CN114557144A - 制造金属-陶瓷衬底的方法,焊接体系和利用该方法制造的金属-陶瓷衬底 - Google Patents
制造金属-陶瓷衬底的方法,焊接体系和利用该方法制造的金属-陶瓷衬底 Download PDFInfo
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- CN114557144A CN114557144A CN202080070667.2A CN202080070667A CN114557144A CN 114557144 A CN114557144 A CN 114557144A CN 202080070667 A CN202080070667 A CN 202080070667A CN 114557144 A CN114557144 A CN 114557144A
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- metal layer
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- soldering
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- 239000000919 ceramic Substances 0.000 title claims abstract description 115
- 238000000034 method Methods 0.000 title claims abstract description 96
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 203
- 239000002184 metal Substances 0.000 claims abstract description 203
- 229910000679 solder Inorganic materials 0.000 claims abstract description 160
- 239000000463 material Substances 0.000 claims abstract description 39
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- 239000004332 silver Substances 0.000 claims description 21
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
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- 239000010949 copper Substances 0.000 description 15
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
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- 229910016570 AlCu Inorganic materials 0.000 description 1
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 238000009792 diffusion process Methods 0.000 description 1
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- 238000009713 electroplating Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007735 ion beam assisted deposition Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002835 noble gases Chemical class 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/302—Cu as the principal constituent
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
- B23K1/0016—Brazing of electronic components
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
- B23K35/3006—Ag as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/34—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material comprising compounds which yield metals when heated
