JP2021031715A - 基板処理方法及び基板処理装置 - Google Patents
基板処理方法及び基板処理装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 33
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims abstract description 130
- 229910052707 ruthenium Inorganic materials 0.000 claims abstract description 130
- 230000008569 process Effects 0.000 claims description 29
- 238000003672 processing method Methods 0.000 claims description 9
- 238000000151 deposition Methods 0.000 abstract 2
- 239000007789 gas Substances 0.000 description 218
- 239000012159 carrier gas Substances 0.000 description 40
- 230000003028 elevating effect Effects 0.000 description 28
- 238000010926 purge Methods 0.000 description 28
- 239000002994 raw material Substances 0.000 description 25
- 230000007246 mechanism Effects 0.000 description 16
- 238000010790 dilution Methods 0.000 description 9
- 239000012895 dilution Substances 0.000 description 9
- 230000007723 transport mechanism Effects 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000007865 diluting Methods 0.000 description 4
- 239000003085 diluting agent Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000000149 penetrating effect Effects 0.000 description 3
- -1 Cyclopentadieneyl Chemical group 0.000 description 2
- BZORFPDSXLZWJF-UHFFFAOYSA-N N,N-dimethyl-1,4-phenylenediamine Chemical compound CN(C)C1=CC=C(N)C=C1 BZORFPDSXLZWJF-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- SDJHPPZKZZWAKF-UHFFFAOYSA-N DMBD Natural products CC(=C)C(C)=C SDJHPPZKZZWAKF-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000003795 desorption Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/16—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal carbonyl compounds
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/52—Controlling or regulating the coating process
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Abstract
Description
本実施形態に係る成膜装置(基板処理装置)100について、図1を用いて説明する。図1は、本実施形態に係る成膜装置100の断面模式図の一例である。図1に示す成膜装置100は、ウェハ等の基板Wに対して、例えばルテニウム含有ガス等のプロセスガスを供給して、基板Wの表面にルテニウム膜を成膜する装置である。
成膜装置100の動作の一例について、図2を用いて説明する。図2は、本実施形態に係る成膜装置100の動作の一例を示すフローチャートである。なお、開始時において、処理室1c内は、排気部19により真空雰囲気となっている。また、ステージ5は受け渡し位置に移動している。
Ru3(CO)y(ad)+(12−y)CO(ad)←→3Ru(s)+12CO(g) …(3)
圧力:5〜200mTorr
CO流量:50〜300sccm
ステージ−ガス吐出機構間ギャップ:50〜60mm
圧力:5〜200mTorr
CO流量:50〜300sccm
ステージ−ガス吐出機構間ギャップ:50〜60mm
成膜装置100の動作の他の一例について、図9を用いて説明する。図9は、本実施形態に係る成膜装置100の動作の他の一例を示すフローチャートである。なお、開始時において、処理室1c内は、排気部19により真空雰囲気となっている。また、ステージ5は受け渡し位置に移動している。
圧力:5〜200mTorr
CO流量:50〜300sccm
ステージ−ガス吐出機構間ギャップ:50〜60mm
1 処理容器
1c 処理室
3 ガス吐出機構
4 ガス供給部
5 ステージ(載置台)
6 ヒータ
19 排気部
20 制御装置
40 ルテニウム含有ガス供給部
42 原料タンク
42a ヒータ
44 キャリアガス供給源
47 マスフローメータ
50 バイパス配管
60 希釈ガス供給部
62 希釈ガス供給源
41,43,61 配管
45,48,51,52,53,63,65 バルブ
46,64 マスフローコントローラ
W 基板
T1 ルテニウム含有ガス供給時間
T2 COガス供給時間
T3 パージ時間
Claims (6)
- 処理容器内の載置台に基板を載置する工程と、
前記基板にルテニウム膜を成膜する工程と、を有し、
前記ルテニウム膜を成膜する工程は、
前記処理容器内にルテニウム含有ガス及びCOガスを供給する工程と、
前記処理容器内への前記ルテニウム含有ガス及び前記COガスの供給を停止して、前記処理容器内のガスを排気する工程と、を繰り返す、
基板処理方法。 - 前記ルテニウム含有ガス及び前記COガスを供給する工程は、
前記COガスを供給するタイミングに重なるように、前記ルテニウム含有ガスを供給する、
請求項1に記載の基板処理方法。 - 前記ルテニウム含有ガス及び前記COガスを供給する工程は、
前記ルテニウム含有ガスの供給を開始するタイミングよりも先に、前記COガスの供給を開始する、
請求項1または請求項2に記載の基板処理方法。 - 前記ルテニウム含有ガス及び前記COガスを供給する工程は、
前記ルテニウム含有ガスの供給を停止するタイミングよりも後に、前記COガスの供給を停止する、
請求項1乃至請求項3のいずれか1項に記載の基板処理方法。 - 前記ルテニウム膜を成膜する工程は、
前記繰り返す工程の後に、
前記処理容器内に前記ルテニウム含有ガス及び前記COガスを連続的に供給する工程を有する、
請求項1乃至請求項4のいずれか1項に記載の基板処理方法。 - 基板を載置する載置台を有する処理容器と、
前記処理容器内へルテニウム含有ガス及びCOガスを供給するガス供給部と、
前記処理容器内を排気する排気部と、
制御部と、を備え、
前記制御部は、
前記載置台に前記基板を載置する工程と、
前記基板にルテニウム膜を成膜する工程と、を有し、
前記ルテニウム膜を成膜する工程は、
前記処理容器内にルテニウム含有ガス及びCOガスを供給する工程と、
前記処理容器内への前記ルテニウム含有ガス及び前記COガスの供給を停止して、前記処理容器内のガスを排気する工程と、を繰り返す、
基板処理装置。
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JP2019151413A JP7325261B2 (ja) | 2019-08-21 | 2019-08-21 | 基板処理方法及び基板処理装置 |
TW109127292A TWI850438B (zh) | 2019-08-21 | 2020-08-12 | 基板處理方法及基板處理裝置 |
KR1020200101733A KR102454618B1 (ko) | 2019-08-21 | 2020-08-13 | 기판 처리 방법 및 기판 처리 장치 |
US16/996,426 US11993841B2 (en) | 2019-08-21 | 2020-08-18 | Substrate processing method and substrate processing apparatus |
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US20170241014A1 (en) * | 2016-02-19 | 2017-08-24 | Tokyo Electron Limited | Ruthenium metal deposition method for electrical connections |
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US20170241014A1 (en) * | 2016-02-19 | 2017-08-24 | Tokyo Electron Limited | Ruthenium metal deposition method for electrical connections |
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US20210054503A1 (en) | 2021-02-25 |
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