JP4991144B2 - 試料測定方法、及び荷電粒子線装置 - Google Patents
試料測定方法、及び荷電粒子線装置 Download PDFInfo
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- JP4991144B2 JP4991144B2 JP2005344855A JP2005344855A JP4991144B2 JP 4991144 B2 JP4991144 B2 JP 4991144B2 JP 2005344855 A JP2005344855 A JP 2005344855A JP 2005344855 A JP2005344855 A JP 2005344855A JP 4991144 B2 JP4991144 B2 JP 4991144B2
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- Prior art keywords
- sample
- wafer
- charged particle
- particle beam
- heating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
- H01J37/185—Means for transferring objects between different enclosures of different pressure or atmosphere
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/2001—Maintaining constant desired temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/20—Positioning, supporting, modifying or maintaining the physical state of objects being observed or treated
- H01J2237/204—Means for introducing and/or outputting objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/26—Electron or ion microscopes
- H01J2237/28—Scanning microscopes
- H01J2237/2813—Scanning microscopes characterised by the application
- H01J2237/2817—Pattern inspection
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
Scanning Electron Microscope) などによって、パターン幅等を測定することにより、プロセスの評価を行うことが行われている。具体的には、CD−SEMに代表される走査電子顕微鏡によって、半導体ウェハ等の試料上に形成されたパターンが適正に形成されているか否かを判断するため、試料ステージによって試料を移動させ、所望のパターンに電子ビームが照射されるように、試料を移動させることが行われている。
25は、二次電子変換電極27によって、二次電子51に変換され、その二次電子51は二次荷電粒子検出器52により捕捉され、増幅器16を介して表示装置26の表示画面の輝度信号として使用される。
(S0001)を終えたウェハ7は、試料室12とロードロック室9との間に設けられたゲートバルブ11(V2)が開放(S0002)された後に、ロードロック室に移送される(S0003)。
37内の真空を開放するための窒素リーク装置39、及び加熱ユニット37の窒素リーク時に開放されるリークバルブ40が取り付けられている。
12の加熱に併せて、試料ステージを冷却する機構を備えると良い。このような構成によれば、潤滑剤に加熱の影響を与えることなく、試料室内壁を選択的に加熱し、汚染物質を取り除くことができる。
Claims (6)
- 荷電粒子源と、
当該荷電粒子源から放出される荷電粒子線が照射される試料を配置するための試料ステージと、前記試料を包囲する領域を真空排気する真空室を備えた荷電粒子線装置において、
前記試料を加熱するための加熱装置と、前記試料に対する荷電粒子線の照射後であって、前記試料を包囲する領域が大気に開放されたとき、或いはその後に、前記試料を、当該試料が装填されるウェハカセットに装填する前に加熱するように、前記加熱装置を制御する制御装置を備えたことを特徴とする荷電粒子線装置。 - 請求項1において、
前記制御装置は、前記加熱装置が100℃以上,200℃未満で前記試料を加熱するように制御することを特徴とする荷電粒子線装置。 - 請求項2において、
前記制御装置は、前記試料に付着したフッ化炭素の化合物が除去できる時間、前記試料を加熱するように前記加熱装置を制御することを特徴とする荷電粒子線装置。 - 請求項1において、
前記真空室には、前記真空室内の汚染物質を測定するための測定装置が備えられ、当該測定装置によって、前記汚染物質が検出、或いは所定値以上検出されたときに、前記試料が加熱されることを特徴とする荷電粒子線装置。 - 請求項4において、
前記汚染物質は、フッ素系化合物であることを特徴とする荷電粒子線装置。 - 荷電粒子源と、
当該荷電粒子源から放出される荷電粒子線が照射される試料を配置するための試料ステージと、
前記試料を包囲する領域を真空排気する真空室と、
当該真空室に導入される試料を含む領域の真空排気を行うための試料交換室と、
前記試料に対する荷電粒子線の照射後であって、当該試料交換室が大気に開放されたとき、或いはその後に、前記試料を、当該試料が装填されるウェハカセットに装填する前に加熱する加熱装置を備えたことを特徴とする荷電粒子線装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005344855A JP4991144B2 (ja) | 2005-11-30 | 2005-11-30 | 試料測定方法、及び荷電粒子線装置 |
US11/305,109 US7247864B2 (en) | 2005-11-30 | 2005-12-19 | Charged particle beam apparatus |
US11/802,452 US8071961B2 (en) | 2005-11-30 | 2007-05-23 | Charged particle beam apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005344855A JP4991144B2 (ja) | 2005-11-30 | 2005-11-30 | 試料測定方法、及び荷電粒子線装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007149571A JP2007149571A (ja) | 2007-06-14 |
JP4991144B2 true JP4991144B2 (ja) | 2012-08-01 |
Family
ID=38086551
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005344855A Expired - Fee Related JP4991144B2 (ja) | 2005-11-30 | 2005-11-30 | 試料測定方法、及び荷電粒子線装置 |
Country Status (2)
Country | Link |
---|---|
US (2) | US7247864B2 (ja) |
JP (1) | JP4991144B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4991144B2 (ja) * | 2005-11-30 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | 試料測定方法、及び荷電粒子線装置 |