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- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/36—Selection of non-metallic compositions, e.g. coatings, fluxes; Selection of soldering or welding materials, conjoint with selection of non-metallic compositions, both selections being of interest
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- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
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- C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
- C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
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- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
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- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/06—Alloys based on silver
- C22C5/08—Alloys based on silver with copper as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
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- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/02—Alloys based on copper with tin as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/54—Contact plating, i.e. electroless electrochemical plating
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/38—Conductors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/08—Non-ferrous metals or alloys
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/16—Composite materials, e.g. fibre reinforced
- B23K2103/166—Multilayered materials
- B23K2103/172—Multilayered materials wherein at least one of the layers is non-metallic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/18—Dissimilar materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/52—Ceramics
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- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6581—Total pressure below 1 atmosphere, e.g. vacuum
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- C04B2237/04—Ceramic interlayers
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- C04B2237/066—Oxidic interlayers based on rare earth oxides
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- C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
- C04B2237/04—Ceramic interlayers
- C04B2237/08—Non-oxidic interlayers
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Abstract
一种用于制造金属‑陶瓷衬底(1)的方法,所述方法包括:‑提供至少一个陶瓷层(10)、至少一个金属层(20)和至少一个焊接层(30),所述焊接层尤其呈至少一个焊接箔的形式,‑利用至少一个活性金属层(40)对至少一个陶瓷层(10)和/或至少一个金属层(20)和/或至少一个焊接层(30)进行覆层,‑将至少一个焊接层(30)沿着堆叠方向(S)设置在至少一个陶瓷层(10)与至少一个金属层(20)之间以构成焊接体系(35),所述焊接体系包括至少一个焊接层和至少一个活性金属层(40),其中至少一个焊接层(30)的焊接材料没有降低熔点的材料,并且‑经由焊接体系(35)借助于活性焊料法将至少一个金属层(20)键合到至少一个陶瓷层(10)上。
Description
技术领域
本发明涉及一种用于制造金属-陶瓷衬底的方法、一种用于这种方法的焊接体系以及一种以这种方法制造的金属-陶瓷衬底。
背景技术
金属-陶瓷衬底例如作为印刷电路板或电路板从现有技术中充分已知,例如从DE10 2013 104 739 A1、DE 19 927 046 B4和DE 10 2009 033 029 A1中已知。通常,在金属-陶瓷衬底的构件侧上设置有用于电构件和带状导线的连接面,其中电构件和带状导线可互连成电路。金属-陶瓷衬底的主要组成部分是优选地由陶瓷制成的绝缘层和键合到绝缘层上的至少一个金属层。由于其相对高的绝缘强度,由陶瓷制成的绝缘层在电力电子学中已经证明是特别有利的。然后,通过对金属层进行结构化,能够实现用于电构件的带状导线和/或连接面。
用于提供这种金属-陶瓷衬底的前提条件是金属层持久地键合到陶瓷层上。除了所谓的直接键合方法、即DCB或DAB方法之外,从现有技术中已知经由焊接材料将金属层键合到陶瓷层上。
将如下方法理解为例如用于使金属层或金属箔尤其还有铜层或铜箔与陶瓷材料连接的活性焊料法,所述方法专门用于制造金属-陶瓷衬底。在此,在大约650℃-1000℃之间的温度中利用硬焊料在金属箔例如铜箔与陶瓷衬底例如铝氮化物陶瓷之间建立连接,所述硬焊料除了主成分如铜、银和/或金之外还包含活性金属。例如为组Hf、Ti、Zr、Nb、Ce中的至少一个元素的所述活性金属通过化学反应在焊料与陶瓷之间建立连接,而焊料与金属之间的连接是金属硬焊料连接。
例如,EP 3 041 042 A1和WO 2017/126653 A1公开了用于利用活性焊接材料制造功率模块衬底的方法。尤其地,在此提出,铜箔经由多层焊接体系键合到陶瓷层上。所述多层体系通过由钛箔构成的层和由含磷的焊接填充材料构成的层组成。
发明内容
基于所述现有技术,本发明的目的是,利用相对于现有技术改进的焊接体系、尤其在连接金属层和陶瓷层的焊接层和活性焊接期间的键合过程方面改进的焊接体系实现将金属层键合到陶瓷层上。
该目的通过根据权利要求1所述的用于制造金属-陶瓷衬底的方法、根据权利要求14所述的用于这种方法的焊接体系以及根据权利要求15所述的以这种方法制造的金属-陶瓷衬底来实现。其他优点和特性从从属权利要求以及说明书和附图中得出。
根据本发明的第一方面,提出用于制造金属-陶瓷衬底的方法,所述方法包括:
-提供至少一个陶瓷层、至少一个金属层和至少一个焊接层,所述焊接层尤其呈至少一个焊接箔或硬焊料箔的形式,
-借助于至少一个活性金属层对至少一个陶瓷层和/或至少一个金属层和/或至少一个焊接层进行覆层,
-将至少一个焊接层沿着堆叠方向设置在至少一个陶瓷层与至少一个金属层之间以构成焊接体系,所述焊接体系包括至少一个焊接层和至少一个活性金属层,其中至少一个焊接层的焊接材料优选地没有降低熔点的材料和/或没有磷,并且
-经由焊接体系借助于活性焊料法将至少一个金属层键合到至少一个陶瓷层上。
与从现有技术中已知的用于制造金属-陶瓷衬底的方法相比,根据本发明提出多层的焊接体系,所述多层的焊接体系由优选没有降低熔点的元素的至少一个焊接层和至少一个活性金属层构成。因此,至少一个活性金属层和至少一个焊接层的分离尤其被证明为是有利的,因为由此可实现相对薄的焊接层,尤其当焊接层是箔时。在其他情况下,对于含活性金属的焊接材料,由于阻碍焊接膏或焊接层的变形的脆性金属间相必须实现相对大的焊接层厚度,由此最小的层厚度受含活性金属的焊接材料的生产特性限制。对应地,对于含活性金属的焊接层,对于接合方法所需的最小厚度不确定焊接层的最小的焊接层厚度,而是焊接层的对于技术上可实现的最小层厚度确定焊接层的最小焊接层厚度。由此,所述更厚的含活性金属的焊接层比薄层更昂贵。
借助于将活性金属从至少一个焊接层中分出来,能够以有利的方式减小至少一个焊接层的焊接层厚度。因此,能够节省用于焊接体系或用于至少一个焊接层的材料。已经证明为特别有利的是,这种没有活性金属的焊接层此外能够轧制到小于10μm、优选小于7μm的厚度。另一优点是,简化在已制成的金属-陶瓷衬底处的结构化部的蚀刻,尤其因为焊接体系或至少一个焊接层的第二厚度减小。此外,能够在生产过程中加速金属层到陶瓷层上的键合。
