JP5010158B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
- Publication number
- JP5010158B2 JP5010158B2 JP2006064570A JP2006064570A JP5010158B2 JP 5010158 B2 JP5010158 B2 JP 5010158B2 JP 2006064570 A JP2006064570 A JP 2006064570A JP 2006064570 A JP2006064570 A JP 2006064570A JP 5010158 B2 JP5010158 B2 JP 5010158B2
- Authority
- JP
- Japan
- Prior art keywords
- type
- guard band
- internal circuit
- protection element
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/60—Protection against electrostatic charges or discharges, e.g. Faraday shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Description
2 ゲート電極
3 pウェル
4 nウェル
5 p型ガードバンド
6 n型ガードバンド
7 p型ドレイン領域
8 n型ドレイン領域
9 p型ソース領域
10 n型ソース領域
11 素子分離膜
101 保護素子
102 p型保護素子
103 n型保護素子
201 内部回路
202 p型内部回路素子
203 n型内部回路素子
Vin 入力端子
GND 設置端子
Vdd 電源端子
Claims (4)
- 保護素子と内部回路とを備える半導体装置において、
前記保護素子は、第1導電型の第1のガードバンドと、該第1のガードバンドによって区画される領域に形成され、第1のゲート電極、第2導電型の第1のドレイン領域及び第1のソース領域を有する第1のMOSトランジスタを備え、
前記内部回路は、第1導電型の第2のガードバンドと、該第2のガードバンドによって区画される領域に形成され、第2のゲート電極、第2導電型の第2のドレイン領域及び第2のソース領域を有する第2のMOSトランジスタを備え、
前記第1及び第2のドレイン領域は外部端子に接続されており、前記第1のガードバンドと前記第1のドレイン領域との最小距離は、前記第2のガードバンドと前記第2のドレイン領域との最小距離よりも短いことを特徴とする半導体装置。 - 前記第1のMOSトランジスタはNチャネル型であり、前記第1のゲート電極、前記第1のソース領域、及び前記第1のガードバンドは接地端子に接続されていることを特徴とする請求項1に記載の半導体装置。
- 前記第1のMOSトランジスタはPチャネル型であり、前記第1のゲート電極、前記第1のソース領域、及び前記第1のガードバンドは電源端子に接続されていることを特徴とする請求項1に記載の半導体装置。
- 前記外部端子は、入力端子、出力端子、入出力端子、又は電源端子のいずれかであることを特徴とする請求項1乃至請求項3のいずれかに記載の半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006064570A JP5010158B2 (ja) | 2006-03-09 | 2006-03-09 | 半導体装置 |
CNB2007100018202A CN100477215C (zh) | 2006-03-09 | 2007-01-05 | 半导体装置 |
TW096107791A TW200740304A (en) | 2006-03-09 | 2007-03-07 | Semiconductor device |
KR1020070022762A KR100796426B1 (ko) | 2006-03-09 | 2007-03-08 | 반도체 장치 |
US11/683,581 US7932561B2 (en) | 2006-03-09 | 2007-03-08 | Semiconductor apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006064570A JP5010158B2 (ja) | 2006-03-09 | 2006-03-09 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007242965A JP2007242965A (ja) | 2007-09-20 |
JP5010158B2 true JP5010158B2 (ja) | 2012-08-29 |
Family
ID=38478672
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006064570A Expired - Fee Related JP5010158B2 (ja) | 2006-03-09 | 2006-03-09 | 半導体装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7932561B2 (ja) |
JP (1) | JP5010158B2 (ja) |
KR (1) | KR100796426B1 (ja) |
CN (1) | CN100477215C (ja) |
TW (1) | TW200740304A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009289820A (ja) * | 2008-05-27 | 2009-12-10 | Mitsumi Electric Co Ltd | 半導体装置 |
JP2010080622A (ja) * | 2008-09-25 | 2010-04-08 | Panasonic Corp | 半導体集積回路 |
KR102248282B1 (ko) * | 2014-01-21 | 2021-05-06 | 삼성전자주식회사 | Cmos 반도체 장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH088308B2 (ja) * | 1989-12-26 | 1996-01-29 | 東芝マイクロエレクトロニクス株式会社 | 入出力保護装置 |
JP3199808B2 (ja) | 1991-05-14 | 2001-08-20 | セイコーインスツルメンツ株式会社 | 半導体集積回路装置 |
KR100470994B1 (ko) * | 1997-10-06 | 2005-07-07 | 삼성전자주식회사 | 반도체장치의정전기보호장치 |
JP3446569B2 (ja) | 1997-10-31 | 2003-09-16 | セイコーエプソン株式会社 | 半導体装置 |
JP3237110B2 (ja) * | 1998-03-24 | 2001-12-10 | 日本電気株式会社 | 半導体装置 |
JP3430080B2 (ja) * | 1999-10-08 | 2003-07-28 | Necエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
KR100313152B1 (ko) * | 1999-12-30 | 2001-11-07 | 박종섭 | 반도체소자의 입력단 |
KR20030000669A (ko) * | 2001-06-26 | 2003-01-06 | 주식회사 하이닉스반도체 | 반도체 소자 |
JP3888912B2 (ja) * | 2002-03-04 | 2007-03-07 | ローム株式会社 | 半導体集積回路装置 |
US20030202307A1 (en) * | 2002-04-26 | 2003-10-30 | Kei-Kang Hung | Semiconductor device with ESD protection |
-
2006
- 2006-03-09 JP JP2006064570A patent/JP5010158B2/ja not_active Expired - Fee Related
-
2007
- 2007-01-05 CN CNB2007100018202A patent/CN100477215C/zh not_active Expired - Fee Related
- 2007-03-07 TW TW096107791A patent/TW200740304A/zh not_active IP Right Cessation
- 2007-03-08 KR KR1020070022762A patent/KR100796426B1/ko not_active IP Right Cessation
- 2007-03-08 US US11/683,581 patent/US7932561B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
TWI358242B (ja) | 2012-02-11 |
US20070211399A1 (en) | 2007-09-13 |
CN100477215C (zh) | 2009-04-08 |
KR20070092637A (ko) | 2007-09-13 |
CN101034703A (zh) | 2007-09-12 |
US7932561B2 (en) | 2011-04-26 |
JP2007242965A (ja) | 2007-09-20 |
TW200740304A (en) | 2007-10-16 |
KR100796426B1 (ko) | 2008-01-21 |
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