JP5316479B2 - 半導体力学量センサの製造方法及び半導体力学量センサ - Google Patents
半導体力学量センサの製造方法及び半導体力学量センサ Download PDFInfo
- Publication number
- JP5316479B2 JP5316479B2 JP2010121888A JP2010121888A JP5316479B2 JP 5316479 B2 JP5316479 B2 JP 5316479B2 JP 2010121888 A JP2010121888 A JP 2010121888A JP 2010121888 A JP2010121888 A JP 2010121888A JP 5316479 B2 JP5316479 B2 JP 5316479B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating layer
- semiconductor
- semiconductor substrate
- layer
- protrusion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 525
- 238000004519 manufacturing process Methods 0.000 title claims description 75
- 239000000758 substrate Substances 0.000 claims abstract description 262
- 238000005530 etching Methods 0.000 claims description 126
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 28
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000012535 impurity Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 18
- 238000000638 solvent extraction Methods 0.000 claims description 8
- 230000004044 response Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 453
- 239000010408 film Substances 0.000 description 50
- 239000000243 solution Substances 0.000 description 31
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000013078 crystal Substances 0.000 description 16
- 230000004048 modification Effects 0.000 description 14
- 238000012986 modification Methods 0.000 description 14
- 230000002093 peripheral effect Effects 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000000059 patterning Methods 0.000 description 12
- 229910052814 silicon oxide Inorganic materials 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 11
- 238000001020 plasma etching Methods 0.000 description 9
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 7
- 238000006073 displacement reaction Methods 0.000 description 6
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000003513 alkali Substances 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000255777 Lepidoptera Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00182—Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
- G01C19/5755—Structural details or topology the devices having a single sensing mass
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/025—Inertial sensors not provided for in B81B2201/0235 - B81B2201/0242
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0285—Vibration sensors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/04—Optical MEMS
- B81B2201/047—Optical MEMS not provided for in B81B2201/042 - B81B2201/045
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Pressure Sensors (AREA)
- Micromachines (AREA)
Description
(第1実施形態)
図1は、第1実施形態に係る半導体力学量センサの概略構成を示す平面図である。図2は、図1のII−II線に沿う断面図である。以下においては、便宜上、基板(若しくは半導体基板)の厚み方向を縦方向とし、厚み方向に垂直な方向を横方向とする。
次に、本発明の第2実施形態を、図15及び図16に基づいて説明する。図15及び図16は、第2実施形態に係る半導体力学量センサの製造方法を示す断面図である。
次に、本発明の第3実施形態を、図17〜図22に基づいて説明する。図17は、第3実施形態に係る半導体力学量センサの概略構成を示す断面図である。図18〜図22は、図17に示す半導体力学量センサの製造方法を示す断面図である。
次に、本発明の第4実施形態を、図23〜図29に基づいて説明する。図23は、第4実施形態に係る半導体力学量センサの概略構成を示す平面図である。図24は、図23のXXIV−XXIV線に沿う断面図である。図25は、図23の突起部周辺を拡大した図である。図26は、製造方法を説明する上で、便宜上、図23〜図25に示す半導体力学量センサを簡素化した構成の断面図である。図27〜図29は、第4実施形態に係る半導体力学量センサの製造方法を示す断面図である。