在此,尤其已经证明:如果焊接层没有降低熔点的元素和/或没有磷,那么使用单独的活性金属层也是可行的。由此,在选择分别待用于至少一个焊接层的材料时更加灵活,并且能够利用针对活性焊料法已建立的过程参数。此外,在形成至少一个焊接层的准备阶段中,能够有利地省去添加对应的降低熔点的元素。尤其地,本领域技术人员将没有降低熔点的元素的至少一个焊接层理解为具有如下层,所述层具有小于3重量%、优选小于2重量%,并且特别优选小于1重量%的所述降低熔点的元素。所述降低熔点的元素的示例是磷和锌。例如,使用没有磷的焊接材料即使对于虽然没有磷但是仍包括降低熔点的材料的焊接层也允许有利地分离活性金属层和焊接层,所述降低熔点的材料到焊接层中的集成又引起熔点的不像对于磷已知的那么明显的降低。例如涉及将焊接层的熔点降低了小于100℃、优选小于80℃,并且特别优选小于50℃的这种降低熔点的材料。
此外,优选地提出,至少一个焊接层没有活性金属。尤其地,本领域技术人员将没有活性金属理解为:焊接层具有小于5重量%、优选小于3重量%,并且特别优选小于1.5重量%的活性金属。活性金属的示例是钛(Ti)、锆(Zr)、铪(Hf)、铬(Cr)、铌(Nb)、铈(Ce)和钒(V)。特别优选地提出,将至少一个焊接层作为箔提供。这允许:在将箔设置在至少一个陶瓷层与至少一个金属层之间时,尤其在金属-陶瓷衬底的批量生产中,尽可能简单地处理所述箔。
例如,也可设想的是,已经提供具有金属层或至少一个金属层的至少一个焊接层。例如,至少一个焊接层安置在用于制造金属-陶瓷衬底的至少一个金属层的一侧上。在这种情况下,至少一个金属层用作为至少一个焊接层的载体。然而,也可设想的是,将至少一个焊接层提供在形成载体的箔、例如塑料箔上。此外可设想的是,在至少一个金属层上提供至少一个焊接层,并且将优选具有另一粒度分布或另一平均粒度的至少一个另外的金属层施加在优选承载至少一个焊接层的至少一个金属层的背离焊接层的一侧上。尤其提出,至少一个金属层和至少一个另外的金属层的粒度、尤其其平均粒度彼此不同,使得在键合方法的过程中,在陶瓷的上侧处构成两层的金属化层。在此特别优选地提出,具有平均较小的粒度的金属层处于外侧,而具有相比之下平均较大的粒度的金属层朝向焊接体系或陶瓷层。
尤其已经证明为有利的是,至少一个活性金属层可选择性地施加在至少一个陶瓷层和/或至少一个金属层和/或至少一个焊接层上。优选地,至少一个活性金属层涂覆到所提及的层中的至少两个层上。优选地,至少一个活性金属层在至少一个陶瓷层或至少一个金属层上设置在如下侧上,所述侧在设置的状态中或在金属-陶瓷衬底中朝向至少一个焊接层。特别优选地提出,将至少一个活性金属层涂覆在至少一个焊接层上。在这种情况下,能够提供由至少一个焊接层与至少一个活性金属层构成的焊接体系,所述焊接体系针对活性焊料法能够简单地设置在至少一个陶瓷层与至少一个金属层之间。在此,键合方法在此涉及在600℃和1000℃之间、优选地700℃和950℃之间的工艺温度下执行的活性焊料法。
优选地,至少一个焊接层的焊接材料涉及银基或铜基的焊接材料。在银基的焊接材料中,银是主要成分,即具有关于重量百分比最高的份额的组成部分,而在铜基的焊接材料中,铜是主要成分。银基的焊接材料的示例是AgCu尤其AgCu28、AgCuln、AgCuSn和AgCuGa。铜基的焊接材料的示例是铜、CuSn、Culn、CuGa、CulnSn、CulnMn、CuGaSn。也可设想的是,使用NiCrMn作为焊接材料。尤其地,优选地提出,焊接层没有银,即焊接层包括小于3重量%的银、优选地小于2重量%的银,并且特别优选地小于1重量%的银。由此,能够以有利的方式节省银,否则所制成的金属-陶瓷衬底的银可能引起焊接体系中的银迁移。
优选地提出,焊接层或焊接层的焊接材料包括多个成分和/或没有银。换言之,焊料材料不由唯一的化学元素构成。尤其提出,焊接层并非仅由银构成。优选地提出,焊接层包括至少两个不同的成分或组成部分。由此以有利的方式可行的是,进一步优化键合表现,例如在粘附强度和耐温度变化性方面。例如,与纯银层的使用无关,所述纯银层的银迁移和蚀刻表现对已制成的金属-陶瓷衬底产生不利影响。作为焊接材料形成焊接层的材料的其他示例是:CuNi和CuNiMn,尤其直至焊料的1050℃的工作温度。此外可设想的是纯银。
作为用于至少一个金属层的材料可设想的是铜、铝、钼和/或其合金,以及层压材料和粉末冶金复合材料,如CuW、CuMo、CuAl、AlCu和/或CuCu,尤其具有第一铜层和第二铜层的铜夹层结构,其中第一铜层中的粒度与第二铜层不同。此外,优选地提出,至少一个金属层是表面改性的。作为表面改性部,例如可考虑具有贵金属、尤其银和/或金,或镍浸金(ENIG,“electroless nickel immersion gold”)的密封部或用于抑制裂纹形成或扩宽的对第一或第二金属化层的棱边封装。
优选地,至少一个陶瓷层具有Al2O3、Si3N4、AlN、HPSX陶瓷(即具有Al2O3基质的陶瓷,其包括x百分比份额的ZrO2,例如具有9%的ZrO2的Al2O3=HPS9,或者具有25%的ZrO2的Al2O3=HPS25)、SiC、BeO、MgO、高密度的MgO(>理论密度的90%)、TSZ(四方稳定锆氧化物)或ZTA作为用于陶瓷的材料。在此也可设想的是,绝缘层构成为复合陶瓷或混合陶瓷,其中为了组合不同的所期望的特性,在其材料组成方面分别不同的多个陶瓷层彼此相叠地设置并且接合成绝缘层。优选地,高级地导热的陶瓷用于尽可能小的热阻。
