KR100651769B1 - 절연체상 실리콘 기판을 사용하는 현수된 빔의 형성 및 진동형 자이로미터의 제조에의 적용 - Google Patents

절연체상 실리콘 기판을 사용하는 현수된 빔의 형성 및 진동형 자이로미터의 제조에의 적용 Download PDF

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Publication number
KR100651769B1
KR100651769B1 KR1020017003168A KR20017003168A KR100651769B1 KR 100651769 B1 KR100651769 B1 KR 100651769B1 KR 1020017003168 A KR1020017003168 A KR 1020017003168A KR 20017003168 A KR20017003168 A KR 20017003168A KR 100651769 B1 KR100651769 B1 KR 100651769B1
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South Korea
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wafer
insulating layer
micro
ring
gyrometer
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KR20010075052A (ko
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마크에드워드 맥크니
비샬 나야르
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키네티큐 리미티드
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/02—Rotary gyroscopes
    • G01C19/04—Details
    • G01C19/16—Suspensions; Bearings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Physical Vapour Deposition (AREA)
  • Press Drives And Press Lines (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Producing Shaped Articles From Materials (AREA)
KR1020017003168A 1998-09-12 1999-09-13 절연체상 실리콘 기판을 사용하는 현수된 빔의 형성 및 진동형 자이로미터의 제조에의 적용 Expired - Fee Related KR100651769B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9819821.1A GB9819821D0 (en) 1998-09-12 1998-09-12 Improvements relating to micro-machining
GB9819821.1 1998-09-12

Publications (2)

Publication Number Publication Date
KR20010075052A KR20010075052A (ko) 2001-08-09
KR100651769B1 true KR100651769B1 (ko) 2006-11-30

Family

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Application Number Title Priority Date Filing Date
KR1020017003168A Expired - Fee Related KR100651769B1 (ko) 1998-09-12 1999-09-13 절연체상 실리콘 기판을 사용하는 현수된 빔의 형성 및 진동형 자이로미터의 제조에의 적용

Country Status (11)

Country Link
US (2) US6276205B1 (enExample)
EP (2) EP1116008B1 (enExample)
JP (1) JP4999227B2 (enExample)
KR (1) KR100651769B1 (enExample)
AT (1) ATE367570T1 (enExample)
AU (1) AU5874099A (enExample)
CA (1) CA2343446A1 (enExample)
DE (1) DE69936590T2 (enExample)
GB (1) GB9819821D0 (enExample)
NO (1) NO20011230L (enExample)
WO (1) WO2000016041A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200010637A (ko) * 2018-06-26 2020-01-31 한국과학기술원 굴절률 및 스트레인의 주기적 동시변화를 이용한 공진기와 전하구속 구조 일체형 주기성 다리 구조 및 그 제조 방법

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KR20200010637A (ko) * 2018-06-26 2020-01-31 한국과학기술원 굴절률 및 스트레인의 주기적 동시변화를 이용한 공진기와 전하구속 구조 일체형 주기성 다리 구조 및 그 제조 방법
KR102086230B1 (ko) 2018-06-26 2020-03-06 한국과학기술원 굴절률 및 스트레인의 주기적 동시변화를 이용한 공진기와 전하구속 구조 일체형 주기성 다리 구조 및 그 제조 방법

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Publication number Publication date
US6670212B2 (en) 2003-12-30
EP1116008A2 (en) 2001-07-18
WO2000016041A3 (en) 2000-09-28
ATE367570T1 (de) 2007-08-15
AU5874099A (en) 2000-04-03
CA2343446A1 (en) 2000-03-23
NO20011230D0 (no) 2001-03-09
JP2002525843A (ja) 2002-08-13
JP4999227B2 (ja) 2012-08-15
GB9819821D0 (en) 1998-11-04
WO2000016041A2 (en) 2000-03-23
KR20010075052A (ko) 2001-08-09
EP1808672A2 (en) 2007-07-18
EP1116008B1 (en) 2007-07-18
EP1808672A3 (en) 2009-06-17
DE69936590D1 (de) 2007-08-30
DE69936590T2 (de) 2007-11-22
NO20011230L (no) 2001-05-11
US6276205B1 (en) 2001-08-21
US20020017132A1 (en) 2002-02-14

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