CN105161045B - 栅极集成驱动电路、其修复方法、显示面板及显示装置 - Google Patents

栅极集成驱动电路、其修复方法、显示面板及显示装置 Download PDF

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CN105161045B
CN105161045B CN201510688998.3A CN201510688998A CN105161045B CN 105161045 B CN105161045 B CN 105161045B CN 201510688998 A CN201510688998 A CN 201510688998A CN 105161045 B CN105161045 B CN 105161045B
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thin film
film transistor
shift register
repair
gate integrated
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CN105161045A (zh
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许睿
陈小川
王磊
李静
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BOE Technology Group Co Ltd
Beijing BOE Optoelectronics Technology Co Ltd
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Beijing BOE Optoelectronics Technology Co Ltd
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    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
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    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
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    • G09G3/22Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
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Abstract

本发明公开了一种栅极集成驱动电路、其修复方法、显示面板及显示装置,该栅极集成驱动电路包括:级联设置的多个移位寄存器;每个移位寄存器内部设置有至少一个修复薄膜晶体管;该修复薄膜晶体管用于代替移位寄存器中出现缺陷的薄膜晶体管。当移位寄存器中的薄膜晶体管出现缺陷时,本发明实施例中提供的修复薄膜晶体管可以有效地进行修复,代替出现缺陷的薄膜晶体管进行工作,因此,修复薄膜晶体管可以修复不良,进而提高栅极集成驱动电路的产品良率。