根据一个优选的实施方式提出,借助于气相沉积方法、尤其物理气相沉积方法(PVD),或借助于化学气相沉积(CVD)来施加至少一个活性金属层。借助于所述制造方法可行的是,提供尤其尽可能均匀地施加的类似地薄的活性金属层。尤其地,尽可能受控的施加是可行的,使得所施加的至少一个活性金属层在涂覆面上具有尽可能恒定的厚度。例如能够将蒸发方法例如热蒸发、电子束蒸发、激光束蒸发、电弧蒸发或分子束外延,喷镀如离子束辅助沉积、离子镀和/或ICB技术用作为气相沉积方法。
有利地,至少一个活性金属层的第一厚度具有在100nm和1000nm之间、优选在150nm和750nm之间,并且特别优选在200nm和500nm之间的值。这样薄的活性金属层有利地防止热导性的降低和金属-陶瓷衬底的机械强度的降低,尤其在至少一个陶瓷层与至少一个金属层之间的接口处。特别优选地,层厚度与预期的存放时间相协调。例如,对于长的存放时间、例如多于10天的存放时间,尤其对于作为活性金属层的钛而言,已经证明为有利的是,使用在750nm和1000nm之间的层厚度。对于更短的存放时间可行的是,使用150nm至350nm的第一厚度。
优选地提出,活性焊料法在小于10-2mbar、优选小于10-3mbar,并且特别优选小于10-4mbar的压力下和/或利用工艺气体来执行。例如,活性焊料法在具有非常低的氧气和小于1mbar的氩气分压的高度真空或高真空下执行。替选地也可设想的是,在氩气或通常在稀有气体的气氛下工作。因为在此不使用有机粘合剂,所以可行的是,将工艺时间减少一半。
此外优选地提出,至少一个焊接层的第二厚度具有在1μm和100μm之间、优选在1.5μm和50μm之间,并且特别优选在2μm和20μm之间或甚至小于10μm的值。在这种情况下尤其涉及键合过程、即活性焊料法之前的第二厚度。特别优选地提出,在键合过程之前进一步减小至少一个焊接层,例如借助于轧制减小到小于10μm的厚度、优选小于7μm的厚度,并且特别优选小于5μm的厚度。由此,能够有利地进一步减小焊接材料或至少一个焊接层的层厚度。此外优选地提出,至少一个焊接层在设置在至少一个陶瓷层与至少一个金属层之间之前借助于轧制包覆在其层厚度方面减小。由此,在(例如借助于轧制)在另一焊接层步骤中将至少一个焊接层减小到最终的、对于键合过程所设置的层厚度之前,就已经能够已经提前实现较薄的所述焊接层。
尤其提出,活性金属层的第一厚度与焊接层的第二厚度比采用在0.003和0.5之间、优选在0.015和0.2之间,并且特别优选在0.03和0.14之间的值。换言之,焊接层的第二厚度明显大于活性金属层的第一厚度。
此外优选地提出,至少一个活性金属层由至少一个保护层覆盖。借助于该至少一个保护层,以有利的方式可行的是,防止至少一个活性金属层的氧化。例如能够将铜(Cu)、镍(Ni)、铟(In)、银(Ag)、铬(Cr)或氮化钛(TiN)用作为用于至少一个活性金属层的保护层。在此,至少一个保护层的厚度至少具有100nm的值。特别优选地提出,至少一个保护层的厚度、即第三厚度适配于存放时间、即在涂覆至少一个活性金属层与在活性焊料法的过程中实际的键合过程之间所经过的时间。由此能够以有利的方式保证通过至少一个活性金属层覆盖的构件(无论是至少一个金属层和/或至少一个活性金属层和/或至少一个焊接层)的持久的存放,而至少一个活性金属层不会在键合方法的准备阶段就已经被氧化。例如,至少一个保护层的层厚度、即第三厚度在100nm或50nm和1000nm之间、优选在150nm和750nm之间,并且特别优选在250nm和500nm之间厚。
此外优选地提出,在堆叠方向上测量,至少一个保护层的第三厚度与至少一个活性金属层的第一厚度的比采用在0.5和1之间、优选在0.7和0.9之间,并且特别优选在0.75和0.85之间的值。
此外优选地提出,至少一个活性金属层在堆叠方向上改变其组成。由此能够同样以有利的方式防止活性金属层的提前氧化,尤其通过如下方式:随着距涂覆有活性金属的表面(无论是至少一个金属层、至少一个陶瓷层还是至少一个陶瓷层)的距离增大,增加嵌入元素如氮、氧或碳的份额。还可设想的是,为了延长设有至少一个活性金属层的部件或设有至少一个活性金属层的构件的存放时间,无论是至少一个金属层、至少一个在陶瓷层和/或至少一个焊接层,至少一个活性金属层都通过至少一个另外的焊接层覆盖。在此,至少一个另外的焊接层的厚度至少以倍数0.1、优选0.05,并且特别优选0.01比至少一个焊接层的第二厚度更薄。焊接体系以有利的方式形成夹层结构,其中至少一个活性金属层由至少一个焊接层和至少一个另外的焊接层包罩或包围。
优选地提出,轧制至少一个焊接层和/或至少一个活性金属层,优选使得活性金属层的第一厚度在轧制和/或压制之后具有小于1000nm、优选小于750nm,并且特别优选小于500nm的值。由此以有利的方式可行的是,替选于借助于电镀方法或气相沉积方法的涂覆,当共同轧制焊接层和活性金属层时,实现活性金属层的尤其小于1000nm的第一厚度。在此,共同轧制和/或压制焊接层和活性金属层的层厚度、即第一厚度和第二厚度。为此,首先将焊接层、例如呈厚的焊接箔形式的焊接层和活性金属层接合到一起,例如借助于上游的轧制或第一轧制接合到一起以减小层厚度。在此优选地提出,活性金属层的起始层厚度和焊接箔的起始层厚度相对于彼此的比例与已制成的焊接体系中的第一厚度和第二厚度相对于彼此的比例相同,所述焊接体系包括具有第一厚度的活性金属层和具有第二厚度的焊接层。通过随后的轧制、尤其多次轧制,活性金属层和焊接层通过每次轧制在其相应的厚度上被轧小,以便获得相对薄的焊接层,在所述焊接层上设置有更薄的活性金属层。然后,该焊接体系能够随后用于在活性焊料法的过程中将金属层键合到陶瓷层上。
