AU5874099A - Formation of suspended beams using soi substrates, and application to the fabrication of a vibratory gyrometer - Google Patents

Formation of suspended beams using soi substrates, and application to the fabrication of a vibratory gyrometer

Info

Publication number
AU5874099A
AU5874099A AU58740/99A AU5874099A AU5874099A AU 5874099 A AU5874099 A AU 5874099A AU 58740/99 A AU58740/99 A AU 58740/99A AU 5874099 A AU5874099 A AU 5874099A AU 5874099 A AU5874099 A AU 5874099A
Authority
AU
Australia
Prior art keywords
wafer
insulating layer
fabrication
formation
application
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU58740/99A
Other languages
English (en)
Inventor
Mark Edward Mcnie
Vishal Nayar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
UK Secretary of State for Defence
Original Assignee
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by UK Secretary of State for Defence filed Critical UK Secretary of State for Defence
Publication of AU5874099A publication Critical patent/AU5874099A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/02—Rotary gyroscopes
    • G01C19/04—Details
    • G01C19/16—Suspensions; Bearings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Physical Vapour Deposition (AREA)
  • Press Drives And Press Lines (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Producing Shaped Articles From Materials (AREA)
AU58740/99A 1998-09-12 1999-09-13 Formation of suspended beams using soi substrates, and application to the fabrication of a vibratory gyrometer Abandoned AU5874099A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9819821.1A GB9819821D0 (en) 1998-09-12 1998-09-12 Improvements relating to micro-machining
GB9819821 1998-09-12
PCT/GB1999/003028 WO2000016041A2 (en) 1998-09-12 1999-09-13 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer

Publications (1)

Publication Number Publication Date
AU5874099A true AU5874099A (en) 2000-04-03

Family

ID=10838709

Family Applications (1)

Application Number Title Priority Date Filing Date
AU58740/99A Abandoned AU5874099A (en) 1998-09-12 1999-09-13 Formation of suspended beams using soi substrates, and application to the fabrication of a vibratory gyrometer

Country Status (11)

Country Link
US (2) US6276205B1 (enExample)
EP (2) EP1116008B1 (enExample)
JP (1) JP4999227B2 (enExample)
KR (1) KR100651769B1 (enExample)
AT (1) ATE367570T1 (enExample)
AU (1) AU5874099A (enExample)
CA (1) CA2343446A1 (enExample)
DE (1) DE69936590T2 (enExample)
GB (1) GB9819821D0 (enExample)
NO (1) NO20011230L (enExample)
WO (1) WO2000016041A2 (enExample)

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Also Published As

Publication number Publication date
US6670212B2 (en) 2003-12-30
EP1116008A2 (en) 2001-07-18
WO2000016041A3 (en) 2000-09-28
ATE367570T1 (de) 2007-08-15
CA2343446A1 (en) 2000-03-23
KR100651769B1 (ko) 2006-11-30
NO20011230D0 (no) 2001-03-09
JP2002525843A (ja) 2002-08-13
JP4999227B2 (ja) 2012-08-15
GB9819821D0 (en) 1998-11-04
WO2000016041A2 (en) 2000-03-23
KR20010075052A (ko) 2001-08-09
EP1808672A2 (en) 2007-07-18
EP1116008B1 (en) 2007-07-18
EP1808672A3 (en) 2009-06-17
DE69936590D1 (de) 2007-08-30
DE69936590T2 (de) 2007-11-22
NO20011230L (no) 2001-05-11
US6276205B1 (en) 2001-08-21
US20020017132A1 (en) 2002-02-14

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