JP5004792B2 - Cu−Mo基板およびその製造方法 - Google Patents
Cu−Mo基板およびその製造方法 Download PDFInfo
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- JP5004792B2 JP5004792B2 JP2007517832A JP2007517832A JP5004792B2 JP 5004792 B2 JP5004792 B2 JP 5004792B2 JP 2007517832 A JP2007517832 A JP 2007517832A JP 2007517832 A JP2007517832 A JP 2007517832A JP 5004792 B2 JP5004792 B2 JP 5004792B2
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- 239000000758 substrate Substances 0.000 title claims description 229
- 238000004519 manufacturing process Methods 0.000 title claims description 26
- 229910045601 alloy Inorganic materials 0.000 claims description 223
- 239000000956 alloy Substances 0.000 claims description 223
- 229910020888 Sn-Cu Inorganic materials 0.000 claims description 217
- 229910019204 Sn—Cu Inorganic materials 0.000 claims description 217
- 239000000463 material Substances 0.000 claims description 178
- 238000007747 plating Methods 0.000 claims description 104
- 238000000034 method Methods 0.000 claims description 89
- 239000004065 semiconductor Substances 0.000 claims description 35
- 238000002844 melting Methods 0.000 claims description 24
- 230000008018 melting Effects 0.000 claims description 24
- 230000017525 heat dissipation Effects 0.000 claims description 21
- 238000005304 joining Methods 0.000 claims description 7
- 239000010949 copper Substances 0.000 description 98
- 238000005219 brazing Methods 0.000 description 75
- 238000010438 heat treatment Methods 0.000 description 23
- 239000000919 ceramic Substances 0.000 description 18
- 229910017318 Mo—Ni Inorganic materials 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 239000011888 foil Substances 0.000 description 10
- 238000007772 electroless plating Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 229910000679 solder Inorganic materials 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 229910017944 Ag—Cu Inorganic materials 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 229910020816 Sn Pb Inorganic materials 0.000 description 4
- 229910020922 Sn-Pb Inorganic materials 0.000 description 4
- 229910008783 Sn—Pb Inorganic materials 0.000 description 4
- 230000003197 catalytic effect Effects 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 229910002677 Pd–Sn Inorganic materials 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000008280 blood Substances 0.000 description 2
- 210000004369 blood Anatomy 0.000 description 2
- 239000003638 chemical reducing agent Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000004453 electron probe microanalysis Methods 0.000 description 2
- 238000010828 elution Methods 0.000 description 2
