JP4999227B2 - Ｓｏｉ基板を使用した懸垂梁の形成及びその振動式ジャイロメータの製作への応用 - Google Patents

Ｓｏｉ基板を使用した懸垂梁の形成及びその振動式ジャイロメータの製作への応用 Download PDF

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Publication number
JP4999227B2
JP4999227B2 JP2000570531A JP2000570531A JP4999227B2 JP 4999227 B2 JP4999227 B2 JP 4999227B2 JP 2000570531 A JP2000570531 A JP 2000570531A JP 2000570531 A JP2000570531 A JP 2000570531A JP 4999227 B2 JP4999227 B2 JP 4999227B2
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Japan
Prior art keywords
wafer
insulating layer
ring element
gyrometer
etched
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Expired - Fee Related
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JP2000570531A
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Japanese (ja)
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JP2002525843A5 (enExample
JP2002525843A (ja
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マーク エドワード マックニー
ヴィシャル ナヤー
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Qinetiq Ltd
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Qinetiq Ltd
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/02—Rotary gyroscopes
    • G01C19/04—Details
    • G01C19/16—Suspensions; Bearings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Physical Vapour Deposition (AREA)
  • Press Drives And Press Lines (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Producing Shaped Articles From Materials (AREA)
JP2000570531A 1998-09-12 1999-09-13 Ｓｏｉ基板を使用した懸垂梁の形成及びその振動式ジャイロメータの製作への応用 Expired - Fee Related JP4999227B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9819821.1A GB9819821D0 (en) 1998-09-12 1998-09-12 Improvements relating to micro-machining
GB9819821.1 1998-09-12
PCT/GB1999/003028 WO2000016041A2 (en) 1998-09-12 1999-09-13 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer

Publications (3)

Publication Number Publication Date
JP2002525843A JP2002525843A (ja) 2002-08-13
JP2002525843A5 JP2002525843A5 (enExample) 2006-10-12
JP4999227B2 true JP4999227B2 (ja) 2012-08-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000570531A Expired - Fee Related JP4999227B2 (ja) 1998-09-12 1999-09-13 Ｓｏｉ基板を使用した懸垂梁の形成及びその振動式ジャイロメータの製作への応用

Country Status (11)

Country Link
US (2) US6276205B1 (enExample)
EP (2) EP1116008B1 (enExample)
JP (1) JP4999227B2 (enExample)
KR (1) KR100651769B1 (enExample)
AT (1) ATE367570T1 (enExample)
AU (1) AU5874099A (enExample)
CA (1) CA2343446A1 (enExample)
DE (1) DE69936590T2 (enExample)
GB (1) GB9819821D0 (enExample)
NO (1) NO20011230L (enExample)
WO (1) WO2000016041A2 (enExample)

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JP2012237673A (ja) * 2011-05-12 2012-12-06 Dainippon Printing Co Ltd 力学量センサー

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Also Published As

Publication number Publication date
US6670212B2 (en) 2003-12-30
EP1116008A2 (en) 2001-07-18
WO2000016041A3 (en) 2000-09-28
ATE367570T1 (de) 2007-08-15
AU5874099A (en) 2000-04-03
CA2343446A1 (en) 2000-03-23
KR100651769B1 (ko) 2006-11-30
NO20011230D0 (no) 2001-03-09
JP2002525843A (ja) 2002-08-13
GB9819821D0 (en) 1998-11-04
WO2000016041A2 (en) 2000-03-23
KR20010075052A (ko) 2001-08-09
EP1808672A2 (en) 2007-07-18
EP1116008B1 (en) 2007-07-18
EP1808672A3 (en) 2009-06-17
DE69936590D1 (de) 2007-08-30
DE69936590T2 (de) 2007-11-22
NO20011230L (no) 2001-05-11
US6276205B1 (en) 2001-08-21
US20020017132A1 (en) 2002-02-14

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