特别优选地提出,设有另一活性金属层,其中焊接层设置在活性金属层与另一活性金属层之间。由此,也能够通过活性金属层的活性金属影响焊接层与至少一个金属层之间的接口。
此外优选地提出,陶瓷层通过活性金属层覆层,并且至少一个金属层通过焊接层覆层。
特别优选地提出,至少一个金属层具有大于1mm、优选大于1.3mm,并且特别优选大于1.5mm的层厚度。由此实现相对厚的至少一个金属层,所述至少一个金属层支持热能的快速导出并且已经在构件侧处实现热扩散。
本发明的另一个主题是用于根据本发明的方法的焊接体系,其中焊接体系包括尤其呈焊接箔的形式的至少一个焊接层和至少一个活性金属层。对于用于制造金属-陶瓷衬底的方法描述的所有优点和特征类似地适用于焊接体系。
另一主题是以如下方法制造的金属-陶瓷衬底,所述方法包括
-提供至少一个陶瓷层、至少一个金属层和至少一个焊接层,所述焊接层尤其呈至少一个焊接箔的形式,
-通过至少一个活性金属层对至少一个陶瓷层和/或至少一个金属层和/或至少一个焊接层进行覆层,
-将至少一个焊接层沿着堆叠方向设置在至少一个陶瓷层与至少一个金属层之间以构成焊接体系,所述焊接体系包括至少一个焊接层和至少一个活性金属层,其中至少一个焊接层的焊接材料优选没有降低熔点的材料,并且
-经由焊接体系借助于活性焊料法将至少一个金属层键合到至少一个陶瓷层上。对于用于制造金属-陶瓷衬底的方法描述的所有优点和特征类似地适用于金属-陶瓷衬底。
附图说明
参照附图从接下来对根据本发明的主题的优选的实施方式的描述中得出其他优点和特征。在此,在本发明的范围内,各个实施方式的各个特征能够彼此组合。
附图示出:
图1示意性地示出根据本发明的第一优选的实施方式的用于制造金属-陶瓷衬底的方法,
图2示意性地示出根据本发明的第二优选的实施方式的用于制造金属-陶瓷衬底的方法,
图3示意性地示出根据本发明的第三优选的实施方式的用于制造金属-陶瓷衬底的方法,
图4示意性地示出根据本发明的第四优选的实施方式的用于制造金属-陶瓷衬底的方法,以及
图5示意性地示出根据本发明的第五优选的实施方式的用于制造金属-陶瓷衬底的方法。
具体实施方式
在图1中示意性地示出根据本发明的第一优选的实施方式的用于制造金属-陶瓷衬底1的方法。如此,金属-陶瓷衬底1优选分别用作为可键合到金属-陶瓷衬底1上的电子构件或电构件的载体。在左上角示意性地示出已制成的金属-陶瓷衬底1的示例。这种金属-陶瓷衬底1的主要组成部分是沿主延伸平面HSE延伸的至少一个陶瓷层10和键合在至少一个陶瓷层10上的至少一个金属层20。至少一个陶瓷层10由至少一种包括陶瓷的材料制成。至少一个金属层20和至少一个陶瓷层10在此沿着垂直于主延伸平面HSE伸展的堆叠方向S相叠地设置并且在已制成的状态下经由焊接体系35至少局部地彼此材料配合地连接。优选地,已制成的金属-陶瓷衬底1中的至少一个金属层20于是被结构化以形成用于电构件的带状导线或键合部位。例如,该结构化部被蚀刻到至少一个金属层20中。然而,必须提前形成在至少一个金属层20与至少一个陶瓷层10之间的持久的键合、尤其材料配合的键合。
在图1的实施例中,该持久的、尤其材料配合的键合借助于活性焊料法来实现。为此,在至少一个陶瓷层10与至少一个金属层20之间设置有焊接体系35,经由所述焊接体系,在已制成的金属-陶瓷衬底1中确保陶瓷层10与金属层20之间的材料配合的键合。在此尤其提出,焊接体系35多层地构成。除了至少一个焊接层30之外,焊接体系35还包括至少一个活性金属层40。在此尤其提出,至少一个焊接层30没有活性金属,即不具有活性金属。替代于此,在焊接体系35中提供具有单独的层的活性金属作为活性金属层40。已经以有利的方式证明:通过焊接体系35中的这种分离,其中在一侧上在焊接层30中设置没有活性金属的焊接材料,而在另一侧上设有包括活性金属的活性金属层40,以有利的方式可行的是,实现尽可能薄的焊接层30。在其他情况下,对于尤其呈焊接箔的形式的至少一个焊接层30,必须忍受较大的最小层厚度,所述较大的最小层厚度通过至少一个焊接层30的制造过程限制而不通过对于接合过程所需的最小厚度限制。
通过分离至少一个活性金属层40和至少一个焊接层30,能够制造对应更薄的焊接箔,因为在此没有脆性金属间相阻碍变形。尤其地,由此以有利的方式可行的是,提供焊接层30,所述焊接层保证尤其呈焊接箔的形式的至少一个焊接层30可轧制到小于10μm、优选小于8μm,并且特别优选小于6μm的厚度的可轧制性。在所示出的实施例中,至少一个活性金属层40例如借助于喷镀或CVD涂覆到至少一个陶瓷层10上,并且在此具有第一厚度D1,所述第一厚度具有在100nm和1000nm之间、优选在150nm和750nm之间,并且特别优选在200nm和500nm之间的值。
