JP4975639B2 - 交換式の積み重ね可能なトレイを備える固体前駆体供給システム - Google Patents
交換式の積み重ね可能なトレイを備える固体前駆体供給システム Download PDFInfo
- Publication number
- JP4975639B2 JP4975639B2 JP2007543039A JP2007543039A JP4975639B2 JP 4975639 B2 JP4975639 B2 JP 4975639B2 JP 2007543039 A JP2007543039 A JP 2007543039A JP 2007543039 A JP2007543039 A JP 2007543039A JP 4975639 B2 JP4975639 B2 JP 4975639B2
- Authority
- JP
- Japan
- Prior art keywords
- wall
- precursor
- membrane precursor
- tray
- stackable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/998,420 | 2004-11-29 | ||
| US10/998,420 US7638002B2 (en) | 2004-11-29 | 2004-11-29 | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US11/007,962 US7484315B2 (en) | 2004-11-29 | 2004-12-09 | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
| US11/007,962 | 2004-12-09 | ||
| PCT/US2005/035583 WO2006057710A1 (en) | 2004-11-29 | 2005-10-03 | A solid precursor delivery system comprising replaceable stackable trays |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2008522029A JP2008522029A (ja) | 2008-06-26 |
| JP2008522029A5 JP2008522029A5 (enExample) | 2008-11-20 |
| JP4975639B2 true JP4975639B2 (ja) | 2012-07-11 |
Family
ID=36096210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007543039A Expired - Lifetime JP4975639B2 (ja) | 2004-11-29 | 2005-10-03 | 交換式の積み重ね可能なトレイを備える固体前駆体供給システム |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US7484315B2 (enExample) |
| JP (1) | JP4975639B2 (enExample) |
| KR (1) | KR101172931B1 (enExample) |
| WO (1) | WO2006057710A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009526134A (ja) * | 2006-02-10 | 2009-07-16 | 東京エレクトロン株式会社 | 膜前駆体蒸発システムおよびそれを用いる方法 |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6921062B2 (en) | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
| US7708835B2 (en) * | 2004-11-29 | 2010-05-04 | Tokyo Electron Limited | Film precursor tray for use in a film precursor evaporation system and method of using |
| US7638002B2 (en) * | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US7644512B1 (en) * | 2006-01-18 | 2010-01-12 | Akrion, Inc. | Systems and methods for drying a rotating substrate |
| JP4960720B2 (ja) * | 2006-02-10 | 2012-06-27 | 東京エレクトロン株式会社 | 膜前駆体蒸発システムにおいて使用される膜前駆体のトレーおよびその使用方法 |
| US8268078B2 (en) * | 2006-03-16 | 2012-09-18 | Tokyo Electron Limited | Method and apparatus for reducing particle contamination in a deposition system |
| JP4847365B2 (ja) * | 2006-03-22 | 2011-12-28 | キヤノン株式会社 | 蒸着源および蒸着装置 |
| EP1862788A1 (en) * | 2006-06-03 | 2007-12-05 | Applied Materials GmbH & Co. KG | Evaporator for organic material, coating installation, and method for use thereof |
| US7877895B2 (en) * | 2006-06-26 | 2011-02-01 | Tokyo Electron Limited | Substrate processing apparatus |
| US20080241805A1 (en) | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| KR101480971B1 (ko) * | 2006-10-10 | 2015-01-09 | 에이에스엠 아메리카, 인코포레이티드 | 전구체 전달 시스템 |
| US7846256B2 (en) * | 2007-02-23 | 2010-12-07 | Tokyo Electron Limited | Ampule tray for and method of precursor surface area |
| DE102007038278B4 (de) * | 2007-08-08 | 2013-09-12 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Stofftransport und Ereigniskontrolle in Systemen mit piezoelektrisch aktivierter Tröpfchenemission und Kombinationsmöglichkeiten von Trägermatrix und zu dosierendem Stoff |
| JP4731580B2 (ja) | 2008-03-27 | 2011-07-27 | 東京エレクトロン株式会社 | 成膜方法および成膜装置 |
| KR20110004081A (ko) * | 2009-07-07 | 2011-01-13 | 삼성모바일디스플레이주식회사 | 증착 장치용 캐니스터, 이를 이용한 증착 장치 및 증착 방법 |
| JP5244723B2 (ja) * | 2009-07-10 | 2013-07-24 | 株式会社日立ハイテクノロジーズ | 成膜装置 |
| KR101287113B1 (ko) * | 2010-06-30 | 2013-07-17 | 삼성디스플레이 주식회사 | 증착 장치용 캐니스터 및 이를 이용한 증착 장치 |
| US20130105483A1 (en) * | 2011-10-28 | 2013-05-02 | Applied Materials, Inc. | Apparatus for sublimating solid state precursors |