JP2008166062A (ja) * | 2006-12-27 | 2008-07-17 | Hitachi High-Technologies Corp | 真空容器を持つ装置 |
JP2009146791A (ja) * | 2007-12-17 | 2009-07-02 | Hitachi High-Technologies Corp | 電子ビーム検査装置 |
JP5255974B2 (ja) * | 2008-10-06 | 2013-08-07 | 株式会社日立ハイテクノロジーズ | 真空室内のガス成分測定方法、及び真空装置 |
KR101647901B1 (ko) * | 2011-09-14 | 2016-08-11 | 제이에프이 스틸 가부시키가이샤 | 전자선을 사용한 현미경 혹은 분석 장치용 시료 가열 홀더, 및 그것을 사용한 시료 가열 방법 |
JP6151080B2 (ja) * | 2013-04-26 | 2017-06-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置 |
US10186397B2 (en) | 2013-11-11 | 2019-01-22 | Howard Hughes Medical Institute | Workpiece holder for workpiece transport apparatus |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57202624A (en) * | 1981-06-09 | 1982-12-11 | Mitsubishi Electric Corp | Manufacture of metal vapor discharge lamp |
JPS6059645A (ja) * | 1983-09-09 | 1985-04-06 | Ulvac Corp | 試料の精密微動機構用シ−ル装置 |
JPS6358747A (ja) | 1986-08-29 | 1988-03-14 | Agency Of Ind Science & Technol | 電子顕微鏡 |
JPS63226866A (ja) * | 1987-03-16 | 1988-09-21 | Hitachi Ltd | 真空装置 |
JPH01115041A (ja) * | 1987-10-28 | 1989-05-08 | Hitachi Ltd | 荷電粒子線装置の運動導入機構 |
JP2794776B2 (ja) * | 1989-05-12 | 1998-09-10 | ダイキン工業株式会社 | 含ハロゲン潤滑剤組成物 |
NL8902727A (nl) | 1989-11-06 | 1991-06-03 | Philips Nv | Objecthouder voor ondersteuning van een object in een geladen deeltjesbundelsysteem. |
JPH05135725A (ja) * | 1991-11-07 | 1993-06-01 | Jeol Ltd | 荷電粒子ビーム装置における有機ガス分子の除去方法 |
JP3040226B2 (ja) | 1991-11-13 | 2000-05-15 | 松下電器産業株式会社 | 電池パックの保持装置 |
US5296669A (en) | 1992-05-29 | 1994-03-22 | Hitachi, Ltd. | Specimen heating device for use with an electron microscope |
US5521381A (en) * | 1994-12-12 | 1996-05-28 | The Regents Of The University Of California | Contamination analysis unit |
US6025592A (en) | 1995-08-11 | 2000-02-15 | Philips Electronics North America | High temperature specimen stage and detector for an environmental scanning electron microscope |
JPH0963527A (ja) * | 1995-08-18 | 1997-03-07 | Mitsubishi Electric Corp | コンタミネーション低減装置 |
JP3774953B2 (ja) * | 1995-10-19 | 2006-05-17 | 株式会社日立製作所 | 走査形電子顕微鏡 |
US5898177A (en) | 1996-08-08 | 1999-04-27 | Hitachi, Ltd. | Electron microscope |
US5914493A (en) | 1997-02-21 | 1999-06-22 | Nikon Corporation | Charged-particle-beam exposure apparatus and methods with substrate-temperature control |
JPH1140478A (ja) * | 1997-07-18 | 1999-02-12 | Nikon Corp | 電子線投影露光装置 |
JPH1144643A (ja) * | 1997-07-25 | 1999-02-16 | Toshiba Corp | 被処理基板の評価方法及び清浄化方法 |
JPH11329328A (ja) * | 1998-05-08 | 1999-11-30 | Hitachi Ltd | 電子ビーム検査装置 |
JP2000039410A (ja) * | 1998-07-17 | 2000-02-08 | Pyuarekkusu:Kk | 分析用試料ケース |
JP3467189B2 (ja) * | 1998-07-30 | 2003-11-17 | シャープ株式会社 | 元素分析方法 |
JP2001015057A (ja) * | 1999-06-30 | 2001-01-19 | Jeol Ltd | 荷電粒子線装置および荷電粒子線装置用試料供給方法 |
JP2002139464A (ja) * | 2000-11-02 | 2002-05-17 | Hitachi Ltd | 半導体装置の検査方法および検査装置 |
US7078689B1 (en) * | 2004-10-25 | 2006-07-18 | Kla-Tencor Technologies Corporation | Integrated electron beam and contaminant removal system |
JP4991144B2 (ja) * | 2005-11-30 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | 試料測定方法、及び荷電粒子線装置 |
-
2005
- 2005-11-30 JP JP2005344855A patent/JP4991144B2/ja not_active Expired - Fee Related
- 2005-12-19 US US11/305,109 patent/US7247864B2/en active Active
-
2007
- 2007-05-23 US US11/802,452 patent/US8071961B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US20100258739A1 (en) | 2010-10-14 |
JP2007149571A (ja) | 2007-06-14 |
US20070120068A1 (en) | 2007-05-31 |
US8071961B2 (en) | 2011-12-06 |
US7247864B2 (en) | 2007-07-24 |
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