GB9819821D0 - Improvements relating to micro-machining - Google Patents

Improvements relating to micro-machining

Info

Publication number
GB9819821D0
GB9819821D0 GBGB9819821.1A GB9819821A GB9819821D0 GB 9819821 D0 GB9819821 D0 GB 9819821D0 GB 9819821 A GB9819821 A GB 9819821A GB 9819821 D0 GB9819821 D0 GB 9819821D0
Authority
GB
United Kingdom
Prior art keywords
wafer
insulating layer
micro
silicon
portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
GBGB9819821.1A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SECR DEFENCE
UK Secretary of State for Defence
Original Assignee
SECR DEFENCE
UK Secretary of State for Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SECR DEFENCE, UK Secretary of State for Defence filed Critical SECR DEFENCE
Priority to GBGB9819821.1A priority Critical patent/GB9819821D0/en
Priority to US09/163,554 priority patent/US6276205B1/en
Publication of GB9819821D0 publication Critical patent/GB9819821D0/en
Priority to PCT/GB1999/003028 priority patent/WO2000016041A2/en
Priority to AU58740/99A priority patent/AU5874099A/en
Priority to EP99946323A priority patent/EP1116008B1/en
Priority to DE69936590T priority patent/DE69936590T2/de
Priority to KR1020017003168A priority patent/KR100651769B1/ko
Priority to AT99946323T priority patent/ATE367570T1/de
Priority to EP07004839A priority patent/EP1808672A3/en
Priority to JP2000570531A priority patent/JP4999227B2/ja
Priority to CA002343446A priority patent/CA2343446A1/en
Priority to NO20011230A priority patent/NO20011230L/no
Priority to US09/898,081 priority patent/US6670212B2/en
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/02—Rotary gyroscopes
    • G01C19/04—Details
    • G01C19/16—Suspensions; Bearings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02046—Dry cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Press Drives And Press Lines (AREA)
  • Physical Vapour Deposition (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Producing Shaped Articles From Materials (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
GBGB9819821.1A 1998-09-12 1998-09-12 Improvements relating to micro-machining Ceased GB9819821D0 (en)

Priority Applications (13)

Application Number Priority Date Filing Date Title
GBGB9819821.1A GB9819821D0 (en) 1998-09-12 1998-09-12 Improvements relating to micro-machining
US09/163,554 US6276205B1 (en) 1998-09-12 1998-09-30 Micro-machining
CA002343446A CA2343446A1 (en) 1998-09-12 1999-09-13 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer
KR1020017003168A KR100651769B1 (ko) 1998-09-12 1999-09-13 절연체상 실리콘 기판을 사용하는 현수된 빔의 형성 및 진동형 자이로미터의 제조에의 적용
AU58740/99A AU5874099A (en) 1998-09-12 1999-09-13 Formation of suspended beams using soi substrates, and application to the fabrication of a vibratory gyrometer
EP99946323A EP1116008B1 (en) 1998-09-12 1999-09-13 Vibrating gyrometer and its process of fabrication
DE69936590T DE69936590T2 (de) 1998-09-12 1999-09-13 Vibrationskreisel und sein herstellungsverfahren
PCT/GB1999/003028 WO2000016041A2 (en) 1998-09-12 1999-09-13 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer
AT99946323T ATE367570T1 (de) 1998-09-12 1999-09-13 Vibrationskreisels und sein herstellungsverfahren
EP07004839A EP1808672A3 (en) 1998-09-12 1999-09-13 Improvements relating to Micro-machining
JP2000570531A JP4999227B2 (ja) 1998-09-12 1999-09-13 Ｓｏｉ基板を使用した懸垂梁の形成及びその振動式ジャイロメータの製作への応用
NO20011230A NO20011230L (no) 1998-09-12 2001-03-09 Dannelse av opphengte partier ved bruk av SOI-substrater, og anvendelse derav for fremstilling av et vibrasjonsgyrometer
US09/898,081 US6670212B2 (en) 1998-09-12 2001-07-05 Micro-machining

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GBGB9819821.1A GB9819821D0 (en) 1998-09-12 1998-09-12 Improvements relating to micro-machining

Publications (1)

Publication Number Publication Date
GB9819821D0 true GB9819821D0 (en) 1998-11-04

Family

ID=10838709

Family Applications (1)

Application Number Title Priority Date Filing Date
GBGB9819821.1A Ceased GB9819821D0 (en) 1998-09-12 1998-09-12 Improvements relating to micro-machining

Country Status (11)

Country Link
US (2) US6276205B1 (enExample)
EP (2) EP1116008B1 (enExample)
JP (1) JP4999227B2 (enExample)
KR (1) KR100651769B1 (enExample)
AT (1) ATE367570T1 (enExample)
AU (1) AU5874099A (enExample)
CA (1) CA2343446A1 (enExample)
DE (1) DE69936590T2 (enExample)
GB (1) GB9819821D0 (enExample)
NO (1) NO20011230L (enExample)
WO (1) WO2000016041A2 (enExample)

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Also Published As

Publication number Publication date
US6670212B2 (en) 2003-12-30
EP1116008A2 (en) 2001-07-18
WO2000016041A3 (en) 2000-09-28
ATE367570T1 (de) 2007-08-15
AU5874099A (en) 2000-04-03
CA2343446A1 (en) 2000-03-23
KR100651769B1 (ko) 2006-11-30
NO20011230D0 (no) 2001-03-09
JP2002525843A (ja) 2002-08-13
JP4999227B2 (ja) 2012-08-15
WO2000016041A2 (en) 2000-03-23
KR20010075052A (ko) 2001-08-09
EP1808672A2 (en) 2007-07-18
EP1116008B1 (en) 2007-07-18
EP1808672A3 (en) 2009-06-17
DE69936590D1 (de) 2007-08-30
DE69936590T2 (de) 2007-11-22
NO20011230L (no) 2001-05-11
US6276205B1 (en) 2001-08-21
US20020017132A1 (en) 2002-02-14

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