- 238000005098 hot rolling Methods 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000008961 swelling Effects 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- 229910017755 Cu-Sn Inorganic materials 0.000 description 1
- 229910017770 Cu—Ag Inorganic materials 0.000 description 1
- 229910017927 Cu—Sn Inorganic materials 0.000 description 1
- 229910017315 Mo—Cu Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VMHLLURERBWHNL-UHFFFAOYSA-M Sodium acetate Chemical compound [Na+].CC([O-])=O VMHLLURERBWHNL-UHFFFAOYSA-M 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- -1 potassium ferricyanide Chemical compound 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 235000017281 sodium acetate Nutrition 0.000 description 1
- 239000001632 sodium acetate Substances 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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Description
1a、11a Cu基材の主面
2、12 Mo基材
2a、12a Mo基材の第1の主面
2b、12b Mo基材の第2の主面
2c、2d、12c、12d Mo基材の側面
3 第1のSn−Cu系合金層
4、14 Niめっき層
5 Cu基材とMo基材とが接合されたクラッド材
6 Sn−Cu系合金ろう材
13 Sn−Cu系合金層
13a 第1のSn−Cu系合金層
13b 第2のSn−Cu系合金層
15 Mo基材の両面にSn−Cu系合金層が接合されたクラッド材
10、20 Cu−Mo基板
21 Cu基材
22a、22b Mo基材
23a、23b Sn−Cu系合金層
24 Niめっき層
30 第1のCu−Mo基板30
31a Cu基材
32a Mo基材
33a、33b Sn−Cu系合金層
34a Niめっき層
40a、40b、40c、40d 第2のCu−Mo基板
50a、50b セラミックス基板
51、52 Sn−Pbなどのはんだ層
53a、53b Ag−Cuなどのはんだ層
60a、60b、60c、60d 半導体チップ
70a、70b Alワイヤ
80、300 パワーモジュール
90、120 Cu−Mo積層板
91,121 Cu基材
91a,121a Cu基材の主面
92、122 Mo基材
92a、122a Mo基材の第1の主面
92b、122b Mo基材の第2の主面
92c、92d Mo基材の側面
93、123 Sn−Cu系合金層
100、200 Cu−Mo−Ni基板
101 放熱部材
108 回路基板(セラミックス基板)
108a セラミックス板
108b、108c 銅箔の回路板
109 半導体チップ
111、112 はんだ層
本発明による実施形態のCu−Mo基板および製造方法を説明する。
図1を参照しながら、本発明による第1の実施形態のCu−Mo基板10を説明する。Cu−Mo基板10の表面は、Niめっき層4で被覆されている。以下では、説明の便宜のため、Niめっき層が形成される前の基板を「Cu−Mo基板」と呼び、Cu−Mo基板にNiめっき層が被覆された基板を「Cu−Mo−Ni基板」と呼ぶ。
まず、図2(a)に示すように、Cu基材1とMo基材2とが接合されたCu−Moクラッド材5を用意する(工程(a1))。
図3を参照しながら、本発明による第2の実施形態のCu−Mo基板20を説明する。
図4を参照しながら、第2の方法を説明する。
図5を参照しながら、第3の方法を説明する。以下では、第2の方法と異なる工程を詳しく説明し、重複する工程の説明は省略する。
図6を参照しながら、本実施形態のCu−Mo−Ni基板を備えたパワーモジュール80の実施形態を説明する。ただし、本実施形態のパワーモジュールは、これに限定されない。
本発明による実施形態のCu−Mo積層板は、Cu基材と、Mo基材と、1質量%以上13質量%以下のSnを含むSn−Cu系合金層とがこの順序で配置されている。Cu基材とMo基材との間(接合面)には、1質量%以上13質量%以下のSnを含む更なるSn−Cu系合金層が配置されていてもよい。
ここでは、Cu−Moクラッド材を用い、Moの表面露出領域(上面および側面)にSn−Cu系合金層が設けられたCu−Mo基板を作製した(発明例1)。Cu−Moクラッド材は、Cu基材1とMo基材2とを重ね合わせて熱間圧延を行うことによって作製した(Cu基材の厚さ0.63mm、Mo基材の厚さ0.63mm)。
(2)硫酸過酸化水素水(硫酸と過酸化水素水と水とを10:5:85の体積比率で混合した液)によるエッチング(30℃で5分間)
(3)Cu−Mo基板への触媒金属の導入
Sn触媒付与(室温で約5分間)→Pd−Sn錯体触媒付与(室温で約5分間)→Pd触媒付与(室温で約3分間)
(4)Niめっき層の形成
下記組成の無電解Niめっき浴(硫酸Ni:30g/L、次亜リン酸ナトリウム:10g/L、酢酸ナトリウム:適量、pH:約4.6)を用い、80℃で30分間めっきを行った。
比較のため、Cu−Mo基板に対し、特許文献1に記載の方法と同様にして無電解Niめっきを行った。
参考のため、Cu−Mo基板に対し、従来のNiめっき処理を行った。
5質量%のSnを含むSnーCu系合金ろう箔(融点:約940℃)を用いたことを除き、実験例1と同じ手順でNiめっき層を形成した。なお、Sn−Cu系合金層を形成するための加熱処理の温度は、用いたろう箔の融点よりも約40℃〜約50℃高い温度とした。これは下記の実験例5〜7についても同様である。