21・・・半導体基板
22・・・絶縁層
23・・・半導体層
24・・・貫通孔
24a・・・溝
30・・・可動部
31・・・可動電極
40a,40b・・・固定部
41a,41b・・・固定電極
60・・・突起部
61・・・凹部
Claims (6)
- 絶縁層を介して半導体基板上に半導体層が配置された基板に対し、前記半導体層に、力学量の印加に応じて所定方向に変位可能な可動部を構成してなる半導体力学量センサの製造方法であって、
前記基板として、単結晶シリコンからなり、主面が(111)面とは異なる面である前記半導体基板の一主面上に、前記絶縁層を介して、前記半導体基板よりも不純物濃度の高いP導電型のシリコンからなる前記半導体層が配置されたものを準備し、
前記半導体層における前記絶縁層とは反対の表面側から前記半導体層を異方性エッチングし、前記絶縁層に達する溝を形成して、前記半導体層に所定形状の前記可動部を区画する工程と、
前記溝を通じて前記絶縁層を選択的にエッチングし、前記溝を前記半導体基板に達するものとするとともに、前記基板の厚み方向とは垂直な方向において、前記可動部直下における前記絶縁層の幅を前記可動部の幅よりも狭くする工程と、
前記半導体基板に達する溝を通じて、アルカリ系のエッチング液により、前記半導体層のエッチングを抑制しつつ前記半導体基板を選択的にエッチングして、前記半導体基板の一主面側であって前記可動部の直下に、突起先端が前記絶縁層と接する突起部を形成する工程と、
前記突起部形成後、前記絶縁層を選択的にエッチングして、前記可動部直下に位置する前記絶縁層を除去する工程と、を備えることを特徴とする半導体力学量センサの製造方法。 - 絶縁層を介して半導体基板上に半導体層が配置された基板に対し、前記半導体層に、力学量の印加に応じて所定方向に変位可能な可動部を構成してなる半導体力学量センサの製造方法であって、
前記基板として、単結晶シリコンからなり、主面が(111)面とは異なる面である前記半導体基板の一主面上に、前記絶縁層を介して、前記半導体基板よりも不純物濃度の高いP導電型のシリコンからなる前記半導体層が配置されたものを準備し、
前記半導体層における前記絶縁層とは反対の表面側から、前記半導体層、前記絶縁層、及び前記半導体基板を前記基板の厚み方向に異方性エッチングし、前記半導体層及び前記絶縁層を貫通して前記半導体基板の所定深さに達する溝を形成して、前記半導体層に所定形状の前記可動部を区画する工程と、
前記溝を通じて、アルカリ系のエッチング液により、前記半導体層のエッチングを抑制しつつ前記半導体基板を選択的にエッチングして、前記半導体基板の一主面側であって前記可動部の直下に、断面形状が台形若しくは三角で、突起先端が前記絶縁層と接する突起部を形成する工程と、
前記突起部形成後、前記絶縁層を選択的にエッチングして、前記可動部直下に位置する前記絶縁層を除去する工程と、を備えることを特徴とする半導体力学量センサの製造方法。 - 前記半導体基板の主面が、(100)面、若しくは、(110)面であることを特徴とする請求項1又は請求項2に記載の半導体力学量センサの製造方法。
- 絶縁層を介して半導体基板上に半導体層が配置された基板に対し、前記半導体層に、力学量の印加に応じて所定方向に変位可能な可動部を構成してなる半導体力学量センサの製造方法であって、
前記基板として、単結晶シリコンからなり、主面が(111)面とは異なる面である前記半導体基板の一主面上に、前記絶縁層を介して、N導電型のシリコンからなる前記半導体層が配置されたものを準備し、
前記半導体層における前記絶縁層とは反対の表面側から、前記半導体層を異方性エッチングし、前記絶縁層に達する溝を形成して、前記半導体層に前記可動部を区画する工程と、
前記溝を通じて前記絶縁層を選択的にエッチングし、前記溝を前記半導体基板に達するものとするとともに、前記基板の厚み方向とは垂直な方向において、前記可動部直下における前記絶縁層の幅を前記可動部の幅よりも狭くする工程と、
前記半導体層に正の電圧を印加した状態で、前記半導体基板に達する溝を通じて、アルカリ系のエッチング液により前記半導体層のエッチングを抑制しつつ前記半導体基板を選択的にエッチングし、前記半導体基板の一主面側であって前記可動部の直下に、突起先端が前記絶縁層と接する突起部を形成する工程と、
前記突起部形成後、前記絶縁層を選択的にエッチングして、前記可動部直下に位置する前記絶縁層を除去する工程と、を備えることを特徴とする半導体力学量センサの製造方法。 - 絶縁層を介して半導体基板上に半導体層が配置された基板に対し、前記半導体層に、力学量の印加に応じて所定方向に変位可能な可動部を構成してなる半導体力学量センサの製造方法であって、
前記基板として、単結晶シリコンからなり、主面が(111)面とは異なる面である前記半導体基板の一主面上に、前記絶縁層を介して、N導電型のシリコンからなる前記半導体層が配置されたものを準備し、
前記半導体層における前記絶縁層とは反対の表面側から、前記半導体層、前記絶縁層、及び前記半導体基板を前記基板の厚み方向に異方性エッチングし、前記半導体層及び前記絶縁層を貫通して前記半導体基板の所定深さに達する溝を形成して、前記半導体層に前記可動部を区画する工程と、
前記半導体層に正の電圧を印加した状態で、前記溝を通じて、アルカリ系のエッチング液により、前記半導体層のエッチングを抑制しつつ前記半導体基板を選択的にエッチングし、前記半導体基板の一主面側であって前記可動部の直下に、断面形状が台形若しくは三角で、突起先端が前記絶縁層と接する突起部を形成する工程と、
前記突起部形成後、前記絶縁層を選択的にエッチングして、前記可動部直下に位置する前記絶縁層を除去する工程と、を備えることを特徴とする半導体力学量センサの製造方法。 - 前記半導体基板の主面が、(100)面、若しくは、(110)面であることを特徴とする請求項4又は5に記載の半導体力学量センサの製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010121888A JP5316479B2 (ja) | 2009-06-09 | 2010-05-27 | 半導体力学量センサの製造方法及び半導体力学量センサ |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009138494 | 2009-06-09 | ||
JP2009138494 | 2009-06-09 | ||
JP2010121888A JP5316479B2 (ja) | 2009-06-09 | 2010-05-27 | 半導体力学量センサの製造方法及び半導体力学量センサ |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013080452A Division JP5494861B2 (ja) | 2009-06-09 | 2013-04-08 | 半導体力学量センサの製造方法及び半導体力学量センサ |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011017693A JP2011017693A (ja) | 2011-01-27 |