| JP2015519478A (ja) | 2012-05-31 | 2015-07-09 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | バッチ蒸着のための高材料流束によるソース試薬に基づく流体の送出 |
| JP5933372B2 (ja) | 2012-07-02 | 2016-06-08 | 東京エレクトロン株式会社 | 原料容器および原料容器の使用方法 |
| CN103234328B (zh) * | 2013-03-28 | 2015-04-08 | 京东方科技集团股份有限公司 | 一种基板减压干燥方法及装置 |
| KR101742172B1 (ko) | 2013-07-03 | 2017-05-31 | 무라다기카이가부시끼가이샤 | 보관 용기 |
| US9334566B2 (en) * | 2013-11-25 | 2016-05-10 | Lam Research Corporation | Multi-tray ballast vapor draw systems |
| US9863041B2 (en) * | 2014-10-08 | 2018-01-09 | Lam Research Corporation | Internally heated porous filter for defect reduction with liquid or solid precursors |
| US10526697B2 (en) | 2015-03-06 | 2020-01-07 | Entegris, Inc. | High-purity tungsten hexacarbonyl for solid source delivery |
| EP3162914A1 (en) * | 2015-11-02 | 2017-05-03 | IMEC vzw | Apparatus and method for delivering a gaseous precursor to a reaction chamber |
| US10876205B2 (en) | 2016-09-30 | 2020-12-29 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| JP6849368B2 (ja) * | 2016-09-30 | 2021-03-24 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
| US11926894B2 (en) | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| JP6324609B1 (ja) * | 2017-06-21 | 2018-05-16 | 日本エア・リキード株式会社 | 固体材料容器およびその固体材料容器に固体材料が充填されている固体材料製品 |
| US11166441B2 (en) * | 2018-07-13 | 2021-11-09 | Versum Materials Us, Llc | Vapor delivery container with flow distributor |
| JP7376278B2 (ja) | 2018-08-16 | 2023-11-08 | エーエスエム・アイピー・ホールディング・ベー・フェー | 固体原料昇華器 |
| CN110885970B (zh) * | 2018-09-11 | 2024-06-21 | 北京北方华创微电子装备有限公司 | 固体前驱体蒸汽的稳压和纯化装置以及ald沉积设备 |
| JP6887688B2 (ja) * | 2019-02-07 | 2021-06-16 | 株式会社高純度化学研究所 | 蒸発原料用容器、及びその蒸発原料用容器を用いた固体気化供給システム |
| JP6901153B2 (ja) * | 2019-02-07 | 2021-07-14 | 株式会社高純度化学研究所 | 薄膜形成用金属ハロゲン化合物の固体気化供給システム。 |
| WO2020251696A1 (en) | 2019-06-10 | 2020-12-17 | Applied Materials, Inc. | Processing system for forming layers |
| FI129579B (en) * | 2019-06-28 | 2022-05-13 | Beneq Oy | Precursor source arrangement and atomic layer growth equipment |
| JP7240993B2 (ja) * | 2019-08-27 | 2023-03-16 | 東京エレクトロン株式会社 | 原料ガス供給システム及び原料ガス供給方法 |
| US11624113B2 (en) | 2019-09-13 | 2023-04-11 | Asm Ip Holding B.V. | Heating zone separation for reactant evaporation system |
| WO2021060083A1 (ja) * | 2019-09-24 | 2021-04-01 | 東京エレクトロン株式会社 | 原料供給装置及び原料供給方法 |
| US11661653B2 (en) | 2019-12-18 | 2023-05-30 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Vapor delivery systems for solid and liquid materials |
| JP7519829B2 (ja) * | 2020-03-17 | 2024-07-22 | 東京エレクトロン株式会社 | 原料供給システム及び原料供給方法 |
| KR20220152274A (ko) * | 2020-03-17 | 2022-11-15 | 도쿄엘렉트론가부시키가이샤 | 원료 공급 시스템 |
| CN119020757B (zh) * | 2024-10-24 | 2025-01-10 | 内蒙古工业大学 | 固态源等离子体增强化学气相沉积设备及方法 |
| KR102866784B1 (ko) | 2024-10-25 | 2025-10-01 | 주식회사 엠더블유코퍼레이션 | 다공성 촉매가 구비된 고체전구체 기화시스템의 고체 전구체 소스 용기 |
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-
2004
- 2004-12-09 US US11/007,962 patent/US7484315B2/en not_active Expired - Lifetime
-
2005
- 2005-10-03 JP JP2007543039A patent/JP4975639B2/ja not_active Expired - Lifetime
- 2005-10-03 WO PCT/US2005/035583 patent/WO2006057710A1/en not_active Ceased
- 2005-10-03 KR KR1020077014437A patent/KR101172931B1/ko not_active Expired - Lifetime
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009526134A (ja) * | 2006-02-10 | 2009-07-16 | 東京エレクトロン株式会社 | 膜前駆体蒸発システムおよびそれを用いる方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008522029A (ja) | 2008-06-26 |
| WO2006057710A1 (en) | 2006-06-01 |
| US20060112883A1 (en) | 2006-06-01 |
| KR20070095914A (ko) | 2007-10-01 |
| KR101172931B1 (ko) | 2012-08-10 |
| US7484315B2 (en) | 2009-02-03 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
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