JP7129599B2 - センサ - Google Patents
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- JP7129599B2 JP7129599B2 JP2018563226A JP2018563226A JP7129599B2 JP 7129599 B2 JP7129599 B2 JP 7129599B2 JP 2018563226 A JP2018563226 A JP 2018563226A JP 2018563226 A JP2018563226 A JP 2018563226A JP 7129599 B2 JP7129599 B2 JP 7129599B2
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- 239000000758 substrate Substances 0.000 claims description 166
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 239000011521 glass Substances 0.000 claims description 15
- 230000000149 penetrating effect Effects 0.000 claims description 5
- 238000001514 detection method Methods 0.000 description 24
- 238000004519 manufacturing process Methods 0.000 description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 17
- 239000002131 composite material Substances 0.000 description 14
- 238000000034 method Methods 0.000 description 12
- 238000005530 etching Methods 0.000 description 11
- 230000001133 acceleration Effects 0.000 description 9
- 229910008045 Si-Si Inorganic materials 0.000 description 8
- 229910006411 Si—Si Inorganic materials 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 238000006073 displacement reaction Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 238000009623 Bosch process Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000006355 external stress Effects 0.000 description 1
- XEMZLVDIUVCKGL-UHFFFAOYSA-N hydrogen peroxide;sulfuric acid Chemical compound OO.OS(O)(=O)=O XEMZLVDIUVCKGL-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5769—Manufacturing; Mounting; Housings
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0045—Packages or encapsulation for reducing stress inside of the package structure
- B81B7/0051—Packages or encapsulation for reducing stress inside of the package structure between the package lid and the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00325—Processes for packaging MEMS devices for reducing stress inside of the package structure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/00468—Releasing structures
- B81C1/00476—Releasing structures removing a sacrificial layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5719—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using planar vibrating masses driven in a translation vibration along an axis
- G01C19/5733—Structural details or topology
- G01C19/574—Structural details or topology the devices having two sensing masses in anti-phase motion
- G01C19/5747—Structural details or topology the devices having two sensing masses in anti-phase motion each sensing mass being connected to a driving mass, e.g. driving frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0235—Accelerometers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0228—Inertial sensors
- B81B2201/0242—Gyroscopes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/03—Static structures
- B81B2203/0353—Holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/09—Packages
- B81B2207/091—Arrangements for connecting external electrical signals to mechanical structures inside the package
- B81B2207/094—Feed-through, via
- B81B2207/095—Feed-through, via through the lid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0102—Surface micromachining
- B81C2201/0105—Sacrificial layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0111—Bulk micromachining
- B81C2201/0112—Bosch process
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2201/00—Manufacture or treatment of microstructural devices or systems
- B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
