JP4959080B2 - 反射マスク基板のコーティング - Google Patents

反射マスク基板のコーティング Download PDF

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Publication number
JP4959080B2
JP4959080B2 JP2001501941A JP2001501941A JP4959080B2 JP 4959080 B2 JP4959080 B2 JP 4959080B2 JP 2001501941 A JP2001501941 A JP 2001501941A JP 2001501941 A JP2001501941 A JP 2001501941A JP 4959080 B2 JP4959080 B2 JP 4959080B2
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JP
Japan
Prior art keywords
layer
substrate
silicon
surface side
mask substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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JP2001501941A
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English (en)
Japanese (ja)
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JP2003501823A5 (https=
JP2003501823A (ja
Inventor
ウイリアム、マン‐ワイ、トン
ジョン、テイラー
スコット、ディー．ヘクター
パウイター、ジェイ．エス．マンガット
アラン、アール．スティバーズ
パトリック、ジー．コフロン
マシュー、エイ．トンプソン
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Extreme Ultraviolet LLC
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Extreme Ultraviolet LLC
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Application filed by Extreme Ultraviolet LLC filed Critical Extreme Ultraviolet LLC
Publication of JP2003501823A publication Critical patent/JP2003501823A/ja
Publication of JP2003501823A5 publication Critical patent/JP2003501823A5/ja
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G03F1/24—Reflection masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H10P76/408—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes
    • H10P76/4085—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials characterised by their sizes, orientations, dispositions, behaviours or shapes characterised by the processes involved to create the masks
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—HANDLING OF PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K2201/00—Arrangements for handling radiation or particles
    • G21K2201/06—Arrangements for handling radiation or particles using diffractive, refractive or reflecting elements
    • G21K2201/067—Construction details

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2001501941A 1999-06-07 2000-06-06 反射マスク基板のコーティング Expired - Lifetime JP4959080B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US13815899P 1999-06-07 1999-06-07
US60/138,158 1999-06-07
PCT/US2000/015578 WO2000075727A2 (en) 1999-06-07 2000-06-06 Coatings on reflective mask substrates

Publications (3)

Publication Number Publication Date
JP2003501823A JP2003501823A (ja) 2003-01-14
JP2003501823A5 JP2003501823A5 (https=) 2007-06-07
JP4959080B2 true JP4959080B2 (ja) 2012-06-20

Family

ID=22480708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001501941A Expired - Lifetime JP4959080B2 (ja) 1999-06-07 2000-06-06 反射マスク基板のコーティング

Country Status (6)

Country Link
US (1) US6352803B1 (https=)
EP (1) EP1190276A2 (https=)
JP (1) JP4959080B2 (https=)
KR (1) KR100805360B1 (https=)
AU (1) AU5597000A (https=)
WO (1) WO2000075727A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200011859A (ko) * 2018-07-25 2020-02-04 주식회사 야스 유리 마스크

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US6319635B1 (en) * 1999-12-06 2001-11-20 The Regents Of The University Of California Mitigation of substrate defects in reticles using multilayer buffer layers
US6368942B1 (en) * 2000-03-31 2002-04-09 Euv Llc Method for fabricating an ultra-low expansion mask blank having a crystalline silicon layer
US6524881B1 (en) * 2000-08-25 2003-02-25 Micron Technology, Inc. Method and apparatus for marking a bare semiconductor die
US6821682B1 (en) * 2000-09-26 2004-11-23 The Euv Llc Repair of localized defects in multilayer-coated reticle blanks for extreme ultraviolet lithography
US6737201B2 (en) * 2000-11-22 2004-05-18 Hoya Corporation Substrate with multilayer film, reflection type mask blank for exposure, reflection type mask for exposure and production method thereof as well as production method of semiconductor device
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DE10206143B4 (de) * 2001-02-14 2006-11-16 Hoya Corp. Reflektierender Maskenrohling und reflektierende Maske für EUV-Belichtung und Verfahren zum Herstellen der Maske
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JP4232018B2 (ja) * 2003-07-25 2009-03-04 信越化学工業株式会社 フォトマスクブランク用基板の選定方法
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US20050238922A1 (en) * 2003-12-25 2005-10-27 Hoya Corporation Substrate with a multilayer reflection film, reflection type mask blank for exposure, reflection type mask for exposure and methods of manufacturing them
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KR102146162B1 (ko) * 2018-07-25 2020-08-19 주식회사 야스 유리 마스크

Also Published As

Publication number Publication date
EP1190276A2 (en) 2002-03-27
WO2000075727A3 (en) 2001-05-17
KR20020010912A (ko) 2002-02-06
WO2000075727A2 (en) 2000-12-14
AU5597000A (en) 2000-12-28
US6352803B1 (en) 2002-03-05
KR100805360B1 (ko) 2008-02-20
JP2003501823A (ja) 2003-01-14

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