JP5316479B2 true JP5316479B2 (ja) | 2013-10-16 |
Family
ID=43299767
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010121888A Expired - Fee Related JP5316479B2 (ja) | 2009-06-09 | 2010-05-27 | 半導体力学量センサの製造方法及び半導体力学量センサ |
JP2013080452A Expired - Fee Related JP5494861B2 (ja) | 2009-06-09 | 2013-04-08 | 半導体力学量センサの製造方法及び半導体力学量センサ |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013080452A Expired - Fee Related JP5494861B2 (ja) | 2009-06-09 | 2013-04-08 | 半導体力学量センサの製造方法及び半導体力学量センサ |
Country Status (2)
Country | Link |
---|---|
US (1) | US8413507B2 (ja) |
JP (2) | JP5316479B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5115618B2 (ja) * | 2009-12-17 | 2013-01-09 | 株式会社デンソー | 半導体装置 |
DE102010029708B4 (de) * | 2010-06-04 | 2023-03-02 | Robert Bosch Gmbh | Mikromechanisches System |
DE102010038461B4 (de) * | 2010-07-27 | 2018-05-30 | Robert Bosch Gmbh | Drehratensensor und Verfahren zur Herstellung eines Masseelements |
TWI434802B (zh) * | 2010-12-23 | 2014-04-21 | Ind Tech Res Inst | 具電性絕緣結構之微機電裝置及其製造方法 |
CN102156203B (zh) | 2011-03-15 | 2013-07-24 | 迈尔森电子(天津)有限公司 | Mems惯性传感器及其形成方法 |
US8852984B1 (en) | 2011-03-30 | 2014-10-07 | Silicon Laboratories | Technique for forming a MEMS device |
US8877536B1 (en) * | 2011-03-30 | 2014-11-04 | Silicon Laboratories Inc. | Technique for forming a MEMS device using island structures |
JP5790429B2 (ja) * | 2011-11-17 | 2015-10-07 | セイコーエプソン株式会社 | 物理量センサー素子、物理量センサー素子の製造方法及び電子機器 |
JP6035733B2 (ja) * | 2011-12-19 | 2016-11-30 | セイコーエプソン株式会社 | 物理量センサーの製造方法 |
TWI469254B (zh) * | 2011-12-29 | 2015-01-11 | Ind Tech Res Inst | 具多重電性通道的微機電裝置及其製作方法 |
US9550663B2 (en) | 2013-02-06 | 2017-01-24 | Panasonic Intellectual Property Management Co., Ltd. | MEMS device |
GB2521990A (en) * | 2013-03-22 | 2015-07-15 | Schrader Electronics Ltd | A microelectromechanical switch and related fabrication method |
JP6020341B2 (ja) * | 2013-05-09 | 2016-11-02 | 株式会社デンソー | 容量式物理量センサおよびその製造方法 |
US9446938B2 (en) | 2013-05-09 | 2016-09-20 | Denso Corporation | SOI substrate, physical quantity sensor, SOI substrate manufacturing method, and physical quantity sensor manufacturing method |
JP2015010871A (ja) * | 2013-06-27 | 2015-01-19 | 株式会社デンソー | 物理量センサ |
JP6020392B2 (ja) * | 2013-09-03 | 2016-11-02 | 株式会社デンソー | 加速度センサ |
JP6160823B2 (ja) * | 2013-09-10 | 2017-07-12 | セイコーエプソン株式会社 | 物理量センサー、振動デバイス、電子機器および移動体 |
JP2015160293A (ja) * | 2014-02-28 | 2015-09-07 | セイコーエプソン株式会社 | ウェハレベル封止構造及びmems素子の製造方法 |
JP6409351B2 (ja) * | 2014-06-12 | 2018-10-24 | 株式会社デンソー | 物理量センサ |
US11313796B2 (en) | 2017-03-06 | 2022-04-26 | Asahi Kasei Microdevices Corporation | Optical waveguide and optical concentration measuring apparatus comprising a support with a shifted connecting portion |
JP2019120559A (ja) * | 2017-12-28 | 2019-07-22 | セイコーエプソン株式会社 | 物理量センサー、物理量センサーの製造方法、物理量センサーデバイス、電子機器および移動体 |
US10928318B2 (en) | 2018-08-31 | 2021-02-23 | Asahi Kasei Microdevices Corporation | Optical waveguide and optical concentration measuring apparatus |
DE102020214925A1 (de) | 2020-11-27 | 2022-06-02 | Robert Bosch Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines Polysilizium-SOI-Substrats mit einer Kavität |