- B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
- B81C2201/0128—Processes for removing material
- B81C2201/013—Etching
- B81C2201/0132—Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/01—Packaging MEMS
- B81C2203/0109—Bonding an individual cap on the substrate
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C2203/00—Forming microstructural systems
- B81C2203/03—Bonding two components
- B81C2203/033—Thermal bonding
- B81C2203/036—Fusion bonding
Description
10 可動部
10A~10D 錘部
11A、11B 錘部
20~27 電極
30~33 電極
40~47 電極
50 固定部
60 梁部
61 錘部
70、80、90 センサ素子
201 活性層
202 犠牲層
203 支持層
601 上蓋基板
602 下蓋基板
603 電極
604 ワイヤ
605 貫通電極
Claims (11)
- 固定部と、前記固定部に接続された梁部と、前記固定部に対して可動に前記梁部に接続された錘部とを有するセンサ基板と、
前記センサ基板の上面に接合した上蓋基板と、
を備え、
前記上蓋基板は、シリコンを含み導電性を有する複数の第1の部分と、前記第1の部分に接合してガラスを含み絶縁性を有する第2の部分と、を有し、
前記複数の第1の部分は、前記第2の部分に比べて前記センサ基板に向って突出する複数の突出部をそれぞれ有し、
前記複数の突出部のうちの前記上蓋基板の外縁に最も近い最外突出部の幅は、前記複数の突出部のうちの前記最外突出部の他の突出部の幅よりも大きい、センサ。 - 前記突出部は前記センサ基板の前記上面と直接接合している、請求項1に記載のセンサ。
- 前記突出部は前記センサ基板の前記固定部の上面と直接接合している、請求項1に記載のセンサ。
- 前記センサ基板はSOI基板よりなる、請求項1に記載のセンサ。
- 前記上蓋基板の前記第2の部分は前記錘部と対向する、請求項1に記載のセンサ。
- 支持層と、前記支持層の上面に設けられた犠牲層と、前記犠牲層の上面に設けられた活性層とを有するセンサ基板と、
前記センサ基板の上面に接合する上蓋基板と、
前記センサ基板の下面に接合する下蓋基板と、
を備え、
前記活性層は、前記犠牲層を介して前記支持層に固定された固定部と、前記固定部に接続されて変形可能な梁部と、前記固定部に対して可動なように前記梁部に接続された錘部とを有し、
前記支持層には、前記錘部と前記梁部とのうちの一方に対向する位置に前記支持層の上面と下面とを貫通する貫通孔が設けられており、
前記貫通孔は、前記錘部と前記梁部のうちの前記一方に向かって広がっている、もしくは狭まっている、センサ。 - 支持層と、前記支持層の上面に設けられた犠牲層と、前記犠牲層の上面に設けられた活性層とを有するセンサ基板と、
前記センサ基板の上面に接合する上蓋基板と、
前記センサ基板の下面に接合する下蓋基板と、
を備え、
前記活性層は、前記犠牲層を介して前記支持層に固定された固定部と、前記固定部に接続されて変形可能な梁部と、前記固定部に対して可動なように前記梁部に接続された錘部とを有し、
前記支持層には、前記錘部と前記梁部とのうちの一方に対向する位置に前記支持層の上面と下面とを貫通する貫通孔が設けられており、
前記貫通孔は、局部的に小さい径を有するくびれ部分を有する、センサ。 - 支持層と、前記支持層の上面に設けられた犠牲層と、前記犠牲層の上面に設けられた活性層とを有するセンサ基板と、
前記センサ基板の上面に接合する上蓋基板と、
前記センサ基板の下面に接合する下蓋基板と、
を備え、
前記活性層は、前記犠牲層を介して前記支持層に固定された固定部と、前記固定部に接続されて変形可能な梁部と、前記固定部に対して可動なように前記梁部に接続された錘部とを有し、
前記支持層には、前記錘部と前記梁部とのうちの一方に対向する位置に前記支持層の上面と下面とを貫通する貫通孔が設けられており、
前記貫通孔は上面視において矩形状または円形状を有する、センサ。 - 前記上蓋基板の厚みと前記下蓋基板との厚みは等しい、請求項6から8いずれかに記載のセンサ。
- 前記上蓋基板と前記下蓋基板とは前記センサ基板を気密に封止する、請求項9に記載のセンサ。
- 前記上蓋基板と前記下蓋基板とは前記センサ基板を真空に封止する、請求項10に記載のセンサ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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JP2017005560 | 2017-01-17 | ||
JP2017005563 | 2017-01-17 | ||
JP2017005560 | 2017-01-17 | ||
JP2017005563 | 2017-01-17 | ||
PCT/JP2017/045414 WO2018135211A1 (ja) | 2017-01-17 | 2017-12-19 | センサ |
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JPWO2018135211A1 JPWO2018135211A1 (ja) | 2019-11-14 |
JP7129599B2 true JP7129599B2 (ja) | 2022-09-02 |
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US (1) | US11150092B2 (ja) |
JP (1) | JP7129599B2 (ja) |
WO (1) | WO2018135211A1 (ja) |
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US11680797B2 (en) * | 2019-03-27 | 2023-06-20 | Panasonic Intellectual Property Management Co., Ltd. | Physical quantity sensor |
WO2022168585A1 (ja) * | 2021-02-04 | 2022-08-11 | パナソニックIpマネジメント株式会社 | 静電容量型センサ |
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- 2017-12-19 US US16/340,863 patent/US11150092B2/en active Active
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JP2008060382A (ja) | 2006-08-31 | 2008-03-13 | Matsushita Electric Ind Co Ltd | 電子部品及びその製造方法 |
JP2008134222A (ja) | 2006-10-26 | 2008-06-12 | Seiko Instruments Inc | 力学量センサ及び力学量センサの製造方法、並びに、電子機器 |
JP2014004676A (ja) | 2012-06-01 | 2014-01-16 | Toyota Central R&D Labs Inc | Mems構造体 |
JP2013015529A (ja) | 2012-08-30 | 2013-01-24 | Dainippon Printing Co Ltd | 物理量センサ及びその製造方法 |
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