 2009-03-26
US7999256B2 (en) 2011-08-16
US20110266540A1 (en) 2011-11-03
JP2009076808A (ja) 2009-04-09
US8669555B2 (en) 2014-03-11
US20130075727A1 (en) 2013-03-28

Similar Documents

Publication Publication Date Title
CN103311212B (zh) 半导体装置
CN100365809C (zh) 半导体装置
CN101339946A (zh) 半导体集成电路器件及其制造方法
CN101911284B (zh) 半导体器件及其制造方法
US20100283156A1 (en) Semiconductor device
JP2008258258A (ja) 半導体装置
JP2008527710A (ja) 信号導電効率を上げながら配線パッド用構造支持体を実現する方法及び装置
JP4803966B2 (ja) 半導体装置
JP2005322921A (ja) バンプテストのためのフリップチップ半導体パッケージ及びその製造方法
CN101399254B (zh) 半导体装置
CN100517687C (zh) 半导体器件及其制造方法
CN100517672C (zh) 半导体器件
US7335992B2 (en) Semiconductor apparatus with improved yield
JP2006210631A (ja) 半導体装置
JP2011119506A (ja) 半導体装置
CN101604673B (zh) 焊垫结构
JP4728628B2 (ja) 半導体装置
KR100630756B1 (ko) 개선된 패드 구조를 갖는 반도체 장치
JP2005064218A (ja) 半導体装置
JP4221019B2 (ja) 半導体装置
US20080078995A1 (en) Chip structure
JP2008066440A (ja) 半導体装置およびその製造方法
JP2006013497A (ja) 半導体ペレット及び半導体装置
CN101114626A (zh) 晶片结构
KR20070018669A (ko) 반도체장치

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right
TR01 Transfer of patent right

Effective date of registration: 20200604

Address after: Kyoto Japan

Patentee after: Panasonic semiconductor solutions Co.,Ltd.

Address before: Osaka Japan

Patentee before: Panasonic Corp.