Description

栅极集成驱动电路、其修复方法、显示面板及显示装置
技术领域
本发明涉及显示技术领域,尤指一种栅极集成驱动电路、其修复方法、显示面板及显示装置。
背景技术
目前,显示技术被广泛应用于电视、手机以及公共信息的显示,用于显示画面的显示面板也多种多样,而且可以显示丰富多彩的画面。越来越多的显示面板,例如薄膜晶体管液晶显示面板(Thin Film Transistor-Liquid Crystal Display,简称TFT-LCD),有机发光显示面板(Organic Light Emitting Diode,简称OLED)等,都需要利用栅极集成驱动(Gate Driver on Array,简称GOA)技术,将栅极驱动电路集成在显示面板中的玻璃基板上,形成对显示面板的扫描驱动,从而可以从材料成本和制作工艺两方面降低产品成本。
图1示出了现有的栅极集成驱动电路的排布示意图。由于栅极集成驱动电路中的移位寄存器都是由多个薄膜晶体管(Thin-film Transistor,简称TFT)和电容构成,而且是移位寄存的,实际生产过程中,当某个移位寄存器的一个TFT器件发生损坏时,例如沟道粘连,会带来该行移位寄存器的异常工作,根据GOA移位寄存的原理,发生损坏的该行移位寄存器会无法拉低上一行移位寄存器的输出,同样也无法给下一行移位寄存器充电,导致不良行及以下均不能正常输出,进而会使整个栅极集成驱动电路异常工作,如果沟道粘连发生在像素中,根据显示模式,像素会变成暗点或亮点,导致面板显示异常;另外,一些异物如灰尘颗粒,会导致TFT器件中的沟道区域发生静电击穿,静电击穿同样会导致面板显示异常。
因此,如何可以有效地修复栅极集成驱动电路,是本领域技术人员亟待解决的问题。
发明内容
有鉴于此,本发明实施例提供一种栅极集成驱动电路、其修复方法、显示面板及显示装置,可以修复不良,提高产品良率。
因此,本发明实施例提供了一种栅极集成驱动电路,包括:级联设置的多个移位寄存器;
每个所述移位寄存器内部设置有至少一个修复薄膜晶体管;所述修复薄膜晶体管用于代替所述移位寄存器中出现缺陷的薄膜晶体管。
在一种可能的实现方式中,在本发明实施例提供的上述栅极集成驱动电路中,所述修复薄膜晶体管的栅极、源极和漏极中的一个或多个具有至少一个尖端结构。
在一种可能的实现方式中,在本发明实施例提供的上述栅极集成驱动电路中,所述源极和漏极呈梳状结构,所述源极和/或漏极的尖端结构位于所述梳状结构的梳柄末端。
在一种可能的实现方式中,在本发明实施例提供的上述栅极集成驱动电路中,每个所述移位寄存器内部设置有至少一对修复薄膜晶体管;
所述一对修复薄膜晶体管的栅极的尖端结构的尖端聚为一点;和/或
所述一对修复薄膜晶体管的源极的尖端结构的尖端聚为一点;和/或
所述一对修复薄膜晶体管的漏极的尖端结构的尖端聚为一点。
在一种可能的实现方式中,在本发明实施例提供的上述栅极集成驱动电路中,所述修复薄膜晶体管位于所述移位寄存器的中间位置。
在一种可能的实现方式中,在本发明实施例提供的上述栅极集成驱动电路中,每相邻的两个移位寄存器为一组,共用一条位于所述两个移位寄存器之间的低电平信号线。
本发明实施例还提供了一种本发明实施例提供的上述栅极集成驱动电路的修复方法,包括:
确定一移位寄存器中的薄膜晶体管出现缺陷;
通过激光切断所述出现缺陷的薄膜晶体管在所述移位寄存器中的连接处;
将位于所述移位寄存器内部的修复薄膜晶体管连接至所述移位寄存器中切断的所述连接处,来代替所述出现缺陷的薄膜晶体管进行工作。
在一种可能的实现方式中,本发明实施例提供的上述栅极集成驱动电路的修复方法,还包括:
将与所述出现缺陷的薄膜晶体管的移位寄存器共用一条低电平信号线的另一移位寄存器内部的修复薄膜晶体管连接至所述移位寄存器中切断的所述连接处,来代替所述出现缺陷的薄膜晶体管进行工作。
本发明实施例还提供了一种显示面板,包括本发明实施例提供的上述栅极集成驱动电路。
本发明实施例还提供了一种显示装置,包括本发明实施例提供的上述显示面板。
本发明实施例的有益效果包括:
本发明实施例提供的一种栅极集成驱动电路、其修复方法、显示面板及显示装置,该栅极集成驱动电路包括:级联设置的多个移位寄存器;每个移位寄存器内部设置有至少一个修复薄膜晶体管;该修复薄膜晶体管用于代替移位寄存器中出现缺陷的薄膜晶体管。当移位寄存器中的薄膜晶体管出现缺陷时,本发明实施例中提供的修复薄膜晶体管可以有效地进行修复,代替出现缺陷的薄膜晶体管进行工作,因此,修复薄膜晶体管可以修复不良,进而提高栅极集成驱动电路的产品良率。
附图说明
图1为现有技术中栅极集成驱动电路的排布示意图;
图2为本发明实施例提供的栅极集成驱动电路的排布示意图之一;
图3为本发明实施例提供的修复薄膜晶体管的结构示意图;
图4为本发明实施例提供的一对修复薄膜晶体管的结构示意图;
图5为本发明实施例提供的栅极集成驱动电路的排布示意图之二;
图6a为本发明实施例提供的栅极集成驱动电路的排布示意图之三;
图6b为本发明实施例提供的栅极集成驱动电路的排布示意图之四;
图7a为本发明实施例提供的栅极集成驱动电路的修复方法的流程图之一;
图7b为本发明实施例提供的栅极集成驱动电路的修复方法的流程图之二。
具体实施方式
下面结合附图,对本发明实施例提供的栅极集成驱动电路、其修复方法、显示面板及显示装置的具体实施方式进行详细地说明。
本发明实施例提供了一种栅极集成驱动电路,如图2所示,包括:级联设置的多个移位寄存器1;
每个移位寄存器1内部设置有至少一个修复薄膜晶体管2;该修复薄膜晶体管2用于代替移位寄存器1中出现缺陷的薄膜晶体管。
在本发明实施例提供的上述栅极集成驱动电路,当移位寄存器中的薄膜晶体管出现缺陷时,本发明实施例中提供的在栅极集成驱动电路中设置的修复薄膜晶体管可以有效地进行修复,代替出现缺陷的薄膜晶体管进行工作,因此,修复薄膜晶体管可以修复不良,进而提高栅极集成驱动电路的产品良率。
需要说明的是,附图中移位寄存器都是用方框表示,目的只是示意说明本发明内容;在移位寄存器中的薄膜晶体管均正常工作时,修复薄膜晶体管的栅极、源极和漏极均悬空,不与移位寄存器中的任何器件相连。