这样薄的活性金属层40允许防止在其他情况下在较厚的活性金属层40中所预期的热导性和机械强度的降低。这对于在200nm和500nm之间的层厚度或第一厚度D1尤其如此。在此提出,尤其作为至少一个焊接箔的至少一个焊接层30在执行活性焊料法之前作为单独的层设置在至少一个活性金属层40与至少一个金属层20之间。例如可设想的是,将至少一个焊接箔施加到至少一个活性金属层40上,并且通过轧制步骤镀为小于10μm、优选小于7μm的第二厚度,以便确保尽可能薄的至少一个焊接层30。使用相对薄的至少一个焊接层30一方面加速键合方法,并且此外在建立至少一个陶瓷层10与至少一个金属层20之间的连接时以有利的方式降低材料需求。在此,至少一个陶瓷层10和至少一个金属层20在堆叠方向S上相叠地设置,其中具有至少一个焊接层30和至少一个活性金属层40的焊接体系35在堆叠方向S上设置在至少一个金属层20与至少一个陶瓷层10之间。尤其提出,至少一个焊接层30不仅没有活性金属,而且没有降低熔点的元素,如磷或锌。本领域技术人员尤其将“没有降低熔点的元素”基本上理解为,其在焊接层中的份额小于3重量%、优选小于2重量%,并且特别优选小于1重量%。例如,至少一个焊接层30弃用包含磷或锌的焊料材料,以便防止降低熔化温度。在此,以令人惊讶的方式证明:经由单独的至少一个活性金属层40的键合即使对于如下焊接材料也是可行的,在所述焊接材料中恰好不一起使用降低熔点的元素。这允许:对于在活性焊料法的常用的工艺温度中使用的焊接材料实现使用相对薄的至少一个焊接层30。对应地,能够使用通常在活性焊料法中使用的常用的工艺参数,并且能够实现相对非常薄的至少一个焊接层30。
在图2中示意性示出根据本发明第二示例性的实施方式的用于制造金属-陶瓷衬底1的方法。尤其地,图2的实施例与图1的实施例的区别基本上仅在于如下:除了至少一个活性金属层40之外,还设有至少一个保护层41。在主延伸平面HSE中延伸的至少一个保护层41在此尤其覆盖活性金属层40。通过使用这种至少一个保护层41,以有利的方式可行的是,防止在进行原本的键合过程、即活性焊料法之前,在至少一个活性金属层40或在至少一个活性金属层40的外侧处发生氧化。优选地,这种至少一个保护层41具有第三厚度D3,所述第三厚度具有至少100nm的最小厚度。优选地,至少一个保护层的第三厚度D3为100nm至1000nm、优选150nm至750nm,并且特别优选在200nm和500nm之间。此外,优选地提出,至少一个保护层41部分地或优选地完全覆盖至少一个活性元素层40,并且在堆叠方向S上观察时设置在至少一个活性金属层40与至少一个焊接层30之间。优选地,第三厚度D3适配于从活性金属层(40)和保护层(41)的沉积直至借助于活性焊料法进行键合的所预期的持续时间。由此,所设置的存放时间能够以有利的方式、尤其通过保护层41的第三厚度D3出现,以便保证至少一个活性金属层40在键合之前不经历氧化。优选地提出,至少一个保护层41的第三厚度D3基本上对应于活性金属层40的第一厚度D1。
此外提出,至少一个焊接层30具有第二厚度D2,所述第二厚度具有0.1μm和100μm之间、优选在0.5μm和50μm之间,并且特别优选在0.2μm和20μm之间的值。在此尤其涉及在将至少一个焊接层30放置或设置在至少一个金属层20或至少一个活性金属层40上之前的第二厚度D2。在此尤其提出,在施加或放置至少一金属层20之后通过另一轧制来进一步减小至少一个焊接层30的第二厚度D2。在设置至少一个金属层20、至少一个陶瓷层10和设置在至少一个金属层20与至少一个陶瓷层10之间的焊接体系35之后,利用700℃和900℃之间的温度进行键合。优选地,焊接方法在小于10mbar的压力下进行。也可设想的是,键合方法、即活性焊料法利用工艺气体来执行或在例如包括氩气或通常一种或多种稀有气体的工作气氛中执行。
在图3中示意性示出根据本发明的第三示例性的实施方式的用于制造金属-陶瓷衬底1的方法。所述实施例与图2中的实施例的区别基本上在于如下:至少一个活性金属层40在设置在至少一个金属层20与至少一个陶瓷层10之间之前键合到至少一个焊接层30上。换言之,在此,至少一个活性金属层40借助于喷镀键合到至少一个焊接层30上在时间上在设置在至少一个陶瓷层10与至少一个金属层20之间之前进行。尤其提出,至少一个保护层41在此也部分地或优选完全地、尤其在一侧覆盖至少一个活性金属层40,以便避免至少一个活性金属层40提前氧化。
在图4中示意性示出根据本发明的第四实施方式的用于制造金属-陶瓷衬底1的方法。与图2和图3中的实施例相反,在图4的实施例中提出,在活性焊料法之前将至少一个活性金属层40键合到至少一个金属层20上。在此,至少一个活性金属层40尤其设置在至少一个金属层20的在键合过程中朝向焊接层30的一侧上。例如,至少一个活性金属层40能够借助于CVD方法或通过喷镀、即通常借助于气相沉积方法全面地涂覆到至少一个金属层20上。在设置附着有至少一个活性金属层40的至少一个金属层20和至少一个陶瓷层10以及至少一个焊接层30之后,借助于活性焊料法进行键合方法。
在图5中示意性示出根据本发明的第五优选的实施方式的用于制造金属-陶瓷衬底1的方法。在此,图5的实施例与图2中的实施例的区别仅在于如下:至少一个陶瓷层10的前侧而且背侧经由相应的焊接体系35分别与至少一个金属层20连接,其中焊接体系35优选包括至少一个焊接层30、至少一个活性金属层40和至少一个保护层41。
附图标记列表
1 金属-陶瓷衬底
10 陶瓷层
20 金属层
30 焊接层
