JP5933372B2 - 原料容器および原料容器の使用方法 - Google Patents
原料容器および原料容器の使用方法 Download PDFInfo
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- JP5933372B2 JP5933372B2 JP2012148352A JP2012148352A JP5933372B2 JP 5933372 B2 JP5933372 B2 JP 5933372B2 JP 2012148352 A JP2012148352 A JP 2012148352A JP 2012148352 A JP2012148352 A JP 2012148352A JP 5933372 B2 JP5933372 B2 JP 5933372B2
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- 239000002994 raw material Substances 0.000 title claims description 114
- 238000000034 method Methods 0.000 title claims description 42
- 239000002243 precursor Substances 0.000 claims description 78
- 230000008569 process Effects 0.000 claims description 33
- 239000012159 carrier gas Substances 0.000 claims description 31
- 239000012808 vapor phase Substances 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 13
- 239000007787 solid Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 230000007246 mechanism Effects 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 claims description 5
- 230000009467 reduction Effects 0.000 claims description 4
- 230000003028 elevating effect Effects 0.000 claims description 3
- 230000006837 decompression Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 31
- 239000000758 substrate Substances 0.000 description 19
- 230000002093 peripheral effect Effects 0.000 description 13
- 239000007789 gas Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000000859 sublimation Methods 0.000 description 3
- 230000008022 sublimation Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- NQZFAUXPNWSLBI-UHFFFAOYSA-N carbon monoxide;ruthenium Chemical group [Ru].[Ru].[Ru].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] NQZFAUXPNWSLBI-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- ZIZHEHXAMPQGEK-UHFFFAOYSA-N dirhenium decacarbonyl Chemical group [Re].[Re].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] ZIZHEHXAMPQGEK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012705 liquid precursor Substances 0.000 description 1
- 239000012712 low-vapor-pressure precursor Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- -1 specifically Chemical group 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
2 プロセスチャンバ
4 原料容器
24 筐体
30 開口
41 トレイ
45 孔
46 蓋
50 前駆体
W 基板
Claims (9)
- 被処理体に成膜処理を行うプロセスチャンバへ、原料の前駆体を昇華させた気相原料を供給するための前記前駆体を収容する原料容器であって、
前記プロセスチャンバへ連通する開口を有する筐体内に、前記前駆体を収容するトレイ及び蓋が上下に複数段積み重ねられ、
前記各トレイは、キャリアガスを前記トレイ内に取り込む入口およびキャリアガスが前記前駆体の気相原料とともに流れ出て前記開口へ連通する出口を有し、
前記各蓋は、昇降機構により上下方向に移動することが可能であることを特徴とする、原料容器。 - 前記蓋は、前記前駆体の上部を覆い、前記トレイの上方に移動して当該蓋の直上段のトレイの底部に接触することができることを特徴とする、請求項1に記載の原料容器。
- 前記蓋は、前記トレイの下方に移動して前記トレイ内の前駆体の上面に接することができることを特徴とする、請求項1または2に記載の原料容器。
- 前記蓋は、裏面にメッシュ状のかごを備え、前記かご内に前記前駆体が収容されていることを特徴とする、請求項1〜3のいずれかに記載の原料容器。
- 前記蓋は、前記前駆体と同じ材質で形成されていることを特徴とする、請求項1〜4のいずれかに記載の原料容器。
- 前記昇降機構はベローズからなることを特徴とする、請求項1〜5のいずれかに記載の原料容器。
- 前記前駆体は、金属カルボニル膜の固体状の前駆体であることを特徴とする、請求項1〜6のいずれかに記載の原料容器。
- 請求項1〜7のいずれかに記載の原料容器の使用方法であって、
前記蓋が下方へ移動した後、前記筐体内の減圧を開始し、前記筐体内が成膜処理時の圧力まで減圧された後、前記蓋が上方へ移動することを特徴とする、原料容器の使用方法。 - 前記キャリアガスの供給開始とともに減圧を開始することを特徴とする、請求項8に記載の原料容器の使用方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012148352A JP5933372B2 (ja) | 2012-07-02 | 2012-07-02 | 原料容器および原料容器の使用方法 |
KR1020130073251A KR101677973B1 (ko) | 2012-07-02 | 2013-06-25 | 원료 용기 및 원료 용기의 사용 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012148352A JP5933372B2 (ja) | 2012-07-02 | 2012-07-02 | 原料容器および原料容器の使用方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014009392A JP2014009392A (ja) | 2014-01-20 |
JP5933372B2 true JP5933372B2 (ja) | 2016-06-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012148352A Active JP5933372B2 (ja) | 2012-07-02 | 2012-07-02 | 原料容器および原料容器の使用方法 |
Country Status (2)
Country | Link |
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JP (1) | JP5933372B2 (ja) |
KR (1) | KR101677973B1 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9334566B2 (en) * | 2013-11-25 | 2016-05-10 | Lam Research Corporation | Multi-tray ballast vapor draw systems |
KR20170119360A (ko) * | 2016-04-18 | 2017-10-27 | 삼성전자주식회사 | 고체 소스 공급 유닛, 가스 공급 유닛, 그리고 기판 처리 방법 |
JP6895372B2 (ja) * | 2017-12-12 | 2021-06-30 | 東京エレクトロン株式会社 | 原料容器 |
US20220403512A1 (en) * | 2021-06-22 | 2022-12-22 | Applied Materials, Inc. | Bottom Fed Sublimation Bed for High Saturation Efficiency in Semiconductor Applications |
US11584990B2 (en) | 2021-07-02 | 2023-02-21 | Applied Materials, Inc. | Bottom fed sublimation bed for high saturation efficiency in semiconductor applications |
US20230112884A1 (en) * | 2021-10-08 | 2023-04-13 | Entegris, Inc. | Modular tray for solid chemical vaporizing chamber |
CN114811423A (zh) * | 2022-05-18 | 2022-07-29 | 江苏南大光电材料股份有限公司 | 一种固态源气化装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP3909792B2 (ja) * | 1999-08-20 | 2007-04-25 | パイオニア株式会社 | 化学気相成長法における原料供給装置及び原料供給方法 |
KR20070058439A (ko) * | 2004-09-30 | 2007-06-08 | 동경 엘렉트론 주식회사 | 금속 카르보닐 전구체를 이용한 루테늄 및 레늄 금속층의저압 증착 방법 |
US7484315B2 (en) | 2004-11-29 | 2009-02-03 | Tokyo Electron Limited | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
JP2007308789A (ja) * | 2006-04-19 | 2007-11-29 | Tokyo Electron Ltd | 成膜装置及び成膜方法 |
JP5792438B2 (ja) * | 2010-08-12 | 2015-10-14 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法 |
-
2012
- 2012-07-02 JP JP2012148352A patent/JP5933372B2/ja active Active
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2013
- 2013-06-25 KR KR1020130073251A patent/KR101677973B1/ko active IP Right Grant
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Publication number | Publication date |
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KR20140004007A (ko) | 2014-01-10 |
KR101677973B1 (ko) | 2016-11-21 |
JP2014009392A (ja) | 2014-01-20 |
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