在具体实施时,在本发明实施例提供的上述栅极集成驱动电路中,当移位寄存器正常工作时,为了预防发生静电击穿,该修复薄膜晶体管的栅极、源极和漏极中的一个或多个可以具有至少一个尖端结构,图3示出了修复薄膜晶体管2的栅极21和源极22具有一个尖端结构(虚线圆圈标注处),漏极23具有两个尖端结构(虚线圆圈标注处),根据尖端放电的原理,该尖端结构可以使修复薄膜晶体管起到预防静电的作用,即当栅极集成驱动电路产生静电时,静电可以通过尖端结构的设计释放掉,可以有效地预防不良,不会造成静电击穿的问题。需要说明的是,本发明实施例提供的尖端结构的总数量可以根据实际情况而定,不限于本发明附图中涉及的总数量。
进一步地,在具体实施时,在本发明实施例提供的上述栅极集成驱动电路中,该修复薄膜晶体管的源极和漏极可以呈梳状结构,源极和/或漏极的尖端结构可以设置在梳状结构的梳柄末端。如图3所示,该修复薄膜晶体管2的源极22和漏极23均设置为梳状结构,该源极22和漏极23的尖端结构均设置在梳状结构的梳柄末端(虚线圆圈标注处)。需要说明的是,本发明实施例提供的修复薄膜晶体管的具体结构可以是任何适合设置在移位寄存器中的薄膜晶体管的结构,对于修复薄膜晶体管的结构可以根据实际情况而定,不限于本发明附图中涉及的结构。
在具体实施时,在本发明实施例提供的上述栅极集成驱动电路中,为了进一步有效预防静电,防止静电击穿,较佳地,如图4所示,每个移位寄存器1内部可以设置有至少一对修复薄膜晶体管2;一对修复薄膜晶体管的栅极的尖端结构的尖端可以聚为一点;和/或一对修复薄膜晶体管的源极的尖端结构的尖端可以聚为一点;和/或一对修复薄膜晶体管的漏极的尖端结构的尖端可以聚为一点。如图5所示,一对修复薄膜晶体管的栅极21的尖端结构的尖端聚为一点(虚线方框标注处),源极22的尖端结构的尖端聚为一点(虚线方框标注处),以及漏极23的尖端结构的尖端聚为一点(虚线方框标注处),这样可以有效预防静电。
在具体实施时,在本发明实施例提供的上述栅极集成驱动电路中,为了可以兼顾各移位寄存器两侧的不良位置,在每一移位寄存器中,修复薄膜晶体管可以位于移位寄存器的中间位置,也就是说,将移位寄存器中的各器件分成两部分,在这两部分中间设置有修复薄膜晶体管。
在具体实施时,在本发明实施例提供的上述栅极集成驱动电路中,由于在移位寄存器内部添加修复薄膜晶体管占用了一定的空间,如图6a和图6b所示,每相邻的两个移位寄存器1可以设置为一组,共用一条位于两个移位寄存器1之间的低电平信号线(VSS信号线),这样一组移位寄存器共用低电平信号线的设计可以节省一部分空间。其中,图6b示出了相邻两行的移位寄存器中对应的两个修复薄膜管中的漏极可以电性相连,即两个修复薄膜晶体管可以共用一个漏极,这样可以进一步节省一部分空间,并且当移位寄存器中的较大器件受损时,可以利用共用漏极的两个修复薄膜晶体管来进行修复。
在具体实施时,本发明实施例提供的栅极集成驱动电路中一般还会具有诸如薄膜晶体管、电容和其他参考电压信号线等结构,这些具体结构可以有多种实现方式,在此不做限定。
基于同一发明构思,本发明实施例还提供了一种本发明实施例提供的上述栅极集成驱动电路的修复方法,由于该方法解决问题的原理与前述一种栅极集成驱动电路相似,因此该方法的实施可以参见栅极集成驱动电路的实施,重复之处不再赘述。
在具体实施时,本发明实施例提供的栅极集成驱动电路的修复方法,如图7a所示,具体包括以下步骤:
S701、确定一移位寄存器中的薄膜晶体管出现缺陷;
S702、通过激光切断出现缺陷的薄膜晶体管在移位寄存器中的连接处;
S703、将位于移位寄存器内部的修复薄膜晶体管连接至移位寄存器中切断的连接处,来代替出现缺陷的薄膜晶体管进行工作。
在本发明实施例提供的上述栅极集成驱动电路的修复方法中,当移位寄存器中的薄膜晶体管出现缺陷时,通过激光切断出现缺陷的薄膜晶体管在移位寄存器中的连接处,将位于移位寄存器内部的修复薄膜晶体管连接至移位寄存器中切断的连接处,可以有效地进行修复,代替出现缺陷的薄膜晶体管进行工作,因此,修复薄膜晶体管可以修复不良,进而提高栅极集成驱动电路的产品良率。
需要说明的是,在步骤S703中可以通过钨粉沉积的方法将位于移位寄存器内部的修复薄膜晶体管连接至移位寄存器中切断的连接处。
在具体实施时,在本发明实施例提供的上述栅极集成驱动电路的修复方法中,如图7b所示,还可以包括:
S704、将与出现缺陷的薄膜晶体管的移位寄存器共用一条低电平信号线的另一移位寄存器内部的修复薄膜晶体管连接至移位寄存器中切断的连接处,来代替出现缺陷的薄膜晶体管进行工作。
需要说明的是,在步骤S704中可以通过钨粉沉积的方法将与出现缺陷的薄膜晶体管的移位寄存器共用一条低电平信号线的另一移位寄存器内部的修复薄膜晶体管连接至移位寄存器中切断的连接处。步骤S703和步骤S704的顺序可以互换,在此不做限定。步骤S704中适用于当移位寄存器中的较大器件受损时的情况,可以将相邻两行的移位寄存器中对应的两个修复薄膜管中的漏极相连一起,即两个修复薄膜晶体管可以共用一个漏极,然后利用共用漏极的两个修复薄膜晶体管来进行修复,从而保证了大尺寸产品的良率,大大提高了经济效益。
基于同一发明构思,本发明实施例还提供了一种显示面板,包括本发明实施例提供的上述栅极集成驱动电路。该显示面板可以为薄膜晶体管液晶显示面板、有机发光显示面板或其他显示面板。
基于同一发明构思,本发明实施例还提供了一种显示装置,包括本发明实施例提供的上述显示面板,该显示装置可以为:手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。对于该显示装置的其它必不可少的组成部分均为本领域的普通技术人员应该理解具有的,在此不做赘述,也不应作为对本发明的限制。该显示装置的实施可以参见上述栅极集成驱动电路和显示面板的实施例,重复之处不再赘述。
本发明实施例提供的一种栅极集成驱动电路、其修复方法、显示面板及显示装置,该栅极集成驱动电路包括:级联设置的多个移位寄存器;每个移位寄存器内部设置有至少一个修复薄膜晶体管;该修复薄膜晶体管用于代替移位寄存器中出现缺陷的薄膜晶体管。当移位寄存器中的薄膜晶体管出现缺陷时,本发明实施例中提供的修复薄膜晶体管可以有效地进行修复,代替出现缺陷的薄膜晶体管进行工作,因此,修复薄膜晶体管可以修复不良,进而提高栅极集成驱动电路的产品良率。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。

