JP6231279B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6231279B2 JP6231279B2 JP2013009217A JP2013009217A JP6231279B2 JP 6231279 B2 JP6231279 B2 JP 6231279B2 JP 2013009217 A JP2013009217 A JP 2013009217A JP 2013009217 A JP2013009217 A JP 2013009217A JP 6231279 B2 JP6231279 B2 JP 6231279B2
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- 239000004065 semiconductor Substances 0.000 title claims description 36
- 239000000523 sample Substances 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 238000000691 measurement method Methods 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 238000005259 measurement Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
- H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Wire Bonding (AREA)
Description
以下、本発明の実施形態について図1から図4を参照しながら説明する。なお、以下の説明において、例えば回路素子配置禁止領域4と記述する場合は、回路素子配置禁止領域4a、4b、4cを含み、回路素子配置禁止領域4a、4b、4cと記述する場合は、個々の回路素子配置禁止領域を示すものとする。金属配線5、プローブ用パッド領域6、ボンディング用パッド領域7においても同様である。
次に図4を参照して、第2の実施形態について説明する。第1の実施形態と異なる点は、ウェハ状態のICチップ1間のスクライブ領域18の近傍に設けられたボンディング用パッド領域7の構成である。図4に示すように、スクライブ領域18は、ウェハ状態の半導体基板2上で隣接するICチップ1の回路素子配置領域3間にレイアウトされる。テスト素子領域19はスクライブ領域18を含むようにレイアウトされる。テスト素子領域19にはテスト素子16が配置される。ボンディング用パッド領域7は、その一部、若しくは、可能であれば全部がテスト素子領域19上に配置される。図4では、一例としてボンディング用パッド領域7の一部がテスト素子領域19上に配置されている状況を示している。スクライブ領域18とボンディング用パッド領域7との間の距離は、ダイシング時のダイシングブレード(図示せず)の位置合わせ精度を考慮して設定している。
以上、本発明の好適な実施形態について説明したが、本発明は上述した実施形態に限定されるものではなく、発明の要旨を逸脱しない範囲内で種々の変形、拡張を行うことができる。
半導体装置としては、マイコン、メモリ、車載用LSI、その他の半導体装置に適用することができる。
Claims (3)
- 半導体基板(2)と、前記半導体基板上に形成された回路素子とを有する半導体装置であって、
それぞれが独立して設けられ、相互に電気的に接続されたプローブ用パッド領域(6)と複数のボンディング用パッド領域(7)とを有し、
前記複数のボンディング用パッド領域は銅ワイヤによるボンディングの接続が可能な領域であり、
前記プローブ用パッド領域の下部には、前記半導体装置の組立後の電子回路動作に寄与する回路素子(13)が形成されており、前記複数のボンディング用パッド領域の下部には、前記半導体装置の組立後の電子回路動作に寄与する回路素子が形成されておらず、
前記プローブ用パッド領域と前記複数のボンディング用パッド領域は、前記半導体基板上方に設けられた同一でひと続きの配線(5)上に設けられており、前記配線上に設けられた絶縁膜(15)に形成された開口窓(17)によって区画されており、
前記同一の配線(5)上に銅ワイヤによるボンディングの接続がされることを特徴とする半導体装置。 - 前記プローブ用パッド領域は複数設けられており、かつ、前記半導体基板上方に設けられた同一でひと続きの配線(5)上に設けられていることを特徴とする、請求項1に記載の半導体装置。
- 複数設けられた前記プローブ用パッド領域は、4端子測定法におけるセンス端子又はフォース端子であることを特徴とする、請求項1又は2に記載の半導体装置。
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JP2013009217A JP6231279B2 (ja) | 2013-01-22 | 2013-01-22 | 半導体装置 |
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JP2013009217A JP6231279B2 (ja) | 2013-01-22 | 2013-01-22 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2014143236A JP2014143236A (ja) | 2014-08-07 |
JP6231279B2 true JP6231279B2 (ja) | 2017-11-15 |
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JP2013009217A Active JP6231279B2 (ja) | 2013-01-22 | 2013-01-22 | 半導体装置 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3422393A4 (en) | 2016-02-23 | 2020-02-05 | Renesas Electronics Corporation | SEMICONDUCTOR COMPONENT AND PRODUCTION METHOD THEREFOR |
JP6767789B2 (ja) * | 2016-06-29 | 2020-10-14 | ローム株式会社 | 半導体装置 |
JP2021150307A (ja) * | 2020-03-16 | 2021-09-27 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置、半導体装置の製造方法、及び電子機器 |
WO2024004876A1 (ja) * | 2022-06-30 | 2024-01-04 | ソニーセミコンダクタソリューションズ株式会社 | 半導体素子および積層構造体 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2536419B2 (ja) * | 1993-07-23 | 1996-09-18 | 日本電気株式会社 | 半導体集積回路装置 |
JP2005064218A (ja) * | 2003-08-12 | 2005-03-10 | Renesas Technology Corp | 半導体装置 |
JP4717523B2 (ja) * | 2005-06-13 | 2011-07-06 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
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