13質量%のSnを含むSnーCu系合金ろう箔(融点:約810℃)を用いたことを除き、実験例1と同じ手順でNiめっき層を形成した。
比較のため、14質量%のSnを含むSnーCu系合金ろう箔(融点:約800℃)を用いたことを除き、実験例1と同じ手順でNiめっき層を形成した。
比較のため、0.5質量%のSnを含むSnーCu系合金ろう箔(融点:約1000℃)を用いたことを除き、実験例1と同じ手順でNiめっき層を形成した。
実験例1から7によって得られたCu−Mo基板の外観を目視観察した。以下では、実験例1から7によって得られたCu−Mo基板を、それぞれ、発明例1、比較例1、および従来例、発明例2、発明例3、比較例2および比較例3と呼ぶ。
発明例1について、Mo基材の上面に形成されたSn−Cu系合金層の厚さ方向の断面のSnの濃度を、EPMA分析法を用いて測定した。詳細には、図7に示すCu−Mo−Ni基板の断面写真において、合計5箇所(図中、1から5の矢印部分)のSn濃度を測定した。その結果を表1に示す。
Claims (10)
- Cuを主成分として含有するCu基材と、
対向する第1および第2の主面を有し、Moを主成分として含有するMo基材であって、前記Mo基材の前記第2の主面は、前記Cu基材の主面の上に配置されたMo基材と、
前記Mo基材の前記第1の主面および側面を覆う1質量%以上13質量%以下のSnを含む第1のSn−Cu系合金層とを備え、
前記Cu基材の表面の少なくとも一部と、前記Mo基材を覆う前記第1のSn−Cu合金層とを覆うNiめっき層を更に備える、Cu−Mo基板。 - 前記Cu基材の主面と前記Mo基材の前記第2の主面との間に設けられた1質量%以上13質量%以下のSnを含む第2のSn−Cu系合金層を更に備える、請求項1に記載のCu−Mo基板。
- 前記第1のSn−Cu系合金層は、前記Mo基材の前記第1の主面と接する第1面と、前記第1面と対向する第2面とを有し、前記第2面におけるSnの濃度は、前記第1面におけるSnの濃度よりも高い、請求項1または2に記載のCu−Mo基板。
- 半導体素子と、前記半導体素子の熱を外部に伝達する機能を果たす放熱用基板とを備えたパワーモジュールであって、
前記放熱用基板は、請求項1から3のいずれかに記載のCu−Mo基板から構成されているパワーモジュール。 - 前記半導体素子はIGBTである請求項4に記載のパワーモジュール。
- 請求項1または2に記載のCu−Mo基板を製造する方法であって、
前記Cu基材と、前記Mo基材と、1質量%以上13質量%以下のSnを含むSn−Cu系合金層とを用意する工程(a)と、
前記Cu基材の主面の上に前記Mo基材と前記Sn−Cu系合金層とをこの順で配置した状態で、前記Sn−Cu系合金層を溶融する工程(b)と、
を含むCu−Mo基板の製造方法。 - 前記工程(a)は、前記Cu基材と前記Mo基材とが接合されたクラッド材を用意する工程(a1)を含む、請求項6に記載のCu−Mo基板の製造方法。
- 前記工程(a)は、前記Mo基材の前記第1の主面の上に1質量%以上13質量%以下のSnを含むSn−Cu系合金層が接合され、且つ、前記第2の主面の下に1質量%以上13質量%以下のSnを含む更なるSn−Cu系合金層が接合されたクラッド材を用意する工程(a2)を含み、
前記工程(b)は、前記Sn−Cu系合金層および前記更なるSn−Cu系合金層を溶融する工程(b1)を含む、請求項6に記載のCu−Mo基板の製造方法。 - 前記工程(a)は、1質量%以上13質量%以下のSnを含む更なるSn−Cu系合金層を更に用意する工程(a3)を含み、
前記工程(b)は、前記Cu基材の主面の上に前記更なるSn−Cu系合金層と前記Mo基材と前記Sn−Cu系合金層とをこの順で配置した状態で、前記Sn−Cu系合金層および前記更なるSn−Cu系合金層を溶融する工程(b2)を含む、請求項6に記載のCu−Mo基板の製造方法。 - 請求項1または2に記載のCu−Mo基板を製造する方法であって、
前記Cu基材と、前記Mo基材と、1質量%以上13質量%以下のSnを含むSn−Cu系合金層とを用意する工程(a)と、
前記Mo基材の前記第1の主面の上に前記Sn−Cu系合金層を配置した状態で、前記Sn−Cu系合金層を溶融することによって、前記Mo基材の前記第1の主面および側面を覆うSn−Cu系合金層を形成する工程(b)と、
前記Sn−Cu系合金層が形成された前記Mo基材の前記第2の主面を前記Cu基材の主面と接合する工程(c)と、
を含むCu−Mo基板の製造方法。
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US7830001B2 (en) * | 2005-05-23 | 2010-11-09 | Neomax Materials Co., Ltd. | Cu-Mo substrate and method for producing same |
US20080298024A1 (en) * | 2007-05-31 | 2008-12-04 | A.L.M.T. Corp. | Heat spreader and method for manufacturing the same, and semiconductor device |
EP2560203A1 (en) * | 2011-08-17 | 2013-02-20 | ABB Technology AG | Power semiconductor arrangement |
CN102284701B (zh) * | 2011-08-26 | 2012-10-03 | 西北有色金属研究院 | 一种Cu-MoCu-Cu复合板材的制备方法 |
WO2018047988A1 (ko) * | 2016-09-06 | 2018-03-15 | 주식회사 더굿시스템 | 고출력 소자용 방열판재 |
JP6871524B1 (ja) * | 2020-03-23 | 2021-05-12 | 千住金属工業株式会社 | 積層接合材料、半導体パッケージおよびパワーモジュール |
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