US11545577B2 (en) * | 2020-12-08 | 2023-01-03 | Globalfoundries U.S. Inc. | Semiconductor structure with in-device high resistivity polycrystalline semiconductor element and method |
Family Cites Families (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62266876A (ja) | 1986-05-14 | 1987-11-19 | Nippon Denso Co Ltd | 半導体圧力センサ |
US5605598A (en) * | 1990-10-17 | 1997-02-25 | The Charles Stark Draper Laboratory Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
JPH04240776A (ja) * | 1991-01-24 | 1992-08-28 | Toshiba Corp | 半導体圧力センサおよびその製造方法 |
JPH05335596A (ja) * | 1991-02-25 | 1993-12-17 | Nissan Motor Co Ltd | 半導体加速度センサおよびその製造方法 |
JPH04286165A (ja) | 1991-03-15 | 1992-10-12 | Ricoh Co Ltd | 微小機械及びその製造方法 |
US5198390A (en) | 1992-01-16 | 1993-03-30 | Cornell Research Foundation, Inc. | RIE process for fabricating submicron, silicon electromechanical structures |
US5549785A (en) * | 1992-09-14 | 1996-08-27 | Nippondenso Co., Ltd. | Method of producing a semiconductor dynamic sensor |
JPH06213924A (ja) | 1993-01-13 | 1994-08-05 | Hitachi Ltd | トランスジューサ、これを利用したマイクロセンサ、車両制御システム |
ATE269588T1 (de) | 1993-02-04 | 2004-07-15 | Cornell Res Foundation Inc | Mikrostrukturen und einzelmask, einkristall- herstellungsverfahren |
JP3189506B2 (ja) | 1993-06-07 | 2001-07-16 | 株式会社村田製作所 | 加速度センサ |
JPH08219795A (ja) | 1995-02-10 | 1996-08-30 | Murata Mfg Co Ltd | 角速度センサ |
JPH08320339A (ja) * | 1995-05-25 | 1996-12-03 | Nippondenso Co Ltd | 半導体力学量センサ |
JP3489273B2 (ja) | 1995-06-27 | 2004-01-19 | 株式会社デンソー | 半導体力学量センサの製造方法 |
JPH09105760A (ja) | 1995-10-09 | 1997-04-22 | Fujikura Ltd | 加速度センサ |
JPH09127151A (ja) * | 1995-11-01 | 1997-05-16 | Murata Mfg Co Ltd | 加速度センサ |
JPH09292409A (ja) * | 1996-04-26 | 1997-11-11 | Hitachi Ltd | 加速度センサ |
JPH10135488A (ja) * | 1996-10-29 | 1998-05-22 | Murata Mfg Co Ltd | 半導体加工部品の製造方法 |
JP4000615B2 (ja) * | 1997-03-21 | 2007-10-31 | 日産自動車株式会社 | 微小機械の製造方法 |
DE19903380B4 (de) | 1998-02-02 | 2007-10-18 | Denso Corp., Kariya | Halbleitersensoren für eine physikalische Grösse und ihre Herstellungsverfahren |
JP3660119B2 (ja) * | 1998-02-18 | 2005-06-15 | 株式会社デンソー | 半導体力学量センサ |
US6065341A (en) | 1998-02-18 | 2000-05-23 | Denso Corporation | Semiconductor physical quantity sensor with stopper portion |
JPH11230986A (ja) * | 1998-02-18 | 1999-08-27 | Denso Corp | 半導体力学量センサ |
JPH11248733A (ja) * | 1998-03-05 | 1999-09-17 | Denso Corp | 角速度センサ及びその製造方法 |
JPH11258265A (ja) * | 1998-03-16 | 1999-09-24 | Akebono Brake Ind Co Ltd | 半導体加速度センサ及びその製造方法 |
JP2001091262A (ja) * | 1999-09-21 | 2001-04-06 | Toyota Motor Corp | 半導体センサの製造方法、及び半導体センサ |
JP3489505B2 (ja) * | 1999-09-22 | 2004-01-19 | トヨタ自動車株式会社 | 半導体センサ |
DE10024266B4 (de) * | 2000-05-17 | 2010-06-17 | Robert Bosch Gmbh | Verfahren zur Herstellung eines mikromechanischen Bauelements |
JP4075470B2 (ja) * | 2002-05-31 | 2008-04-16 | 株式会社豊田中央研究所 | センサ装置 |
JP4254220B2 (ja) * | 2002-11-29 | 2009-04-15 | 株式会社デンソー | 電磁アクチュエータおよび力学量センサ |
US7094622B1 (en) * | 2003-08-27 | 2006-08-22 | Louisiana Tech University Foundation, Inc. | Polymer based tunneling sensor |