35 焊接体系
40 活性金属层
41 保护层
S 堆叠方向
HSE 主延伸平面
D1 第一厚度
D2 第二厚度
D3 第三厚度
Claims (15)
1.一种用于制造金属-陶瓷衬底(1)的方法,所述方法包括:
-提供至少一个陶瓷层(10)、至少一个金属层(20)和至少一个焊接层(30),所述焊接层尤其呈至少一个焊接箔的形式,
-利用至少一个活性金属层(40)对所述至少一个陶瓷层(10)和/或所述至少一个金属层(20)和/或所述至少一个焊接层(30)进行覆层,
-将所述至少一个焊接层(30)沿着堆叠方向(S)设置在所述至少一个陶瓷层(10)与所述至少一个金属层(20)之间以构成焊接体系(35),所述焊接体系包括所述至少一个焊接层和所述至少一个活性金属层(40),并且
-经由所述焊接体系(35)借助于活性焊料法将所述至少一个金属层(20)键合到所述至少一个陶瓷层(10)上。
2.根据权利要求1所述的方法,其中所述至少一个焊接层(30)的焊接材料没有降低熔点的材料和/或没有磷。
3.根据上述权利要求中任一项所述的方法,其中所述焊接层(30)包括多种成分和/或没有银。
4.根据上述权利要求中任一项所述的方法,其中所述至少一个活性金属层(40)的第一厚度(D1)具有在100nm和1000nm之间、优选在150nm和750nm之间,以及特别地优选在200nm和500nm之间的值。
5.根据上述权利要求中任一项所述的方法,其中
-所述活性焊料法在小于10-2mbar、优选小于10-3mbar,并且特别优选小于10-4mbar的压力下执行,和/或
-所述活性焊料法利用工艺气体来执行,
和/或
其中所述至少一个活性金属层(40)借助于气相沉积方法和/或电镀地施加。
6.根据上述权利要求中任一项所述的方法,其中所述至少一个焊接层(30)的第二厚度(D2)具有在1μm和100μm之间、优选在1.5μm和50μm之间,并且特别优选在2μm和20μm之间的值。
7.根据上述权利要求中任一项所述的方法,其中所述活性金属层(40)的第一厚度(D1)与所述焊接层(30)的第二厚度(D2)的比值在0.003和0.5之间、优选在0.015和0.2之间,并且特别优选在0.03和0.14之间。
8.根据上述权利要求中任一项所述的方法,其中所述至少一个活性金属层(40)由至少一个保护层(41)覆盖。
9.根据上述权利要求中任一项所述的方法,其中所述至少一个活性金属层(40)沿堆叠方向(S)的组成发生改变。
10.根据上述权利要求中任一项所述的方法,其中将所述至少一个焊接层(30)和/或所述至少一个活性金属层(40)尤其作为焊接体系(35)进行轧制,优选使得在所述轧制后,所述活性金属层(40)的第一厚度(D1)具有小于1000nm、优选小于750nm并且特别优选小于500nm的值。
11.根据上述权利要求中任一项所述的方法,其中设有另一活性金属层,其中所述焊接层(30)设置在所述活性金属层(40)与所述另一活性金属层之间。
12.根据上述权利要求中任一项所述的方法,其中利用所述活性金属层(40)对所述陶瓷层(10)进行覆层,并且利用所述焊接层(30)对所述至少一个金属层(20)进行覆层。
13.根据上述权利要求中任一项所述的方法,其中所述至少一个金属层(20)具有大于1mm、优选大于1.3mm,并且特别优选大于1.5mm的层厚度。
14.一种用于根据上述权利要求中任一项所述的方法的焊接体系(35),其中所述焊接体系(35)包括至少一个焊接层(30)和至少一个活性金属层(40),所述焊接层尤其呈至少一个焊接箔的形式。
15.一种以如下方法制造的金属-陶瓷衬底(1),所述方法包括:
-提供至少一个陶瓷层(10)、至少一个金属层(20)和至少一个焊接层(30),所述焊接层尤其呈至少一个焊接箔的形式,
-利用至少一个活性金属层(40)对所述至少一个陶瓷层(10)、所述至少一个金属层(20)和/或所述至少一个焊接层(30)进行覆层,
-将所述至少一个焊接层(30)沿着堆叠方向(S)设置在所述至少一个陶瓷层(10)与所述至少一个金属层(20)之间以构成焊接体系(35),所述焊接体系包括所述至少一个焊接层和所述至少一个活性金属层(40),并且
-经由所述焊接体系(35)借助于活性焊料法将所述至少一个金属层(20)键合到所述至少一个陶瓷层(10)上。
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EP3891317A1 (de) | 2021-10-13 |
DE202020005466U1 (de) | 2021-06-09 |
US20220362891A1 (en) | 2022-11-17 |
DE102019126954A1 (de) | 2021-04-08 |
JP2024045136A (ja) | 2024-04-02 |
US11945054B2 (en) | 2024-04-02 |
JP2023500204A (ja) | 2023-01-05 |
KR20220062339A (ko) | 2022-05-16 |
WO2021069320A1 (de) | 2021-04-15 |
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