JP5244723B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5244723B2 JP5244723B2 JP2009163894A JP2009163894A JP5244723B2 JP 5244723 B2 JP5244723 B2 JP 5244723B2 JP 2009163894 A JP2009163894 A JP 2009163894A JP 2009163894 A JP2009163894 A JP 2009163894A JP 5244723 B2 JP5244723 B2 JP 5244723B2
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- Prior art keywords
- container
- evaporation source
- forming apparatus
- film forming
- vapor deposition
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- 230000008021 deposition Effects 0.000 title claims description 14
- 238000001704 evaporation Methods 0.000 claims description 92
- 230000008020 evaporation Effects 0.000 claims description 91
- 239000000463 material Substances 0.000 claims description 76
- 238000007740 vapor deposition Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 29
- 238000010438 heat treatment Methods 0.000 claims description 12
- 238000005192 partition Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 22
- 239000010408 film Substances 0.000 description 17
- 238000000151 deposition Methods 0.000 description 12
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 238000001816 cooling Methods 0.000 description 6
- 239000011368 organic material Substances 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000001771 vacuum deposition Methods 0.000 description 4
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical compound [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 3
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- -1 STB Polymers 0.000 description 2
- 239000007983 Tris buffer Substances 0.000 description 2
- 238000010549 co-Evaporation Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 125000005842 heteroatom Chemical group 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- 125000001399 1,2,3-triazolyl group Chemical class N1N=NC(=C1)* 0.000 description 1
- MUNFOTHAFHGRIM-UHFFFAOYSA-N 2,5-dinaphthalen-1-yl-1,3,4-oxadiazole Chemical compound C1=CC=C2C(C3=NN=C(O3)C=3C4=CC=CC=C4C=CC=3)=CC=CC2=C1 MUNFOTHAFHGRIM-UHFFFAOYSA-N 0.000 description 1
- STTGYIUESPWXOW-UHFFFAOYSA-N 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline Chemical compound C=12C=CC3=C(C=4C=CC=CC=4)C=C(C)N=C3C2=NC(C)=CC=1C1=CC=CC=C1 STTGYIUESPWXOW-UHFFFAOYSA-N 0.000 description 1
- MTUBTKOZCCGPSU-UHFFFAOYSA-N 2-n-naphthalen-1-yl-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N(C=1C=CC=CC=1)C=1C2=CC=CC=C2C=CC=1)C1=CC=CC=C1 MTUBTKOZCCGPSU-UHFFFAOYSA-N 0.000 description 1
- XSUNFLLNZQIJJG-UHFFFAOYSA-N 2-n-naphthalen-2-yl-1-n,1-n,2-n-triphenylbenzene-1,2-diamine Chemical compound C1=CC=CC=C1N(C=1C(=CC=CC=1)N(C=1C=CC=CC=1)C=1C=C2C=CC=CC2=CC=1)C1=CC=CC=C1 XSUNFLLNZQIJJG-UHFFFAOYSA-N 0.000 description 1
- ZOKIJILZFXPFTO-UHFFFAOYSA-N 4-methyl-n-[4-[1-[4-(4-methyl-n-(4-methylphenyl)anilino)phenyl]cyclohexyl]phenyl]-n-(4-methylphenyl)aniline Chemical compound C1=CC(C)=CC=C1N(C=1C=CC(=CC=1)C1(CCCCC1)C=1C=CC(=CC=1)N(C=1C=CC(C)=CC=1)C=1C=CC(C)=CC=1)C1=CC=C(C)C=C1 ZOKIJILZFXPFTO-UHFFFAOYSA-N 0.000 description 1
- DIVZFUBWFAOMCW-UHFFFAOYSA-N 4-n-(3-methylphenyl)-1-n,1-n-bis[4-(n-(3-methylphenyl)anilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound CC1=CC=CC(N(C=2C=CC=CC=2)C=2C=CC(=CC=2)N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C=C(C)C=CC=2)=C1 DIVZFUBWFAOMCW-UHFFFAOYSA-N 0.000 description 1
- CRHRWHRNQKPUPO-UHFFFAOYSA-N 4-n-naphthalen-1-yl-1-n,1-n-bis[4-(n-naphthalen-1-ylanilino)phenyl]-4-n-phenylbenzene-1,4-diamine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(N(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 CRHRWHRNQKPUPO-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- XCJYREBRNVKWGJ-UHFFFAOYSA-N copper(II) phthalocyanine Chemical compound [Cu+2].C12=CC=CC=C2C(N=C2[N-]C(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2[N-]1 XCJYREBRNVKWGJ-UHFFFAOYSA-N 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- IBHBKWKFFTZAHE-UHFFFAOYSA-N n-[4-[4-(n-naphthalen-1-ylanilino)phenyl]phenyl]-n-phenylnaphthalen-1-amine Chemical compound C1=CC=CC=C1N(C=1C2=CC=CC=C2C=CC=1)C1=CC=C(C=2C=CC(=CC=2)N(C=2C=CC=CC=2)C=2C3=CC=CC=C3C=CC=2)C=C1 IBHBKWKFFTZAHE-UHFFFAOYSA-N 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 150000004866 oxadiazoles Chemical class 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- VVOPUZNLRVJDJQ-UHFFFAOYSA-N phthalocyanine copper Chemical compound [Cu].C12=CC=CC=C2C(N=C2NC(C3=CC=CC=C32)=N2)=NC1=NC([C]1C=CC=CC1=1)=NC=1N=C1[C]3C=CC=CC3=C2N1 VVOPUZNLRVJDJQ-UHFFFAOYSA-N 0.000 description 1
- 150000003967 siloles Chemical class 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003685 thermal hair damage Effects 0.000 description 1
- 125000006617 triphenylamine group Chemical group 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
Description
m-MTDATA(4,4’,4”-tris(3-methylphenylphenylamino)triphenylamine),
1-TNATA((4,4’,4”-tris(1-naphthylphenylamino)triphenylamine)
2-TNATA((4,4’,4”-tris(2-naphthylphenylamino)triphenylamine) 等が挙げられる。
Claims (8)
- 真空内において被蒸着基板表面に蒸着材料を被覆する成膜装置であって、
真空室と、
前記真空室内において、前記蒸着材料を加熱して当該蒸着材料のガスを発生する手段と、
前記ガス発生手段と共に形成され、前記発生した蒸着材料のガスを、前記被蒸着基板の表面に供給する蒸発源装置を備えており、
前記蒸発源装置は、
内部に空間を形成し、かつ、その外部に発熱手段を取り付けたヒータケースと、
前記ヒータケースの空間内において、垂直方向に積層されて収納される1以上の蒸発源容器を備えており、
前記蒸発源容器は、各々、略矩形形状の中央部に、当該容器内で発生した蒸着材料のガスを導くための横長の貫通孔を有すると共に、
前記ヒータケースは、その上部に形成され、前記横長の貫通孔を介して前記蒸発源容器からの蒸着材料のガスを集めて所定の方向に供給するための案内部を備え、かつ、当該案内部の一部に、当該蒸着材料のガスを所定の方向に供給するための開口部を備えていることを特徴とする成膜装置。 - 前記請求項1に記載した成膜装置において、前記蒸発源装置の前記開口部が、前記ヒータケースの前記案内部を形成する側壁に形成されていることを特徴とする成膜装置。
- 前記請求項2に記載した成膜装置において、前記ヒータケースの空間内で垂直方向に積層されて収納された1以上の蒸発源容器は、水平方向にも複数並べて配置されていることを特徴とする成膜装置。
- 前記請求項1に記載した成膜装置において、前記蒸発源装置の前記蒸発源容器は、
断面略「U」の字状に形成され、かつ、略中央部にガス放出用の垂直方向の貫通孔を形成するように当該貫通孔を取り囲んで形成された、高熱伝導材料からなる容器と、
前記容器の上面開口を覆う、高熱伝導材料からなる蓋体と、そして、
少なくとも前記坩堝及び前記蓋体の一方に形成され、前記容器内で発生した蒸着材料のガスを前記貫通孔に導くための隙間部を備えていることを特徴とする成膜装置。 - 前記請求項4に記載した成膜装置において、前記蒸発源容器を構成する前記容器の上面開口部に前記蓋体が落とし込まれていることを特徴とする成膜装置。
- 前記請求項4に記載した成膜装置において、前記蒸発源容器を構成する前記容器が、積み重ねた下部の容器の蓋体を兼ねていることを特徴とする成膜装置。