KR100599124B1 (ko) * | 2005-02-14 | 2006-07-12 | 삼성전자주식회사 | 부유 구조체 제조방법 |
JP2008008672A (ja) | 2006-06-27 | 2008-01-17 | Matsushita Electric Works Ltd | 加速度センサ |
JP2008264902A (ja) | 2007-04-17 | 2008-11-06 | Toyota Motor Corp | シリコン構造体とシリコン構造体の製造方法 |
-
2010
- 2010-05-27 JP JP2010121888A patent/JP5316479B2/ja not_active Expired - Fee Related
- 2010-06-08 US US12/801,405 patent/US8413507B2/en not_active Expired - Fee Related
-
2013
- 2013-04-08 JP JP2013080452A patent/JP5494861B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011017693A (ja) | 2011-01-27 |
US20100307246A1 (en) | 2010-12-09 |
US8413507B2 (en) | 2013-04-09 |
JP5494861B2 (ja) | 2014-05-21 |
JP2013178255A (ja) | 2013-09-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5316479B2 (ja) | 半導体力学量センサの製造方法及び半導体力学量センサ | |
US6951824B2 (en) | Method for manufacturing a micromechanical component and a component that is manufactured in accordance with the method | |
US9458009B2 (en) | Semiconductor devices and methods of forming thereof | |
US6291875B1 (en) | Microfabricated structures with electrical isolation and interconnections | |
US9908771B2 (en) | Inertial and pressure sensors on single chip | |
US20100162823A1 (en) | Mems sensor and mems sensor manufacture method | |
US9194882B2 (en) | Inertial and pressure sensors on single chip | |
KR100348177B1 (ko) | 단결정 실리콘의 마이크로머시닝 기법에서의 깊은 트렌치절연막을 이용한 절연 방법 | |
US6569702B2 (en) | Triple layer isolation for silicon microstructure and structures formed using the same | |
US5930595A (en) | Isolation process for surface micromachined sensors and actuators | |
JP2009016717A (ja) | 半導体装置およびその製造方法 | |
US6846724B2 (en) | Method for fabricating a microelectromechanical system (MEMS) device using a pre-patterned bridge | |
TW201524889A (zh) | 微機械構件與製造微機械構件的方法 | |
US6469330B1 (en) | Process for manufacturing integrated devices comprising microstructures and associated suspended electrical interconnections | |
JP4081868B2 (ja) | 微小装置の製造方法 | |
KR20140091574A (ko) | 희생 실리콘 슬랩을 이용한 와이드 트렌치 형성 방법 | |
KR20000028948A (ko) | 각속도 센서 제조방법 | |
US20190242709A1 (en) | Sensor | |
CN114620672A (zh) | 微机电系统器件、微机电系统加速度计及其形成方法 | |
JP5167652B2 (ja) | Mems素子 | |
US20040081809A1 (en) | Microstructured component and method for its manufacture | |
JP4783914B2 (ja) | 半導体力学量センサおよび半導体力学量センサの製造方法 | |
JP3725059B2 (ja) | 半導体力学量センサ | |
JP3424550B2 (ja) | 半導体力学量センサの製造方法 | |
CN118265670A (en) | Micromechanical component |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111122 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120529 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120725 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130115 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130408 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130415 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130611 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130624 |
|
R151 | Written notification of patent or utility model registration |
Ref document number: 5316479 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R151 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |