JP4728628B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP4728628B2 JP4728628B2 JP2004338890A JP2004338890A JP4728628B2 JP 4728628 B2 JP4728628 B2 JP 4728628B2 JP 2004338890 A JP2004338890 A JP 2004338890A JP 2004338890 A JP2004338890 A JP 2004338890A JP 4728628 B2 JP4728628 B2 JP 4728628B2
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- Prior art keywords
- wiring
- electrode pad
- semiconductor device
- resistance
- semiconductor
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- 239000004065 semiconductor Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 claims description 21
- 238000001514 detection method Methods 0.000 claims description 19
- 238000011156 evaluation Methods 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 2
- 238000012854 evaluation process Methods 0.000 claims 1
- 230000006378 damage Effects 0.000 description 20
- 238000000034 method Methods 0.000 description 18
- 239000000523 sample Substances 0.000 description 14
- 230000035882 stress Effects 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 7
- 239000010931 gold Substances 0.000 description 7
- 229910052737 gold Inorganic materials 0.000 description 7
- 230000006866 deterioration Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 230000006355 external stress Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 241000270295 Serpentes Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
2 保護膜
3 層間絶縁膜
4,6 抵抗配線
5 能動回路
12,15,16 抵抗配線
40 半導体製品
41 コーナー領域
42 ダメージ検出用ダミーパッド
43 検出引き出しパッド
51 ウェハー
52 半導体チップ
53 スクライブ領域
54 半導体チップ端
55 チップ端
56 ダメージ検出用ダミーパッド
57 検出引き出しパッド
Claims (4)
- 半導体チップの電極パッド直下に、複数本の抵抗配線が配置された配線群パターンが形成され、
前記配線群パターンを形成する各抵抗配線は、前記電極パッド内の一定範囲ごとに抵抗値の差を有し、並列に接続された並列回路構成を形成していることを特徴とする半導体装置。 - 前記抵抗配線は、配線幅が異なることで抵抗値が異なる請求項1に記載の半導体装置。
- 前記抵抗配線の配線幅が0.01μm〜10μmである請求項1または2に記載の半導体装置。
- 前記配線群パターンを、半導体特性評価部に接続して特性不良を検出し、検出情報を評価工程および製品生産工程にフィードバックする請求項1〜3のいずれか1項に記載の半導体装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004338890A JP4728628B2 (ja) | 2004-11-24 | 2004-11-24 | 半導体装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004338890A JP4728628B2 (ja) | 2004-11-24 | 2004-11-24 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006148001A JP2006148001A (ja) | 2006-06-08 |
JP4728628B2 true JP4728628B2 (ja) | 2011-07-20 |
Family
ID=36627308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004338890A Active JP4728628B2 (ja) | 2004-11-24 | 2004-11-24 | 半導体装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP4728628B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4967924B2 (ja) * | 2007-08-22 | 2012-07-04 | セイコーエプソン株式会社 | 半導体装置 |
JP5540854B2 (ja) * | 2010-04-13 | 2014-07-02 | 株式会社デンソー | 半導体基板 |
JP5370250B2 (ja) * | 2010-04-20 | 2013-12-18 | 株式会社デンソー | 半導体装置の製造方法 |
JP2013157621A (ja) * | 2013-03-15 | 2013-08-15 | Seiko Epson Corp | 半導体装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326850A (ja) * | 1992-05-26 | 1993-12-10 | Nec Corp | 半導体装置 |
JPH0936191A (ja) * | 1995-07-14 | 1997-02-07 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2000040724A (ja) * | 1998-07-23 | 2000-02-08 | Nec Corp | 欠陥検出機能を有する半導体装置 |
JP2000269281A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 半導体装置およびそのテスト方法 |
JP2001148406A (ja) * | 1999-11-22 | 2001-05-29 | Toshiba Corp | 評価用半導体装置 |
JP2004014694A (ja) * | 2002-06-05 | 2004-01-15 | Denso Corp | 配線テストパターン及びその評価方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02304963A (ja) * | 1989-05-19 | 1990-12-18 | Nec Corp | 半導体集積回路装置 |
JPH0414847A (ja) * | 1990-05-08 | 1992-01-20 | Fujitsu Ltd | 半導体集積回路 |
-
2004
- 2004-11-24 JP JP2004338890A patent/JP4728628B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05326850A (ja) * | 1992-05-26 | 1993-12-10 | Nec Corp | 半導体装置 |
JPH0936191A (ja) * | 1995-07-14 | 1997-02-07 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2000040724A (ja) * | 1998-07-23 | 2000-02-08 | Nec Corp | 欠陥検出機能を有する半導体装置 |
JP2000269281A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | 半導体装置およびそのテスト方法 |
JP2001148406A (ja) * | 1999-11-22 | 2001-05-29 | Toshiba Corp | 評価用半導体装置 |
JP2004014694A (ja) * | 2002-06-05 | 2004-01-15 | Denso Corp | 配線テストパターン及びその評価方法 |
Also Published As
Publication number | Publication date |
---|---|
JP2006148001A (ja) | 2006-06-08 |
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