- 前記請求項4に記載した成膜装置において、前記蒸発源容器を構成する前記断面略「U」の字状に形成された前記容器により取り囲まれて形成される垂直方向の前記貫通孔は、水平方向に延びて形成されていることを特徴とする成膜装置。
- 前記請求項4に記載した成膜装置において、前記蒸発源容器を構成する前記断面略「U」の字状に形成した容器には、その内部を複数の部屋に分割するための隔壁が設けられていることを特徴とする成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009163894A JP5244723B2 (ja) | 2009-07-10 | 2009-07-10 | 成膜装置 |
KR1020100061602A KR101191569B1 (ko) | 2009-07-10 | 2010-06-29 | 성막 장치 |
TW099121688A TWI431136B (zh) | 2009-07-10 | 2010-07-01 | Film forming apparatus and its evaporation source apparatus, and its evaporation source container |
CN2010102250874A CN101949002B (zh) | 2009-07-10 | 2010-07-05 | 镀膜装置与其蒸发源装置,及其蒸发源容器 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009163894A JP5244723B2 (ja) | 2009-07-10 | 2009-07-10 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011017065A JP2011017065A (ja) | 2011-01-27 |
JP5244723B2 true JP5244723B2 (ja) | 2013-07-24 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009163894A Expired - Fee Related JP5244723B2 (ja) | 2009-07-10 | 2009-07-10 | 成膜装置 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5244723B2 (ja) |
KR (1) | KR101191569B1 (ja) |
CN (1) | CN101949002B (ja) |
TW (1) | TWI431136B (ja) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102024830B1 (ko) * | 2013-05-09 | 2019-09-25 | (주)지오엘리먼트 | 기화기 |
CN103726020B (zh) * | 2013-12-30 | 2016-09-14 | 深圳市华星光电技术有限公司 | 真空蒸镀装置及蒸镀方法 |
JP6584067B2 (ja) * | 2014-05-30 | 2019-10-02 | 日立造船株式会社 | 真空蒸着装置 |
CN104451583B (zh) | 2015-01-05 | 2017-05-10 | 合肥京东方显示光源有限公司 | 磁控溅射真空室进气装置及磁控溅射设备 |
TWI624554B (zh) * | 2015-08-21 | 2018-05-21 | 弗里松股份有限公司 | 蒸發源 |
MY190445A (en) | 2015-08-21 | 2022-04-21 | Flisom Ag | Homogeneous linear evaporation source |
JP6586535B2 (ja) * | 2017-04-26 | 2019-10-02 | 株式会社アルバック | 蒸発源及び成膜装置 |
JP6526880B1 (ja) * | 2018-06-29 | 2019-06-05 | キヤノントッキ株式会社 | 蒸発源及び蒸着装置 |
CN112176290B (zh) * | 2020-10-27 | 2022-12-13 | 南京昀光科技有限公司 | 一种蒸发源系统 |
CN115094383B (zh) * | 2022-07-01 | 2023-06-30 | 江阴纳力新材料科技有限公司 | 一种基于蒸镀的复合正极集流体制备装置及方法 |
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DE19753656C1 (de) * | 1997-12-03 | 1998-12-03 | Fraunhofer Ges Forschung | Einrichtung zur Vakuumbeschichtung von Gleitlagern |
JP4447256B2 (ja) | 2003-06-27 | 2010-04-07 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
JP4455937B2 (ja) * | 2004-06-01 | 2010-04-21 | 東北パイオニア株式会社 | 成膜源、真空成膜装置、有機elパネルの製造方法 |
JP4602054B2 (ja) * | 2004-11-25 | 2010-12-22 | 東京エレクトロン株式会社 | 蒸着装置 |
US7484315B2 (en) * | 2004-11-29 | 2009-02-03 | Tokyo Electron Limited | Replaceable precursor tray for use in a multi-tray solid precursor delivery system |
JP4847365B2 (ja) * | 2006-03-22 | 2011-12-28 | キヤノン株式会社 | 蒸着源および蒸着装置 |
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KR20110005636A (ko) | 2011-01-18 |
CN101949002B (zh) | 2012-10-10 |
TWI431136B (zh) | 2014-03-21 |
TW201102449A (en) | 2011-01-16 |
CN101949002A (zh) | 2011-01-19 |
JP2011017065A (ja) | 2011-01-27 |
KR101191569B1 (ko) | 2012-10-15 |
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