Claims (8)

1.一种栅极集成驱动电路,其特征在于,包括:级联设置的多个移位寄存器;
每个所述移位寄存器内部设置有至少一个修复薄膜晶体管;所述修复薄膜晶体管用于代替所述移位寄存器中出现缺陷的薄膜晶体管;其中,在所述移位寄存器中的薄膜晶体管均正常工作时,所述移位寄存器中的修复薄膜晶体管的栅极、源极和漏极均处于悬空状态;所述修复薄膜晶体管的栅极、源极和漏极中的一个或多个具有至少一个尖端结构;
每个所述移位寄存器内部设置有至少一对修复薄膜晶体管;其中,
所述一对修复薄膜晶体管的栅极的尖端结构的尖端聚为一点;和/或,
所述一对修复薄膜晶体管的源极的尖端结构的尖端聚为一点;和/或,
所述一对修复薄膜晶体管的漏极的尖端结构的尖端聚为一点。
2.如权利要求1所述的栅极集成驱动电路,其特征在于,所述源极和漏极呈梳状结构,所述源极和/或漏极的尖端结构位于所述梳状结构的梳柄末端。
3.如权利要求1或2所述的栅极集成驱动电路,其特征在于,所述修复薄膜晶体管位于所述移位寄存器的中间位置。
4.如权利要求1或2所述的栅极集成驱动电路,其特征在于,每相邻的两个移位寄存器为一组,共用一条位于所述两个移位寄存器之间的低电平信号线。
5.一种如权利要求1-4任一项所述的栅极集成驱动电路的修复方法,其特征在于,包括:
确定一移位寄存器中的薄膜晶体管出现缺陷;
通过激光切断所述出现缺陷的薄膜晶体管在所述移位寄存器中的连接处;
将位于所述移位寄存器内部的修复薄膜晶体管连接至所述移位寄存器中切断的所述连接处,来代替所述出现缺陷的薄膜晶体管进行工作。
6.如权利要求5所述的修复方法,其特征在于,还包括:
将与所述出现缺陷的薄膜晶体管的移位寄存器共用一条低电平信号线的另一移位寄存器内部的修复薄膜晶体管连接至所述移位寄存器中切断的所述连接处,来代替所述出现缺陷的薄膜晶体管进行工作。
7.一种显示面板,其特征在于,包括如权利要求1-4任一项所述的栅极集成驱动电路。
8.一种显示装置,其特征在于,包括如权利要求7所述的显示面板。
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