JP6151080B2 - 荷電粒子ビーム描画装置 - Google Patents
荷電粒子ビーム描画装置 Download PDFInfo
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- JP6151080B2 JP6151080B2 JP2013093686A JP2013093686A JP6151080B2 JP 6151080 B2 JP6151080 B2 JP 6151080B2 JP 2013093686 A JP2013093686 A JP 2013093686A JP 2013093686 A JP2013093686 A JP 2013093686A JP 6151080 B2 JP6151080 B2 JP 6151080B2
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- Prior art keywords
- temperature
- sample
- chamber
- charged particle
- particle beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002039 particle-beam lithography Methods 0.000 title 1
- 239000002245 particle Substances 0.000 claims description 21
- 230000005855 radiation Effects 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000000034 method Methods 0.000 description 10
- 238000010894 electron beam technology Methods 0.000 description 9
- 238000003860 storage Methods 0.000 description 9
- 238000001816 cooling Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000000609 electron-beam lithography Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/3002—Details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67213—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one ion or electron beam chamber
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electron Beam Exposure (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Description
11・・・搬入出部
11a・・・載置部
11b・・・大気搬送ロボット
12・・・ロードドロックチャンバ
13・・・アライメントチャンバ
14・・・マスクカバー収納チャンバ
15・・・真空ロボットチャンバ
15a・・・真空搬送ロボット
16・・・描画チャンバ
16a・・・ステージ
17・・・恒温化チャンバ
19・・・温調用容器
19a・・・上板部
19b・・・下板部
19c・・・側板部
19c−1・・・開口部
20・・・断熱部材
21・・・試料
22・・・温調部
22a・・・ペルチェ素子
22b・・・冷却部
23・・・伝熱部材
24・・・支持体
25・・・温度センサ
26・・・温度調整部
27・・・温調部制御部
Claims (3)
- 試料を外部より導入するために設けられ、大気状態と真空状態とを切り替えることが可能なロードロックチャンバと、
このロードロックチャンバと連通可能であり、前記試料の搬送を行う搬送チャンバと、
前記搬送チャンバと連通可能であり、前記試料を収納し輻射により前記試料の温度を制御する温調用容器と、前記温調用容器の温度を制御するための温調部と、を有する恒温化チャンバと、
前記搬送チャンバと連通可能であり、恒温化された前記試料に対して描画を行う描画チャンバと、
を備え、
前記温調用容器は、前記試料の上面と前記温調用容器の上部内壁からの距離と、前記試料の下面と前記温調用容器の下部内壁からの距離とが、実質的に等しくなるように前記試料を配置するための支持体を備えることを特徴とする荷電粒子ビーム描画装置。 - 前記恒温化チャンバは、外周面上に、断熱部材を有することを特徴とする請求項1に記載の荷電粒子ビーム描画装置。
- 前記温調用容器は、前記支持体上に載置される前記試料の温度を検出する温度センサをさらに備え、
前記温調部は、前記温度センサによって検出された前記試料の温度に基づいて、前記温調用容器の温度を制御することを特徴とする請求項1又は2に記載の荷電粒子ビーム描画装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013093686A JP6151080B2 (ja) | 2013-04-26 | 2013-04-26 | 荷電粒子ビーム描画装置 |
KR1020140045895A KR101585880B1 (ko) | 2013-04-26 | 2014-04-17 | 하전 입자빔 묘화 장치 및 하전 입자빔 묘화 방법 |
TW103114298A TWI582890B (zh) | 2013-04-26 | 2014-04-18 | Charged particle beam rendering device and charged particle beam rendering method |
US14/258,371 US8987683B2 (en) | 2013-04-26 | 2014-04-22 | Charged particle beam drawing apparatus and charged particle beam drawing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013093686A JP6151080B2 (ja) | 2013-04-26 | 2013-04-26 | 荷電粒子ビーム描画装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014216528A JP2014216528A (ja) | 2014-11-17 |
JP6151080B2 true JP6151080B2 (ja) | 2017-06-21 |
Family
ID=51788477
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013093686A Active JP6151080B2 (ja) | 2013-04-26 | 2013-04-26 | 荷電粒子ビーム描画装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8987683B2 (ja) |
JP (1) | JP6151080B2 (ja) |
KR (1) | KR101585880B1 (ja) |
TW (1) | TWI582890B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6151080B2 (ja) * | 2013-04-26 | 2017-06-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置 |
