JP4982562B2 - イメージセンサ - Google Patents

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Publication number
JP4982562B2
JP4982562B2 JP2009520819A JP2009520819A JP4982562B2 JP 4982562 B2 JP4982562 B2 JP 4982562B2 JP 2009520819 A JP2009520819 A JP 2009520819A JP 2009520819 A JP2009520819 A JP 2009520819A JP 4982562 B2 JP4982562 B2 JP 4982562B2
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Japan
Prior art keywords
image sensor
voltage
pixels
appendix
substrate
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JP2009520819A
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English (en)
Japanese (ja)
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JP2009544230A5 (enExample
JP2009544230A (ja
Inventor
クリストファー パークス
ジョン ピー マッカーテン
Original Assignee
オムニヴィジョン テクノロジーズ インコーポレイテッド
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Publication of JP2009544230A5 publication Critical patent/JP2009544230A5/ja
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    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/42—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by switching between different modes of operation using different resolutions or aspect ratios, e.g. switching between interlaced and non-interlaced mode
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2009520819A 2006-07-19 2007-07-18 イメージセンサ Active JP4982562B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/488,961 2006-07-19
US11/488,961 US7508432B2 (en) 2006-07-19 2006-07-19 CCD with improved substrate voltage setting circuit
PCT/US2007/016280 WO2008011064A2 (en) 2006-07-19 2007-07-18 Ccd with improved substrate voltage setting circuit

Publications (3)

Publication Number Publication Date
JP2009544230A JP2009544230A (ja) 2009-12-10
JP2009544230A5 JP2009544230A5 (enExample) 2010-09-02
JP4982562B2 true JP4982562B2 (ja) 2012-07-25

Family

ID=38957346

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009520819A Active JP4982562B2 (ja) 2006-07-19 2007-07-18 イメージセンサ

Country Status (4)

Country Link
US (1) US7508432B2 (enExample)
EP (1) EP2041958B1 (enExample)
JP (1) JP4982562B2 (enExample)
WO (1) WO2008011064A2 (enExample)

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US20100149379A1 (en) * 2008-12-16 2010-06-17 Summa Joseph R Image sensor with three-dimensional interconnect and ccd
JP5404112B2 (ja) * 2009-03-12 2014-01-29 キヤノン株式会社 固体撮像素子、その駆動方法及び撮像システム
JP5302073B2 (ja) * 2009-04-01 2013-10-02 浜松ホトニクス株式会社 固体撮像装置
US8736924B2 (en) * 2011-09-28 2014-05-27 Truesense Imaging, Inc. Time-delay-and-integrate image sensors having variable integration times
US9462202B2 (en) 2013-06-06 2016-10-04 Samsung Electronics Co., Ltd. Pixel arrays and imaging devices with reduced blooming, controllers and methods
CN105161045B (zh) * 2015-10-21 2018-06-29 京东方科技集团股份有限公司 栅极集成驱动电路、其修复方法、显示面板及显示装置
RU2699805C1 (ru) * 2018-10-08 2019-09-11 Вячеслав Михайлович Смелков Способ управления чувствительностью телевизионной камеры на матрице ПЗС и воспроизведения её видеосигнала в составе мобильного устройства в условиях сложной освещённости и/или сложной яркости объектов
RU2699813C1 (ru) * 2018-11-13 2019-09-11 Вячеслав Михайлович Смелков Способ управления чувствительностью телевизионной камеры на матрице ПЗС в условиях сложной освещённости и/или сложной яркости объектов, компьютерной регистрации видеосигнала и его воспроизведения

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US7982790B2 (en) * 2006-01-16 2011-07-19 Panasonic Corporation Solid-state imaging apparatus and method for driving the same
US7508432B2 (en) * 2006-07-19 2009-03-24 Eastman Kodak Company CCD with improved substrate voltage setting circuit

Also Published As

Publication number Publication date
WO2008011064A3 (en) 2008-05-08
US7508432B2 (en) 2009-03-24
EP2041958A2 (en) 2009-04-01
EP2041958B1 (en) 2015-10-21
JP2009544230A (ja) 2009-12-10
WO2008011064A2 (en) 2008-01-24
US20080017892A1 (en) 2008-01-24

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