US20230107036A1 (en) * | 2021-10-04 | 2023-04-06 | Nuflare Technology, Inc. | Charged particle beam writing method and charged particle beam writing apparatus |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61239624A (ja) * | 1985-04-16 | 1986-10-24 | Toshiba Mach Co Ltd | ロ−デイング装置およびロ−デイング方法 |
US5244820A (en) * | 1990-03-09 | 1993-09-14 | Tadashi Kamata | Semiconductor integrated circuit device, method for producing the same, and ion implanter for use in the method |
US5914493A (en) * | 1997-02-21 | 1999-06-22 | Nikon Corporation | Charged-particle-beam exposure apparatus and methods with substrate-temperature control |
JPH11135416A (ja) * | 1997-10-31 | 1999-05-21 | Nikon Corp | 被処理体載置テーブルおよびそれを備えた処理装置 |
US6402401B1 (en) * | 1999-10-19 | 2002-06-11 | Tokyo Electron Limited | Substrate processing apparatus and substrate processing method |
JP2001222099A (ja) * | 2000-02-10 | 2001-08-17 | Toshiba Corp | 荷電ビーム描画装置および荷電ビーム描画方法 |
AU2002239386A1 (en) * | 2000-12-12 | 2002-06-24 | Tokyo Electron Limited | Rapid thermal processing lamp and method for manufacturing the same |
JP2004039708A (ja) * | 2002-07-01 | 2004-02-05 | Nikon Corp | 荷電粒子線露光装置 |
JP4065528B2 (ja) * | 2003-03-10 | 2008-03-26 | キヤノン株式会社 | 恒温真空容器及びそれを用いた露光装置 |
JP4005938B2 (ja) * | 2003-03-31 | 2007-11-14 | 株式会社東芝 | 荷電ビーム描画方法 |
KR100854809B1 (ko) * | 2003-11-11 | 2008-08-27 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 방법과, 프로그램을 기록한 기억 매체 |
US7713431B2 (en) * | 2004-06-10 | 2010-05-11 | Tokyo Electron Limited | Plasma processing method |
US7304302B1 (en) * | 2004-08-27 | 2007-12-04 | Kla-Tencor Technologies Corp. | Systems configured to reduce distortion of a resist during a metrology process and systems and methods for reducing alteration of a specimen during analysis |
JP2006100706A (ja) * | 2004-09-30 | 2006-04-13 | Tokyo Seimitsu Co Ltd | 電子線露光装置 |
TW200721244A (en) * | 2005-11-17 | 2007-06-01 | Beam Corp E | Substrate treatment apparatus and substrate treatment method |
JP4991144B2 (ja) * | 2005-11-30 | 2012-08-01 | 株式会社日立ハイテクノロジーズ | 試料測定方法、及び荷電粒子線装置 |
JP2007251078A (ja) * | 2006-03-20 | 2007-09-27 | Nuflare Technology Inc | 気相成長装置 |
US7547897B2 (en) | 2006-05-26 | 2009-06-16 | Cree, Inc. | High-temperature ion implantation apparatus and methods of fabricating semiconductor devices using high-temperature ion implantation |
JP5325681B2 (ja) * | 2009-07-08 | 2013-10-23 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
EP2555221B1 (en) * | 2011-08-03 | 2013-07-24 | Fei Company | Method of studying a sample in an ETEM |
US9236216B2 (en) * | 2012-08-03 | 2016-01-12 | Axcelis Technologies, Inc. | In-vacuum high speed pre-chill and post-heat stations |
JP6151080B2 (ja) * | 2013-04-26 | 2017-06-21 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置 |
-
2013
- 2013-04-26 JP JP2013093686A patent/JP6151080B2/ja active Active
-
2014
- 2014-04-17 KR KR1020140045895A patent/KR101585880B1/ko active IP Right Grant
- 2014-04-18 TW TW103114298A patent/TWI582890B/zh active
- 2014-04-22 US US14/258,371 patent/US8987683B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20140128235A (ko) | 2014-11-05 |
US8987683B2 (en) | 2015-03-24 |
US20140319373A1 (en) | 2014-10-30 |
JP2014216528A (ja) | 2014-11-17 |
TWI582890B (zh) | 2017-05-11 |
KR101585880B1 (ko) | 2016-01-15 |
TW201511171A (zh) | 2015-03-16 |
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